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28 results on '"Tsatsulnikov, A. F."'

1. Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells

Author

Poltavtsev, S. V., Solovev, I. A., Akimov, I. A., Chaldyshev, V. V., Lundin, W. V., Sakharov, A. V., Tsatsulnikov, A. F., Yakovlev, D. R., and Bayer, M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We study the coherent dynamics of localized excitons in 100-periods of 2.5 nm thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43 meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 {\mu}eV as well as the relatively weak exciton-phonon interaction (0.8 {\mu}eV/K) confirm a strong, quantum dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers., Comment: 4 figs

Published
2018
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2. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Author

Sakharov, Alexei V., primary, Arteev, Dmitri S., additional, Zavarin, Evgenii E., additional, Nikolaev, Andrey E., additional, Lundin, Wsevolod V., additional, Prasolov, Nikita D., additional, Yagovkina, Maria A., additional, Tsatsulnikov, Andrey F., additional, Fedotov, Sergey D., additional, Sokolov, Evgenii M., additional, and Statsenko, Vladimir N., additional

Published
2023
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6. SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs.

Author

Kukushkin, Sergey A., Markov, Lev K., Pavlyuchenko, Alexey S., Smirnova, Irina P., Osipov, Andrey V., Grashchenko, Alexander S., Nikolaev, Andrey E., Sakharov, Alexey V., Tsatsulnikov, Andrey F., and Sviatets, Genadii V.

Subjects
FLIP chip technology, EPITAXIAL layers, ATOMS, EPITAXY, MANUFACTURING processes, HETEROSTRUCTURES
Abstract

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers with low defect content and facilitates transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by the MCSA and elaborates on the benefits of using these substrates in LED production. Additionally, the advantages of the growth interface between SiC and Si materials are discussed. Moreover, it is found that thinner SiC layers (<200 nm) contribute to the scattering of the LED's own radiation in the heterostructure waveguide, which decreases its absorption by silicon. For flip-chip LEDs with the substrate removed, substrates with thicker SiC layers (~400 nm) and a growth porous layer of several microns at the SiC-Si interface is utilized to simplify Si substrate removal and enhance the manufacturing process's cost-effectiveness. [ABSTRACT FROM AUTHOR]

Published
2023
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8. Study of Ga2O3 deposition by MOCVD

Author

Lundin, W V, primary, Rodin, S N, additional, Sakharov, A V, additional, Yagovkina, M A, additional, Smirnov, A N, additional, Eliseyev, I A, additional, Davydov, V Yu, additional, and Tsatsulnikov, A F, additional

Published
2021
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13. Proton irradiation effects on GaN-based epitaxial structures

Author

Lebedev, A A, primary, Davydov, V Yu, additional, Smirnov, A N, additional, Eliseyev, I A, additional, Davydovskaya, K S, additional, Zavarin, E E, additional, Zakheim, D A, additional, Lundin, W V, additional, Nikolaev, A E, additional, Sakharov, A V, additional, Tsatsulnikov, A F, additional, Zubov, A V, additional, and Kozlovski, V V, additional

Published
2020
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15. Developing of normally-off p-GaN gate HEMT

Author

Kukhtyaeva, O B, primary, Egorkin, V I, additional, Zemlyakov, V E, additional, Kapaev, V V, additional, Zaitsev, A A, additional, Tsatsulnikov, A F, additional, Nikolaev, A E, additional, and Sakharov, A V, additional

Published
2019
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19. Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

Author

Yadav, Amit, Titkov, Ilya E., Sakharov, Alexei V., Lundin, Wsevolod V., Nikolaev, Andrey E., Sokolovskii, Grigorii S., Tsatsulnikov, Andrey F., Rafailov, Edik U., Yadav, Amit, Titkov, Ilya E., Sakharov, Alexei V., Lundin, Wsevolod V., Nikolaev, Andrey E., Sokolovskii, Grigorii S., Tsatsulnikov, Andrey F., and Rafailov, Edik U.

Abstract

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

Published
2018

21. Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode

Author

Titkov, Ilya E., Yadav, Amit, Karpov, Sergey Yu., Sakharov, Alexei V., Tsatsulnikov, Andrey F., Slight, Thomas J., Gorodetsky, Andrei, and Rafailov, Edik U.

