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Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in the device channel by applying a combination of a back- and gate voltages. We report our results on an effective detuning of the energy levels in the quantum dots by varying the barrier gate voltages in combination with the back-gate voltage. Given the need and importance of scaling to larger numbers of qubits, we demonstrate here the feasibility of single-electron box sensors at the edge of the quantum dot array for effective charge sensing in different operation modes -- sensing charge transitions in a single- and double quantum dots forming the quantum dot array. We also report measurement results demonstrating bias triangle pair formation and precise control over coupled quantum dots with variations in the inter-dot barrier. The reported measurement results demonstrate the ability to control the formation and coupling of multiple quantum dots in a quantum dot array and to sense their charge state via a Single Electron Box sensor in a commercial process for the first time.

This paper presents a characterization of a two-qubit processor in a 6-quantum dot array in SiGe, from the perspective of its quantum information processing capabilities. The analysis includes randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography; all basic functionality required for universal quantum computation. In light of our efforts to combine spin qubits with integrated cryogenic electronics, we evaluate the qubits' performance metrics at 300mK and 740mK. The latter temperature lies within the realistic thermal budget for integrated cryogenic electronics, making it particularly relevant for assessing qubit performance in practical scenarios., Comment: 13 pages, 7 figures, 4 tables

In the context of ground robot navigation in unstructured hazardous environments, the coupling of efficient path planning with an adequate environment representation is a crucial topic in order to guarantee the robot safety while ensuring the accomplishment of its mission. This paper discusses the exploitation of an environment representation obtained via Gaussian process regression (GPR) for smooth path planning using gradient descent B\'ezier curve optimisation (BCO). A continuous differentiable GPR of the terrain traversability and obstacle distance is used to plan paths with a weighted A* discrete planner, a T-RRT sampling-based planner and BCO using A* or T-RRT computed paths as prior. Numerical experiments in procedurally generated 2D environments allowed to compare the paths planned by the described methods and highlight the benefits of the joint use of the GPR continuous representation and the BCO smooth path planning with these different priors.

We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the Eu-intercalation of graphene/Ni(111) restores the nearly freestanding dispersion of the $\pi\pi^\ast$ Dirac cones at the K point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu states. The interaction with the magnetic substrate results in a large spin-dependent gap in the Dirac cones with a topological nature characterized by a large Berry curvature, and a spin-polarized van Hove singularity, whose closeness to the Fermi level gives rise to a polaronic band., Comment: 6 pages, 4 figures

Bismuth produces different types of ordered superstructures on the InAs(100) surface, depending on the growth procedure and coverage. The (2x1) phase forms at completion of a Bi monolayer and consists of a uniformly oriented array of parallel lines of Bi dimers. Scanning tunneling and core level spectroscopies demonstrate its metallic character, in contrast with the semiconducting properties expected on the basis of the electron counting principle. The weak electronic coupling among neighboring lines gives rise to quasi one-dimensional Bi-derived bands with open contours at the Fermi level. Spin- and angle-resolved photoelectron spectroscopy reveals a giant Rashba splitting of these bands, in good agreement with ab-initio electronic structure calculations. The very high density of the dimer lines, the metallic and quasi one-dimensional band dispersion and the Rashba-like spin texture make the Bi/InAs(100)-(2x1) phase an intriguing system, where novel transport regimes can be studied., Comment: 4 figures, includes supplemental material file

A complex interplay between the crystal structure and electron behavior within borophene renders this material an intriguing 2D system with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which in turn inhibits the realization of potential borophene applications. In this multi-method study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nano-grating. The scattering of photoelectrons from this structural grating gives rise to the replication of electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature followed by their reassembly into a fresh atomically-thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provides a comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality., Comment: 12 pages, 5 figures, supporting information available

The Zhang-Rice (ZR) state is a strongly hybridized bound state formed by the transition metal and oxygen atoms. The spin-fluctuations within the ZR state are known to play an important role in high-$T_\mathrm{c}$ superconductivity in cuprates. Here, we employ a combination of angle-resolved photoemission spectroscopy (ARPES), X-ray photoemission spectroscopy (XPS), and {\it ab initio} embedded dynamical mean-field theory (eDMFT) to investigate the influence of magnetic ordering on the spectral characteristics of the valence band and Mn 2$p$ core-level in MnO (001) ultrathin films. Our results demonstrate that a complex spin-selective evolution of Mn 3$d$$-$O 2$p$ hybridization develops due to the long-range antiferromagnetic (AFM) ordering. This hybridization significantly alters the spectral shape and weight of the ZR state. Specifically, in the AFM phase, we observed the sharpening of the ZR state and band folding with the periodicity of the AFM unit cell of MnO(001). We also demonstrated a strong connection between the spectral evolution of the ZR state and the non-local screening channels of the photoexcited core holes. Further, our detailed temperature-dependent study reveals the presence of short-range antiferromagnetic correlations that exist at much higher temperatures than $T_\mathrm{N}$. Such comprehensive studies showing the evolution of the ZR state across the magnetic transitions and its implication to the core-hole screening have never been reported in any 3$d$ binary transition metal oxides., Comment: 8 pages, 4 figures

