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Metal-halide perovskites feature very low deep-defect densities, thereby enabling high operating voltages at the solar cell level. Here, by precise extraction of their absorption spectra, we find t...

The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult&mdash, as is the case of graphene on noncatalytic substrates such as Si&mdash, inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.

Plasmon-enhanced absorption, often considered as a promising solution for efficient light trapping in thin film silicon solar cells, suffers from pronounced optical losses i.e. parasitic absorption, which do not contribute to the obtainable photocurrent. Direct measurements of such losses are therefore essential to optimize the design of plasmonic nanostructures and supporting layers. Importantly, contributions of useful and parasitic absorption cannot be measured separately with commonly used optical spectrophotometry. In this study we apply a novel strategy consisting in a combination of photocurrent and photothermal spectroscopic techniques to experimentally quantify the trade-off between useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating self-assembled silver nanoparticle arrays located at their rear side. The highly sensitive photothermal technique accounts for all absorption processes that result in a generation of heat i.e. total absorption while the photocurrent spectroscopy accounts only for the photons absorbed in the μc-Si:H layer which generate photocarriers i.e. useful absorption [1]. We demonstrate that for 0.9 μm thick μc-Si:H film the optical losses resulting from the plasmonic light trapping are insignificant below 730 nm, above which they increase rapidly with increasing illumination wavelength. For the films deposited on nanoparticle arrays coupled with a flat silver mirror (plasmonic back reflector), we achieved a significant broadband enhancement of the useful absorption resulting from both surface texturing and plasmonic scattering, and achieving 91% of the theoretical Lambertian limit of absorption. [1] S. Morawiec et al. Experimental Quantification of Useful and Parasitic Absorption of Light in Plasmon-Enhanced Thin Silicon Films for Solar Cells Application. Scientific Reports 6 (2016)

KLuS2 single crystal samples undoped and doped with a low (5 %) or high (38 %) concentration of trivalent thulium or ytterbium ions were synthesized in the form of thin hexagonal plates. The low phonon energy ( ∼ 220 cm−1) was confirmed using Raman spectroscopy. Samples were studied also by using optical absorption and emission as well as electron paramagnetic resonance spectroscopy and the observed spectral features are discussed. In particular, the 5 % Yb doped samples demonstrate homogeneous dopant distribution inside the material over the lutetium sites. No other signals either from potassium site or the exchange coupled ions were detected. For infrared transitions the luminescence kinetic was determined. Significantly broad infrared emission bands (at 1.4, 1.8 and 2.3 μm for Tm3+, 1 μm for Yb3+) and long decay times (e.g. 0.4 ms from 3H4 to 19 ms from 3F4 levels of Tm3+, 1.4 ms from 2F5/2 level of Yb3+) make those materials perspective for future laser development.

In this paper we present a comparison of three different methods that can be used for estimating the stiffness of qPlus sensors. The first method is based on continuum theory of elasticity. The second (Cleveland’s method) uses the change in the eigenfrequency that is induced by the loading of small masses. Finally, the stiffness is obtained by analysis of the thermal noise spectrum. We show that all three methods give very similar results. Surprisingly, neither the gold wire nor the gluing give rise to significant changes of the stiffness in the case of our home-built sensors. Furthermore we describe a fast and cost-effective way to perform Cleveland’s method. This method is based on gluing small pieces of a tungsten wire; the mass is obtained from the volume of the wire, which is measured by optical microscopy. To facilitate detection of oscillation eigenfrequencies under ambient conditions, we designed and built a device for testing qPlus sensors.