Abstract

The future generation of modern illumination should not only be cheap and highly efficient, but also demonstrate high quality of light, light which allows better color differentiation and fidelity. Here we are presenting a novel approach to create a white solid-state light source providing ultimate color rendition necessary for a number of applications. The proposed semi-hybrid device combines a monolithic blue-cyan light emitting diode (MBC LED) with a green-red phosphor mixture. It has shown a superior color rendering index (CRI), 98.6, at correlated color temperature of around 3400 K. The MBC LED epi-structure did not suffer from the efficiency reduction typical for monolithic multi-color emitters and was implemented in the two most popular chip designs: “epi-up” and “flip-chip”. Redistribution of the blue and cyan band amplitudes in the white-light emission spectrum, using the operating current, is found to be an effective tool for fine tuning the color characteristics. (Figure presented.).

Published
2016

23. Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Author

Tsatsulnikov, Andrei F., Lundin, Wsevolod V., Sakharov, Alexei V., Nikolaev, Andrey E., Zavarin, E.E., Usov, S.O., Yagovkina, Maria A., Hÿtch, Martin, Korytov, Maxim, Cherkashin, Nikolay, Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] ( RAS ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Matériaux et dispositifs pour l'Electronique et le Magnétisme ( CEMES-MEM ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3)

Subjects
010302 applied physics, Luminescence, Light Emitting Diodes, Metalorganic Vapor Phase Epitaxy, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Growth Interruption, [SPI.TRON]Engineering Sciences [physics]/Electronics, [ SPI.TRON ] Engineering Sciences [physics]/Electronics, Quantum Wells, 0103 physical sciences, Indium Gallium Nitride, Quantum Dots, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, 0210 nano-technology
Abstract

cited By 4; International audience; Here, we develop a technological approach to the formation of three-dimensional island-like structures in the active medium of InGaN/GaN based light emitting diodes with an enhanced efficiency with respect to reference quantum wells emitting at the same wavelengths. The reference structures contain two-dimensional In x Ga1– x N quantum wells with x ≤ 18% immediately overgrown after their formation. The method consists in the application of a growth interruption in N2 or N2–H2 mixed atmospheres at different H2 flows and times after the deposition of In0.18Ga0.82N quantum wells, prior to their overgrowth by a GaN layer. The growth interruptions allow a controlled blue shift of the emission peak position with respect to that of the In0.18Ga0.82N structure. The integrated photoluminescence intensity of the so-formed structures is about 1.5 times higher than that of the reference structures emitting at the same peak wavelengths. Light emitting diode structures subjected to growth interruption exhibit higher external quantum efficiency than the reference structures emitting at the same wavelengths. We demonstrate that the observed phenomenon is related to a better charge carrier confinement within a quantum well due to the transformation of planar InGaN layers into laterally connected flat islands.

Published
2015

24. Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Author

Jeon, Heonsu, Tu, Li-Wei, Krames, Michael R., Strassburg, Martin, Zulonas, Modestas, Titkov, Ilya E., Yadav, Amit, Fedorova, Ksenia a., Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Meredith, Wyn, Rafailov, Edik U., Slight, Thomas J., Jeon, Heonsu, Tu, Li-Wei, Krames, Michael R., Strassburg, Martin, Zulonas, Modestas, Titkov, Ilya E., Yadav, Amit, Fedorova, Ksenia a., Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Meredith, Wyn, Rafailov, Edik U., and Slight, Thomas J.

Abstract

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Published
2016

25. Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Author

Titkov, Ilya E., Yadav, Amit, Zerova, Vera L., Zulonas, Modestas, Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Rafailov, Edik U., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, and Fujioka, Hiroshi

Abstract

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Published
2014

27. Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Author

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Titkov, Ilya E., Yadav, Amit, Zerova, Vera L., Zulonas, Modestas, Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Rafailov, Edik U., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Titkov, Ilya E., Yadav, Amit, Zerova, Vera L., Zulonas, Modestas, Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., and Rafailov, Edik U.

Abstract

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Published
2014

28. Terahertz Radiation Emission by Hot Electrons from AlGaN/GaN Heterostructure.

Author

SHALYGIN, V. A., VOROBJEV, L. E., FIRSOV, D. A., SOFRONOV, A. N., MELENTYEV, G. A., LUNDIN, W. V., NIKOLAEV, A. E., SAKHAROV, A. V., and TSATSULNIKOV, A. F.

Subjects
TERAHERTZ technology, HOT carriers, HETEROSTRUCTURES, ELECTRON gas, ELECTRON temperature, ELECTRIC fields
Abstract

In the present paper we report on the observation and study of intense spontaneous THz emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of two-dimensional electron gas in lateral electric field. The experimental results are compared with the model of blackbody-like thermal emission of hot 2D electrons. Complementary transport measurements and theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of non-equilibrium optical phonon accumulation is discussed. [ABSTRACT FROM AUTHOR]

Published
2011
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