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101 results on '"Lodovico Ratti"'

1. Layered CMOS SPADs for Low Noise Detection of Charged Particles

Author

Lodovico Ratti, Paolo Brogi, Gianmaria Collazuol, Gian-Franco Dalla Betta, Pier Simone Marrocchesi, Lucio Pancheri, Arta Sulay, Gianmarco Torilla, and Carla Vacchi

Subjects
SPAD, CMOS, DCR, charged particle detection, dual layer, Physics, QC1-999
Abstract

This paper reports the characterization of SPAD arrays fabricated in a 150 nm CMOS technology in view of applications to the detection of charged particles. The test vehicle contains SPADs with different active area and operated with different quenching techniques, either passive or active. The set of devices under test (DUTs) consists of single-tier chips, about 30 mm2 in area, with dual-tier structures where two chips are face-to-face bump bonded to each other. In the dual-layer structure obtained in this way, the coincidence signal between overlapping SPAD pairs is read out, with a beneficial impact on the dark count noise performance. The DUT characterization was mainly focused on studying the breakdown voltage in the single-layer arrays and the dark count rate (DCR), measured in different working conditions, in both the single- and the dual-layer structures. Comparison between the DCR performance of the two configurations clearly emphasizes the advantage of the coincidence readout architecture.

Published
2021
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2. First Demonstration of a Two-Tier Pixelated Avalanche Sensor for Charged Particle Detection

Author

Lucio Pancheri, Andrea Ficorella, Paolo Brogi, G. Collazuol, Gian-Franco Dalla Betta, P. S. Marrocchesi, Fabio Morsani, Lodovico Ratti, Aurore Savoy-Navarro, and Arta Sulaj

Subjects
Avalanche pixel sensor, particle detector, SPAD, CMOS, bump bonding, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

This paper presents the first experimental demonstration of a pixelated two-layer Geiger-mode avalanche sensor designed for the direct detection of charged particles. In the proposed device, each pixel is formed by two vertically aligned avalanche detectors, exploiting the coincidence between two simultaneous avalanche events to discriminate between the detection of particles and dark counts. A 48 × 16 pixel array has been designed and fabricated in a 150-nm CMOS process and vertically integrated through bump bonding. The pixel, that includes passive quenching, comparator, and digital electronic circuits for coincidence processing and signal storage, has a size of 50 μm × 75 μm and a maximum fill factor of 51.6%. The operation of the particle sensor has been validated with the measurement of dark count rate distribution at different coincidence resolution times. An average dark count rate per pixel as low as 93 mHz, corresponding to 24 Hz/mm2, was obtained at room temperature. A first sensor validation using a 90Sr β source is presented.

Published
2017
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3. A Wireless, Battery-Powered Probe Based on a Dual-Tier CMOS SPAD Array for Charged Particle Sensing

Author

Vacchi, Joana Minga, Paolo Brogi, Gianmaria Collazuol, Gian-Franco Dalla Betta, Pier Simone Marrocchesi, Fabio Morsani, Lucio Pancheri, Lodovico Ratti, Gianmarco Torilla, and Carla

Subjects
SPAD, wireless detection probe, battery powered, DCR, SiPM, dual layer
Abstract

A compact probe for charged particle imaging, with potential applications in source activity mapping and radio-guided surgery was designed and tested. The development of this technology holds significant implications for medical imaging, offering healthcare professionals accurate and efficient tools for diagnoses and treatments. To fulfill the portability requirements of these applications, the probe was designed for battery operation and wireless communication with a PC. The core sensor is a dual-layer CMOS SPAD detector, fabricated using 150 nm technology, which uses overlapping cells to produce a coincidence signal and reduce the dark count rate (DCR). The sensor is managed and interfaced with a microcontroller, and custom firmware was developed to facilitate communication with the sensor. The performance of the probe was evaluated by characterizing the on-board SPAD detector in terms of the DCR, and the results were consistent with the characterization measurements taken on the same chip samples using a purposely developed benchtop setup.

Published
2023
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4. Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs

Author

G.-F. Dalla Betta, Lodovico Ratti, Paolo Brogi, A. Ficorella, Lucio Pancheri, G. Collazuol, C. Vacchi, and P. S. Marrocchesi

Subjects
010302 applied physics, Physics, Scattering, Substrate (electronics), Bulk damage, CMOS single-photon avalanche diode (SPAD), dark count noise, radiation effects, 01 natural sciences, Electronic, Optical and Magnetic Materials, CMOS, 0103 physical sciences, Neutron source, Neutron, Irradiation, Electrical and Electronic Engineering, Atomic physics, Energy (signal processing), Diode
Abstract

Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to $10^{\textsf {11}}$ cm $^{-\textsf {2}}$ are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.

Published
2019

5. DCR Performance in Neutron-Irradiated CMOS SPADs from 150- To 180-nm Technologies

Author

C. Vacchi, G.-F. Dalla Betta, G. Collazuol, G. Torilla, Lodovico Ratti, Lucio Pancheri, A. Ficorella, P. S. Marrocchesi, Fabio Morsani, and P. Brogi

Subjects
Nuclear and High Energy Physics, Materials science, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, business.industry, Semiconductor device modeling, 01 natural sciences, Fluence, Nuclear Energy and Engineering, CMOS, Bulk damage, CMOS single-photon avalanche diode (SPAD), dark count rate (DCR), 0103 physical sciences, Neutron source, Optoelectronics, Device under test, Neutron, CMOS SPAD Array Dark Count Rate Radiation Hardness Single Photon Avalanche Diode, Irradiation, Electrical and Electronic Engineering, business, Diode
Abstract

Single-photon avalanche diodes (SPADs) fabricated using two different CMOS technologies were exposed to a neutron source up to a maximum fluence of $3\times 10^{11}\,\,1$ -MeV neutron equivalent cm−2. Significant changes in the dark count rate (DCR), with a strong dependence on the fluence and the device active area, were detected after irradiation. A model for the probability of DCR degradation, accounting for the source spectrum and the geometry of the device under test (DUT), was proposed and proved to be in good agreement with experimental data. The model may be helpful in performing worst-case analysis of SPAD-based detection systems under neutron irradiation.

Published
2020

6. Ionizing Radiation Effects on the Noise of 65 nm CMOS Transistors for Pixel Sensor Readout at Extreme Total Dose Levels

Author

Luigi Gaioni, Lodovico Ratti, Valerio Re, Massimo Manghisoni, Gianluca Traversi, and E. Riceputi

Subjects
noise, Nuclear and High Energy Physics, Materials science, Analog front-end electronics, Settore ING-INF/01 - Elettronica, 01 natural sciences, law.invention, ionizing radiation effects, MOSFET, Micro-electronics and interconnections [4], law, Nuclear Energy and Engineering, Electrical and Electronic Engineering, 0103 physical sciences, Detectors and Experimental Techniques, Electronic circuit, 010302 applied physics, Noise measurement, 010308 nuclear & particles physics, business.industry, Transistor, CMOS, Logic gate, Absorbed dose, Optoelectronics, business, Noise (radio)
Abstract

This paper is focused on the study of the noise performance of 65 nm CMOS transistors at extremely high total ionizing dose (TID) levels of the order of several hundreds of Mrad(SiO2). Noise measurements are reported and discussed, analyzing radiation effects on $1/f$ noise and channel thermal noise. In nMOSFETs, up to 10 Mrad(SiO2), the experimental behavior is consistent with a damage mechanism mainly associated with lateral isolation oxides, and can be modeled by parasitic transistors turning on after irradiation and contributing to the total noise of the device. At very high dose, these parasitic transistors tend to be turned off by negative charge accumulating in interface states and compensating radiation-induced positive charge building up inside thick isolation oxides. Effects associated with ionization and hydrogen transport in spacer oxides may become dominant at 600 Mrad(SiO2) and may explain the observed noise behavior at extremely high TID. The results of this analysis provide an understanding of noise degradation effects in analog front-end circuits integrated in readout chips for pixel detectors operating in very harsh radiation environments such as the High-Luminosity Large Hadron Collider.

Published
2018

7. First Demonstration of a Two-Tier Pixelated Avalanche Sensor for Charged Particle Detection

Author

Fabio Morsani, Paolo Brogi, P. S. Marrocchesi, A. Sulaj, A. Savoy-Navarro, Lucio Pancheri, G. Collazuol, A. Ficorella, Gian-Franco Dalla Betta, and Lodovico Ratti

Subjects
Comparator, Physics::Instrumentation and Detectors, BEAM, 02 engineering and technology, 01 natural sciences, Temperature measurement, Signal, Coincidence, TDCS, TRACKING, 0103 physical sciences, Electronic, 0202 electrical engineering, electronic engineering, information engineering, Optical and Magnetic Materials, Electrical and Electronic Engineering, particle detector, Electronic circuit, bump bonding, Physics, Avalanche pixel sensor, Pixel, SIPM, 010308 nuclear & particles physics, business.industry, CMOS, SPAD, Biotechnology, Electronic, Optical and Magnetic Materials, 020208 electrical & electronic engineering, Detector, PHOTODIODES, FUTURE LINEAR COLLIDERS, CMOS TECHNOLOGY, HL-LHC, Charged particle, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, business, lcsh:TK1-9971
Abstract

This paper presents the first experimental demonstration of a pixelated two-layer Geiger-mode avalanche sensor designed for the direct detection of charged particles. In the proposed device, each pixel is formed by two vertically aligned avalanche detectors, exploiting the coincidence between two simultaneous avalanche events to discriminate between the detection of particles and dark counts. A 48 $\times $ 16 pixel array has been designed and fabricated in a 150-nm CMOS process and vertically integrated through bump bonding. The pixel, that includes passive quenching, comparator, and digital electronic circuits for coincidence processing and signal storage, has a size of 50 $\mu \text{m} \,\, \times $ 75 $\mu \text{m}$ and a maximum fill factor of 51.6%. The operation of the particle sensor has been validated with the measurement of dark count rate distribution at different coincidence resolution times. An average dark count rate per pixel as low as 93 mHz, corresponding to 24 Hz/mm2, was obtained at room temperature. A first sensor validation using a 90Sr $\beta $ source is presented.

Published
2017

8. A 65 nm CMOS analog processor with zero dead time for future pixel detectors

Author

Luigi Gaioni, Tom Zimmerman, B. Nodari, Valerio Re, D. Braga, Lodovico Ratti, D. C. Christian, Gregory Deptuch, Farah Fahim, AstroParticule et Cosmologie (APC (UMR_7164)), Observatoire de Paris, PSL Research University (PSL)-PSL Research University (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Observatoire de Paris, and PSL Research University (PSL)-PSL Research University (PSL)-Université Paris Diderot - Paris 7 (UPD7)

Subjects
Pixel detectors, Nuclear and High Energy Physics, Comparator, Physics::Instrumentation and Detectors, Analog front-end, CMOS, High-Luminosity LHC, Zero dead time processor, Instrumentation, Flash ADC, Settore ING-INF/01 - Elettronica, 7. Clean energy, 01 natural sciences, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Charge amplifier, Physics, Pixel, 010308 nuclear & particles physics, business.industry, Detector, Electrical engineering, Dead time, business
Abstract

International audience; Next generation pixel chips at the High-Luminosity (HL) LHC will be exposed to extremely high levels of radiation and particle rates. In the so-called Phase II upgrade, ATLAS and CMS will need a completely new tracker detector, complying with the very demanding operating conditions and the delivered luminosity (up to 5×10 34 cm −2 s −1 in the next decade). This work is concerned with the design of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier featuring a detector leakage compensation circuit, and a compact, single ended comparator that guarantees very good performance in terms of channel-to-channel dispersion of threshold without needing any pixel-level trimming. A flash ADC is exploited for digital conversion immediately after the charge amplifier. A thorough discussion on the design of the charge amplifier and the comparator is provided along with an exhaustive set of simulation results.

Published
2017

9. Algorithms for Threshold Dispersion Minimization of the CHIPIX65 Asynchronous Front-End

Author

Gianluca Traversi, Massimo Manghisoni, Francesco De Canio, Luigi Gaioni, M. Sonzogni, Valerio Re, and Lodovico Ratti

Subjects
Front and back ends, Computer Science::Hardware Architecture, Pixel, Application-specific integrated circuit, CMOS, Computer science, Asynchronous communication, Physics::Instrumentation and Detectors, Computation, Detector, Algorithm, Settore ING-INF/01 - Elettronica, Electronic circuit
Abstract

This work discusses four different algorithms for the minimization of threshold dispersion in multichannel readout circuits for pixel detectors. These algorithms, which are based on different methods (e.g. charge scans, threshold scans, etc) and differs in terms of performance and computation time, have been tested on the asynchronous front-end integrated in the CHIPIX65_FE0, a readout ASIC prototype designed in a 65 nm CMOS technology.

