1. Modeling of dislocation dynamics in germanium Czochralski growth
- Author
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A.F. Shimansky, Andrey Smirnov, E. D. Kravtsova, O. I. Podkopaev, Vladimir Artemyev, V. V. Kalaev, A. P. Sid’ko, and V. M. Mamedov
- Subjects
Materials science ,chemistry.chemical_element ,Germanium ,Crystal growth ,02 engineering and technology ,01 natural sciences ,law.invention ,Inorganic Chemistry ,Crystal ,Condensed Matter::Materials Science ,law ,Condensed Matter::Superconductivity ,0103 physical sciences ,Materials Chemistry ,Crystallization ,010302 applied physics ,Dislocation creep ,Condensed matter physics ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Crystallography ,chemistry ,Heat transfer ,Relaxation (physics) ,Dislocation ,0210 nano-technology - Abstract
Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.
- Published
- 2017
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