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This work is dedicated to the study of electronic-beam (e-beam) evaporated titanium oxide (TiOx) contact for polycrystalline silicon hetero-junction solar cells. A TiOx material obtained by e-beam evaporation method is suggested as a possible alternative to the atomic layer deposition (ALD) process. The purpose is to achieve corresponding passivation efficiency between e-beam evaporation of TiOx and the ALD method. However, the TiOx in question achieved a relatively low passivation performance of Seff = 113 cm-1 in comparison to the reported ALD results. Nonetheless, as e-beam evaporation is well-established and an environmentally friendly deposition technology, e-beam evaporated TiOx passivation layer has potential for improvement. What is clearly demonstrated in our work is how such an improvement in contact resistance dropped from >55 Ω/cm2 to 2.29 Ω/cm2. Indeed, our study established a correlation between the main process parameters of e-beam evaporation and their influence on the quality of electron selective TiOx layer. Moreover, we reveal a possible scenario for the implementation of e-beam evaporated Titanium oxide as electron selective contact for asymmetrical hetero-junction solar cells.

Date of Conference: 19-21 April 2016 The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.