Published
2019

10. Dark Count Rate Degradation in CMOS SPADs Exposed to X-Rays and Neutrons

Author

A. Ficorella, G.-F. Dalla Betta, M. Musacci, L. Lodola, Paolo Brogi, Fabio Morsani, P. S. Marrocchesi, C. Vacchi, G. Collazuol, Lodovico Ratti, Serena Mattiazzo, and Lucio Pancheri

Subjects
Nuclear and High Energy Physics, Materials science, Physics::Instrumentation and Detectors, SILICON DETECTORS, Photodetector, diode (SPAD), RADIATION HARDNESS, Bulk damage, charged particle detectors, CMOS single-photon avalanche diode (SPAD), total ionizing dose, Nuclear electronics, Neutron, Electrical and Electronic Engineering, Radiation hardening, CMOS single-photon avalanche, IRRADIATION, SIGNAL, DAMAGE, Diode, Avalanche diode, business.industry, Settore FIS/01 - Fisica Sperimentale, Avalanche photodiode, Nuclear Energy and Engineering, Single-photon avalanche diode, Optoelectronics, business
Abstract

Single-photon avalanche diode (SPAD) arrays fabricated in a 180-nm CMOS technology with a high-voltage option have been exposed to calibrated neutron and X-ray sources to evaluate their radiation tolerance. The technology is being investigated in view of the design of low material budget detectors for charged particle tracking based on the coincidence of the signals coming from two or more overlapping layers of SPAD sensors. Each element in the array is a monolithic detector including the processing electronics together with the diode in the same substrate. Different sensor dimensions and structures have been implemented in the test chip to thoroughly explore the technology features. This paper will present and discuss the results from the characterization, in terms of dark count rate, of SPAD arrays irradiated with X-ray doses reaching 1 Mrad(SiO2) and with neutron fluences up to $10^{11}~1$ -MeV neutron equivalent cm $^{-2}$ .

Published
2019

11. Radiation tolerance characterization of Geiger-mode CMOS avalanche diodes for a dual-layer particle detector

Author

F. Stolzi, A. Sulaj, G. Collazuol, Majid Zarghami, Lucio Pancheri, A. Ficorella, L. Silvestrin, P. S. Marrocchesi, Serena Mattiazzo, J. E. Suh, Paolo Brogi, S. Noli, Gabriele Bigongiari, A. Savoy Navarro, Fabio Morsani, G.-F. Dalla Betta, M. Musacci, Lodovico Ratti, C. Checchia, C. Vacchi, AstroParticule et Cosmologie (APC (UMR_7164)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), Observatoire de Paris, PSL Research University (PSL)-PSL Research University (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Observatoire de Paris, and PSL Research University (PSL)-PSL Research University (PSL)-Université Paris Diderot - Paris 7 (UPD7)

Subjects
Nuclear and High Energy Physics, Photon, Physics::Instrumentation and Detectors, Pixelated sensor, 02 engineering and technology, 01 natural sciences, Particle detector, law.invention, 010309 optics, Tracking detectors, law, 0103 physical sciences, Geiger counter, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Instrumentation, Diode, Physics, Interconnection, business.industry, Settore FIS/01 - Fisica Sperimentale, Detector, CMOS, 021001 nanoscience & nanotechnology, Radiation tolerance, Single-photon avalanche diode, Single Photon Avalanche Diode, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring a high voltage (HV) option, has been investigated in terms of radiation tolerance, in view of the design of low material budget dual-tier detectors for charged particle tracking based on the coincidence of signals coming from pairs of vertically aligned pixels. Each pixel in the array includes both the processing electronics and the sensing element in a monolithic structure. The test vehicles were irradiated with 10 keV X-rays up to a dose of 1 Mrad (SiO 2 ) and with neutrons up to a fluence of 10 11 n eq cm −2 . A selection of the characterization results are presented together with the main features of a new large scale SPAD array to be fabricated in a 150 nm CMOS technology and ready for vertical interconnection in a dual layer structure.

Published
2019

12. Design and Test of a 65nm CMOS Front-End with Zero Dead Time for Next Generation Pixel Detectors

Author

B. Nodari, Lodovico Ratti, Grzegorz Deptuch, Farah Fahim, Luigi Gaioni, Tom Zimmerman, D. Braga, Valerio Re, D. C. Christian, Institut de Physique Nucléaire de Lyon (IPNL), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Comparator, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, Computer science, business.industry, Preamplifier, Detector, Electrical engineering, Flash ADC, Dead time, Settore ING-INF/01 - Elettronica, 01 natural sciences, Front and back ends, Computer Science::Hardware Architecture, Electronics, pixel sensors, CMOS, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques, business, Electronic circuit
Abstract

International audience; This work is concerned with the experimental characterization of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier with detector leakage compensation circuit, and a compact, single ended comparator able to correctly process hits belonging to two consecutive bunch crossing periods. A 2-bit Flash ADC is exploited for digital conversion immediately after the preamplifier. A description of the circuits integrated in the front-end processor and the initial characterization results are provided.

Published
2018

13. Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications

Author

Lodovico Ratti, Valerio Re, Francesco De Canio, Gianluca Traversi, Massimo Manghisoni, and Luigi Gaioni

Subjects
Particle physics, Materials science, Transmitter, Transistor, Hardware_PERFORMANCEANDRELIABILITY, Radiation, Chip, Settore ING-INF/01 - Elettronica, Power (physics), law.invention, CMOS, law, Hardware_INTEGRATEDCIRCUITS, Signal integrity, Detectors and Experimental Techniques, Electronic circuit
Abstract

This work is concerned with the design and characterization of an SLVS transmitter/receiver pair, to be used for I/O links in High Energy Physics applications. Core transistors with a power supply of 1.2 V have been considered in the design in order to mitigate the TID effects, due to the harsh radiation environment foreseen. The circuits have been implemented in a 65 nm CMOS technology. The prototype chip was designed and fabricated in the framework of the RD53 project and was completely characterized in the first quarter of 2016. The chip has been also irradiated with X-rays in order to evaluate the effect of the ionizing radiation on the signal integrity

Published
2018

14. Dynamic Compression of the Signal in a Charge Sensitive Amplifier: From Concept to Design

Author

Valerio Re, Daniele Comotti, Lodovico Ratti, Luigi Gaioni, and Massimo Manghisoni

Subjects
Nuclear and High Energy Physics, Engineering, business.industry, CMOS, Detector, Electrical engineering, Signal compression, Settore ING-INF/01 - Elettronica, Signal, Capacitance, front-end, Nuclear Energy and Engineering, dynamic signal compression, Logic gate, Electronic engineering, Dynamic range compression, Electrical and Electronic Engineering, business, Sensitivity (electronics)
Abstract

This work is concerned with the design of a low-noise Charge Sensitive Amplifier featuring a dynamic signal compression based on the non-linear features of an inversion-mode MOS capacitor. These features make the device suitable for applications where a non-linear characteristic of the front-end is required, such as in imaging instrumentation for free electron laser experiments. The aim of the paper is to discuss a methodology for the proper design of the feedback network enabling the dynamic signal compression. Starting from this compression solution, the design of a low-noise Charge Sensitive Amplifier is also discussed. The study has been carried out by referring to a 65 nm CMOS technology.

Published
2015

15. The PixFEL front-end for X-ray imaging in the radiation environment of next generation FELs

Author

Lorenzo Fabris, Gianluca Traversi, Giovanni Verzellesi, Marco Grassi, G. Rizzo, A. Paladino, G.-F. Dalla Betta, F. Forti, Fabio Morsani, E. Paoloni, Lucio Pancheri, P. Malcovati, G. Batignani, Giulia Casarosa, M. A. Benkechkache, Roberto Mendicino, Lodovico Ratti, Valerio Re, Massimo Manghisoni, C. Vacchi, L. Lodola, S. Bettarini, Hesong Xu, and Daniele Comotti

Subjects
0301 basic medicine, Nuclear and High Energy Physics, Materials science, X-ray detector, Radiation, Settore ING-INF/01 - Elettronica, 01 natural sciences, law.invention, 03 medical and health sciences, Optics, law, Nuclear Medicine and Imaging, 0103 physical sciences, Instrumentation, Radiology, Nuclear Medicine and Imaging, 010308 nuclear & particles physics, business.industry, Detector, Free-electron laser, Laser, 030104 developmental biology, CMOS, Absorbed dose, Photonics, Radiology, business
Abstract

In the framework of the PixFEL project, a processing channel for pixel sensor readout has been designed and fabricated in a 65 nm CMOS technology. The detector under development is aimed at applications to coherent X-ray diffraction imaging (CXDI) at the next generation free electron lasers (FELs). Especially in the detector region around the hole for the unscattered photon beam, pixels will be subjected to huge doses of ionizing radiation, in the order of tens of Grad(SiO 2 , during their lifetime. The total ionizing dose (TID) for the frontend electronics, while significantly reduced by the shielding effect of the detector, is still expected to exceed one Grad(SiO 2 . This paper investigates the performance degradation in the PixFEL readout circuit, in particular in the charge sensitive amplifier, after exposure to X-ray doses up to 100 Mrad(SiO 2 .

Published
2017

16. Development of a Large Pixel Chip Demonstrator in RD53 for ATLAS and CMS Upgrades

Author

Fabrizio Palla, Carla Vacchi, Attilio Andreazza, Jorgen Christiansen, E. Conti, Vratislav Kafka, Ruud Kluit, Vladimir Gromov, Esther Jiménez, Lodovico Ratti, Mark Prydderch, Simone Gerardin, Serena Mattiazzo, Zdenko Janoska, Bob Van Eijk, Mohsine Menouni, Tom Zimmerman, Alessandro Paccagnella, Luis Miguel Jara Casas, Piotr Rymazewski, Nicola Bacchetta, F. R. Palomo, Ivan Vila, Timon Heim, Patrick Breugnon, Stephanie Godiot, Stamatis Poulios, Tianyang Wang, Katerini Papadopoulou, Norbert Wermes, E. Riceputi, Veronica Wallangen, Marco Vogt, Stephen Thomas, Massimo Minuti, Marta Bagatin, Renaud Gaglione, Farah Fahim, Giovanni Mazza, F. Loddo, Angelo Rivetti, Valentino Liberali, Tomas Benka, S. Orfanelli, Michal Marcisovsky, Alberto Stabile, Duccio Abbaneo, M. Karagounis, Natale Demaria, Amanda Krieger, F. Munoz, Manuel Dionisio Da Rocha Rolo, Gianluca Traversi, Ennio Monteil, Maurice Garcia-Sciveres, Luca Frontini, Luca Pacher, Dario Bisello, B. Nachman, Gordon Neue, Rebecca Carney, Patrick Pangaud, Fatah Ellah Rarbi, Giuseppe De Robertis, Cristoforo Marzocca, G. Calderini, Fabian Huegging, Stefano Bonaldo, Alexandre Rozanov, Gian Mario Bilei, Francesco Corsi, Francesco Crescioli, Miroslav Havranek, S. Marconi, F. Licciulli, Konstantin Androsov, Olivier Le Dortz, Fabio Morsani, A. Paterno, Sally Seidel, Dario Gnani, James Hoff, Pisana Placidi, D. Vogrig, Sandeep Miryala, Stephen Jean-Marc Bell, Hans Krueger, Lukas Tomasek, Mauro Menichelli, Valerio Re, David Charles Christian, Tomasz Hemperek, Marco Bomben, Marlon Barbero, Luigi Gaioni, F. Ciciriello, Martin Robert Hoeferkamp, Arseniy Vitkovskiy, Daniel Dzahini, Deepak Gajanna, E. Lopez-Morillo, Massimo Manghisoni, Cesar Renteira, Roberto Beccherle, G. Dellacasa, Giovanni Marchiori, Gregorz Deptuch, Vaclav Vrba, Francesco De Canio, Denis Fougeron, Guido Magazzu, Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE (UMR_7585)), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire d'Annecy de Physique des Particules (LAPP), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), RD53, Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Aix Marseille Université (AMU), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire d'Annecy de Physique des Particules (LAPP/Laboratoire d'Annecy-le-Vieux de Physique des Particules), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)

Subjects
Computer science, High radiation, Integrated circuit design, 01 natural sciences, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, semiconductor detector: pixel, Atlas (anatomy), RD53 collaboration, 0103 physical sciences, medicine, Pixel matrix, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques, High rate, Multidisciplinary, Pixel, 010308 nuclear & particles physics, business.industry, CMS, 65 nm CMOS pixel chip, ATLAS and CMS phase 2 upgrades, ATLAS, Chip, medicine.anatomical_structure, CMOS, integrated circuit: design, electronics: readout, business, Computer hardware, 65 nm CMOS pixel chip, RD53 collaboration, ATLAS and CMS phase 2 upgrades
Abstract

International audience; RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and very high radiation levels (500 Mrad, possibly 1 Grad) for ATLAS and CMS phase 2 upgrades. It features serial powering operation and design variations in the analog and digital pixel matrix for different testing purposes. The design and verification of RD53A are described together with an outline of the plans to develop final pixel chips for the two experiments.

