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25. Ultrahigh Electrostrictive Effect in Lead-Free Sodium Bismuth Titanate-Based Relaxor Ferroelectric Thick Film.

Author

Li, Yizhuo, Zhao, Jinyan, Wang, Zhe, Zheng, Kun, Zhang, Jie, Chen, Chuying, Wang, Lingyan, Wang, Genshui, Li, Xin, Zhao, Yulong, Niu, Gang, and Ren, Wei

Subjects
MICROELECTROMECHANICAL systems, THICK films, BISMUTH titanate, ELECTRONIC equipment, SUBSTRATES (Materials science), ALKALINE earth metals, BISMUTH, ELECTROMECHANICAL effects
Abstract

In recent years, the development of environmentally friendly, lead-free ferroelectric films with prominent electrostrictive effects have been a key area of focus due to their potential applications in micro-actuators, sensors, and transducers for advanced microelectromechanical systems (MEMS). This work investigated the enhanced electrostrictive effect in lead-free sodium bismuth titanate-based relaxor ferroelectric films. The films, composed of (Bi0.5Na0.5)0.8−xBaxSr0.2TiO3 (BNBST, x = 0.02, 0.06, and 0.11), with thickness around 1 μm, were prepared using a sol-gel method on Pt/TiO2/SiO2/Si substrates. By varying the Ba2+ content, the crystal structure, morphology, and electrical properties, including dielectric, ferroelectric, strain, and electromechanical performance, were investigated. The films exhibited a single pseudocubic structure without preferred orientation. A remarkable strain response (S > 0.24%) was obtained in the films (x = 0.02, 0.06) with the coexistence of nonergodic and ergodic relaxor phases. Further, in the x = 0.11 thick films with an ergodic relaxor state, an ultrahigh electrostrictive coefficient Q of 0.32 m4/C2 was achieved. These findings highlight the potential of BNBST films as high-performance, environmentally friendly electrostrictive films for advanced microelectromechanical systems (MEMS) and electronic devices. [ABSTRACT FROM AUTHOR]

Published
2024
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26. Enhanced ferroelectric properties in BiAlO3 modified lead‐free Mn‐doped Bi0.5(Na0.8K0.2)0.5TiO3 thin films.

Author

Peng, Jinghui, Nie, Hengchang, Yuan, Yuou, Yong, Xiao, He, Biao, Wang, Genshui, Du, Fanglin, Shi, Liang, Qu, Xiaofei, and Zhang, Shuai

Abstract

Mn‐doped (1‐x)Bi0.5(Na0.8K0.2)0.5TiO3‐xBiAlO3 (Mn:BNKT‐xBA) thin films were synthesized on lanthanum nickelate‐coated silicon substrates by sol‐gel method. The second phase issue of the film can be effectively addressed by optimizing the substrate, and the maximum polarization and breakdown strength can be increased by introducing the proper amount of Al3+, which is advantageous for the film for energy storage. The results have shown that the Mn:BNKT‐0.03BA film exhibits superior ferroelectric properties (with remanent polarization (Pr) of 23.72 µC/cm2, maximum polarization (Pmax) of 75.37 µC/cm2), which could be an excellent candidate for ferroelectric thin film capacitors. [ABSTRACT FROM AUTHOR]

Published
2024
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31. Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation.

Author

Yu, Ziyi, Fan, Ningbo, Fu, Zhengqian, He, Biao, Yan, Shiguang, Cai, Henghui, Chen, Xuefeng, Zhang, Linlin, Zhang, Yuanyuan, Xu, Bin, Wang, Genshui, and Xu, Fangfang

Subjects
PHASE separation, ANTIFERROELECTRIC materials, THIN films, LOW temperatures, ENERGY storage
Abstract

PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase. There is a desire to know how the threefold ferrielectric coexists with the antiferroelectric phase. Here, the authors realize a threefold-modulated ferrielectric phase regulated by strain-mediated phase separation in PbZrO3 thin film. [ABSTRACT FROM AUTHOR]

Published
2024
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37. High pressure phase boundaries of AgNbO3

Author

Dai, Kai, primary, Cui, Anyang, additional, Li, Yafang, additional, Liu, Zhen, additional, Yan, Yuting, additional, Jiang, Kai, additional, Zhang, Jinzhong, additional, Shang, Liyan, additional, Zhu, Liangqing, additional, Li, Yawei, additional, Wang, Genshui, additional, and Hu, Zhigao, additional

Published
2023
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