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We demonstrate compact highly efficient broadband strip-to-slot mode converters in silicon with record-low losses of 0.02 (±0.02) dB and negligible reflections between 1480 nm and 1580 nm. The new strip-to-slot transition is logarithmically tapered, which enables a compact design. The new logarithmic tapers are compared with more conventional linearly tapered converters.

We report on high-speed multilevel signal generation and arbitrary pulse shaping with silicon-organic hybrid (SOH) Mach-Zehnder interferometer (MZI) modulators. Pure phase modulation exploiting the linear electrooptic effect allows the generation of multiple modulations formats at highest speed such as 40-Gbit/s on-off-keying (OOK) and binary-phase-shift keying (BPSK) and 28-Gbd 4-ASK and 8-ASK with data rates up to 84 Gbit/s. Additionally, beside NRZ pulse shaping, for the first time, Nyquist pulse shaping with silicon modulators is demonstrated to enable multiplexing at highest spectral efficiency.

This article is a transcription of an electronic symposium held on February 5, 2001 by the Brazilian Society of Neuroscience and Behavior (SBNeC) during which eight specialists involved in clinical and experimental research on sleep and dreaming exposed their personal experience and theoretical points of view concerning these highly polemic subjects. Unlike most other bodily functions, sleep and dreaming cannot, so far, be defined in terms of definitive functions that play an ascribable role in maintaining the organism as a whole. Such difficulties appear quite clearly all along the discussions. In this symposium, concepts on sleep function range from a protective behavior to an essential function for maturation of the nervous system. Kleitman's hypothesis [Journal of Nervous and Mental Disease (1974), 159: 293-294] was discussed, according to which the basal state is not the wakeful state but sleep, from which we awake to eat, to protect ourselves, to procreate, etc. Dreams, on the other hand, were widely discussed, being considered either as an important step in consolidation of learning or simply the conscious identification of functional patterns derived from the configuration of released or revoked memorized information.

100 Gb/s NRZ-OOK transmission over 14 km standard single mode fiber in the C-band is demonstrated with a simple intensity modulation and direct detection scheme. The transmission concept utilizes single sideband modulation and comprises a single differential digital-to-analog converter with adjustable phase offset, a new dual electrode plasmonic Mach-Zehnder modulator, a laser at 1537.5 nm, standard single mode fibers, a photodiode, an analog-to-digital converter, and linear offline digital signal processing. The presented SSB concept requires no DSP and complex signaling at the transmitter. The demonstrated SSB transmitter increased the possible transmission distance by a factor of 4.6 compared to a DSB transmitter. We also investigated the equalization requirements. A T/2-spaced feedforward equalizer requires 27 taps to achieve transmission over 10 km with a BER below the HD-FEC limit. In comparison to a DSB transmitter, the SSB transmitter reduced the receiver DSP complexity by a factor of 13.7.

Terahertz sources and detectors have enabled numerous new applications from medical to communications. Yet, most efficient terahertz detection schemes rely on complex free-space optics and typically require high-power lasers as local oscillators. Here, we demonstrate a fiber-coupled, monolithic plasmonic terahertz field detector on a silicon-photonics platform featuring a detection bandwidth of 2.5 THz with a 65 dB dynamical range. The terahertz wave is measured through its nonlinear mixing with an optical probe pulse with an average power of only 63 nW. The high efficiency of the scheme relies on the extreme confinement of the terahertz field to a small volume of 10 -8 (λ THz /2) 3 . Additionally, on-chip guided plasmonic probe beams sample the terahertz signal efficiently in this volume. The approach results in an extremely short interaction length of only 5 μm, which eliminates the need for phase matching and shows the highest conversion efficiency per unit length up to date.

A new plasmonic Mach-Zehnder modulator is demonstrated at a bit rate of 120 Gb/s NRZ-OOK with low peak-to-peak driving voltages of 178 mV pp below the HD-FEC limit. Such record low driving voltage requirements potentially translate into an electrical drive power consumption of 862 aJ/bit. The low drive voltages have been made possible by a new differential Mach-Zehnder modulator electrode design. The differential electrode design is optimized for the balanced driving circuitry and reduces the effectively required driving voltage by a factor of four (V π /4). The potential of the transmitter scheme is further demonstrated by a transmission experiment over 500 m of single mode fiber at the C-band with a BER performance below the KP4 FEC limit.

Coherent optical communications provides the largest data transmission capacity with the highest spectral efficiency and therefore has a remarkable potential to satisfy today's ever-growing bandwidth demands. It relies on so-called in-phase/quadrature (IQ) electro-optic modulators that encode information on both the amplitude and the phase of light. Ideally, such IQ modulators should offer energy-efficient operation and a most compact footprint, which would allow high-density integration and high spatial parallelism. Here, we present compact IQ modulators with an active section occupying a footprint of 4 × 25 µm × 3 µm, fabricated on the silicon platform and operated with sub-1-V driving electronics. The devices exhibit low electrical energy consumptions of only 0.07 fJ bit -1 at 50 Gbit s -1 , 0.3 fJ bit -1 at 200 Gbit s -1 , and 2 fJ bit -1 at 400 Gbit s -1 . Such IQ modulators may pave the way for application of IQ modulators in long-haul and short-haul communications alike.