Published
2017

18. Test results of the CHIPIX65 asynchronous front-end for the HL-LHC experiment upgrades

Author

Massimo Manghisoni, Valerio Re, Luigi Gaioni, Lodovico Ratti, F. De Canio, and Gianluca Traversi

Subjects
Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, Integrated circuit, Electron, Radiation, 01 natural sciences, Settore ING-INF/01 - Elettronica, 030218 nuclear medicine & medical imaging, law.invention, Nuclear physics, 03 medical and health sciences, ionizing radiation effects, 0302 clinical medicine, law, Nuclear Medicine and Imaging, 0103 physical sciences, Analog front-ends, CMOS processes, electronicnoise, pixel readout, Instrumentation, Radiology, Nuclear Medicine and Imaging, Physics, Large Hadron Collider, Noise measurement, 010308 nuclear & particles physics, Detector, Dissipation, CMOS, Radiology
Abstract

This work discusses the main results relevant to the characterization of an analogfront-end processor designed in view of experiments with unprecedented particle rates and radiation levels at the High-Luminosity LHC (HL-LHC). The frontend channel presented in this paperis part of the CHIPIX65FE0 prototype, a readout ASIC designed in a 65 nm CMOS technology in the frame of the CERN RD53 collaboration. The prototype integrates $\mathrm{a}64 \times64$ pixelmatrix, divided into two $32 \times64$ sub-matrices with $50 \mu \mathrm{m}$ pitch, embodying two analog front-end architectures based on synchronous and asynchronous hit discriminators. The analog chain takes an overall area close to $1000 \mu \mathrm{m^{2}}$, with a per-channel power dissipation around $5 \mu \mathrm{W}$. The paper is focused on the characterization of the array with asynchronous channels, before and after exposure to ionizing doses up to 630 Mrad(SiO 2 of X-rays. The mean value of the equivalent noise charge (ENC), not significantlyaffected by radiation, is close to 90 electrons with no sensor connected to the front-end. Thethreshold dispersion before irradiation is 55 electrons, for a tuned threshold of 600 electrons, with a moderate increase after irradiation. The assessed performance guarantees sub-1000 electrons stable threshold operations, which is a mandatory feature for highly efficient readoutchips for the HL-LHC.

Published
2017

19. A prototype of pixel readout ASIC in 65 nm CMOS technology for extreme hit rate detectors at HL-LHC

Author

G. Dellacasa, Lodovico Ratti, Luigi Gaioni, A. Rivetti, F. Licciulli, Serena Mattiazzo, A. Paterno, Valerio Re, Gianluca Traversi, Pisana Placidi, L. Pacher, S. Marconi, Cristoforo Marzocca, F. Loddo, F. De Canio, N. Demaria, E. Monteil, G. Mazza, F. Ciciriello, Alberto Stabile, Guido Magazzu, M. Da Rocha Rolo, and C. Veri

Subjects
Bandgap voltage reference, Computer science, Tracker, 01 natural sciences, Settore ING-INF/01 - Elettronica, Analog front-end, Application-specific integrated circuit, Front-end electronics for detector readout, 0103 physical sciences, 010306 general physics, HEP, Detectors, ASIC, Tracker, Pixel, Instrumentation, Radiation-hard electronics, Mathematical Physics, Pixel, 010308 nuclear & particles physics, business.industry, ASIC, Detector, Electrical engineering, Detectors, Chip, HEP, Particle tracking detectors (Solid-state detectors), CMOS, Serializer, business
Abstract

This paper describes a readout ASIC prototype designed by the CHIPIX65 project, part of RD53, for a pixel detector at HL-LHC . A 64×64 matrix of 50×50μm2 pixels is realised. A digital architecture has been developed, with particle efficiency above 99.5% at 3 GHz/cm2 pixel rate, trigger frequency of 1 MHz and 12.5μsec latency. Two analog front end designs, one synchronous and one asynchronous, are implemented. Charge is measured with 5-bit precision, analog dead-time below 1%. The chip integrates for the first time many of the components developed by the collaboration in the past, including the Digital-to-Analog converters, Bandgap reference, Serializer, sLVS drivers, and analog Front Ends. Irradiation tests on these components proved their reliability up to 600 Mrad.

Published
2017

20. Results from CHIPIX-FE0, a Small Scale Prototype of a New Generation Pixel Readout ASIC in 65nm CMOS for HL-LHC

Author

Paterno', Andrea, Angelo, Rivetti, Cristoforo, Marzocca, Ennio, Monteil, Flavio, Loddo, Francesco De Canio, Francesco, Licciulli, Gianluca, Traversi, Gianni, Mazza, Giulio, Dellacasa, Guido, Magazzu, Lino, Demaria, Lodovico, Ratti, Luca, Pacher, Luigi, Gaioni, Manuel Dionisio Da Rocha Rolo, Pisana, Placidi, Richard Wheadon Sara Marconi, Serena, Mattiazzo, Panati, Serena, and Valerio, Re

Subjects
radiation, pixel, sensor, ASIC, electronics, readout, LHC, ASIC, readout, electronics, LHC, pixel, sensor, radiation
Published
2017

21. APiX: a Geiger-mode Avalanche Digital Sensor for Particle Detection

Author

Lodovico Ratti, Majid Zarghami, Lucio Pancheri, A. Ficorella, F. Stolzi, P. S. Marrocchesi, J. E. Suh, Fabio Morsani, L. Lodola, G.-F. Dalla Betta, C. Vacchi, M. Musacci, C. Checchia, A. Savoy-Navarro, G. Collazuol, L. Silvestrin, S. Noli, Gabriele Bigongiari, A. Sulaj, M. Zanoli, Paolo Brogi, AstroParticule et Cosmologie (APC (UMR_7164)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Observatoire de Paris, PSL Research University (PSL)-PSL Research University (PSL)-Université Paris Diderot - Paris 7 (UPD7), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Observatoire de Paris, and PSL Research University (PSL)-PSL Research University (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
dark counts, Physics::Instrumentation and Detectors, readout electronics, 02 engineering and technology, Tracking (particle physics), IP networks, 01 natural sciences, nuclear electronics, Imaging, law.invention, 020210 optoelectronics & photonics, law, quenched avalanche, 0202 electrical engineering, electronic engineering, information engineering, [PHYS]Physics [physics], Physics, Detector, Detectors, particle triggers, Charged particle, 3. Good health, Micrometers, detection plane, Image reconstruction, photodetectors, Particle physics experiments, simultaneous avalanche events, Silicon, metal light-shield layer, timing resolution, low material budget, particle tracking, Optics, shallow region, 0103 physical sciences, Prototypes, charged particle detection, vertical cross-talk, Geiger counter, fine detector segmentation, avalanche photodiodes, vertically aligned pixels, Pixel, 010308 nuclear & particles physics, business.industry, inter-pixel cross-talk, position sensitive particle detectors, Digital sensors, silicon radiation detectors, particle physics experiments, position-sensitive element, silicon sensor, Particle, Geiger-mode avalanche digital sensor, elemental semiconductors, business
Abstract

International audience; In this paper, we present a two-layered silicon sensor working in Geiger-mode avalanche regime and designed for charged particle detection. Each position-sensitive element is comprised of two vertically aligned pixels, exploiting the coincidence between two simultaneous avalanche events to discriminate between particle triggers and dark counts. This approach potentially offers several advantages. First, a low material budget can be achieved thanks to the thinning of the detector down to a few tens of microns (e.g. 50 μm) as the avalanche starts in a shallow region just a few microns deep. Operation in a regime of quenched avalanche allows for an excellent timing resolution and provides an internal gain that makes a front-end amplification stage unnecessary, thus dramatically reducing the power consumption. Fine detector segmentation is possible as the (horizontal) inter-pixel cross-talk in the detection plane can be reduced to a comfortable level while the vertical cross-talk is totally eliminated using a metal light-shield layer. The detector is also insensitive to background light. A number of applications could benefit from a detector with these characteristics, including particle tracking and vertex reconstruction in particle physics experiments at accelerators and in space, as well as ionizing radiation imaging in nuclear medicine and life-sciences.

Published
2017

22. Results from CHIPIX-FE0, a Small-Scale Prototype of a New Generation Pixel Readout ASIC in 65 nm CMOS for HL-LHC

Author

F. Licciulli, Alberto Stabile, Serena Panati, A. Paterno, Pisana Placidi, Natale Demaria, Cristoforo Marzocca, Guido Magazzu, Francesco De Canio, Luca Pacher, Giovanni Mazza, Lodovico Ratti, G. Dellacasa, S. Marconi, Angelo Rivetti, Richard Wheadon, F. Ciciriello, M. Rolo, Gianluca Traversi, Ennio Monteil, F. Loddo, Valerio Re, Serena Mattiazzo, Francesco Rotondo, and Luigi Gaioni

Subjects
Local oscillator, Settore ING-INF/01 - Elettronica, 01 natural sciences, CERN RD53 international collaboration, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, Microelectronics, 0302 clinical medicine, Planar, Micro-electronics and interconnections [4], 0103 physical sciences, readout ASIC, Detectors and Experimental Techniques, pixel sensors, Radiation hardening, Digital electronics, Physics, Pixel, 010308 nuclear & particles physics, business.industry, Detector, Electrical engineering, readout ASIC, CERN RD53 international collaboration, Chip, CMOS, business
Abstract

CHIPIX65-FE0 is a readout ASIC in CMOS 65nm designed by the CHIPIX65 project for a pixel detector at the HL-LHC, consisting of a matrix of 64x64 pixels of dimension 50x50 μm2. It is fully functional, can work at low thresholds down to 250e− and satisfies all the specifications. Results confirm low-noise, fast performance of both the synchronous and asynchronous front-end in a complex digital chip. CHIPIX65-FE0 has been irradiated up to 600 Mrad and is only marginally affected on analog performance. Further irradiation to 1 Grad will be performed. Bump bonding to silicon sensors is now on going and detailed measurements will be presented. The HL-LHC accelerator will constitute a new frontier for particle physics after year 2024. One major experimental challenge resides in the inner tracking detectors, measuring particle position: here the dimension of the sensitive area (pixel) has to be scaled down with respect to LHC detectors. This paper describes the results obtained by CHIPIX65-FE0, a readout ASIC in CMOS 65nm designed by the CHIPIX65 project as small-scale demonstrator for a pixel detector at the HL-LHC. It consists of a matrix of 64x64 pixels of dimension 50x50 um2 pixels and contains several pieces that are included in RD53A, a large scale ASIC designed by the RD53 Collaboration: two out of three front-ends (a synchronous and an asynchronous architecture); several building blocks; a (4x4) pixel region digital architecture with central local buffer storage, complying with a 3 GHz/cm2 hit rate and a 1 MHz trigger rate maintaining a very high efficiency (above 99%). The chip is 100% functional, either running in triggered or trigger-less mode. All building-blocks (DAC, ADC, Band Gap, SER, sLVS-TX/RX) and very front ends are working as expected. Analog performance shows a remarkably low ENC of 90e-, a fast-rise time below 25ns and low-power consumption (about 4μA/pixel) in both synchronous and asynchronous front-ends; a very linear behavior of CSA and discriminator. No significant cross talk from digital electronics has been measured, achieving a low threshold of 250e-. Signal digitization is obtained with a 5b-Time over Threshold technique and is shown to be fairly linear, working well either at 80 MHz or with higher frequencies of 300 MHz obtained with a tunable local oscillator. Irradiation results up to 600 Mrad at low temperature (-20°C) show that the chip is still fully functional and analog performance is only marginally degraded. Further irradiation will be performed up to 1 Grad either at low or room temperature, to further understand the level of radiation hardness of CHIPIX65-FE0. We are now in the process of bump bonding CHIPIX65-FE0 to 3D and possibly planar silicon sensors during spring. Detailed results will be presented in the conference paper.

