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In magnetron sputtering, only a fraction of the sputtered target material leaving the ionization region is directed toward the substrate. This fraction may be different for ions and neutrals of the target material as the neutrals and ions can exhibit a different spread as they travel from the target surface toward the substrate. This difference can be significant in high power impulse magnetron sputtering (HiPIMS) where a substantial fraction of the sputtered material is known to be ionized. Geometrical factors or transport parameters that account for the loss of produced film-forming species to the chamber walls are needed for experimental characterization and modeling of the magnetron sputtering discharge. Here, we experimentally determine transport parameters for ions and neutral atoms in a HiPIMS discharge with a titanium target for various magnet configurations. Transport parameters are determined to a typical substrate, with the same diameter (100 mm) as the cathode target, and located at a distance 70 mm from the target surface. As the magnet configuration and/or the discharge current are changed, the transport parameter for neutral atoms ξ tn remains roughly the same, while transport parameters for ions ξ ti vary greatly. Furthermore, the relative ion-to-neutral transport factors, ξ ti / ξ tn , that describe the relative deposited fractions of target material ions and neutrals onto the substrate, are determined to be in the range from 0.4 to 1.1. [ABSTRACT FROM AUTHOR]

Multifluid two-dimensional model was developed to describe the plasma kinetics of the direct current Ar/O2 magnetron, coupling two modules: charged particles and neutrals. The first module deals with three positive ions—Ar+, O2+, and O+—and two negative species—e- and O-—treated by the moments of Boltzmann’s equation. The second one follows seven neutral species (Ar, O2, O, O3, and related metastables) by the multicomponent diffusion technique. The two modules are self-consistently coupled by the mass conservation and kinetic coefficients taking into account more than 100 volume reactions. The steady state is obtained when the overall convergence is achieved. Calculations for 10% O2 in Ar/O2 mixture at 2.67 and 4 Pa show that the oxygen excited species are mainly created by electron collisions in the negative glow of the discharge. Decreasing the pressure down to 0.67 Pa, the model reveals the nonlocal behavior of the reactive species. The density gradient of O2 ground state is reversed with respect to all gradients of the other reactive species, since the latter ones originate from the molecular ground state of oxygen. It is also found that the wall reactions drastically modify the space gradient of neutral reactive species, at least as much as the pressure, even if the discharge operates in compound mode. [ABSTRACT FROM AUTHOR]

This work presents the changes induced at the nanometer scale by the nitrogen incorporation into amorphous carbon nitride a-CNx films deposited by radio-frequency (r.f.) magnetron sputtering. High N content films (20 to 33 at.%) have been analysed by electron energy loss spectroscopy (EELS) and by near edge X-ray absorption fine structure (NEXAFS). EELS spectra at C K and N K edges roughly indicate the increase of the corresponding π* features, associated to N sp2 and C sp2 bonds, vs. the N content. Fine structures of the π* region of the N K edge spectra show at least three contributions, with different evolution depending on the N content. The discrepancies between the results recorded by these two techniques are only outward and they can be explained by the influence of the plasma parameters (pressure lying from 0.5 to 13 Pa and various Ar/N2 mixtures) on the deposition process. All the results are in good agreement with the XPS analysis of the N 1s data. [Copyright &y& Elsevier]

Thin and ultrathin carbon films reduce the laser energy required for copper powder fusion in selective laser melting (SLM). The low absorption of infrared (IR) radiation and its excellent thermal conductivity leads to an intricate combination of processing parameters to obtain high-quality printed parts in SLM. Two carbon-based sacrificial thin films were deposited onto copper to facilitate light absorption into the copper substrates. Graphite-like (3.5 µm) and ultra-thin (25 nm) amorphous carbon films were deposited by aerosol spraying and direct current magnetron sputtering, respectively. The melting was analyzed for several IR (1.06 µm) laser powers in order to observe the coating influence on the energy absorption. Scanning electron microscopy showed the topography and cross-section of the thermally affected area, electron backscatter diffraction provided the surface chemical composition of the films, and glow-discharge optical emission spectroscopy (GDOES) allowed the tracking of the in-deep chemical composition of the 3D printed parts using carbon film-covered copper. Ultra-thin films of a few tens of nanometers could reduce fusion energy by about 40%, enhanced by interferences phenomena. Despite the lower energy required, the melting maintained good quality and high wettability when using top carbon coatings. A copper part was SLM printed and associated with 25 nm of carbon deposition between two copper layers. The chemical composition analysis demonstrated that the carbon was intrinsically removed during the fusion process, preserving the high purity of the copper part.

