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Dirac semimetals show nontrivial physical properties and can host exotic quantum states like Weyl semimetals and topological insulators under suitable external conditions. Here, by combining angle-resolved photoemission spectroscopy measurements (ARPES) and first-principle calculations, we demonstrate that Zintl-phase compound SmMg$_2$Bi$_2$ belongs to the close proximity to a topological Dirac semimetallic state. ARPES results show a Dirac-like band crossing at the zone-center near the Fermi level ($E_\mathrm {F}$) which is further confirmed by first-principle calculations. Theoretical studies also reveal that SmMg$_2$Bi$_2$ belongs to a $Z_2$ topological class and hosts spin-polarized states around the $E_\mathrm {F}$. Zintl's theory predicts that the valence state of Sm in this material should be Sm$^{2+}$, however we detect many Sm-4$f$ multiplet states (flat-bands) whose energy positions suggest the presence of both Sm$^{2+}$ and Sm$^{3+}$. It is also evident that these flat-bands and other dispersive states are strongly hybridized when they cross each other. Due to the presence of Sm$^{3+}$ ions, the temperature dependence of magnetic susceptibility $\chi(T)$ shows Curie-Weiss-like contribution in the low temperature region, in addition to the Van Vleck-like behaviour expected for the Sm$^{2+}$ ions. The present study will help in better understanding of the electronic structure, magnetism and transport properties of related materials., Comment: 11 pages, 7 figures

We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principles calculations from the perspective of their application as the electrode materials of MgO-based MTJs. These materials have highly spin-polarized conduction electrons with partially occupied $\Delta_1$ band, which is important for coherent tunneling in parallel magnetization configuration. The Curie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) as predicted from mean-field-approximation. The stability of ordered phase against various antisite disorders has been investigated. We discuss here the effect of "spin-orbit-coupling" on the electronic structure around Fermi level. Further, we investigate the electronic structure of IrCrMnZ/MgO heterojunction along (001) direction. IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity even at the MgO interface, with no interfacial states at/around Fermi level in the minority-spin channel. Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballistic spin-transport property for parallel magnetization configuration. We propose IrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weaker temperature dependence of tunneling magnetoresistance ratio, owing to their very high Curie temperatures., Comment: 24 pages, 11 figures

The magnetocaloric effect (MCE), magnetization, specific heat, and magnetostriction measurements were performed in both pulsed and steady high magnetic fields to investigate the magnetocaloric properties of Heusler alloys ${\mathrm{Ni}}_{50\ensuremath{-}x}{\mathrm{Co}}_{x}{\mathrm{Mn}}_{31.5}{\mathrm{Ga}}_{18.5}$ $(x=9 \mathrm{and} 9.7)$. From direct MCE measurements for ${\mathrm{Ni}}_{41}{\mathrm{Co}}_{9}{\mathrm{Mn}}_{31.5}{\mathrm{Ga}}_{18.5}$ up to 56 T, a steep temperature drop was observed for magnetic-field-induced martensitic transformation (MFIMT), designated as inverse MCE. Remarkably, this inverse MCE is apparent not only with MFIMT, but also in the magnetic-field-induced austenite phase. Specific heat measurements under steady high magnetic fields revealed that the magnetic field variation of the electronic entropy plays a dominant role in the unconventional magnetocaloric properties of these materials. First-principles based calculations performed for ${\mathrm{Ni}}_{41}{\mathrm{Co}}_{9}{\mathrm{Mn}}_{31.5}{\mathrm{Ga}}_{18.5}$ and ${\mathrm{Ni}}_{45}{\mathrm{Co}}_{5}{\mathrm{Mn}}_{36.7}{\mathrm{In}}_{13.3}$ revealed that the magnetic-field-induced austenite phase of ${\mathrm{Ni}}_{41}{\mathrm{Co}}_{9}{\mathrm{Mn}}_{31.5}{\mathrm{Ga}}_{18.5}$ is more unstable than that of ${\mathrm{Ni}}_{45}{\mathrm{Co}}_{5}{\mathrm{Mn}}_{36.7}{\mathrm{In}}_{13.3}$ and that it is sensitive to slight tetragonal distortion. We conclude that the inverse MCE in the magnetic-field-induced austenite phase is realized by marked change in the electronic entropy through tetragonal distortion induced by the externally applied magnetic field.