Published
2017

23. First experimental results on active and slim-edge silicon sensors for XFEL

Author

G.-F. Dalla Betta, Piero Malcovati, Antonio Paladino, Giovanni Verzellesi, Sabina Ronchin, Marco Grassi, M. E. A. Benkechcache, Maurizio Boscardin, Giulia Casarosa, Eugenio Paoloni, Fabio Morsani, Lodovico Ratti, Gianluca Traversi, G. Batignani, Hesong Xu, Lorenzo Fabris, L. Lodola, F. Forti, Massimo Manghisoni, G. Rizzo, S. Bettarini, Valerio Re, C. Vacchi, Lucio Pancheri, and Marcello Giorgi

Subjects
Fabrication, Materials science, Instrumentation for FEL, Solid state detectors, X-ray detectors, Instrumentation, Mathematical Physics, Silicon, X-ray detector, chemistry.chemical_element, 01 natural sciences, Settore ING-INF/01 - Elettronica, 030218 nuclear medicine & medical imaging, law.invention, 03 medical and health sciences, 0302 clinical medicine, Optics, law, 0103 physical sciences, Wafer, Diode, 010308 nuclear & particles physics, business.industry, Free-electron laser, Biasing, Laser, chemistry, business
Abstract

This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 μm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 μm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.

Published
2016

24. Review of radiation damage studies on DNW CMOS MAPS

Author

Lodovico Ratti, Massimo Manghisoni, S. Bettarini, Luciano Bosisio, Valerio Re, Gianluca Traversi, Stefano Zucca, G. Rizzo, Alessia Manazza, Luigi Gaioni, Irina Rashevskaya, Vladimir Cindro, Fabio Morsani, Traversi, G., Gaioni, L., Manazza, A., Manghisoni, M., Ratti, L., Re, V., Zucca, S., Bettarini, S., Rizzo, G., Morsani, F., Bosisio, Luciano, Rashevskaya, Irina, and Cindro, V.

Subjects
Ionizing radiation, Physics, Nuclear and High Energy Physics, business.industry, Charge collection efficiency, CMOS monolithic active pixel sensors MAPS, Analog front-end, Radiation, Laser, Settore ING-INF/01 - Elettronica, Fluence, deep N-well, ionizing radiation, analog front-end, bulk damage, charge collection efficiency, law.invention, Bulk damage, Deep N-well, Instrumentation, CMOS, law, Radiation damage, Optoelectronics, Neutron, Irradiation, business, Diode
Abstract

Monolithic active pixelsensors fabricated in abulk CMOS technology with no epitaxial layer and standard resistivity(10 Ω cm) substrate, featuring a deep N-well as the collecting electrode (DNW MAPS), have been exposed to γ-rays, up to a final dose of 10 Mrad (SiO2), and to neutrons from a nuclear reactor, up to a total 1 MeV neutron equivalent fluence of about 3.7 x 10^13 cm^−2. The irradiation campaign was aimed at studying the effects of radiation on the most significant parameters of the front-end electronics and on the charge collection properties of the sensors. Device characterization has been carried out before and after irradiations. The DNW MAPS irradiated with 60Co γ-rays were also subjected to high temperature annealing (100 C for 168 h). Measurements have been performed through a number of different techniques, including electrical characterization of the front-end electronics and of DNW diodes, laser stimulation of the sensors and tests with 55Fe and 90Sr radioactive sources. This paper reviews the measurement results, their relation with the damage mechanisms underlying performance degradation and provides a new comparison between DNW devices and MAPS fabricated in a CMOS process with high resistivity (1 kΩ cm) epitaxial layer.

Published
2013

25. PFM2: A 32 × 32 processor for X-ray diffraction imaging at FELs

Author

Maurizio Boscardin, Marcello Giorgi, Giulia Casarosa, Lodovico Ratti, Hesong Xu, Lucio Pancheri, M. E. A. Benkechcache, Fabio Morsani, G. Batignani, Antonio Paladino, Giovanni Verzellesi, Sabina Ronchin, Valerio Re, G. Rizzo, Piero Malcovati, Gianluca Traversi, F. Forti, Massimo Manghisoni, Lorenzo Fabris, S. Bettarini, C. Vacchi, G.-F. Dalla Betta, L. Lodola, Eugenio Paoloni, and Marco Grassi

Subjects
Physics, 010308 nuclear & particles physics, Preamplifier, business.industry, Amplifier, Electrical engineering, Signal compression, Instrumentation for FEL, Chip, 01 natural sciences, Signal, Front-end electronics for detector readout, Instrumentation, Mathematical Physics, Settore ING-INF/01 - Elettronica, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, CMOS, Application-specific integrated circuit, Filter (video), 0103 physical sciences, business
Abstract

This work is concerned with the design of a readout chip for application to experiments at the next generation X-ray Free Electron Lasers (FEL). The ASIC, named PixFEL Matrix (PFM2), has been designed in a 65 nm CMOS technology and consists of 32 × 32 pixels. Each cell covers an area of 110 × 110 μm2 and includes a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaper used to process the preamplifier output signal, a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) and digital circuitry for channel control and data readout. Two different solutions for the readout channel, based on different versions of the time-variant filter, have been integrated in the chip. Both solutions can be operated in such a way to cope with the high frame rate (exceeding 1 MHz) foreseen for future X-ray FEL machines. The ASIC will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager. This work has been carried out in the frame of the PixFEL project funded by Istituto Nazionale di Fisica Nucleare (INFN), Italy.

Published
2016

26. The PixFEL project: Progress towards a fine pitch X-ray imaging camera for next generation FEL facilities

Author

Fabio Morsani, Lodovico Ratti, F. Forti, Gianluca Traversi, Massimo Manghisoni, S. Bettarini, Antonio Paladino, Giovanni Verzellesi, C. Vacchi, G.-F. Dalla Betta, Marco Grassi, Giulia Casarosa, G. Batignani, M. A. Benkechkache, Piero Malcovati, Eugenio Paoloni, Lucio Pancheri, Valerio Re, Lorenzo Fabris, L. Lodola, Daniele Comotti, G. Rizzo, Roberto Mendicino, and Hesong Xu

Subjects
Nuclear and High Energy Physics, Instrumentation for FEL, Solid state detectors, X-ray detectors, Instrumentation, Image processing, 01 natural sciences, Settore ING-INF/01 - Elettronica, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, 0103 physical sciences, Wide dynamic range, Physics, Interconnection, Pixel, 010308 nuclear & particles physics, business.industry, Electrical engineering, Burst mode (photography), Frame rate, Chip, CMOS, business
Abstract

The INFN PixFEL project is developing the fundamental building blocks for a large area X-ray imaging camera to be deployed at next generation free electron laser (FEL) facilities with unprecedented intensity. Improvement in performance beyond the state of art in imaging instrumentation will be explored adopting advanced technologies like active edge sensors, a 65 nm node CMOS process and vertical integration. These are the key ingredients of the PixFEL project to realize a seamless large area focal plane instrument composed by a matrix of multilayer four-side buttable tiles. In order to minimize the dead area and reduce ambiguities in image reconstruction, a fine pitch active edge thick sensor is being optimized to cope with very high intensity photon flux, up to 104 photons per pixel, in the range from 1 to 10 keV. A low noise analog front-end channel with this wide dynamic range and a novel dynamic compression feature, together with a low power 10 bit analog to digital conversion up to 5 MHz, has been realized in a 110 μm pitch with a 65 nm CMOS process. Vertical interconnection of two CMOS tiers will be also explored in the future to build a four-side buttable readout chip with high density memories. In the long run the objective of the PixFEL project is to build a flexible X-ray imaging camera for operation both in burst mode, like at the European X-FEL, or in continuous mode with the high frame rates anticipated for future FEL facilities.

Published
2016

27. In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs

Author

Piero Malcovati, Roberto Mendicino, Giulia Casarosa, Valerio Re, Saida Latreche, G.-F. Dalla Betta, Marco Grassi, Fabio Morsani, Hesong Xu, G. Rizzo, Daniele Comotti, Lodovico Ratti, Lucio Pancheri, Antonio Paladino, Giovanni Verzellesi, Gianluca Traversi, G. Batignani, F. Forti, L. Lodola, Lorenzo Fabris, Eugenio Paoloni, M. A. Benkechkache, Massimo Manghisoni, S. Bettarini, and C. Vacchi

Subjects
Nuclear and High Energy Physics, In-pixel conversion, 02 engineering and technology, 01 natural sciences, Settore ING-INF/01 - Elettronica, law.invention, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Microelectronics, ADC, CMOS, XFEL, Instrumentation, Physics, Pixel, 010308 nuclear & particles physics, business.industry, 020208 electrical & electronic engineering, Detector, Free-electron laser, Successive approximation ADC, Laser, business, Communication channel
Abstract

This work presents the design of an interleaved Successive Approximation Register (SAR) ADC, part of the readout channel for the PixFEL detector. The PixFEL project aims at substantially advancing the state-of-the-art in the field of 2D X-ray imaging for applications at the next generation Free Electron Laser (FEL) facilities. For this purpose, the collaboration is developing the fundamental microelectronic building blocks for the readout channel. This work focuses on the design of the ADC carried out in a 65 nm CMOS technology. To obtain a good tradeoff between power consumption, conversion speed and area occupation, an interleaved SAR ADC architecture was adopted.

Published
2016

28. 65 nm CMOS analog front-end for pixel detectors at the HL-LHC

Author

Gianluca Traversi, Lodovico Ratti, Valerio Re, F. De Canio, Massimo Manghisoni, and Luigi Gaioni

Subjects
Physics, Comparator, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, Preamplifier, business.industry, Amplifier, Detector, Electrical engineering, Chip, 01 natural sciences, Settore ING-INF/01 - Elettronica, Particle detector, Analog front-end, Analogue electronic circuits, Front-end electronics for detector readout, Instrumentation, Mathematical Physics, CMOS, 0103 physical sciences, 010306 general physics, business
Abstract

This work is concerned with the design and the experimental characterization of analog front-end electronics conceived for experiments with unprecedented particle rates and radiation levels at future high-energy physics colliders. A prototype chip integrating different test structures has been submitted in the framework of the CHIPIX65 project. These structures are standalone channels for the readout of hybrid pixels, featuring a charge sensitive preamplifier as the first stage of the readout chain, a high-speed comparator and a circuit for fine threshold tuning. The paper thoroughly discusses the results, mainly focused on the charge sensitive amplifier, coming from the characterization of the submitted test structures.

Published
2016

29. Geiger-mode Avalanche Pixels in 180 nm HV CMOS Process for a Dual-layer Particle Detector

Author

Paolo Brogi, A. Ficorella, G. Collazuol, P. S. Marrocchesi, C. Vacchi, G.-F. Dalla Betta, A. Savoy-Navarro, Fabio Morsani, M. Musacci, Lucio Pancheri, L. Lodola, and Lodovico Ratti

Subjects
Materials science, 010308 nuclear & particles physics, business.industry, Detector, High voltage, Chip, 01 natural sciences, Particle detector, 030218 nuclear medicine & medical imaging, law.invention, 03 medical and health sciences, 0302 clinical medicine, CMOS, Single-photon avalanche diode, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Geiger counter, Optoelectronics, Breakdown voltage, business
Abstract

The main purpose of this work is to investigate the characteristics of a 180nm CMOS technology with high voltage (HV) option in view of the fabrication of a dual-tier, low material budget sensor for charged particle detection. For this purpose, an array of avalanche pixels has been designed. The array includes sensors with a pitch of 50μmx100μm, different sizes (20μmx20μm, 30μmx30μm and 40μmx36μm) and different process layers. Active and passive quenching techniques to suppress the avalanche have been implemented in the front-end electronics, which is integrated in the same substrate as the sensor. The paper presents the results from the characterization of the test chip in terms of breakdown voltage and dark count rate (DCR).