A combination of photocurrent and photothermal spectroscopic techniques is applied to experimentally quantify the useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating optimized metal nanoparticle arrays, located at the rear surface, for improved light trapping via resonant plasmonic scattering. The photothermal technique accounts for the total absorptance and the photocurrent signal accounts only for the photons absorbed in the μc-Si:H layer (useful absorptance); therefore, the method allows for independent quantification of the useful and parasitic absorptance of the plasmonic (or any other) light trapping structure. We demonstrate that with a 0.9 μm thick absorber layer the optical losses related to the plasmonic light trapping in the whole structure are insignificant below 730 nm, above which they increase rapidly with increasing illumination wavelength. An average useful absorption of 43% and an average parasitic absorption of 19% over 400–1100 nm wavelength range is measured for μc-Si:H films deposited on optimized self-assembled Ag nanoparticles coupled with a flat mirror (plasmonic back reflector). For this sample, we demonstrate a significant broadband enhancement of the useful absorption resulting in the achievement of 91% of the maximum theoretical Lambertian limit of absorption.

Electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films deposited on silicon in sub-100 nm thickness and with intentionally high relative sp2 phase ratio (60%) is characterized on a microscopic level. By correlating Kelvin Force Microscopy, Current-Sensing Atomic Force Microscopy, micro-Raman spectroscopy and cross-sectional Scanning Electron Microscopy data we show that the charging is determined by both the surface topography (grains and grain boundaries) and complex sub-surface morphology (arrangement of grains and sp2 phase) on scales below 2 × 2 μm2. These microscopic data and macroscopic I(V) characteristics evidence that sp2 phase dominates over diamond grains in local electrostatic charging of NCD thin films. Moreover, the tip-surface junction quality is identified as the main factor behind large variations (0.1 to 1 V) of the overall induced electrostatic charge contrast.

We investigate the role of fetal bovine serum (FBS) proteins in the assembly of osteoblastic cells (SAOS-2) in McCoy's 5A medium on synthetic monocrystalline and nanocrystalline diamonds having H- and O-terminated array patterns. We characterize i) adhesion of proteins and cells to diamond by shaking experiments (1000 rpm), fluorescence, and atomic force microscopy, ii) distribution of FBS proteins by micro-Raman spectroscopy, and iii) influence of pre-adsorbed specific FBS proteins (albumin, fibronectin, vitronectin) on the cell assembly. There is 40% lower adhesion of cells on H-terminated diamond with adsorbed FBS compared to this surface without FBS as well as to O-terminated surfaces. Spatially resolved Raman spectroscopy of C―H stretching bands around 2900 cm− 1 showed uniform coverage of H/O-diamond by the albumin in more than 50 nm thick FBS layers. The other FBS proteins were not detectable by Raman. Pre-adsorption of the specific proteins prior to cell plating indicated that the cell preference to O-terminated diamond is controlled by the fibronectin rather than by the albumin. We discuss the data with a view to the cell preferential assembly on H/O-diamond micro-arrays.

Here, the authors demonstrate the fabrication of silicon nanowire array based solar cells consisting of crystalline Si cores and amorphous a-Si:H layers using a single pump-down plasma-enhanced chemical vapor deposition (PECVD) process. The authors investigate the influence of geometry, physical dimensions, and doping of the nanowire arrays on the solar cell performance. The authors show that the length and thickness of the nanowire radial NIP junction have a significant influence on the current density–voltage characteristics and external quantum efficiency of the cells. The efficiency of radial solar cells is found to be mainly driven by the photogenerated current which is the largest when the thickness of the absorber film is approximately one half of the NIP nanowire length. Doping of the nanowires done by adding phosphine gas in situ in the PECVD growth has affected both the axial and radial nanowire growth rate, leading to the nanowire growth reduction in both directions at higher doping concentrati...

Thin film of polypyrrole is electrochemically deposited on hydrogen terminated surface of intrinsic diamond exhibiting surface conductivity (5 × 10 − 5 S/□). Based on a high bonding strength (40 nN) estimated by AFM-scratching experiments and local changes of surface work function detected by Kelvin force microscopy we suggest that the polypyrrole is covalently attached to the diamond surface via carbon–carbon bond while replacing the hydrogen termination. Electronic measurements show loss of surface conductivity of diamond after the polypyrrole deposition. These results are discussed in terms of electronic and electrochemical properties of polypyrrole–diamond system also in the perspective of its potential device applications.