Using first-principles calculations, we studied Mn$_2$RuZ (Z=Al, Ga, Si, Ge) and their heterojunctions with MgO along (001) direction. All these alloys possess Hg$_2$CuTi-type inverse Heusler alloy structure and ferrimagnetic ground state. Our study reveals the half-metallic electronic structure with highly spin-polarized $\Delta_1$ band, which is robust against atomic disorder. Next we studied the electronic structure of Mn$_2$RuAl/MgO and Mn$_2$RuGe/MgO heterojunctions. We found that the MnAl- or MnGe-terminated interface is energetically more favorable compared to the MnRu-terminated interface. Interfacial states appear at the Fermi level in the minority-spin gap for the Mn$_2$RuGe/MgO junction. We discuss the origin of these interfacial states in terms of local environment around each constituent atom. On the other hand, in the Mn$_2$RuAl/MgO junction, high spin polarization of bulk Mn$_2$RuAl is preserved independent of its termination., Comment: 15 pages, 7 figures

MgO-barrier magnetic tunnel junctions with half-metallic Heusler alloy electrodes have attracted considerable attention for spintronics applications. However, there remain a couple of issues related to materials that should be resolved before practical use. Recently, quarterly equiatomic Heusler alloys have attracted attention as advanced Heusler alloys. CoIrMnZ (Z = Al, Si, Ga, and Ge) half-metallic Heusler alloys were designed and predicted to have moderate Curie temperatures and to be lattice-matched with the MgO barrier, which is advantageous compared to traditional Co2 Heusler alloys T. T [T. Roy et al., J. Magn. Magn. Mater. 498 (2020) 166092]. Here, we experimentally investigated the structure and magnetic properties of thin films composed of one of these alloys, CoIrMnAl, fabricated by sputtering deposition. We successfully obtained films with the B2 chemical ordering, even without a post-annealing process. The lattice constants for the films annealed at 500–600 ∘C were approximately equal to the predicted values. The magnetization at 10 K was close to 500 kA/m, and the Curie temperature was approximately 400 K, which were approximately 70% of the values predicted for the fully ordered structure. The magnetic properties observed in the B2-ordered films were well explained by ferrimagnetism that appeared in the B2-ordered CoIrMnAl with full-swap disorders of Co-Ir and Mn-Al and almost full-swap disorder of Co-Mn, which was predicted from the first-principles calculations.

Using first-principles calculations based on density functional theory, we probe the electronic and magnetic properties of X$_{2}$PtGa (X being Cr, Mn, Fe, Co) Heusler alloys. Our calculations predict that all these systems possess inverse Heusler alloy structure in their respective ground states. Application of tetragonal distortion leads to lowering of energy with respect to the cubic phase for all the materials. The equilibrium volumes of both the phases are nearly the same. These results of our calculations indicate that all these materials are prone to undergo martensite transition, as has been recently shown theoretically for Mn$_{2}$PtGa in the literature. Ground state with a tetragonal symmetry of these materials is supported by the observation of soft tetragonal shear constants in their cubic phase. By comparing the energies of various types of magnetic configurations of these alloys we predict that Cr$_{2}$PtGa and Mn$_{2}$PtGa possess ferrimagnetic configuration whereas Fe$_{2}$PtGa and Co$_{2}$PtGa possess ferromagneic configuration in their respective ground states., 12 pages, 8 figures