Published
2016

30. Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC

Author

Massimo Manghisoni, Scott Thomas, J. Christiansen, Fabrizio Palla, Dario Gnani, T. Kishishita, L. Tomasek, C. Vacchi, Nicola Bacchetta, F. Munoz, Guido Magazzu, Vaclav Vrba, Nigel Hessey, T. Liu, D. Fougeron, P. Pangaud, Gianluca Traversi, Lodovico Ratti, D. Gajanana, F. E. Rarbi, R. Beccherle, F. Licciulli, Miguel Aguirre, Alexander Grillo, Alessandro Paccagnella, M. Garcia-Sciveres, Marco Bomben, F. R. Palomo, V. Zivkovic, L. Pacher, A. Wang, F. Gensolen, E. Conti, Daniele Passeri, G. Marchiori, P. Rymaszewski, Konstantin Toms, P. Valerio, Steven Bell, M.L. Prydderch, J. Wyss, L. Linssen, G. M. Bilei, Alberto Stabile, Sally Seidel, A. Rivetti, Seyed Ruhollah Shojaii, Luca Fanucci, Fabio Morsani, M. Minuti, J.N. De Witt, R. Gaglione, N. Demaria, Ivan Vila, B. Nodari, G. De Robertis, Cristoforo Marzocca, Francesco Corsi, V. Gromov, A. Mekkaoui, F. Loddo, Daniele Comotti, R. Bellazzini, F. De Canio, Pisana Placidi, Duccio Abbaneo, M. Da Rocha Rolo, Norbert Wermes, Hans Krueger, E. Monteil, S. Godiot, Valentino Liberali, V. Kafka, Luigi Gaioni, M. Marcisovsky, Tomasz Hemperek, Mauro Menichelli, D. Dzahini, Andrea Neviani, Richard B. Lipton, G. Calderini, G. Mazza, M. Karagounis, Martin Hoeferkamp, Laura Gonella, D. Vogrig, Marta Bagatin, A. Rizzi, F. Ciciriello, Farah Fahim, N. Alipour Tehrani, R. Kluit, Valerio Re, I. V. Gorelov, O. Le Dortz, Daniel Dobos, L. Ding, Konstantin Androsov, A. Paterno, J. Hoff, S. Marconi, A. Andreazza, S. Poulios, Sergio Saponara, G. Neue, Dario Bisello, Mohsine Menouni, Miroslav Havranek, Fabian Huegging, Serena Mattiazzo, Piero Giubilato, Francesco Crescioli, G. Della Casa, D. C. Christian, Petr Sicho, Marlon Barbero, Tom Zimmerman, Simone Gerardin, Alexandre Rozanov, Heinz Pernegger, Z. Janoska, Dominik Dannheim, E. Lopez-Morillo, Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE), Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Pierre et Marie Curie - Paris 6 (UPMC), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Annecy de Physique des Particules (LAPP), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), RD53 Collaboration, and Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Computer science, VLSI circuits, 01 natural sciences, Settore ING-INF/01 - Elettronica, Front and back ends, Analog front-end, Front-end electronics for detector readout, 0103 physical sciences, [PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], Particle tracking detectors (Solid-state detectors), Radiation-hard electronics, Instrumentation, Mathematical Physics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Detectors and Experimental Techniques, 010306 general physics, Digital electronics, Very-large-scale integration, Large Hadron Collider, Pixel, 010308 nuclear & particles physics, business.industry, Electrical engineering, Chip, CMOS, business
Abstract

International audience; This paper is a review of recent progress of RD53 Collaboration. Results obtained onthe study of the radiation effects on 65 nm CMOS have matured enough to define first strategies toadopt in the design of analog and digital circuits. Critical building blocks and analog very frontend chains have been designed, tested before and after 5–800 Mrad. Small prototypes of 64 64pixels with complex digital architectures have been produced, and point to address the main issuesof dealing with extremely high pixel rates, while operating at very small in-time thresholds in theanalog front end. The collaboration is now proceeding at full speed towards the design of a largescale prototype, called RD53A, in 65 nm CMOS technology

Published
2016

31. A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs

Author

M. A. Benckechkache, Fabio Morsani, Massimo Manghisoni, S. Bettarini, Valerio Re, F. Forti, C. Vacchi, Marco Grassi, Lodovico Ratti, E. Paoloni, Roberto Mendicino, Hesong Xu, Lorenzo Fabris, G. Rizzo, Lucio Pancheri, G. Batignani, Daniele Comotti, G.-F. Dalla Betta, L. Lodola, Antonio Paladino, Giovanni Verzellesi, Giulia Casarosa, Piero Malcovati, and Gianluca Traversi

Subjects
Physics, Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, business.industry, Dynamic range, Free-electron laser, Frame rate, Radiology, Nuclear Medicine and Imaging, Instrumentation, Settore ING-INF/01 - Elettronica, CMOS, Logic gate, Nuclear Medicine and Imaging, Optoelectronics, Photonics, business, Radiology, Energy (signal processing), Communication channel
Abstract

This work presents the characterization results of the first prototype of a readout channel for silicon pixel detectors, developed by the PixFEL collaboration in view of future X-ray Free Electron Laser (FEL) applications. The circuit, fabricated in a 65 nm CMOS technology by TSMC, has been designed to deal with a maximum input signal of 104 photons with energy from 1 keV to 10 keV, by exploiting a non-linear technique implemented at front-end level. Moreover, it has been envisioned for operation with the demanding frame rates of next generation FEL facilities, which can reach a few MHz. This paper presents results from measurements performed on the building blocks of the readout processor, along with a summary of the overall performance of the complete readout channel.

Published
2016

32. PFM2: A 32×32 readout chip for the PixFEL X-ray imager demonstrator

Author

Giulia Casarosa, Antonio Paladino, Giovanni Verzellesi, E. Paoloni, Piero Malcovati, Daniele Comotti, G. Batignani, Hesong Xu, Fabio Morsani, Roberto Mendicino, M. A. Benkechkache, Marco Grassi, Massimo Manghisoni, S. Bettarini, G.-F. Dalla Betta, L. Lodola, Gianluca Traversi, C. Vacchi, Lorenzo Fabris, Valerio Re, Lucio Pancheri, F. Forti, Lodovico Ratti, and G. Rizzo

Subjects
Nuclear and High Energy Physics, Preamplifier, 02 engineering and technology, 01 natural sciences, Settore ING-INF/01 - Elettronica, Dot pitch, Nuclear Medicine and Imaging, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic, Optical and Magnetic Materials, Instrumentation, Physics, 010308 nuclear & particles physics, business.industry, Dynamic range, 020208 electrical & electronic engineering, Detector, Electrical engineering, Chip, Radiology, Nuclear Medicine and Imaging, Electronic, Optical and Magnetic Materials, CMOS, Filter (video), Optoelectronics, Photonics, business, Radiology
Abstract

A readout chip, consisting of 32×32 square cells, has been designed in a 65 nm CMOS technology. The circuit will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager, envisaged for applications to experiments at the next generation X-ray FELs. The pixel pitch is 110 μm, for a total area of about 16 mm2. Different solutions for the readout channel, which includes a charge preamplifier, a time-variant filter and a 10 bit ADC, have been integrated in the chip. In particular, a couple of different versions for the time-variant processor have been implemented. The charge preamplifier is provided with four different gain settings, therefore improving the system capability to comply with photon energies in the 1 keV to 10 keV interval. This work, besides discussing in detail the readout channel and array architecture, will present the first results from the chip characterization.

Published
2016

33. Characterization of bandgap reference circuits designed for high energy physics applications

Author

Serena Mattiazzo, Valerio Re, F. De Canio, E. Riceputi, Gianluca Traversi, Luigi Gaioni, Massimo Manghisoni, and Lodovico Ratti

Subjects
Nuclear and High Energy Physics, Bandgap voltage reference, Radiation effects, Deep submicron, CMOS, Line regulation, Settore ING-INF/01 - Elettronica, 01 natural sciences, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, 0103 physical sciences, MOSFET, Silicon bandgap temperature sensor, Instrumentation, Diode, Physics, 010308 nuclear & particles physics, business.industry, Bipolar junction transistor, Optoelectronics, business, Voltage reference
Abstract

The objective of this work is to design a high performance bandgap voltage reference circuit in a standard commercial 65 nm CMOS technology capable of operating in harsh radiation environments. A prototype circuit based on three different devices (diode, bipolar transistor and MOSFET) was fabricated and tested. Measurement results show a temperature variation as low as ±3.4 mV over a temperature range of 170 ° C (−30 °C to 140 °C) and a line regulation at room temperature of 5.2%/V. Measured V REF is 690 mV±15 mV (3 σ ) for 26 samples on the same wafer. Circuits correctly operate with supply voltages in the range from 1.32 V down to 0.78 V. A reference voltage shift of only 7.6 mV (around 1.1%) was measured after irradiation with 10 keV X-rays up to an integrated dose of 225 Mrad (SiO 2 ).

Published
2016

34. Crosstalk mapping in CMOS SPAD arrays

Author

A. Ficorella, Lucio Pancheri, G.-F. Dalla Betta, A. Savoy-Navarro, Fabio Morsani, Lodovico Ratti, G. Collazuol, P. S. Marrocchesi, and Paolo Brogi

Subjects
pixelated sensor, Avalanche diode, Materials science, business.industry, CMOS, Biasing, 02 engineering and technology, Optical crosstalk, Single-Photon Avalanche Diode, 020210 optoelectronics & photonics, Planar, Optics, Silicon photomultiplier, Single-photon avalanche diode, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Wafer, Photonics, business
Abstract

Optical crosstalk is one of the main factors limiting the performance of Single-Photon Avalanche Diode (SPAD) arrays and Silicon Photomultipliers (SiPMs). In this paper, a set of crosstalk measurements on a CMOS SPAD pixel array with 50µm × 75µm pitch and 51.6% Fill Factor, designed for direct particle detection, is reported. Measurements were performed on dies with different thickness: 280µm, 50µm and 25µm. The dependence of crosstalk on excess bias voltage and distance between pairs of pixels is presented and its overall effect on the Dark Count Rate (DCR) distribution of the array is discussed. Results show a strong dependence of crosstalk coefficient on substrate thickness, confirming the role of photon reflection on the wafer backside surface. In thinned devices, the silicon substrate acts as a planar waveguide, increasing the transmission efficiency of secondary photons and greatly enhancing long-distance optical crosstalk.

