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Thin films of CrSi2 of various thicknesses, deposited on the Si(111) surface using magnetron sputtering, have been examined through a combination of electron spectroscopy and microscopy techniques. In this article, the mechanism of film formation by sputtering in very short times by the method of magnetron sputtering was studied. In addition, the electrophysical and thermoelectric properties of the formed film were studied for the first time in the article. For the first time, the composition, surface morphology, and cross-section of the thin films, as well as the temperature dependences of the resistivity, Seebeck coefficient, and power factor have been investigated. In the article, a SiO2 substrate on the Si(111) surface was used to form a CrSi2 film. This substrate was chosen due to its temperature resistance and good dielectric properties. The following articles provide information on weekubstrates for growing structures, their formation, and thermoelectric properties (Noroozi et al. in ECS J Solid State Sci, 6:Q114, 2017; Muhammad et al. in Chem Papers, 77:6533–6542, 2023; Alhadhrami et al. in J Taibah Univ Sci, 17:2236368, 2023). It is proven that an amorphous CrSi2 film entirely covers the SiO2/Si(111) surface, starting at a thickness of ~ 400 Å (deposition time ~ 60 s). A homogeneous polycrystalline CrSi2/SiO2/Si(111) film is created after heating the CrSi2/SiO2/Si(111) system to a temperature of approximately 750 K. It is demonstrated that for a CrSi2/SiO2/Si(111) film with varying thicknesses (80 and 180 nm), the resistivity ρ, the power factor P, and the Seebeck coefficient S change nonlinearly with increasing temperature. For CrSi2 films with varying thicknesses, their values are marginally different from one another. In particular, it was found that with increasing T, the resistivity ρ of the polycrystalline film decreases, while the Seebeck coefficient S increases. It is demonstrated that the excitation of electrons from hybridized 3p levels of Si and 4 s and 3d levels of Cr results in three peaks in the photoelectron spectrum. [ABSTRACT FROM AUTHOR]

4-probe measurements of surface resistivity, measurements of dark and light current-voltage characteristics, the possibilities of using a thin PdSi film to obtain perfect nano-sized ohmic contacts on the Si(111) surface have been investigated using Auger electron spectroscopy methods in combination with ion etching of the surface. It has been shown that the depth of Ni diffusion in the Ni-Si (111) system is 400 - 500 Å at indoor temperature, and 70 – 80 Å in the Ni-PdSi-Si (111) system. The quality of the ohmic contact in the latter case does not change up to T = 800 K and withstands luminous flux illumination up to F = 1100 lux. It is shown that the resistivity of the PdSi film passes through a minimum at T = 900 – 1000 K. An analysis of the results obtained will be given in the article. [ABSTRACT FROM AUTHOR]

The paper reports the results of study of composition, emission, and optical properties of polycrystalline W and Mo samples implanted with Ba+ ions and coated with submonolayer Ba atoms by applying Auger electron spectroscopy, secondary electron emission coefficient σ technique, as well as the photoelectron quantum yield Y. The experimental part was carried out by using the instrumentation and under vacuum Р ≈ 10-6 Pa. It is shown that during the implantation of Ba ions in the surface layers of refractory metals, a mechanical mixture of the W + Ba and Mo-Ba types is formed. It has been established that the values of the coefficient of secondary electron emission σ and the quantum yield of photoelectrons Y at the same value of the work function еφ in the case of implantation of Ba+ ions are much larger than in the case of deposition of atoms. The obtained experimental results are substantiated by theoretical calculations. [ABSTRACT FROM AUTHOR]

Using the methods of ultraviolet photoelectron spectroscopy, light absorption spectroscopy, and true secondary electrons, the effects of deposition of Cs atoms with a thickness of 1 monolayer on the density of electronic states in the valence and conduction bands, energy band parameters, and quantum yield of photoelectrons have been studied for the first time. It has been established that when cesium is deposited on the surface of cobalt disilicide with a thickness of 1 monolayer, the value of Еg and the positions of the maxima of the density of states of valence electrons practically do not change, the work function of photoelectrons decreases to 3 eV, and the quantum yield of photoelectrons increases by a factor of 3 or more. After deposition of Cs on the surface of CoSi2/Si (111) with a thickness of d 500 Å, the yield of true secondary electrons into vacuum increases, and the beginning of the spectrum shifts towards lower energies by ~ 2.4 eV, i.e., the potential barrier (electron affinity ) decreases by 2.4 eV. The decrease in Ф is mainly due to the decrease in the width of the conduction band . In this work, for the first time, the positions of the maxima of the density of free electron states in the conduction band of CoSi2 are experimentally determined. It is shown that the maxima are located at energies of 0.8 and 1.9 eV below the vacuum level. [ABSTRACT FROM AUTHOR]