Dimensionality can strongly influence the magnetic structure of solid systems. Here, we predict theoretically and confirm experimentally that the antiferromagnetic (AFM) ground state of bulk gadolinium germanide metalloxene, which has a quasi-layered defective GdGe$_2$ structure, is preserved in the ultrathin film limit. \textit{Ab initio} calculations demonstrate that ultrathin GdGe$_2$ films present in-plane intra-layer ferromagnetic coupling and AFM inter-layer coupling in the ground state. Angle-resolved photoemission spectroscopy finds the AFM-induced band splitting expected for the 2 and 3 GdGe$_2$ trilayer (TL) films, which disappear above the N\'eel temperature. The comparative analysis of isostructural ultrathin DyGe$_2$ and GdSi$_2$ films confirms the magnetic origin of the observed band splitting. These findings are in contrast with the recent report of ferromagnetism in ultrathin metalloxene films, which we ascribe to the presence of uncompensated magnetic moments., Comment: 9 pages, 4 figures

We present a non-reactive force field for molecular dynamics simulations of interfaces between passivated amorphous surfaces and their interaction with water. The force field enables large-scale dynamic simulations of dry and lubricated tribological contacts and is tailored to surfaces with hydrogen, hydroxyl and aromatic surface passivation. To favour its compatibility with existing force-field parameterizations for liquids and allow a straightforward extension to other types of surface passivation species, we adopt the commonly used OPLS functional form. The optimisation of the force-field parameters is systematic and follows a protocol that can be reused for other surface-molecule combinations. Reference data are calculated with gradient- and dispersion-corrected density functional theory and include the bonding structure and elastic deformation of bulk and surface structures as well as surface adhesion and water adsorption energy landscapes. The conventions adopted to define the different force-field atom types are based on the hybridisation of carbon orbitals and enable a simple and efficient parameter optimisation strategy based on quantum-mechanical calculations performed only on crystalline reference structures. Transferability tests on amorphous interfaces demonstrate the effectiveness of this approach. After testing the force field, we present two examples of application to tribological problems. Namely, we investigate relationships between dry friction and the corrugation of the contact potential energy surface and the dependency of friction on the thickness of interface water films. We finally discuss the limitations of the force field and propose strategies for its improvement and extension.

2D materials with high charge carrier mobility and tunable electronic band gaps have attracted intense research effort for their potential use as active components in nanoelectronics. 2D-conjugated polymers (2DCP) constitute a promising sub-class due to the fact that the electronic band structure can be manipulated by varying the molecular building blocks, while at the same time preserving the key features of 2D materials such as Dirac cones and high charge mobility. The major challenge for their use in technological applications is to fabricate mesoscale ordered 2DCP networks since current synthetic routes yield only small domains with a high density of defects. Here we demonstrate the synthesis of a mesoscale ordered 2DCP with semiconducting properties and Dirac cone structures via Ullmann coupling on Au(111). This material has been obtained by combining rigid azatriangulene precursors and a hot dosing approach which favours molecular diffusion and reduces the formation of voids in the network. These results open opportunities for the synthesis of 2DCP Dirac cone materials and their integration into devices., Comment: 21 pages, 3 figures

Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge monolayers angle-resolved photoemission spectroscopy reveals the presence of two-dimensional surface and film bands displaying energy-momentum dispersion compatible with the 5x4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface., Comment: 15 pages, 5 figures

The discovery of (4x4) silicene formation on Ag(111) raised the question on whether silicene maintains its Dirac fermion character, similar to graphene, on a supporting substrate. Previous photoemission studies indicated that the {\pi}-band forms Dirac cones near the Fermi energy, while theoretical investigations found it shifted at deeper binding energy. By means of angle-resolved photoemission spectroscopy and density functional theory calculations we show instead that the {\pi}-symmetry states lose their local character and the Dirac cone fades out. The formation of an interface state of free-electron-like Ag origin is found to account for spectral features that were theoretically and experimentally attributed to silicene bands of {\pi}-character., Comment: 14 pages, 4 figures

Silicene, the silicon equivalent of graphene, is attracting increasing scientific and technological attention in view of the exploitation of its exotic electronic properties. This novel material has been theoretically predicted to exist as a free-standing layer in a low-buckled, stable form, and can be synthesized by the deposition of Si on appropriate crystalline substrates. By employing low-energy electron diffraction and microscopy, we have studied the growth of Si on Ag(111) and observed a rich variety of rotationally non-equivalent silicene structures. Our results highlight a very complex formation diagram, reflecting the coexistence of different and nearly degenerate silicene phases, whose relative abundance can be controlled by varying the Si coverage and growth temperature. At variance with other studies, we find that the formation of single-phase silicene monolayers cannot be achieved on Ag(111).