Published
2016

35. The SLIM5 low mass silicon tracker demonstrator

Author

Marco Bruschi, Laura Fabbri, A. Profeti, R. Spighi, M. Piendibene, Alberto Lusiani, D. Jugovaz, D. Gamba, Valerio Re, Eugenio Paoloni, Alberto Cervelli, C. Avanzini, G. Pellegrini, Irina Rashevskaya, G. Marchiori, G.-F. Dalla Betta, Lodovico Ratti, G. Rizzo, Mario Giorgi, B. Giacobbe, G. Fontana, Gianluca Traversi, Filippo Bosi, M. Bomben, G. Batignani, J. J. Walsh, L. Vitale, P. Mereu, M. Dell'Orso, S. Gregucci, Filippo Maria Giorgi, F. Forti, Eugene Yurtsev, R. Cenci, Fabio Morsani, G. Giraudo, Nicola Neri, Alessandro Gabrielli, N. Semprini, Paola Giannetti, V. Speziali, G. Venier, Mauro Villa, G. Giacomini, Francesco Crescioli, Sara Valentinetti, M. Ceccanti, L. Sartori, Carla Sbarra, M. Massa, Luciano Bosisio, Antonio Zoccoli, P. Mammini, L. Lanceri, R. Di Sipio, P. Cristaudo, Giovanni Soncini, Massimo Manghisoni, S. Bettarini, Luigi Gaioni, Bomben, Marco, Bosisio, Luciano, Giacomini, Gabriele, Lanceri, Livio, I., Rachevskaia, Vitale, Lorenzo, SLIM5 Collaboration, et a. l., S. Bettarini, L. Ratti, G. Rizzo, M. Villa, L. Vitale, J. Walsh, C. Avanzini, G. Batignani, F. Bosi, M. Ceccanti, R. Cenci, A. Cervelli, F. Crescioli, M. Dell'Orso, F. Forti, P. Giannetti, M.A. Giorgi, A. Lusiani, S. Gregucci, P. Mammini, G. Marchiori, M. Massa, F. Morsani, N. Neri, E. Paoloni, M. Piendibene, A. Profeti, L. Sartori, E. Yurtsev, L. Gaioni, V. Speziali, M. Bruschi, R. Di Sipio, L. Fabbri, B. Giacobbe, A. Gabrielli, F. Giorgi, G. Pellegrini, C. Sbarra, N. Semprini, R. Spighi, S. Valentinetti, A. Zoccoli, M. Bomben, L. Bosisio, P. Cristaudo, G. Giacomini, D. Jugovaz, L. Lanceri, I. Rashevskaya, G. Venier, M. Manghisoni, V. Re, G. Traversi, D. Gamba, G. Giraudo, P. Mereu, G.F. Dalla Betta, G. Soncini, and G. Fontana

Subjects
Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, Integrated circuit, STRIPS, Settore ING-INF/01 - Elettronica, law.invention, Telescope, Data acquisition, Optics, law, MAPS, Instrumentation, Image resolution, CMOS pixel, Charged particle tracking, Physics, Monolithic active pixel sensor, business.industry, Monolithic active pixel sensors, CMOS pixels, Striplets, Striplet detector, Striplet, Detector, Chip, CMOS, Optoelectronics, business
Abstract

A low material budget silicon demonstrator has been tested by the SLIM5 collaboration with 12 GeV/ c protons at the PS-T9 beam line at CERN. Two devices were placed inside a reference telescope and their characteristics were measured. The first was a 4k-Pixel Matrix of Deep N Well MAPS, developed in a 130 nm CMOS technology, providing digital sparsified readout. The other one was a high resistivity double-sided silicon detector, with short strips at a 45 ∘ angle to the detector's edge, read out by the FSSR2 chip. In this paper we describe the main features of both sensors. The primary goal of the test was to measure the efficiency and the resolution of the DUTs under different conditions of threshold setting and incident angle of the impinging particles. The data-driven approach of the readout chips has been fully exploited by the DAQ system to take data with a track-based level-1 trigger provided by a pattern matching algorithm with very low latency.

Published
2010

36. TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors

Author

E. Pozzati, C. Andreoli, Gianluca Traversi, Luigi Gaioni, Valerio Re, Massimo Manghisoni, and Lodovico Ratti

Subjects
Nuclear and High Energy Physics, Materials science, sensors, Settore ING-INF/01 - Elettronica, law.invention, Analog front-end, law, analog front-end, CMOS, deep N-well, ionizing radiation, MAPS, Radiation, Electrical and Electronic Engineering, Microelectronics, Radiation hardening, Diode, business.industry, Pulse generator, Transistor, Nuclear Energy and Engineering, radiation damage, Absorbed dose, microelectronics, Optoelectronics, business
Abstract

This paper is devoted to the study of total ionizing dose effects in deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) for particle tracking fabricated in a STMicroelectronics 130 nm process. DNW-MAPS samples were exposed to gamma-rays up to a final dose of 1100 krad(SiO2) and then subjected to a 100degC annealing cycle. Ionizing radiation tolerance was tested by monitoring the device noise properties and its response to charge injection through an external pulse generator throughout the irradiation and annealing campaign. The origins of performance degradation are discussed based on the results from radiation hardness characterization of single transistors belonging to the same CMOS technology and of test diodes reproducing the MAPS collecting electrode structure. Also circuit simulations have been performed to supply further evidence for the proposed degradation mechanisms.

Published
2009

37. Recent developments in 130 nm CMOS monolithic active pixel detectors

Author

Lodovico Ratti, A. Lusiani, P. Mereu, J. J. Walsh, Giovanni Verzellesi, G. Giraudo, Nicola Neri, R. Spighi, L. Vitale, V. Speziali, Mauro Dell'Orso, Paola Giannetti, Mauro Villa, Filippo Bosi, C. Andreoli, Valerio Re, G. Giacomini, N. Semprini, G. Calderini, L. Bosisio, F. Forti, Luigi Gaioni, G. Rizzo, S. Bettarini, Gianluca Traversi, Fabio Morsani, Alessandro Gabrielli, Antonio Zoccoli, Marco Bruschi, Massimo Manghisoni, L. Lanceri, E. Paoloni, E. Pozzati, Diego Gamba, G. Marchiori, R. Cenci, Mario Giorgi, B. Giacobbe, G. Batignani, and I. Rachevskaia

Subjects
Nuclear and High Energy Physics, Engineering, Signal processing, Pixel, business.industry, Preamplifier, Clock rate, Detector, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Analog signal processing, Noise figure, Settore ING-INF/01 - Elettronica, Atomic and Molecular Physics, and Optics, CMOS, Electronic engineering, MAPS, Active pixel detectors, SLIM5, Optoelectronics, business
Abstract

We developed monolithic active pixel detectors, by exploiting the triple well option available in a deep-submicron CMOS process. The novel features are the full analog signal processing and digital functionality implemented at the pixel level. The charge collecting element is realized using the deep N-well (DNW), the full in-pixel signal processing chain includes charge preamplifier, shaper, discriminator and latch. We report on the characterization of the two prototype chips, the first (APSEL0) containing single-channel sensors, with different collecting electrode area, and the latter (APSEL1) with several single pixel structures with improved noise figure implementing also an 8 × 8 matrix of 50 × 50 μm 2 pixel area. So far, the pixel matrix has a simple row by row readout, successfully tested with clock frequency up to 30 MHz. The response of the sensors to infra-red laser, β -rays and soft X-rays (from radioactive sources, 90 Sr and 55 Fe respectively) will be presented. The results achieved so far demonstrate the viability of the technology and suggest new design improvements implemented in the next prototype chips submission (APSEL2).

Published
2007

38. The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities

Author

Daniele Comotti, G.-F. Dalla Betta, Lorenzo Fabris, Gianluca Traversi, Massimo Manghisoni, S. Bettarini, C. Vacchi, Giulia Casarosa, Eugenio Paoloni, F. Forti, G. Batignani, Valerio Re, Hesong Xu, Antonio Paladino, Giovanni Verzellesi, Piero Malcovati, Lucio Pancheri, M. A. Benkechkache, Fabio Morsani, G. Rizzo, Lodovico Ratti, L. Lodola, Roberto Mendicino, and Marco Grassi

Subjects
Pixel, business.industry, Dynamic range, Computer science, Detector, Electrical engineering, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, X-ray detectors, Instrumentation for FEL, Solid state detectors, Frame rate, Chip, Settore ING-INF/01 - Elettronica, Dot pitch, CMOS, business, Instrumentation, Mathematical Physics, Computer hardware, High dynamic range
Abstract

The PixFEL project aims to develop an advanced X-ray camera for imaging suited for the demanding requirements of next generation free electron laser (FEL) facilities. New technologies can be deployed to boost the performance of imaging detectors as well as future pixel devices for tracking. In the first phase of the PixFEL project, approved by the INFN, the focus will be on the development of the microelectronic building blocks, carried out with a 65 nm CMOS technology, implementing a low noise analog front-end channel with high dynamic range and compression features, a low power ADC and high density memory. At the same time PixFEL will investigate and implement some of the enabling technologies to assembly a seamless large area X-ray camera composed by a matrix of multilayer four-side buttable tiles. A pixel matrix with active edge will be developed to minimize the dead area of the sensor layer. Vertical interconnection of two CMOS tiers will be explored to build a four-side buttable readout chip with small pixel pitch and all the on-board required functionalities. The ambitious target requirements of the new pixel device are: single photon resolution, 1 to 104 photons @ 1 keV to 10 keV input dynamic range, 10-bit analog to digital conversion up to 5 MHz, 1 kevent in-pixel memory and 100 μm pixel pitch. The long term goal of PixFEL will be the development of a versatile X-ray camera to be operated either in burst mode (European XFEL), or in continuous mode to cope with the high frame rates foreseen for the upgrade phase of the LCLS-II at SLAC.

Published
2015

39. PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs

Author

Valerio Re, Piero Malcovati, L. Lodola, Massimo Manghisoni, Giulia Casarosa, S. Bettarini, Marco Grassi, Roberto Mendicino, Gianluca Traversi, F. Forti, G. Rizzo, C. Vacchi, Lucio Pancheri, Hesong Xu, Lorenzo Fabris, Antonio Paladino, G.-F. Dalla Betta, Giovanni Verzellesi, Fabio Morsani, Daniele Comotti, Lodovico Ratti, M. A. Benkechkache, and Eugenio Paoloni

Subjects
Physics, Active edge detectors, Low noise readout, Nuclear and High Energy Physics, business.industry, X-ray FELs, CMOS deep submicron, Instrumentation, Detector, Free-electron laser, Laser, Settore ING-INF/01 - Elettronica, Field (computer science), law.invention, law, Electronic engineering, Microelectronics, Instrumentation (computer programming), Focus (optics), business, Communication channel
Abstract

The PixFEL project is conceived as the first stage of a long term research program aiming at the development of advanced X-ray imaging instrumentation for applications at the free electron laser (FEL) facilities. The project aims at substantially advancing the state-of-the-art in the field of 2D X-ray imaging by exploring cutting-edge solutions for sensor development, for integration processes and for readout channel architectures. The main focus is on the development of the fundamental microelectronic building blocks for detector readout and on the technologies for the assembly of a multilayer module with minimum dead area. This work serves the purpose of introducing the main features of the project, together with the simulation results leading to the first prototyping run.

Published
2015

40. Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

Author

Saida Latreche, Daniele Comotti, G. Rizzo, Antonio Paladino, Giovanni Verzellesi, Fabio Morsani, Lorenzo Fabris, M. A. Benkechkache, L. Lodola, Giulia Casarosa, Lodovico Ratti, Massimo Manghisoni, S. Bettarini, Hesong Xu, C. Vacchi, Eugenio Paoloni, Valerio Re, G. Batignani, G.-F. Dalla Betta, F. Forti, Lucio Pancheri, Marco Grassi, Gianluca Traversi, Piero Malcovati, and Roberto Mendicino

Subjects
Physics, Nuclear and High Energy Physics, Pixel, 010308 nuclear & particles physics, Detector, Breakdown voltage, Silicon detectors, Active edges, TCAD simulations, Settore ING-INF/01 - Elettronica, 01 natural sciences, Particle detector, 030218 nuclear medicine & medical imaging, Semiconductor detector, 03 medical and health sciences, 0302 clinical medicine, Planar, 0103 physical sciences, Electronic engineering, Measuring instrument, Instrumentation, Technology CAD
Abstract

We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.

