Search

This study presents, experimentally, similarity and Froude number similitude (FNS) in the dimensionless features of two solitary waves propagating over a horizontal bed, using two wave gauges and a high-speed particle image velocimetry (HSPIV). The two waves have distinct wave heights H0 (2.9 and 5.8 cm) and still water depths h0 (8.0 and 16.0 cm) but identical H0/h0 (0.363). Together with the geometric features of free surface elevation and wavelength, the kinematic characteristics of horizontal and vertical velocities, as well as wave celerity, are elucidated. Illustration of the hydrodynamic features of local and convective accelerations are also made in this study. Both similarity and FNS hold true for the dimensionless free surface elevation (FSE), wavelength and celerity, horizontal and vertical velocities, and local and convective accelerations in the horizontal and vertical directions. The similarities and FNSs indicate that gravity dominates and governs the wave kinematics and hydrodynamics.

This paper describes a four-layer-stacked chip with 45-nm dynamic random access memory (DRAM) dice and 65-nm logic controller, which are interconnected by backside-via-last through-silicon via (TSV) processes. Fabrication of backside-via-last process and multiple die stacking using chip-to-chip bonding are presented with electrical connection between TSV (5- $\mu \text{m}$ -diameter/50- $\mu \text{m}$ -length) and Cu interconnects. Excellent fabrication of stacked dice verified that the micro bumps with 12- $\mu \text{m}$ diameter are bonded using three step temperature bonding profile. Further stacked DRAM/Logic performance and system verifications are demonstrated successfully using 3-D heterogeneous integration.

The hydrodynamic characteristics, including local and convective accelerations as well as pressure gradient in the horizontal direction, of the external stream of an undular bore propagating on a 1:20 sloping beach are experimentally studied. A bore with the water depth ratio of 1.70 was generated downstream of a suddenly lifted gate. A high-speed particle image velocimetry was employed to measure the velocity fields during the run-up and run-down motions. The time series of free surface elevation and velocity field/profile of the generated bore, comprising a pure bore accompanied by a series of dispersive leading waves, are first demonstrated. Based on the fast Fourier transform (FFT) and inverse FFT (IFFT) techniques, the free surface elevation of leading waves and the counterpart of pure bore are acquired separately at a specified measuring section (SMS), together with the uniform horizontal velocity of the pure bore. The effect of leading-wave-induced velocity shift on the velocity profiles of the generated bore are then evaluated at the SMS. To understand the calculation procedure of accelerations and pressure gradient, three tabulated forms are provided as illustrative examples. Accordingly, the relationships among the partially depth-averaged values of the non-dimensional local acceleration, convective acceleration, total acceleration and pressure gradient of the generated/pure bore acquired at the SMS versus the non-dimensional time are elucidated. The trends in the non-dimensional accelerations and pressure gradient of the external stream of generated bore are compared with those of the pure bore. During the run-up motion from the instant of arrival of the bore front to the moment of the peak level at the SMS, continuous decrease in the onshore uniform horizontal velocity, and successive deceleration of the pure bore in the onshore direction are evidenced, exhibiting the pure bore under the adverse pressure gradient with decreasing magnitude. However, the pure bore once ridden by the leading waves is decelerated/accelerated spatially and accelerated/decelerated temporally in the onshore direction during the rising/descending free surface of each leading wave. This fact highlights the effect of pre-passing/post-passing of the leading wave crest on the velocity distribution of generated bore. It is also found that, although the leading waves have minor contribution on the power spectrum of the free surface elevation as compared with that of the pure bore, the leading waves do play an important role on the magnitudes of both accelerations and pressure gradient. The largest magnitude of the acceleration contributed by the leading waves is around 26 times the counterpart contributed by the pure bore. Further, during the run-down motion right after the moment for the peak level of the bore, a linear increase in the magnitude of the offshore uniform horizontal velocity and a constant local acceleration with increasing time are both identified. The partially depth-averaged value of the non-dimensional pressure gradient is equal to a small negative constant (&minus, 0.0115) in the offshore direction, indicating that the bore is subject to a constant favorable pressure gradient.