The electronic structure of Au-Sn intermetallic layers of different compositions grown on Au(111) to the thickness of several nanometers has been studied in this work. The layer, interface and the substrate related components in the Au 4$f$ and Sn 4$d$ core-level spectra obtained using x-ray photoelectron spectroscopy (XPS) vary with deposition parameters to reveal the details of the Au-Sn formation. While AuSn is grown by deposition at room temperature, Au rich compounds form as a result of heat treatment through inter diffusion of Au and Sn. Deposition at high temperature forms more Au rich compositions compared to post annealing at the same temperature due to the kinetic energy of the impinging Sn atoms in the former case. Post annealing, on the other hand, stabilizes the bulk phases such as AuSn and Au$_5$Sn and exhibits an activated behavior for transition from the former to the latter with increasing temperature. The XPS valence band spectra of AuSn and Au$_{5}$Sn layers show good agreement with the density functional theory calculation, indicating that these have the bulk structure reported in literature. However, the influence of anti-site defects is observed in Au$_5$Sn. Low energy electron diffraction study reveals that although the AuSn layer is ordered, its top surface is disordered at room temperature. Surface order is obtained by annealing or deposition at elevated temperatures and dispersing bands are observed by angle resolved photoemission spectroscopy. Both electron-like and hole-like bands are evident for the ($\sqrt{3}$$\times$$\sqrt{3}$)R30$^{\circ}$ phase, while a nearly free electron-like parabolic surface state is observed for the p(3$\times$3)R15$^{\circ}$ phase., Comment: Phys. Rev. B (in press); 38 pages, 14 figures and 1 table in main text and 3 figures and 5 tables in supplementary material

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is $380\phantom{\rule{0.16em}{0ex}}{\mathrm{emu}/\mathrm{cm}}^{3}$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

Nowadays advanced magnetic tunnel junction applications demand very high tunnel magnetoresistance at room temperature, thus it is quite important to explore high Curie temperature Tc half-metallic Heusler alloys. In this article rst-principles calculation unveiled that NiCrMnSi has Tc of 1200 K comparable to that of the traditional Co2MnSi Heusler alloys, even though it does not contain Co element. In addition, we examined whether NiCrMnSi Heulser phase lms can be obtained by a magnetron sputtering on MgO substrates. The results of the structural analysis and rst-principles calculations indicated that NiCrMnSi Heusler phase is metastable. A possible route to obtain metastable NiCrMnSi Heusler alloy is to utilize appropriate templates.

Using first principles calculations based on density functional theory, we study electronic and magnetic properties of CoIrMnZ (Z = Al, Si, Ga, Ge) Heusler systems. Based on the electronic structure calculations, CoIrMnSi and CoIrMnGe are predicted to be half-metallic. For the studied systems, the ground state magnetic configurations are found to be ferromagnetic with magnetic moment consistent with the Slater-Pauling rule. The calculated ferromagnetic transition temperatures are much higher than the room temperature for all the cases. The effect of spin orbit coupling has been discussed on the electronic structure for all the systems studied here. Furthermore, we construct junctions with MgO along (001) direction. The MnZ terminations are found to be energetically more favourable compared to the CoIr terminations. After discussing the tunnelling conductance, we find that CoIrMnSi/MgO/CoIrMnSi could be a promising magnetic tunnelling junction (MTJ) candidate.

