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14 results on '"Murugesan, Mariappan"'

1. Investigation of temperature dependence of microwave-induced characteristics of a NbN Josephson junction array

Author

Shoji, Akira, Takashima, Hiroshi, Murugesan, Mariappan, Obara, Haruhiko, and Yamamori, Hirotake

Subjects
Niobium -- Electric properties, Waveguides -- Design and construction, Josephson junction -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

The surface resistance of NbN films is measured using the dielectric resonator method at 22 GHz and the temperatures from 5.8 K to 14.8 K to investigate the temperature dependence of microwave-induced characteristics of a NbN Josephson junction array. The rapid decrease in the maximum constant-voltage-step amplitude above 10K is due to significant reduction in microwave power in the junction array.

Published
2005

2. Mechanical Characteristics of Thin Die/Wafers in Three-Dimensional Large-Scale Integrated Systems

Author

Mitsumasa Koyanagi, Takafumi Fukushima, Murugesan Mariappan, Jichoel Bea, and Kang-Wook Lee

Subjects
Engineering drawing, business.product_category, Materials science, Plasma etching, Polishing, Young's modulus, Condensed Matter Physics, Industrial and Manufacturing Engineering, Electronic, Optical and Magnetic Materials, Grinding, symbols.namesake, Residual stress, Chemical-mechanical planarization, symbols, Die (manufacturing), Wafer, Electrical and Electronic Engineering, Composite material, business
Abstract

A thickness value of less than 50 μm for die/wafers is a must meet criteria in 3-D large-scale silicon device integration, in order to reduce interconnect lengths and resistive-capacitive delays. The mechanical properties of such ultra-thin die/wafers, namely, Young's modulus, hardness, etc., with respect to 1) different die thinning processes (chemical mechanical polishing, plasma etching, dry polishing, kai-dry polishing, poly grinding, ultra-poly grinding, #2000, etc.); 2) various wafer thicknesses (10, 20, 30, 40, 50, 100, and 200 μm); and 3) different wafer types (P/P+, P/P-, and wafers with internal-gettering layers) were investigated by using a nano-indenter. The mechanical characteristic data obtained for the thin die/wafers were well supported by their corresponding residual stress values (obtained by laser micro-Raman spectroscopy) and the crystal mis-orientation results (obtained via electron back-scatter diffraction). The chemically-mechanically polished ultrathin dies/wafers were found to be extremely good from the perspective of both mechanical strength and residual stress when compared to their counter parts fabricated by all other die thinning methods considered in this study.

Published
2014

3. Deteriorated Device Characteristics in 3D-LSI Caused by Distorted Silicon Lattice

Author

Mitsumasa Koyanagi, Kang-Wook Lee, Murugesan Mariappan, Shigeru Kimura, Yasuhiko Imai, Tetsu Tanaka, Takafumi Fukushima, Hisashi Kino, and Jichoel Bea

Subjects
Diffraction, Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, Integrated circuit, Copper, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, Compressive strength, chemistry, law, X-ray crystallography, MOSFET, symbols, Electrical and Electronic Engineering, Raman spectroscopy
Abstract

Silicon-lattice distortion in the 50- μm-thick stacked large scale integrated circuit (LSI) chip over Cu-Sn μ-bumps was studied by synchrotron-assisted micro-X-ray diffraction. The top and bottom surfaces of the upper chip experienced 0.25% and 0.1% tensile strain (equivalent to 450 and 200 MPa of tensile stress), respectively. Si [004] plane showed a maximum tilt value of +0.45° and -0.25°, respectively, over the μ-bump and in the bump-space region. Raman spectroscopy revealed that upper stacked chip experienced ~ 1000 MPa of tensile stress and ~ -200 MPa of compressive stress, respectively, over the μ-bump and bump-space regions. Distorted Si-lattice in 3D-LSIs caused 4% and 12% change in ON-current characteristic for n- and p-MOSFET devices, respectively.

Published
2014

11. Self-Assembly of Chip-Size Components with Cavity Structures: High-Precision Alignment and Direct Bonding without Thermal Compression for Hetero Integration

Author

Fukushima, Takafumi, primary, Konno, Takayuki, additional, Iwata, Eiji, additional, Kobayashi, Risato, additional, Kojima, Toshiya, additional, Murugesan, Mariappan, additional, Bea, Ji-Chel, additional, Lee, Kang-Wook, additional, Tanaka, Tetsu, additional, and Koyanagi, Mitsumasa, additional

Published
2011
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12. Control of Porosity and Composition in Large-Area YBCO Films to Achieve Micrometer Thickness and High Jc on Sapphire Substrates.

