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We present Al2O3-ZnAl2O4-ZnO nanostructure, which could be a prominent candidate for optoelectronics, mechanical and sensing applications. While ZnO and ZnAl2O4 composites are mostly synthesized by sol-gel technique, we propose a solid-vapor growth mechanism. To produce Al2O3-ZnAl2O4-ZnO nanostructure, we conduct ZnO:C powder heating resulting in ZnO nanowires (NWs) growth on sapphire substrate and ZnAl2O4 spinel layer at the interface. The nanostructure was examined with Scanning Electron Microscopy (SEM) method. Focused Ion Beam (FIB) technique enabled us to prepare a lamella for Transmission Electron Microscopy (TEM) imaging. TEM examination revealed high crystallographic quality of both spinel and NW structure. Epitaxial relationships of Al2O3-ZnAl2O4 and ZnAl2O4-ZnO are given. [ABSTRACT FROM AUTHOR]

The impact of wet treatment using an (NH 4 ) 2 S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance ( ρ c < 1 × 10 -4 Ω·cm 2 ) was achieved with samples treated with an (NH 4 ) 2 S-isopropanol solution, whereas the highest resistivity ( ρ c = 3.3 × 10 -4 Ω·cm 2 ) and surface roughness ( R a = 16 nm) were observed in samples prepared by standard methods. Annealing the contact system in an N 2 + O 2 + H 2 O atmosphere caused degradation through species inter-diffusion and metal-metal solid solution formation, irrespective of the preparation method. Standard prepared substrates developed a thin GaN-Au intermediate layer at the interface after heat treatment. Enhanced adhesion and the absence of GaN decomposition were observed in samples additionally cleaned with the (NH 4 ) 2 S-solvent solution. Complete oxidation of nickel to NiO was observed in samples that underwent additional sulfur solution treatment. The intensity of metal species mixing and nickel oxidation was influenced by the metal diffusion rate and was affected by the initial state of the GaN substrate obtained through different wet treatment methods.

We investigate the full and half-shells of Pb 1-x Sn x Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch between both materials along the nanowire axis is less than 4%. The Pb 1-x Sn x Te solid solution is chosen due to the topological crystalline insulator properties above some critical concentrations of Sn (x ≥ 0.36). The IV-VI shells are grown with different compositions spanning from binary SnTe, through Pb 1-x Sn x Te with decreasing x value down to binary PbTe (x = 0). The samples are analysed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100) Pb 1-x Sn x Te on the sidewalls of wurtzite GaAs NWs., (© 2024. The Author(s).)

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments., (© 2022. The Author(s).)

Results of comparative structural characterization of bare and Zn-covered ZnTe nanowires (NWs) before and after thermal oxidation at 300 °C are presented. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and Raman scattering not only unambiguously confirm the conversion of the outer layer of the NWs into ZnO, but also demonstrate the influence of the oxidation process on the structure of the inner part of the NWs. Our study shows that the morphology of the resulting ZnO can be improved by the deposition of thin Zn shells on the bare ZnTe NWs prior to the oxidation. The oxidation of bare ZnTe NWs results in the formation of separated ZnO nanocrystals which decorate crystalline Te cores of the NWs. In the case of Zn-covered NWs, uniform ZnO shells are formed, however they are of a fine-crystalline structure or partially amorphous. Our study provides an important insight into the details of the oxidation processes of ZnTe nanostructures, which could be of importance for the preparation and performance of ZnTe based nano-devices operating under normal atmospheric conditions and at elevated temperatures.

Understanding the evolution of scleractinian corals on geological timescales is key to predict how modern reef ecosystems will react to changing environmental conditions in the future. Important to such efforts has been the development of several skeleton-based criteria to distinguish between the two major ecological groups of scleractinians: zooxanthellates, which live in symbiosis with dinoflagellate algae, and azooxanthellates, which lack endosymbiotic dinoflagellates. Existing criteria are based on overall skeletal morphology and bio/geo-chemical indicators-none of them being particularly robust. Here we explore another skeletal feature, namely fine-scale growth banding, which differs between these two groups of corals. Using various ultra-structural imaging techniques (e.g., TEM, SEM, and NanoSIMS) we have characterized skeletal growth increments, composed of doublets of optically light and dark bands, in a broad selection of extant symbiotic and asymbiotic corals. Skeletons of zooxanthellate corals are characterized by regular growth banding, whereas in skeletons of azooxanthellate corals the growth banding is irregular. Importantly, the regularity of growth bands can be easily quantified with a coefficient of variation obtained by measuring bandwidths on SEM images of polished and etched skeletal surfaces of septa and/or walls. We find that this coefficient of variation (lower values indicate higher regularity) ranges from ~40 to ~90% in azooxanthellate corals and from ~5 to ~15% in symbiotic species. With more than 90% (28 out of 31) of the studied corals conforming to this microstructural criterion, it represents an easy and robust method to discriminate between zooxanthellate and azooxanthellate corals. This microstructural criterion has been applied to the exceptionally preserved skeleton of the Triassic (Norian, ca. 215 Ma) scleractinian Volzeia sp., which contains the first example of regular, fine-scale banding of thickening deposits in a fossil coral of this age. The regularity of its growth banding strongly suggests that the coral was symbiotic with zooxanthellates.

A systematic distortion in high-angle annular dark-field scanning transmission electron microscope (HAADF-STEM) images, which may be caused by residual electrical interference, has been evaluated. Strain mapping, using the geometric phase methodology, has been applied to images acquired in an aberration-corrected STEM. This allows this distortion to be removed and so quantitative analysis of HAADF-STEM images was enabled. The distortion is quantified by applying this technique to structurally perfect and strain-free material. As an example, the correction is used to analyse an InAs/GaAs dot-in-quantum well heterostructure grown by molecular beam epitaxy. The result is a quantitative measure of internal strain on an atomic scale. The measured internal strain field of the heterostructure can be interpreted as being due to variations of indium concentration in the quantum dot.