An experimental results on the spatio-temporal variation of velocity field and vortex structure, generated from the separated boundary layers on the offshore side of the still-water shoreline, during the run-down process of non-breaking solitary waves over a 1:3 sloping beach are presented. Three waves having the incident wave-height to water-depth ratios (H0/h0) of 0.363, 0.263, and 0.171 were generated in a wave flume. Two flow visualization techniques and high-speed particle image velocimetry were employed. The primary topics and new findings are: (1) Mechanism of the incipient flow separation, accompanied by formation of the separated shear layer from the beach surface, is elucidated under the adverse pressure gradient, using the fine data of velocity measurements very close to the sloping boundary. (2) Occurrence of hydraulic jump subsequently followed by development of the tongue-shaped free surface and projecting jet is demonstrated through spatio-temporal variation in the Froude number. It is confirmed by a change in the Froude number from supercritical to subcritical range as the free surface rapidly rises from the onshore to offshore side. (3) A complete evolution of the primary vortex structure (including the core position, vortex size, and velocity distribution passing through the vortex core) is first introduced systematically, together with the illustration of temporal variation in the topological structure. The non-dimensional shoreward distance of the vortex core section decreases with the increase in the non-dimensional time. However, the non-dimensional size height of the primary vortex increases with increasing non-dimensional time. (4) Two universal similarity profiles for both the wall jet flow and the shear layer flow demonstrate independency of the two similarity profiles of the wave-height to water-depth ratio and the beach slope. The similarity profiles indicate the promising collapse of the data from three previous studies for 1:20, 1:10, and 1:5 sloping beaches.

The characteristics of horizontal velocity in the bottom boundary-layer flow induced by a solitary wave propagating over a horizontal bottom are presented experimentally, using high-speed particle image velocimetry (HSPIV). The ratio of wave height to water depth varies from 0.096 to 0.386 and the flow inside the boundary layer is laminar. The results show that the horizontal velocity profiles can be mainly classified into two categories with respect to the passing of the solitary wave-crest at the measuring section: the pre-passing (or acceleration) phases under favorable pressure gradient and post-passing (or deceleration) phases under adverse pressure gradient. For the velocity distributions obtained during the pre-passing phases, a nonlinear regression analysis was used to precisely determine the time-dependent characteristic length and velocity scales underlying these profiles. A similarity profile of the horizontal velocity is established first using the time-dependent free-stream velocity and boundary layer thickness as the characteristic velocity and length scales, respectively. In addition, the displacement thickness, the momentum thickness, and the energy thickness are also considered as alternative length scales. All these four representative thicknesses are closely related to each other, demonstrating that any one amongst them can be regarded as the characteristic length scale. The forms of similarity profiles for the non-dimensional velocity distributions are somewhat analogous to the results of steady boundary layer flow over a thin plate under with pressure gradient, but with different coefficients or powers. While during the post-passing phases, flow reversal which acts like an unsteady wall jet and moves in the opposite direction against the wave propagation occurs after the passage of solitary wave-crest. The thickness of flow reversal layer increases with time. A similarity profile is proposed for the velocity distributions corresponding to occurrence of the extreme value in the maximum negative velocity of flow reversal. Variations of the maximum negative velocity and the thickness of flow reversal with the time right after the start of flow reversal are also discussed in detail. Moreover, the non-dimensional time leads of the horizontal velocities at different heights in the boundary layer over the free-stream velocity are evidenced to be more noticeable toward the bottom, and also in lower ratio of wave height to water depth. A similarity profile for the non-dimensional time lead versus the non-dimensional height above the bottom surface is also presented.

Memristor devices are promising as high-density computing logic for non-high-speed normally off applications using heterogeneous technologies. This brief proposes a set-triggered-parallel-reset memristor logic (STPR-ML)-based on back-end-of-line-based bipolar-type memristor devices to reduce the area overhead and increase compatibility with standard and nonstandard CMOS processes. The proposed STPR-ML has two subsets: with and without nonvolatile storage capability. Two types of physical structures are also proposed for STPR-ML: 2-D and 3-D. A test chip using 2-D $\hbox{HfO}_{x}$ memristor devices was fabricated using a CMOS process to confirm the functionality of the nand , nor , and xor gates used in STPR-ML. The proposed STPR-ML achieves a $2\sim 8\times$ reduction in area compared with CMOS logic gates with four or more inputs.

In this investigation, a system-in-package (SiP) that consists of a very low-cost interposer with through-silicon holes (TSHs) and with chips on its top and bottom sides (a real 3-D IC integration) is studied. Emphasis is placed on the fabrication of a test vehicle to demonstrate the feasibility of this SiP technology. The design, materials, and process of the top chip, bottom chip, TSH interposer, and final assembly will be presented. Shock and thermal cycling tests will be performed to demonstrate the integrity of the SiP structure.

In this study, the authors propose non-conventional phase-change memory programming schemes using a comprehensive model, which integrates the underlying electrical and thermal theories. Various pulsing schemes aiming to reduce operation power without compromising performance are assessed based on a calibrated model. Our results suggest that optimisation of power consumption can be done simply by design of pulsing techniques.