Charge transfer in polypyrrole–diamond system is studied by conductivity measurements of a channel made of H-terminated diamond in the dark and under illumination. Micrometer-sized channels of conductive hydrogen-terminated diamond are lithographically fabricated on the surface of monocrystalline intrinsic diamond crystal by selective oxygen plasma treatment. The channels are interrupted by electrochemically synthesized micrometer-sized polypyrrole clusters. Similar characterizations are performed on channels interrupted by surface oxidation. Based on the increase and spectral response of the photo-current in the system, doping of diamond by charge carriers from polypyrrole is deduced.

Thin films of polypyrrole (PPy) are electrochemically polymerized in the thickness 25 nm on hydrogen-terminated intrinsic diamond surface exhibiting two-dimensional surface conductivity of 5 × 10 − 5 (S/). Opto-electronic properties of the system are characterized by Kelvin force microscopy detecting surface potentials. Shifts of the surface potentials of diamond and PPy under visible light illumination are attributed to sub- and super-band gap surface photovoltage effects changing energetic band bending in the range of 100–200 meV. We present a model considering influence of diamond surface termination, surface states and highly resistive bulk properties as well as excitonic transport in PPy. The model suggests a charge transfer between PPy and diamond.

We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before., Comment: 5 pages, 6 figures, accepted for publication in the "IOP Journal of Physics: Conference series" as a contribution to the proceedings of the 20th International Conference on "High Magnetic Fields in Semiconductor Physics", HMF 20

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.

Enormous research effort has been put into optimizing organic-based opto-electronic systems for efficient generation of free charge carriers. This optimization is mainly due to typically high dissociation energy (0.1-1 eV) and short diffusion length (10 nm) of excitons in organic materials. Inherently, interplay of microscopic structural, chemical, and opto-electronic properties plays crucial role. We show that employing and combining advanced scanning probe techniques can provide us significant insight into the correlation of these properties. By adjusting parameters of contact- and tapping-mode atomic force microscopy (AFM), we perform morphologic and mechanical characterizations (nanoshaving) of organic layers, measure their electrical conductivity by current-sensing AFM, and deduce work functions and surface photovoltage (SPV) effects by Kelvin force microscopy using high spatial resolution. These data are further correlated with local material composition detected using micro-Raman spectroscopy and with other electronic transport data. We demonstrate benefits of this multi-dimensional characterizations on (i) bulk heterojunction of fully organic composite films, indicating differences in blend quality and component segregation leading to local shunts of photovoltaic cell, and (ii) thin-film heterojunction of polypyrrole (PPy) electropolymerized on hydrogen-terminated diamond, indicating covalent bonding and transfer of charge carriers from PPy to diamond.

Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited. Comparing AFM morphology and current-sensing AFM data on the first and second layers, it is observed that the second deposition changes the morphology and increases the local conductivity of FE-MISPC-induced pits by up to an order of magnitude irrespective of their prior conductivity. This is attributed to the silicon nanocrystals (

We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films deposited on silicon, to induce electrostatically driven self-assembly of colloidal alumina nanoparticles into micro-patterns. Considering possible capacitive, sp2 phase and spatial uniformity factors to charging, we employ films with sub-100 nm thickness and about 60% relative sp2 phase content, probe the spatial material uniformity by Raman and electron microscopy, and repeat experiments at various positions. We demonstrate that electrostatic potential contrast on the NCD films varies between 0.1 and 1.2 V and that the contrast of more than ±1 V (as detected by Kelvin force microscopy) is able to induce self-assembly of the nanoparticles via coulombic and polarization forces. This opens prospects for applications of diamond and its unique set of properties in self-assembly of nano-devices and nano-systems.