The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic properties of Ni/Si interfaces utilizing X-ray magnetic circular dichroism (XMCD) spectroscopy at the Ni and Si edges have been studied. This approach allows to distinguish unambiguously the local magnetism on Ni and Si via individual core-level excitations. Two samples with different semiconductor dopings were investigated using both total electron yield (TEY) and reflectivity configurations. The experimental results uncovered magnetization at equilibrium in both the metallic layer and in the proximal layer of the semiconductor substrate, implying the presence of induced spin polarization in Si at equilibrium, possibly arising from the depletion layer region. These results hold significant value in the field of spintronics, as similar systems have been demonstrated to generate spin injection through optical medium, opening a new pathway for next generation nonvolatile high speed devices.

We investigate the behavior of amorphous silicon under hydrostatic compression using molecular simulations. During compression, amorphous silicon undergoes a discontinuous nonequilibrium transition from a low-density to a high-density structure at a pressure of around $13$-$16$~GPa. Ensemble-averaged density and elastic constants change discontinuously across the transition. Densification of individual glassy samples occurs through a series of discrete plastic events, each of which is accompanied by a vanishing shear modulus. This is the signature of a series of elastic instabilities, similar to shear transformation zones observed during shear yielding of glasses. We compare the structure obtained during compression with a near-equilibrium form of amorphous silicon obtained by quenching a melt at constant pressure. This gives structures identical to nonequilibrium compression at low and high pressure, but the transition between them occurs gradually rather than discontinuously. Our observations indicate that the polyamorphic transition is of a nonequilibrium nature, and it has the characteristics of a yield transition that occurs under compression instead of shear., Comment: 9 pages, 6 figures

Generally adopted design strategies for enhancing the photocatalytic activity are aimed at tuning properties such as the visible light response, the exposed crystal facets, and the nanocrystal shape. Here, we present a different approach for designing efficient photocatalysts displaying a substrate-specific reactivity upon defect engineering. The defective anisotropic brookite TiO2 photocatalyst functionalized with Pt nanocrystals are tested for alcohol photoreforming showing up to an 11-fold increase in methanol oxidation rate, compared to the unreduced one, whilst presenting much lower ethanol or isopropanol specific oxidation rates. We demonstrate that the alcohol oxidation and hydrogen evolution reactions are tightly related, and when the substrate-specific alcohol oxidation ability is increased, the hydrogen evolution is significantly boosted. The reduced anisotropic brookite shows up to twenty-six-fold higher specific photoactivity with respect to anatase and brookite with isotropic nanocrystals, reflecting the different type of defective catalytic sites formed depending on the TiO2 polymorph and its crystal shape. Advanced in-situ characterizations and theoretical investigations reveal that controlled engineering over oxygen vacancies and lattice strain produces large electron polarons hosting the substrate-specific active sites for alcohol photo-oxidation.

This paper introduces an Online Localisation and Colored Mesh Reconstruction (OLCMR) ROS perception architecture for ground exploration robots aiming to perform robust Simultaneous Localisation And Mapping (SLAM) in challenging unknown environments and provide an associated colored 3D mesh representation in real time. It is intended to be used by a remote human operator to easily visualise the mapped environment during or after the mission or as a development base for further researches in the field of exploration robotics. The architecture is mainly composed of carefully-selected open-source ROS implementations of a LiDAR-based SLAM algorithm alongside a colored surface reconstruction procedure using a point cloud and RGB camera images projected into the 3D space. The overall performances are evaluated on the Newer College handheld LiDAR-Vision reference dataset and on two experimental trajectories gathered on board of representative wheeled robots in respectively urban and countryside outdoor environments. Index Terms: Field Robots, Mapping, SLAM, Colored Surface Reconstruction

Uncertainty estimation in deep learning has become a leading research field in medical image analysis due to the need for safe utilisation of AI algorithms in clinical practice. Most approaches for uncertainty estimation require sampling the network weights multiple times during testing or training multiple networks. This leads to higher training and testing costs in terms of time and computational resources. In this paper, we propose Layer Ensembles, a novel uncertainty estimation method that uses a single network and requires only a single pass to estimate predictive uncertainty of a network. Moreover, we introduce an image-level uncertainty metric, which is more beneficial for segmentation tasks compared to the commonly used pixel-wise metrics such as entropy and variance. We evaluate our approach on 2D and 3D, binary and multi-class medical image segmentation tasks. Our method shows competitive results with state-of-the-art Deep Ensembles, requiring only a single network and a single pass.

Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-freestanding graphene on the cobalt (0001) surface. The absence of graphene band hybridization with the substrate, the doping contribution well represented by a rigid energy shift and the excellent electron-electron interaction screening ensured by the metallic substrate offer a privileged point of view for such investigation. A clear ARPES signal is detected along the M point of the graphene Brillouin zone, giving rise to an apparent flattened band. By simulating the graphene spectral function from the density functional theory calculated bands, we demonstrate that the photoemission signal along the M point originates from the "shadow" of the spectral function of the unoccupied band above the Fermi level. Such interpretation put forward the absence of any additional strong correlation effects at the VHS proximity, reconciling the mean field description of the graphene band structure even in the highly doped scenario.

Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes and tailored metal-semiconductor interfaces. Here, by means of free electron laser-based element sensitive Kerr spectroscopy, we report direct experimental evidence of spin currents across a Ni/Si interface in the form of different magnetodynamics at the Ni M2,3 and Si L2,3 absorption edges. This further allows us to calculate the propagation velocity of the spin current in silicon, which is on the order of 0.2 nm/fs.

Coupling among conduction electrons (e.g. Zhang-Rice singlet) are often manifested in the core level spectra of exotic materials such as cuprate superconductors, manganites, etc. These states are believed to play key roles in the ground state properties and appear as low binding energy features. To explore such possibilities in the Fe-based systems, we study the core level spectra of a superconductor, CaFe$_{1.9}$Co$_{0.1}$As$_2$ (CaCo122) in the CaFe$_2$As$_2$ (Ca122) family employing high-resolution hard $x$-ray photoemission spectroscopy. While As core levels show almost no change with doping and cooling, Ca 2$p$ peak of CaCo122 show reduced surface contribution relative to Ca122 and a gradual shift of the peak position towards lower binding energies with cooling. In addition, we discover emergence of a feature at lower binding energy side of the well screened Fe 2$p$ signal in CaCo122. The intensity of this feature grows with cooling and indicate additional channels to screen the core holes. The evolution of this feature in the superconducting composition and it's absence in the parent compound suggests relevance of the underlying interactions in the ground state properties of this class of materials. These results reveal a new dimension in the studies of Fe-based superconductors and the importance of such states in the unconventional superconductivity in general.

We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the ground state of this surface, which is expected to be metallic in a band picture because of the odd number of electrons per unit cell. Our differential conductance spectra instead show the opening of an energy gap at the Fermi level and a significant temperature dependence of the electronic properties, especially for the adatoms at the center of the unfaulted half of the unit cell. Complementary photoemission spectra with improved correction of the surface photovoltage shift corroborate the differential conductance data and demonstrate the absence of surface bands crossing the Fermi level at 17 K. These consistent experimental observations point to an insulating ground state and contradict the prediction of a metallic surface obtained by density functional theory in the generalized gradient approximation. The calculations indicate that this surface has or is near a magnetic instability, but remains metallic in the magnetic phases even including correlation effects at mean-field level. We discuss possible origins of the observed discrepancies between experiments and calculations.

The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however, requires elaborate pre-epitaxy processes for substrate patterning. Our molecular dynamics simulations reveal that homoepitaxial silicon nanofilms can be directly deposited by a crystalline silicon tip rubbing against the substrate, thus enabling geometrically controlled crystal growth with no need for substrate pre-patterning. We name this solid-phase epitaxial growth triboepitaxy as it solely relies on shear-induced amorphization and recrystallization that occur even at low temperature at the sliding interface between two silicon crystals. The interplay between the two concomitant, shear-induced processes is responsible for the formation of an amorphous sliding interface with constant nanometric thickness. If the two elastically anisotropic crystals slide along different crystallographic orientations, the amorphous layer can move unidirectionally perpendicular to the sliding plane, causing the crystal with lowest elastic energy per atom to grow at the expenses of the other crystal. As triboepitaxial growth is governed by the shear elastic response of the two crystals along the sliding direction, it can be implemented as a mechanical scanning-probe lithography method in which epitaxial growth is controlled by tuning the crystallographic misorientation between tip and substrate, the tip's size or the normal force. These results suggest a radically new way to conceive nanofabrication techniques that are based on tribologically induced materials transformations., Comment: 35 pages, 13 figures, 1 table