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Since the early days of the investigation on resistive switching (RS), the independence of the ON-state resistance with actual cell area has been a trademark of filamentary-switching. However, with the continuous downscaling of the memory cell down to 10 x 10 nm2 and below, the persistence of this phenomena raises intriguing questions on the conductive filaments (CFs) and its dimensions. Particularly, the cell functionality demonstrated at relatively high switching current (> 100 μA) implies a high current density (> 106 A/cm2) inside a CF supposedly confined in few hundreds on nm3. We previously demonstrated a methodology for the direct observation of CFs in integrated devices namely scalpel SPM, which overcomes most of the characterization challenges imposed by the device structure and the small CF lateral dimensions. In this letter, we use scalpel SPM to clarify the scaling potential of HfO2-based valence change memory (VCM) by characterization of CFs programmed at relatively high switching current and by AFM tip-induced RS experiments. Besides the demonstration of a remarkable scaling potential for the VCM technology, our results are also used to clarify the present understanding on the AFM-based experiments.

The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing., Competing Interests: All authors declare no conflicts of interest or competing financial interests., (This journal is © The Royal Society of Chemistry.)

In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO 2 MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO 2 MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO 2 MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory.

The next generation of tunable photonics requires highly conductive and light inert interconnects that enable fast switching of phase, amplitude, and polarization modulators without reducing their efficiency. As such, metallic electrodes should be avoided, as they introduce significant parasitic losses. Transparent conductive oxides, on the other hand, offer reduced absorption due to their high bandgap and good conductivity due to their relatively high carrier concentration. Here, we present a metamaterial that enables electrodes to be in contact with the light active part of optoelectronic devices without the accompanying metallic losses and scattering. To this end, we use transparent conductive oxides and refractive index matched dielectrics as the metamaterial constituents. We present the metamaterial construction together with various characterization techniques that confirm the desired optical and electrical properties.

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO 2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO 2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., "wake-up"), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe's confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

The continuous demand for improved performance in energy storage is driving the evolution of Li-ion battery technology toward emerging battery architectures such as 3D all-solid-state microbatteries (ASB). Being based on solid-state ionic processes in thin films, these new energy storage devices require adequate materials analysis techniques to study ionic and electronic phenomena. This is key to facilitate their commercial introduction. For example, in the case of cathode materials, structural, electrical and chemical information must be probed at the nanoscale and in the same area, to identify the ionic processes occurring inside each individual layer and understand the impact on the entire battery cell. In this work, we pursue this objective by using two well established nanoscale analysis techniques namely conductive atomic force microscopy (C-AFM) and secondary ion mass spectrometry (SIMS). We present a platform to study Li-ion composites with nanometer resolution that allows one to sense a multitude of key characteristics including structural, electrical and chemical information. First, we demonstrate the capability of a biased AFM tip to perform field-induced ionic migration in thin (cathode) films and its diagnosis through the observation of the local resistance change. The latter is ascribed to the internal rearrangement of Li-ions under the effect of a strong and localized electric field. Second, the combination of C-AFM and SIMS is used to correlate electrical conductivity and local chemistry in different cathodes for application in ASB. Finally, a promising starting point towards quantitative electrochemical information starting from C-AFM is indicated.

Wear mechanisms including fracture and plastic deformation at the nanoscale are central to understand sliding contacts. Recently, the combination of tip-induced material erosion with the sensing capability of secondary imaging modes of AFM, has enabled a slice-and-view tomographic technique named AFM tomography or Scalpel SPM. However, the elusive laws governing nanoscale wear and the large quantity of atoms involved in the tip-sample contact, require a dedicated mesoscale description to understand and model the tip-induced material removal. Here, we study nanosized sliding contacts made of diamond in the regime whereby thousands of nm 3 are removed. We explore the fundamentals of high-pressure tip-induced material removal for various materials. Changes in the load force are systematically combined with AFM and SEM to increase the understanding and the process controllability. The nonlinear variation of the removal rate with the load force is interpreted as a combination of two contact regimes each dominating in a particular force range. By using the gradual transition between the two regimes, (1) the experimental rate of material eroded on each tip passage is modeled, (2) a controllable removal rate below 5 nm/scan for all the materials is demonstrated, thus opening to future development of 3D tomographic AFM.

On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory properties while bending. Here we propose the ultra flexible resistive nonvolatile memory using Ag-decorated cellulose nanofiber paper (CNP). The Ag-decorated CNP devices showed the stable nonvolatile memory effects with 6 orders of ON/OFF resistance ratio and the small standard deviation of switching voltage distribution. The memory performance of CNP devices can be maintained without any degradation when being bent down to the radius of 350 μm, which is the smallest value compared to those of existing any flexible nonvolatile memories. Thus the present device using abundant and mechanically flexible CNP offers a highly flexible nonvolatile memory for portable flexible electronics.