1. Characterization and Modeling of Quantum Dot Behavior in FDSOI Devices
- Author
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S. Pati Tripathi, S. Bonen, A. Bharadwaj, T. Jager, C. Nastase, S. Iordanescu, G. Boldeiu, M. Pasteanu, A. Nicoloiu, I. Zdru, A. Muller, and S. P. Voinigescu
- Subjects
Compact modeling ,Coulomb Blockade ,cryogenics ,semiconductor quantum dot ,silicon germanium ,silicon-on-insulator ,Electrical engineering. Electronics. Nuclear engineering ,TK1-9971 - Abstract
A compact analytical model is proposed along with a parameter extraction methodology to accurately capture the steady-state (DC) sequential tunneling current observed in the subthreshold region of the transfer $I_{DS}-V_{GS}$ characteristics of MOSFETs at cryogenic temperatures. The model is shown to match measurements of $p$ -MOSFETs and $n$ -MOSFETs manufactured in a commercial 22nm FDSOI foundry technology, with reasonable accuracy across bias conditions and temperature (2 K - 50 K). Furthermore, the extracted model parameters are used to analyze the impact of the gate and drain voltages and of layout geometry on the device characteristics.
- Published
- 2022
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