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8. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

Author

Lee HH, Bae M, Jo SH, Shin JK, Son DH, Won CH, Jeong HM, Lee JH, and Kang SW

Subjects
Electricity, Humans, Photoelectron Spectroscopy, Aluminum Compounds chemistry, Biosensing Techniques instrumentation, C-Reactive Protein analysis, Electrons, Gallium chemistry, Transistors, Electronic
Abstract

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

Published
2015
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