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Enhanced EV market penetration requires durability of the battery with high energy throughput. For long-term cycle stability of silicon-graphite anode capable of high energy density, the reversible redox reactions are crucial. Here, we unveil intriguing electrochemical phenomena such as crosstalk of lithium ion ($Li^{+}$) between silicon and graphite, $Li^{+}$ accumulation in silicon, and capacity depression of graphite under high pressure, which engender the irreversible redox reactions. Active material properties, i.e. the size of silicon and the hardness of graphite, silicon-graphite anode, are modified based on the unveiled results to enhance the reaction homogeneity and reduce subsequent degradation. Owing to the property change of the anode active materials, silicon-graphite anode paired with high nickel cathode allows the prismatic cell with 8.7 Ah to reach cycling performance over 750 cycles with volumetric energy density of 665 $Whl^{-1}$, which is corresponding to 800 $Whl^{-1}$ in the prismatic cell with 87 Ah. Finally, the cycling performance can be tailored by the design of electrode regulating $Li^{+}$ crosstalk. Our findings provide electrochemical insights into degradation mechanisms and a promising direction on the progressive improvement of materials and the design of electrodes in silicon-graphite anode., Comment: 14 pages, 5 figures, 1 table (11 pages and 7 figures for supplementary materials)

The mathematical modeling and numerical simulation of semiconductor-electrolyte systems play important roles in the design of high-performance semiconductor-liquid junction solar cells. In this work, we propose a macroscopic mathematical model, a system of nonlinear partial differential equations, for the complete description of charge transfer dynamics in such systems. The model consists of a reaction-drift-diffusion-Poisson system that models the transport of electrons and holes in the semiconductor region and an equivalent system that describes the transport of reductants and oxidants, as well as other charged species, in the electrolyte region. The coupling between the semiconductor and the electrolyte is modeled through a set of interfacial reaction and current balance conditions. We present some numerical simulations to illustrate the quantitative behavior of the semiconductor-electrolyte system in both dark and illuminated environments. We show numerically that one can replace the electrolyte region in the system with a Schottky contact only when the bulk reductant-oxidant pair density is extremely high. Otherwise, such replacement gives significantly inaccurate description of the real dynamics of the semiconductor-electrolyte system.