Using first-principles calculations based on density functional theory, we have studied the mechanical, electronic, and magnetic properties of Heusler alloys, namely, Ni$_{2}BC$ and Co$_{2}BC$ ($B$ = Sc, Ti, V, Cr and Mn as well as Y, Zr, Nb, Mo and Tc; $C$ = Ga and Sn). On the basis of electronic structure (density of states) and mechanical properties (tetragonal shear constant), as well as magnetic interactions (Heisenberg exchange coupling parameters), we probe the properties of these materials in detail. We calculate the formation energy of these alloys in the (face-centered) cubic austenite structure to probe the stability of all these materials. From the energetic point of view, we have studied the possibility of the electronically stable alloys having a tetragonal phase lower in energy compared to the respective cubic phase. A large number of the magnetic alloys is found to have the cubic phase as their ground state. On the other hand, for another class of alloys, the tetragonal phase has been found to have lower energy compared to the cubic phase. Further, we find that the values of tetragonal shear constant show a consistent trend : a high positive value for materials not prone to tetragonal transition and low or negative for others. In the literature, materials, which have been seen to undergo the martensite transition, are found to be metallic in nature. We probe here if there is any Heusler alloy which has a tendency to undergo a tetragonal transition and at the same time possesses a high spin polarization at the Fermi level. From our study, it is found that out of the four materials, which exhibit a martensite phase as their ground state, three of these, namely, Ni$_{2}$MnGa, Ni$_{2}$MoGa and Co$_{2}$NbSn have a metallic nature; on the contrary, Co$_{2}$MoGa exhibits a high spin polarization., 31 pages, 17 figures

Using density functional theory based calculations, we have carried out in-depth studies of effect of Co substitution on the magnetic properties of Ni and Pt-based shape memory alloys. We show the systematic variation of the total magnetic moment, as a function of Co doping. A detailed analysis of evolution of Heisenberg exchange coupling parameters as a function of Co doping has been presented here. The strength of RKKY type of exchange interaction is found to decay with the increase of Co doping., Comment: 6 pages, 7 figures

First-principles density functional theory based calculations have been used to predict the bulk mechanical properties of magnetic shape memory Heusler alloy Ni2MnGa substituted by copper (Cu), platinum (Pt), palladium (Pd) and manganese (Mn) at the Ni site. The elastic constants of Ni2MnGa alloy with and without substitution are calculated. We analyze and compare in detail the bulk mechanical properties for these alloys, in particular, the ratio between the calculated bulk and shear modulii, as well as the Poisson’s ratio and Young’s modulii. This analysis further based on an empirical relation, indicates that Pt2MnGa may inherently be the least brittle material, among the above-mentioned alloys. Interesting difference has been observed between the shear modulii calculated from Voigt’s and Reuss’s method. This has been explained in terms of the values of the tetragonal shear constant C′ of the materials. Study of Heisenberg exchange coupling parameters and Curie temperature as well as density of states of the materials shows the effect of substitution at the Ni site on the magnetic and electronic properties, respectively.

Influence of disorder, antisite defects, martensite transition and compositional variation on the magnetic properties and electronic structure of Mn$_2$NiGa and Mn$_{1+x}$Ni$_{2-x}$Ga magnetic shape memory alloys have been studied by using full potential spin-polarized scalar relativistic Korringa-Kohn-Rostocker (FP-SPRKKR) method. Mn$_2$NiGa is ferrimagnetic and its total spin moment increases when disorder in the occupancy of Mn$_{\rm Ni}$ (Mn atom in Ni position) is considered. The moment further increases when Mn-Ga antisite defect[1] is included in the calculation. A reasonable estimate of $T_C$ for Mn$_2$NiGa is obtained from the exchange parameters for the disordered structure. Disorder influences the electronic structure of Mn$_2$NiGa through overall broadening of the density of states and a decrease in the exchange splitting. Inclusion of antisite defects marginally broaden the minority spin partial DOS (PDOS), while the majority spin PDOS is hardly affected. For Mn$_{1+x}$Ni$_{2-x}$Ga where 1$\geq$$x$$\geq$0, as $x$ decreases, Mn$_{\rm Mn}$ moment increases while Mn$_{\rm Ni}$ moment decreases in both austenite and martensite phases. For $x$$\geq$ 0.25, the total moment of the martensite phase is smaller compared to the austenite phase, which indicates possible occurrence of inverse magnetocaloric effect. We find that the redistribution of Ni 3$d$- Mn$_{\rm Ni}$ 3$d$ minority spin electron states close to the Fermi level is primarily responsible for the stability of the martensite phase in Mn-Ni-Ga., Comment: 10 pages, 5 figures