Search

Resistive switching memories have garnered significant attention due to their high‐density integration and rapid in‐memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications with respect to their manufacturing process complexity, a leakage current of high resistance state (HRS), and the sneak‐path current problem that limits their scalability. Here, a mild‐temperature thermal oxidation technique for the fabrication of low‐power and ultra‐steep memristor based on Ag/TiOx/SnOx/SnSe2/Au architecture is developed. Benefiting from a self‐assembled oxidation layer and the formation/rupture of oxygen vacancy conductive filaments, the device exhibits an exceptional threshold switching behavior with high switch ratio exceeding 106, low threshold voltage of ≈1 V, long‐term retention of >104 s, an ultra‐small subthreshold swing of 2.5 mV decade−1 and high air‐stability surpassing 4 months. By decreasing temperature, the device undergoes a transition from unipolar volatile to bipolar nonvolatile characteristics, elucidating the role of oxygen vacancies migration on the resistive switching process. Further, the 1T1R structure is established between a memristor and a 2H‐MoTe2 transistor by the van der Waals (vdW) stacking approach, achieving the functionality of selector and multi‐value memory with lower power consumption. This work provides a mild‐thermal oxidation technology for the low‐cost production of high‐performance memristors toward future in‐memory computing applications. [ABSTRACT FROM AUTHOR]

The endurance limitation related to high coercive fields (${E}_{\text{c}}$) has been one of the substantial challenges to future memory applications of ferroelectric HfO2 films. In this work, we demonstrate a simple, efficient, and accurate method to regulate the ${E}_{\text{c}}$ value of Hf0.5Zr0.5O2 (HZO) films via interface modification through ultraviolet-ozone (UV-O3) irradiation on the surface of bottom electrode. Growth behaviors and ferroelectricity of HZO films were systematically investigated by varying UV-O3 irradiation time. HZO samples show a well-controlled ${E}_{\text{c}}$ upon a suitable UV-O3 irradiation time. Compared with the $w/o$ sample, the ${E}_{\text{c}}$ value of 30-min irradiated sample drops by ~29.5%, and a comparatively high $2{P}_{r}$ of 28.6 $\mu \text{C}$ /cm2 remains. The tuning of ${E}_{\text{c}}$ is clarified to be due to the ratio change of orthogonal and tetragonal phases in HZO films, which can be well controlled by the change of surface energy of the bottom electrode via varying the UV-O3 irradiation time. [ABSTRACT FROM AUTHOR]