Published
2015

41. Impact of low-dose electron irradiation on n+p silicon strip sensors

Author

S. Michelis, Joshua Thompson, A. Kuensken, Gaelle Boudoul, Alexis Kalogeropoulos, Ivan Vila, Adrian Perieanu, S. Mättig, N. Van Remortel, Kevin Stenson, P. Verdier, C. Barth, Achim Stahl, Malte Hoffmann, Carlo Civinini, M. Olmedo, Jean-Marie Brom, T. Nussbaum, Wolfgang Lange, Duncan Leggat, Panja-Riina Luukka, Caleb Fangmeier, Roberto Ciaranfi, Alex Garabedian, R. Gonzalez Suarez, Richard Lander, J. Nelson, Gregor Mittag, Jennifer Chu, T. du Pree, J. Gray, Liliana Teodorescu, Marko Dragicevic, Willard Johns, Po-Hsun Chen, Stefano Mersi, Ievgen Korol, M. Lo Vetere, Simone Gennai, Umesh Joshi, Simon Spannagel, K. Bösiger, Laurent Mirabito, Steven Lowette, H. Maser, GN Kaufman, Rachel Yohay, T. Pakulski, M. Kovacs, T. Barvich, James Alexander, Doris Eckstein, J. Watson-Daniels, Gaia Maria Berruti, Stefano Casasso, G. Schwering, A. K. Honma, Salvatore Rappoccio, Loukas Gouskos, Stephen Robert Wagner, Ferdinando Giordano, Jordan Tucker, Th. Müller, Matthieu Marionneau, Arne-Rasmus Draeger, Alexander Dierlamm, P. Van Mulders, M. Printz, Stefan Michael Heindl, Xavier Janssen, M. Salvatore, L. M. Cremaldi, Michele Selvaggi, Clemens Lange, Mia Tosi, Satoshi Hasegawa, R. Stringer, Mark Grimes, S. Mallows, B. Baldin, Ping Tan, Mark Pesaresi, H. Yin, J. Swanson, Urs Langenegger, Martino Dall'Osso, Hallie Trauger, P. Steck, A. Prosser, John Gabriel Acosta, A. Tropiano, R. Wilken, Tommaso Dorigo, Sandra Malvezzi, P. Tropea, Alberto Zucchetta, Gregor Kasieczka, Marco Meschini, Andrei Starodumov, B. Nodari, Roberto Castello, C. Vander Velde, David Mark Raymond, Christophe Delaere, Lodovico Ratti, Jose Monroy, David Fehling, Ian R Tomalin, Gino Bolla, Marco Costa, M. De Palma, Attilio Santocchia, Jeson Jacob, Tuure Tuuva, J. Chramowicz, Ryan Rivera, M. Hrycyk, F. Kahlid, Andrew Ivanov, Daniela Bortoletto, L. Kottelat, L. Perera, Xin Shi, Piero Giubilato, S. Pavis, Stephen Sanders, Daniel Bloch, Avraham Yagil, Peter R Hobson, M. Hoch, Angelo Rivetti, P. Martinez Ruiz del Arbol, Tobias Lapsien, Ch Henkel, Oliver Pooth, David Sabes, Anders Ryd, G. De Lentdecker, D. C. Christian, Daniel Pitzl, A. Kumar, Vivek Sharma, Adrien Caudron, Giuseppe Benedetto Cerati, Gianluca Petrillo, F. Loddo, E. Salvati, Johannes Haller, T. Weiler, Giorgio Maggi, P. Vichoudis, Janna Katharina Behr, Frank Raupach, Philip Harris, I. De Bruyn, Michael Krohn, Ulysses Grundler, E. Conti, H. Postema, Charles Dietz, M. Schroeder, Renato Potenza, Guenter Eckerlin, Annik Olbrechts, Paula Eerola, G. Beaulieu, F.J. Gonzalez Sanchez, Daniele Pedrini, Hadi Behnamian, J. Thomson, Susan Dittmer, Gigi Cappello, Ivan Reid, Anastasia Grebenyuk, Ijaz Ahmed, Dmitry Hits, L. Charles, Ernesto Migliore, Hans-Jürgen Simonis, Andreas Mussgiller, Ali Harb, Felix Bachmair, D. I. Sandoval Gonzalez, Hanno Perrey, Konrad Deiters, Teppo Mäenpää, Didar Dobur, Fabio Ravera, N. Frank, M. Miñano Moya, G. Fluegge, G. Blanchot, Alessandra Romero, W. 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Combaret, Loriano Storchi, Luisa Alunni Solestizi, Alessia Tricomi, Jaakko Härkönen, Markus Stoye, Institut de Physique Nucléaire de Lyon (IPNL), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Institut Pluridisciplinaire Hubert Curien (IPHC), Université de Strasbourg (UNISTRA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), CMS, Adam, W, Bergauer, T, Dragicevic, M, Friedl, M, Fruehwirth, R, Hoch, M, Hrubec, J, Krammer, M, Treberspurg, W, Waltenberger, W, Alderweireldt, S, Beaumont, W, Janssen, X, Luyckx, S, Van Mechelen, P, Van Remortel, N, Van Spilbeeck, A, Barria, P, Caillol, C, Clerbaux, B, De Lentdecker, G, Dobur, D, Favart, L, Grebenyuk, A, Lenzi, T, Leonard, A, Maerschalk, T, Mohammadi, A, Pernie, L, Randle-Conde, A, Reis, 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R, Walker, M, Malik, S, Mendez, H, Ramirez Vargas, J, Alyari, M, Dolen, J, George, J, Godshalk, A, Iashvili, I, Kaisen, J, Kharchilava, A, Rappoccio, S, Alexander, J, Chaves, J, Chu, J, Dittmer, S, Kaufman, G, Mirman, N, Ryd, A, Salvati, E, Skinnari, L, Thom, J, Thompson, J, Tucker, J, Winstrom, L, Akgun, B, Ecklund, K, Nussbaum, T, Zabel, J, Betchart, B, Demina, R, Hindrichs, O, Petrillo, G, Eusebi, R, Osipenkov, I, Perloff, A, Ulmer, K, Delannoy, A, D'Angelo, P, Johns, W, Physics, Elementary Particle Physics, Helsinki Institute of Physics, Department of Physics, CMS Collaboration, UCL - SST/IRMP - Institut de recherche en mathématique et physique, European Commission, Bundesministerium für Bildung und Forschung (Deutschland), European Organization for Nuclear Research, The European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025., and Federal Ministry of Education and Research (Germany)

Subjects
Physics - Instrumentation and Detectors, Annealing (metallurgy), Surface damage, Analytical chemistry, ComputingMilieux_LEGALASPECTSOFCOMPUTING, Settore ING-INF/01 - Elettronica, 7. Clean energy, damage [radiation], Charge sharing, Charge collection, Radiation damage, Silicon strip sensors, Nuclear and High Energy Physics, Instrumentation, Ionization, Detectors and Experimental Techniques, ComputingMilieux_MISCELLANEOUS, Physics, yield [charge], CMS, microstrip [semiconductor detector], Charge density, Instrumentation and Detectors (physics.ins-det), electric field, Chemistry, RADIATION-DAMAGE, Physique des particules élémentaires, Silicon strip sensor, oxygen [silicon], CHARGE, Engineering sciences. Technology, irradiation [electron], Silicon, PIXEL, education, FOS: Physical sciences, chemistry.chemical_element, density [charge], Radiation, 114 Physical sciences, Nuclear physics, Electric field, DETECTORS, Electron beam processing, ddc:530, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], numerical calculations, temperature dependence [damage], Hadron-Hadron Scattering, hep-ex, FISICA DELLE PARTICELLE, Physics and Astronomy, chemistry, Data_GENERAL, spatial distribution [electric field], Beyond standard model
Abstract

Under a Creative Commons license., The Tracker Group of the CMS Collaboration.-- et al., The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n+p strip sensors is discussed., The research leading to these results has received funding from the European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025. We are also grateful to the HGF Alliance Physics at the Terascale, which has partially funded the setup used for the measurements, and to the BMBF, the Ministry of Research and Education of the German Federal Republic, for funding the Ph.D. position of J. Erfle within the Forschungsschwerpunkt FSP-102, Elementarteilchenphysik mit dem CMS-Experiment., Open Access funded by CERN.

Published
2015

42. Radiation damage studies for the BaBar Silicon Vertex Tracker

Author

Wolfgang Walkowiak, A. Perazzo, L. Vitale, S. Kyre, J. Beringer, J. J. Walsh, J. W. Berryhill, G. Rizzo, C. H. Cheng, G. Zizka, G. Delia Ricca, Gabriele Simi, Luciano Bosisio, Andrei Gritsan, E. Mandelli, L. Piemontese, A. Mihalyi, D. Kirkby, Francesco Lanni, J. Stoner, A. B. Breon, E. Paoloni, Nicola Neri, C. Roat, A. M. Eisner, F. Bucci, B. Dahmes, P. Spradlin, I. Rashevskaia, P.A. Hart, T. W. Beck, F. Bianchi, Fabio Morsani, C. Borean, S. L. Levy, D. Gamba, M. A. Mazur, Alberto Lusiani, B. A. Petersen, Daniel E. Hale, Claudio Campagnari, V. Lillard, T. I. Meyer, D. N. Brown, S. Bettarini, E. Brenna, F. Forti, S. Dittongo, Natalie A. Roe, F. Goozen, M. Grothe, W. S. Lockman, G. Batignani, G. Marchiori, C. Bozzi, M. Carpinelli, G. Vuagnin, E. Charles, M. Morganti, Valerio Re, Mauro Citterio, Marcella Bona, J. D. Richman, D. Callahan, L. Lanceri, M. Bruinsma, R. Liu, S. Burke, T. Pulliam, L. T. Kerth, Lodovico Ratti, Peter Elmer, F. Palombo, G. Calderini, A. R. Clark, P.F. Manfredi, G. Lynch, S. Dardin, A. J. Edwards, Patricia R. Burchat, Owen Rosser Long, A. Seiden, M. Datta, Wouter Verkerke, M. Bondioli, F. Sandrelli, Matteo Rama, Marcello Giorgi, A. Profeti, M. G. Wilson, D. A. Roberts, Re, V, Kirkby, D, Bruinsma, M, Berryhill, J, Burke, S, Callahan, D, Campagnari, C, Dahmes, B, Hale, D, Hart, P, Kyre, S, Levy, S, Long, O, Mazur, M, Richman, J, Stoner, J, Verkerke, W, Beringer, J, Beck, T, Eisner, A, Grothe, M, Lockman, W, Pulliam, T, Seiden, A, Spradlin, P, Walkowiak, W, Wilson, M, Borean, C, Bozzi, C, Piemontese, L, Breon, A, Brown, D, Charles, E, Clark, A, Dardin, S, Goozen, F, Kerth, L, Gritsan, A, Lynch, G, Perazzo, A, Roe, N, Zizka, G, Lillard, V, Roberts, D, Brenna, E, Citterio, M, Lanni, F, Palombo, F, Ratti, L, Manfredi, P, Mandelli, E, Batignani, G, Bettarini, S, Bondioli, M, Bucci, F, Calderini, G, Carpinelli, M, Forti, F, Giorgi, M, Lusiani, A, Marchiori, G, Morganti, M, Morsani, F, Neri, N, Paoloni, E, Profeti, A, Rama, M, Rizzo, G, Sandrelli, F, Simi, G, Walsh, J, Elmer, P, Burchat, P, Cheng, C, Edwards, A, Meyer, T, Petersen, B, Roat, C, Bona, M, Bianchi, F, Gamba, D, Bosisio, L, Ricca, G, Dittongo, S, Lanceri, L, Rashevskaia, I, Vitale, L, Vuagnin, G, Datta, M, Liu, R, Mihalyi, A, Bosisio, Luciano, DELLA RICCA, Giuseppe, and Lanceri, Livio

Subjects
Silicon, Nuclear and High Energy Physics, Vertex (computer graphics), BABAR, chemistry.chemical_element, Radiation, PARTICLE PHYSICS, PEP2, Settore ING-INF/01 - Elettronica, Linear particle accelerator, Nuclear physics, TRACKER, Vertex, Optics, Radiation damage, Instrumentation, Radiation hardening, Absorbed Radiation Dose, detector, radiation, Physics, business.industry, Detector, MICROVERTEX DETECTOR, chemistry, business, Storage ring
Abstract

The Silicon Vertex Tracker of the B a B ar experiment is a five-layer, double-sided AC-coupled silicon microstrip detector operating on the PEP-II storage ring at the Stanford Linear Accelerator Center. After more than four years of running, the silicon sensors and the front-end electronics in the inner layer have absorbed radiation doses up to 2 Mrad. In this paper we present results from radiation hardness tests and discuss the implications of the absorbed radiation dose on the Silicon Vertex Tracker lifetime.

Published
2005

43. A fabrication process for silicon microstrip detectors with integrated front-end electronics

Author

G.-F.D. Betta, V. Speziali, Valerio Re, Lodovico Ratti, G. U. Pignatel, Maurizio Boscardin, L. Bosisio, Mario Giorgi, Nicola Zorzi, G. Batignani, P. Gregori, DALLA BETTA, G. F., Boscardin, M., Gregori, P., Zorzi, N., Pignatel, G. U., Batignani, G., Giorgi, M., Bosisio, Luciano, Ratti, L., Speziali, V., and Re, V.

Subjects
Nuclear and High Energy Physics, Fabrication, business.industry, Detector, Transistor, law.invention, Nuclear Energy and Engineering, law, Nuclear electronics, MOSFET, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Field-effect transistor, Electronics, Electrical and Electronic Engineering, Resistor, business
Abstract

We report on an research and development activity aimed at the fabrication of silicon microstrip detectors with integrated front-end electronics to be used in high-energy physics and space experiments and medical/industrial imaging applications. A specially tailored fabrication technology has been developed at ITC-IRST (Trento, Italy), which allows for the production of single-sided microstrip detectors, with integrated coupling capacitors and polysilicon resistors, as well as active devices, including N-channel junction field effect transistors and N- or P-channel MOS transistors. The main characteristics of the fabrication process are outlined. Experimental results from the electrical characterization of the devices are reported, showing that transistors with good electrical figures can be obtained within the proposed technology while preserving the basic detector parameters.