Author

Bagarinao, Katherine D., Yamasaki, Hirofumi, Nie, Jiacai C., Murugesan, Mariappan, Obara, Haruhiko, and Nakagawa, Yoshihiko

Subjects
THIN films, ELECTRIC currents, PULSED laser deposition, COATING processes, SURFACE coatings, SUPERCONDUCTIVITY
Abstract

Relatively thick YBCO thin films (thickness d > 0.5 μm) ideal for fault current limiter as well as microwave applications have been successfully prepared by large-area pulsed laser deposition (PLD) on CeO2-buffered sapphire substrates. The attainment of an unusually high film thickness (up to 2.0 μm) without microcracking is attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The effect of using YBCO targets with varied Y:Ba:Cu ratios on film porosity and surface morphology was investigated in detail. Using the optimum target composition, uniform critical current densities (Jc) ranging from ∼ 4.5 MA/cm² at d ∼ 0.23 μm to ∼ 1.75 MA/cm² at d ∼ 0.6 μm have been achieved. Characterization of a film with d ∼ 0.5 μm showed low microwave surface resistance values [Rs(77.3 K) ≈ 2.09 mΩ and Rs(20 K) ≈ 227 μΩ at 22 GHz] comparable to the best YBCO films reported by other studies. [ABSTRACT FROM AUTHOR]

Published
2005
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13. Novel Approach to Microcrack-Free Thick YBa2Cu3O7-δ Films on γ-Cut Sapphire Buffered With CeO2.

Author

Jia Cai Nie, Yamasaki, Hirofumi, Nakagawa, Yoshihiko, Develos-Bagarinao, Katherine, Murugesan, Mariappan, Obara, Haruhiko, and Mawatari, Yasunori

Subjects
COATING processes, SURFACES (Technology), SURFACE coatings, LASERS, PULSED laser deposition, MICROSCOPY
Abstract

Stoichiometric YBa2Cu3O7-δ (YBCO) films were fabricated by pulsed laser deposition on deliberately miscut Al2O3 (1...102) buffered with CeO2. Atomic force microscopy observations demonstrated that 600 nm-thick YBCO films were microcrack-free. Characterization of the films revealed a porous morphology, consisting of interconnected islands and deep holes (pores). This feature is considered as one of the sources contributing to the strain-relieving mechanism responsible for the increase in film thickness without microcracking. We observed Tc = 90±0.5K, Jc(77.3K, 0 T) = 1.5 - 2.0 × 106 A/cm², and Jct(77.3 K, 0 T) ∼ 120 A/cm. In addition, this new approach, using the deliberately miscut sapphire as a substrate for YBCO, is also applicable to other kinds of deposition techniques. [ABSTRACT FROM AUTHOR]

Published
2005
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14. Novel Approach to Microcrack-Free Thick YBa2Cu3O7-δ Films on γ-Cut Sapphire Buffered With CeO2.

Author

Jia Cai Nie, Yamasaki, Hirofumi, Nakagawa, Yoshihiko, Develos-Bagarinao, Katherine, Murugesan, Mariappan, Obara, Haruhiko, and Mawatari, Yasunori

Subjects
*COATING processes, *SURFACES (Technology), *SURFACE coatings, *LASERS, *PULSED laser deposition, *MICROSCOPY
Abstract

Stoichiometric YBa2Cu3O7-δ (YBCO) films were fabricated by pulsed laser deposition on deliberately miscut Al2O3 (1...102) buffered with CeO2. Atomic force microscopy observations demonstrated that 600 nm-thick YBCO films were microcrack-free. Characterization of the films revealed a porous morphology, consisting of interconnected islands and deep holes (pores). This feature is considered as one of the sources contributing to the strain-relieving mechanism responsible for the increase in film thickness without microcracking. We observed Tc = 90±0.5K, Jc(77.3K, 0 T) = 1.5 - 2.0 × 106 A/cm², and Jct(77.3 K, 0 T) ∼ 120 A/cm. In addition, this new approach, using the deliberately miscut sapphire as a substrate for YBCO, is also applicable to other kinds of deposition techniques. [ABSTRACT FROM AUTHOR]

Published
2005
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