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1. Special Issue on the APSPT 2021

Author

Chen, Jian-Zhang, primary, Wang, Meng-Jiy, additional, Lin, Kun-Mo, additional, Cheng, Yun-Chien, additional, Teii, Kungen, additional, and Ito, Hiroaki, additional

Published
2023
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5. Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma-Enhanced Chemical Vapor Deposition

Author

Huang, Lei, Ikematsu, Hiroto, Kato, Yoshimine, and Teii, Kungen

Abstract

Moderate-pressure microwave plasmas are used to prepare nitrogen-incorporated carbon nanowalls (CNWs) by chemical vapor deposition using acetylene and methane as precursor gases. The growth temperature range for acetylene is shown to be totally lower than that (>1000 °C) for methane, which is attributed to the difference in degree of hydrogenation of radical species in the two plasmas. The structural order and cluster size of sp2 carbon phase in CNWs characterized by the Raman spectroscopy increase initially and, then, decrease with temperature in each temperature range, showing the same trend as the inverse of the sheet resistance of CNWs. The results indicate that the carrier transport in CNWs depends exclusively on the microstructure of sp2 carbon phase, despite a large difference in the growth temperature range depending on the precursor gas.

Published
2023
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6. Role of hydrogen in ultrananocrystalline diamond deposition from Argon-rich microwave plasmas

Author

Liu, Chung-Ming, Teii, Kungen, Sung, Ta-Lun, Ting, Kuen, and Teii, Shinriki

Subjects
Business, Chemistry, Electronics, Electronics and electrical industries
Abstract

A two-step process consisting of an initial nucleation stage with hydrogen followed by a growth stage without hydrogen is used to examine the role of hydrogen in ultrananocrystalline diamond deposition in Ar-rich microwave plasmas. An addition of 5% of [H.sub.2] to Ar-rich/C[H.sub.4] in the initial stage increases the nucleation density (up to [10.sup.9] [cm.sup.-2]) and the mean grain size (around 10 nm), accompanied by some improvement of crystallinity. However, an addition of [H.sub.2] above 10% suppresses nucleation by the etching of nucleation sites. The introduction of hydrogen atoms promotes the termination and stabilization of diamond grain surfaces toward [sp.sup.3] configuration, which are responsible for enhancing nucleation and crystallization. In contrast, Ar promotes renucleation by increasing the production of [C.sub.2] radicals in the plasma, which causes the degradation of the stabilization on the growing surfaces. Index Terms--Chemical vapor deposition (CVD), hydrogen, microwave plasma, nanocrystalline diamond, nucleation, optical emission, surface.

Published
2009

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