Published
2002

44. Feasibility studies of microelectrode silicon detectors with integrated electronics

Author

G. U. Pignatel, Francesco Svelto, Nicola Zorzi, F. Sandrelli, M. Carpinelli, Valerio Re, G. Batignani, Massimo Manghisoni, S. Bettarini, S. Dittongo, Matteo Rama, F. Forti, A. Lusiani, V. Speziali, L. Bosisio, Lodovico Ratti, Maurizio Boscardin, Mario Giorgi, G.-F. Dalla Betta, P. Gregori, Dalla Betta, G, Batignani, G, Bettarini, S, Boscardin, M, Bosisio, L, Carpinelli, M, Dittongo, S, Forti, F, Giorgi, M, Gregori, P, Lusiani, A, Manghisoni, M, Pignatel, G, Rama, M, Ratti, L, Re, V, Sandrelli, F, Speziali, V, Svelto, F, Zorzi, N, DALLA BETTA, G. F., Batignani, G., Bettarini, S., Boscardin, M., Bosisio, Luciano, Carpinelli, M., Dittongo, S., Forti, F., Giorgi, G., Gregori, P., Lusiani, A., Manghisoni, M., Pignatel, G. U., Rama, M., Ratti, L., Re, V., Sandrelli, F., Speziali, V., Svelto, F., and Zorzi, N.

Subjects
Physics, Nuclear and High Energy Physics, Fabrication, Silicon, Electrical characterisation, Fabrication technology, business.industry, Transistor, Bipolar junction transistor, Detector, Biopolar transistor, Process (computing), chemistry.chemical_element, JFET, law.invention, Microelectrode, chemistry, Silicon microstrip detector, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Field-effect device, business, Instrumentation
Abstract

We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source–follower configuration is introduced.

Published
2002

45. PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs

Author

Piero Malcovati, Valerio Re, L. Lodola, Hesong Xu, Lodovico Ratti, M. A. Benkechkache, Marco Grassi, G. Rizzo, G. Batignani, Giulia Casarosa, Roberto Mendicino, E. Paoloni, Gianluca Traversi, Lucio Pancheri, Lorenzo Fabris, Antonio Paladino, Giovanni Verzellesi, G.-F. Dalla Betta, Massimo Manghisoni, S. Bettarini, C. Vacchi, Daniele Comotti, F. Forti, and Fabio Morsani

Subjects
Nuclear and High Energy Physics, Engineering, Fabrication, Pixel, Radiology, Nuclear Medicine and Imaging, business.industry, Dynamic range, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Electrical engineering, Free-electron laser, Settore ING-INF/01 - Elettronica, Dot pitch, CMOS, Nuclear Medicine and Imaging, Electronic engineering, Microelectronics, Instrumentation (computer programming), Radiology, business
Abstract

The PixFEL project is conceived as the first stage of a long term research program aiming at the development of advanced instrumentation for coherent X-ray diffractive imaging applications at the next generation free electron laser (FEL) facilities. The project aims at substantially advancing the state-of-the-art in the field of 2D X-ray imaging through the adoption of cutting-edge microelectronic technologies and innovative design and architectural solutions. For this purpose, the collaboration is developing the fundamental microelectronic building blocks (low noise analog front-end with dynamic compression feature, high resolution, low power ADC, high density memories) and investigating and implementing the enabling technologies (active edge pixel sensors, high density and low density through silicon vias) for the assembly of a multilayer four side buttable tile. The building block design is being carried out in a 65 nm CMOS technology. The ambitious goal of the research program is the fabrication of an X-ray camera with single photon resolution, 1 to 104 photons @ 1 keV to 10 keV input dynamic range, 1 kevent in-pixel memory, 100 µm pixel pitch, and the capability to be operated at the fast (1 MHz or larger) rates foreseen for the future X-ray FEL machines.

Published
2014

46. Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications

Author

Massimo Manghisoni, S. Bettarini, C. Vacchi, Piero Malcovati, F. Forti, Giulia Casarosa, G. Rizzo, Lodovico Ratti, Lorenzo Fabris, Daniele Comotti, Gianluca Traversi, Roberto Mendicino, Antonio Paladino, Giovanni Verzellesi, Fabio Morsani, Lucio Pancheri, Hesong Xu, L. Lodola, Valerio Re, E. Paoloni, M. A. Benckechkache, G. Batignani, G.-F. Dalla Betta, and Marco Grassi

Subjects
Physics, Nuclear and High Energy Physics, Radiology, Nuclear Medicine and Imaging, Physics::Instrumentation and Detectors, business.industry, Dynamic range, Detector, Electrical engineering, Signal compression, Frame rate, Settore ING-INF/01 - Elettronica, CMOS, Nuclear Medicine and Imaging, Logic gate, Electronic engineering, Photonics, Radiology, business, Communication channel
Abstract

This work presents the design of a read-out channel suitable for application to silicon pixel detectors for the next generation Free Electron Laser (FEL) experiments. The readout architecture, which has been carried out in a 65 nm CMOS technology, consists of a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaping stage and a low-power analog-to-digital converter (ADC), hosted in a 100 µm-pitch pixel. The blocks will be operated in such a way to cope with the high frame rates (exceeding 1 MHz) foreseen for future X-ray FEL machines. The paper describes in detail the architecture and the performance of the CSA and provides an overview about the analog readout channel.

Published
2014

47. Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications

Author

Lorenzo Fabris, G. Batignani, Piero Malcovati, Valerio Re, Giulia Casarosa, Marco Grassi, F. Forti, Hesong Xu, Fabio Morsani, Gian-Franco Dalla Betta, G. Rizzo, Eugenio Paoloni, Saida Latreche-Lassoued, Lodovico Ratti, Lucio Pancheri, Daniele Comotti, Roberto Mendicino, Gianluca Traversi, M. A. Benkechkache, Massimo Manghisoni, S. Bettarini, Antonio Paladino, Giovanni Verzellesi, C. Vacchi, and L. Lodola

Subjects
Physics, Nuclear and High Energy Physics, Pixel, business.industry, Radiology, Nuclear Medicine and Imaging, Detector, Electrical engineering, Free-electron laser, Settore ING-INF/01 - Elettronica, Planar, Nuclear Medicine and Imaging, Wide dynamic range, Electronic engineering, Breakdown voltage, Photonics, business, Radiology, Voltage
Abstract

We report on the design and TCAD simulations of planar active-edge pixel sensors within the INFN PixFEL project. These devices are intended as one of the building blocks for the assembly of a multilayer, four-side buttable tile for X-ray imaging applications in future Free Electron Laser facilities. The requirements in terms of very wide dynamic range and tolerance to extremely high ionizing radiation doses call for high operation voltages. A comprehensive TCAD simulation study is presented, aimed at the best trade-offs between the minimization of the edge region size and the sensor breakdown voltage.

Published
2014

48. Quadruple Well CMOS MAPS with time-invariant processor exposed to ionizing radiation and neutrons

Author

Gianluca Traversi, Lodovico Ratti, Fabio Morsani, G. Rizzo, S. Bettarini, Luciano Bosisio, Stefano Zucca, Irina Rashevskaya, Ratti, Lodovico, Traversi, Gianluca, Zucca, Stefano, Bettarini, Stefano, Morsani, Fabio, Rizzo, Giuliana, Bosisio, Luciano, and Rashevskaya, Irina

Subjects
Nuclear and High Energy Physics, Materials science, Pixel, CMOS map, business.industry, Detector, quadruple well proce, Radiation, Tracking (particle physics), Settore ING-INF/01 - Elettronica, Ionizing radiation, CMOS, Nuclear Energy and Engineering, Optoelectronics, Neutron, Irradiation, quadruple well process, Bulk damage, CMOS maps, ionizing radiation, Electrical and Electronic Engineering, business
Abstract

Monolithic active pixel sensors featuring a time-invariant front-end channel have been fabricated in a quadruple well CMOS process in the frame of an R&D project aiming at developing low material budget, radiation hard detectors for tracking applications. MAPS prototypes have been exposed to integrated fluences up to 10^14 1 MeV neutron equivalent / cm^2 to test the device tolerance to bulk damage also for different values of the epitaxial layer resistivity. Moreover, samples of the same device have been irradiated with y-rays from a 60Co source, reaching a final dose exceeding 10 Mrad, to study ionizing radiation effects. This work discusses the test results, obtained through different measurement techniques, and the mechanisms underlying performance degradation in irradiated quadruple well CMOS MAPS.

Published
2014

49. Silicon avalanche pixel sensor for high precision tracking

Author

Fabio Morsani, A. Savoy Navarro, V. Saveliev, Qingguo Xie, Lodovico Ratti, P. S. Marrocchesi, C.S. Moon, and Nicola D'Ascenzo

Subjects
Physics - Instrumentation and Detectors, Pixel, business.industry, Computer science, Physics::Instrumentation and Detectors, FOS: Physical sciences, Tracking system, Instrumentation and Detectors (physics.ins-det), Tracking (particle physics), Chip, Instrumentation, Mathematical Physics, Particle tracking detectors, Particle tracking detectors (Solid-state detectors), High Energy Physics - Experiment, High Energy Physics - Experiment (hep-ex), Single-photon avalanche diode, CMOS, Electronic engineering, Electronics, business, Image resolution
Abstract

The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical integration of avalanche pixels connected in pairs and operated in coincidence in fully digital mode and with the processing electronics embedded on the chip. The APiX sensor addresses the need to minimize the material budget and related multiple scattering effects in tracking systems requiring a high spatial resolution in the presence of a large occupancy. The expected operation of the new sensor features: low noise, low power consumption and suitable radiation tolerance. The APiX device provides on-chip digital information on the position of the coordinate of the impinging charged particle and can be seen as the building block of a modular system of pixelated arrays, implementing a sparsified readout. The technological challenges are the 3D integration of the device under CMOS processes and integration of processing electronics., Comment: 13th Topical Seminar on Innovative Particle and Radiation Detectors IPRD13

Published
2014

50. Macro Pixel ASIC (MPA): the readout ASIC for the pixel-strip (PS) module of the CMS outer tracker at HL-LHC

Author

Lodovico Ratti, Kostas Kloukinas, Wojciech Bialas, Valerio Re, Luigi Gaioni, A. Marchioro, J. Kaplon, D. Ceresa, and Gianluca Traversi

Subjects
Very-large-scale integration, Test bench, Pixel, business.industry, Computer science, STRIPS, Power budget, Settore ING-INF/01 - Elettronica, law.invention, Software, Application-specific integrated circuit, law, Data reduction methods, digital electronic circuits, pixelated detectors and associated VLSI electronics, Detectors and Experimental Techniques, business, Instrumentation, Low voltage, Mathematical Physics, Computer hardware
Abstract

The CMS tracker at HL-LHC is required to provide prompt information on particles with high transverse momentum to the central Level\,1 trigger. For this purpose, the innermost part of the outer tracker is based on a combination of a pixelated sensor with a short strip sensor, the so-called Pixel-Strip module (PS). The readout of these sensors is carried out by distinct ASICs, the Strip Sensor ASIC (SSA), for the strip layer, and the Macro Pixel ASIC (MPA) for the pixel layer. The processing of the data directly on the front-end module represents a design challenge due to the large data volume (30720\,pixels and 1920\,strips per module) and the limited power budget. This is the reason why several studies have been carried out to find the best compromise between ASICs performance and power consumption. This paper describes the current status of the MPA ASIC development where the logic for generating prompt information on particles with high transverse momentum is implemented. An overview of the readout method is presented with particular attention on the cluster reduction, position encoding and momentum discrimination logic. Concerning the architectural studies, a software test bench capable of reading physics Monte-Carlo generated events has been developed and used to validate the MPA design and to evaluate the MPA performance. The MPA-Light is scheduled to be submitted for fabrication this year and will include the full analog functions and a part of the digital logic of the final version in order to qualify the chosen VLSI technology for the analog front-end, the module assembly and the low voltage digital supply.

Published
2014

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