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This study aimed to evaluate the effects of two biomacromolecules, fermented wheat bran polysaccharides (FWBPs) and sodium humate (SH), on growth performance, nutrient digestibility, digestive enzyme activity, antioxidant status, and immunity of broilers. A total of 144 male, one-day-old Arbor Acres broilers were randomly divided into three dietary groups: control (CON), 0.4% FWBPs, and 0.1% SH, with six replicates of eight birds. The FWBPs and SH groups had a greater body weight (BW) at 21 and 42 d, average daily weight gain (ADG) in the starter period, average daily feed intake (ADFI) in the overall period, and feed-to-gain ratio (F:G) in the grower period. However, the ADFI was decreased by FWBPs supplementation and increased by SH supplementation in the grower period. The dry matter (DM) and organic matter (OM) digestibility were higher in the SH group at 21 d. At 21 d, the FWBPs group had an increased duodenal trypsin and serum glutathione peroxidase (GSH-Px) activity and immunoglobulin M (IgM) concentration, and a decreased liver malondialdehyde (MDA) concentration. The SH group had increased duodenal lipase activity, serum IgM, and interleukin-2 concentrations but decreased liver MDA concentrations. At 42 d, FWBPs and SH supplementation decreased duodenal trypsin and chymotrypsin and serum superoxide dismutase activity. Jejunum chymotrypsin activity and liver MDA content were decreased in the SH group. In conclusion, dietary FWBPs or SH supplementation during the starter period can improve growth performance and nutrient digestibility and enhance antioxidant capacity and immunity of broilers.

In this paper, it is emphasized that the dynamical cause for the A-B effect is the superimposed energy between the magnetic field produced by the moving charges and that in the solenoid, instead of the existence of the vector potential. If such a superposition between the magnetic fields can be eliminated, the A-B effect should not be observed any more. To verify this viewpoint, a new experimental method using a SQUID is suggested in this paper.

The oxidation behavior of an Fe 61 B 15 Zr 8 Mo 7 Co 5 Y 2 Cr 2 bulk metallic glass (Fe7-BMG) was investigated in three oxygen-containing atmospheres over the oxygen partial pressure range of 10 3 –10 5 Pa at 650 °C. The oxidation kinetics of the Fe7-BMG followed the parabolic rate law in all cases, indicating that solid-state diffusion is the rate-controlling step during oxidation. The oxidation rate constants ( k p values) increased with increasing oxygen partial pressure, implying a typical scaling behavior with a p-type semiconductivity. Duplex scales formed on the Fe7-BMG consisted of an outer layer of mostly iron oxides (Fe 2 O 3 /Fe 3 O 4 ) and minor amounts of B 2 O 3 , and a heterophasic inner layer of mostly tetragonal-ZrO 2 (t-ZrO 2 ) intermixed with non-oxidized intermetallic phases.

The drawing process including the locking and pulling phase under a drawbead of circular and rectangular section shape is simulated by means of a static-implicit FE code developed by the authors for 2D elasto-plastic simulation of sheet metal forming. The influence of the main bead geometrical parameters on the binder hold down force (BHDF) and drawbead restraining force (DBRF) is analyzed. The deformation law and loading characteristics of the sheet around the drawbead are studied during the two sequential phases. The calculated results show a good agreement with the experimental data. The investigation lays a foundation for setting up an applied drawbead model in the future 3D simulation of drawbeads.

An optimized pseudomorphic high electron mobility transistor (PHEMT) epitaxial structure processed with a novel single gate recess technique is shown to achieve 850 mW of output power (760 mW/spl middot/mm/sup -1/ saturated power density) with 50% power added efficiency at X-band when operated at a CW and nearly class A condition. The multi-finger devices (14/spl times/80 /spl mu/m) retain high extrinsic transconductances (380-420 mS/spl middot/mm/sup -1/), with exceptional breakdown voltage (>18 V). The combination of optimized epi layer structure design and uniform gate recess using a damage-free, etch-stop, dry plasma processing step produces consistently and uniformly high f/sub T/ values (80 GHz at V/sub DS/=1 V, 35 GHz at V/sub DS/=7 V) even at low I/sub DS/ (100 mA/spl middot/mm/sup -1/). >