1. Ferromagnetic GaN:MnAlSi nanowires
- Author
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Congkang Xu, Seokwon Yoon, Junghwan Chun, Ju-Jin Kim, Keehan Rho, Dong Eon Kim, Beom Jim Kim, and Seong-Eok Han
- Subjects
Semiconductor ,Materials science ,Ferromagnetism ,Condensed matter physics ,Magnetism ,business.industry ,Doping ,Wide-bandgap semiconductor ,Nanowire ,General Physics and Astronomy ,Curie temperature ,Magnetic semiconductor ,business - Abstract
The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7at.% is reported. The magnetism measurements show that the Curie temperature is above 350K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n-type semiconductor.
- Published
- 2006
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