The electron emission by micro-protrusions has been studied for over a century, but the complete explanation of the unstable behaviors and their origin remains an open issue. These systems often evolve towards vacuum breakdown, which makes experimental studies of instabilities very difficult. Modeling studies are therefore necessary. In our model, refractory metals have shown the most striking results for discontinuities or jumps recorded on the electron emitted current under high applied voltages. Herein, we provide evidence on the mechanisms responsible for the initiation of a thermal instability during the field emission from refractory metal micro-protrusions. A jump in the emission current at steady state is found beyond a threshold electric field, and it is correlated to a similar jump in temperature. These jumps are related to a transient runaway of the resistive heating that occurs after the Nottingham flux inversion. That causes the hottest region to move beneath the apex, and generates an emerging heat reflux towards the emitting surface. Two additional conditions are required to initiate the runaway. The emitter geometry must ensure a large emission area and the thermal conductivity must be high enough at high temperatures so that the heat reflux can significantly compete with the heat diffusion towards the thermostat. The whole phenomenon, that we propose to call the Nottingham Inversion Instability, can explain unexpected thermal failures and breakdowns observed with field emitters., (© 2021. The Author(s).)

X-ray gas attenuators act as stress-free high-pass filters for synchrotron and free-electron laser beamlines to reduce the heat load in downstream optical elements without affecting other properties of the X-ray beam. The absorption of the X-ray beam triggers a cascade of processes that ionize and heat up the gas locally, changing its density and therefore the X-ray absorption. Aiming to understand and predict the behaviour of the gas attenuator in terms of efficiency versus gas pressure, a hybrid model has been developed, combining three approaches: an analytical description of the X-ray absorption; Monte Carlo for the electron thermalization; and a fluid treatment for the electron diffusion, recombination and excited-states relaxation. The model was applied to an argon-filled attenuator prototype built and tested at the European Synchrotron Radiation Facility, at a pressure of 200 mbar and assuming stationary conditions. The results of the model showed that the electron population thermalizes within a few nanoseconds after the X-ray pulse arrival and it occurs just around the X-ray beam path, recombining in the bulk of the gas rather than diffusing to the attenuator walls. The gas temperature along the beam path reached 850 K for 770 W of incident power and 182 W m -1 of absorbed power. Around 70% of the absorbed power is released as visible and UV radiation rather than as heat to the gas. Comparison of the power absorption with the experiment showed an overall agreement both with the plasma radial profile and power absorption trend, the latter within an error smaller than 20%. This model can be used for the design and operation of synchrotron gas attenuators and as a base for a time-dependent model for free-electron laser attenuators.

We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high power impulse magnetron sputtering (HiPIMS) and substrate biasing. For a direct current (DC) substrate bias voltage of -130 V, Cu/Si heteroepitaxial growth is achieved by HiPIMS following the Cu(001) [100]//Si(001) [110] orientation, while under the same average deposition conditions, but using conventional DC magnetron sputtering, polycrystalline Cu films with [111] preferred orientation are deposited. In addition, the intrinsic stress has been measured in situ during growth by real-time monitoring of the wafer curvature. For this particular HiPIMS case, the stress is slightly compressive (-0.1 GPa), but almost fully relaxes after growth is terminated. As a result of epitaxy, the Cu surface morphology exhibits a regular pattern consisting of square-shaped mounds with a lateral size of typically 150 nm. For all samples, X-ray diffraction pole figures and scanning/transmission electron microscopy reveal the formation of extensive twinning of the Cu {111} planes.