Novel cell structures based on one transistor and two uneven magnetic tunnel junction cell and pillar write word line architecture are proposed to shrink the bit size with a potential down to 6 F2 by a so-called extended via process, and to reduce the writing current by a factor of 2, combined with the nature of nonvolatility and high speed, making the magnetoresistive random access memory suitable for universal memory applications

The capping effects on the properties of magnetic tunneling junctions (MTJs) have been investigated to improve the magnetoresistive (MR) ratio [Nagamine , Applied Physics, vol. 99, p. 08K703, 2006] and thermal stability [Fukumoto , Japanese Journal of Applied Physics, vol. 45, p. 3829, 2006. In this paper, MgO/Mg and MgO capping layers for MTJs were used to replace our previously used Ta and Ru capping layer [Yen , IEEE Transactions on Magnetics, vol. 42, no. 10, p. 862, 2004]. The MTJs with NiFe and CoFeB free layers were patterned to ellipses of 0.36 mum times 0.72 mum. The MR ratios of the MTJs with an NiFe free layer were enhanced from 26% to about 33% by capping MgO/Mg bilayers. A great improvement was also found on the MTJs with the CoFeB free layer, where the MR ratio was 50.4% with the MgO cap layer enhanced from 44.7% of Ru-capped MTJs. In addition, the influences of those capping layers included Ta, Ru, MgO, and MgO/Mg on thermal stability were also discussed

Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaOx/W structure with a Ti nanolayer at the Cu/TaOx interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and formation of a defective high-κ TaOx film were confirmed by high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and X-ray photo-electron spectroscopy. The resistive switching memory characteristics of the Al/Cu/Ti/TaOx/W structure, such as HRS/LRS (approximately 104), stable switching cycle stability (>106) and multi-level operation, were improved compared with those of Al/Cu/TaOx/W devices. These results were attributed to the control of Cu migration/dissolution by the insertion of a Ti nanolayer at the Cu/TaOx interface. In contrast, CuOx formation at the Cu/TaOx interface was observed in an Al/Cu/TaOx/W structure, which hindered dissolution of the Cu filament and resulted in a small resistance ratio of approximately 10 at a CC of 500 μA. A high charge-trapping density of 6.9 × 1016 /cm2 was observed in the Al/Cu/Ti/TaOx/W structure from capacitance-voltage hysteresis characteristics, indicating the migration of Cu ions through defect sites. The switching mechanism was successfully explained for structures with and without the Ti nanolayer. By using a new approach, the nanoscale diameter of Cu filament decreased from 10.4 to 0.17 nm as the CC decreased from 500 to 0.1 μA, resulting in a large memory size of 7.6 T to 28 Pbit/sq in. Extrapolated 10-year data retention of the Ti nanolayer device was also obtained. The findings of this study will not only improve resistive switching memory performance but also aid future design of nanoscale nonvolatile memory.

The characteristics of flow fields for a complete evolution of the non-breaking solitary wave, having a wave-height to water-depth ratio of 0.363 and propagating over a 1:5 sloping bottom, are investigated experimentally. This study mainly focuses on the occurrences of both flow separation on the boundary layer under an adverse pressure gradient and subsequent hydraulic jump with the abrupt rising of free surface during rundown motion of the shoaling wave, together with emphasis on the evolution of vortex structures underlying the separated shear layer and hydraulic jump. A flow visualization technique with particle trajectory method and a high-speed particle image velocimetry (HSPIV) system with a high-speed digital camera were used. Based on the instantaneous flow images visualized and/or the ensemble-averaged velocity fields measured, the following interesting features, which are unknown up-to-date, are presented and discussed in this study: (1) Flow bifurcation occurring on both offshore and onshore sides of the explicit demarcation curve and the stagnation point during runup motion; (2) The dependence of the diffuser-like flow field, being changed from the supercritical flow in the shallower region to the subcritical flow in the deeper counterpart, on the Froude number during the early and middle stages of rundown motion; (3) The positions and times for the occurrences of the incipient flow separation and the sudden rising of free surface of the hydraulic jump; (4) The associated movement and evolution of vortex structures under the separated shear layer, the hydraulic jump and/or the high-speed external main stream of the retreated flow; and (5) The entrainment of air bubbles from the free surface into the external main stream of the retreated flow.

Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 nm in diameter of the IrOx nano-dots (NDs) have been observed by high-resolution transmission electron microscopy. The IrOx-NDs, Al2O3, and WOx layers are confirmed by X-ray photo-electron spectroscopy. Capacitance-voltage hysteresis characteristics show higher charge-trapping density in the IrOx-ND memory as compared to the pure Al2O3 devices. This suggests that the IrOx-ND device has more defect sites than that of the pure Al2O3 devices. Stable resistive switching characteristics under positive formation polarity on the IrOx electrode are observed, and the conducting filament is controlled by oxygen ion migration toward the Al2O3/IrOx top electrode interface. The switching mechanism is explained schematically based on our resistive switching parameters. The resistive switching random access memory (ReRAM) devices under positive formation polarity have an applicable resistance ratio of > 10 after extrapolation of 10 years data retention at 85°C and a long read endurance of 105 cycles. A large memory size of > 60 Tbit/sq in. can be realized in future for ReRAM device application. This study is not only important for improving the resistive switching memory performance but also help design other nanoscale high-density nonvolatile memory in future.

not Available.