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1. Chemical structure of ultrathin silicon nitride films grown by low-energy (0.25-5 keV) nitrogen implantation: an angle-resolved X-ray photoelectron spectroscopy Si 2p study

Author

Palacio, C. and Arranz, A.

Subjects
Chemistry, Physical and theoretical -- Research, Silicon -- Physiological aspects, Nitrides -- Physiological aspects, Nitrogen -- Physiological aspects, Ion implantation -- Physiological aspects, Thin films -- Growth, Photoelectrons -- Physiological aspects, Chemicals, plastics and rubber industries
Published
2002

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