Deep-UV (DUV) laser patterning has been widely used in recent years for micro- and nanopatterning, taking advantage of the specific properties of irradiation with high-energy photons. In this paper, we show the usefulness of DUV laser patterning for preparing surfaces with controlled chemical properties at the micro- and nanoscale. Our motivation was to develop a simple and versatile method for chemical patterning at multiscales (from mm to nm) over relatively wide areas (mm 2 to cm 2 ). The chemical properties were provided by self-assembled monolayers (SAMs), prepared on glass or silicon wafers. We first investigated their modification under our irradiation conditions (ArF laser) using AFM, XPS and contact angle measurements. Photopatterning was then demonstrated with minimum feature sizes as small as 75 nm, and we showed the possibility to regraft a second SAM on the irradiated regions. Finally, we used these chemically patterned surfaces for directed self-assembly of several types of objects, such as block copolymers, sol-gel materials and liquids by vapor condensation.

For nearly two decades, researchers in the field of plasmonics 1 -which studies the coupling of electromagnetic waves to the motion of free electrons near the surface of a metal 2 -have sought to realize subwavelength optical devices for information technology 3-6 , sensing 7,8 , nonlinear optics 9,10 , optical nanotweezers 11 and biomedical applications 12 . However, the electron motion generates heat through ohmic losses. Although this heat is desirable for some applications such as photo-thermal therapy, it is a disadvantage in plasmonic devices for sensing and information technology 13 and has led to a widespread view that plasmonics is too lossy to be practical. Here we demonstrate that the ohmic losses can be bypassed by using 'resonant switching'. In the proposed approach, light is coupled to the lossy surface plasmon polaritons only in the device's off state (in resonance) in which attenuation is desired, to ensure large extinction ratios between the on and off states and allow subpicosecond switching. In the on state (out of resonance), destructive interference prevents the light from coupling to the lossy plasmonic section of a device. To validate the approach, we fabricated a plasmonic electro-optic ring modulator. The experiments confirm that low on-chip optical losses, operation at over 100 gigahertz, good energy efficiency, low thermal drift and a compact footprint can be combined in a single device. Our result illustrates that plasmonics has the potential to enable fast, compact on-chip sensing and communications technologies.

The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore-surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product U π L and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 Vµm and 50 Vµm for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm.

We demonstrate a plasmonic Mach-Zehnder (MZ) modulator with a flat frequency response exceeding 170 GHz. The modulator comprises two phase modulators exploiting the Pockels effect of an organic electro-optic material in plasmonic slot waveguides. We further show modulation at 100 GBd NRZ and 60 GBd PAM-4. The electrical drive signals were generated using a 100 GSa/s digital to analog converter (DAC). The high-speed and small-scale devices are relevant for next-generation optical interconnects.

In this paper, we demonstrate an integrated microwave phoneeded for beamtonics phased array antenna feeder at 60 GHz with a record-low footprint. Our design is based on ultra-compact plasmonic phase modulators (active area <2.5µm 2 ) that not only provide small size but also ultra-fast tuning speed. In our design, the integrated circuit footprint is in fact only limited by the contact pads of the electrodes and by the optical feeding waveguides. Using the high speed of the plasmonic modulators, we demonstrate beam steering with less than 1 ns reconfiguration time, i.e. the beam direction is reconfigured in-between 1 GBd transmitted symbols.

We demonstrate for the first time a waveguide-based frequency shifter on the silicon photonic platform using single-sideband modulation. The device is based on silicon-organic hybrid (SOH) electro-optic modulators, which combine conventional silicon-on-insulator waveguides with highly efficient electro-optic cladding materials. Using small-signal modulation, we demonstrate frequency shifts of up to 10 GHz. We further show large-signal modulation with optimized waveforms, enabling a conversion efficiency of -5.8 dB while suppressing spurious side-modes by more than 23 dB. In contrast to conventional acousto-optic frequency shifters, our devices lend themselves to large-scale integration on silicon substrates, while enabling frequency shifts that are several orders of magnitude larger than those demonstrated with all-silicon serrodyne devices.

Plasmonic modulators might pave the way for a new generation of compact low-power high-speed optoelectronic devices. We introduce an extremely compact transmitter based on plasmonic Mach-Zehnder modulators offering a capacity of 4 × 36 Gbit/s on a footprint that is only limited by the size of the high-speed contact pads. The transmitter array is contacted through a multicore fiber with a channel spacing of 50 μm.

We report on high-speed plasmonic-organic hybrid Mach-Zehnder modulators comprising ultra-compact phase shifters with lengths as small as 19 µm. Choosing an optimum phase shifter length of 29 µm, we demonstrate 40 Gbit/s on-off keying (OOK) modulation with direct detection and a BER < 6 × 10(-4). Furthermore, we report on a 29 µm long binary-phase shift keying (BPSK) modulator and show that it operates error-free (BER < 1 × 10(-10)) at data rates up to 40 Gbit/s and with an energy consumption of 70 fJ/bit.