1. Low-Temperature Bonded Cu/In Interconnect With High Thermal Stability for 3-D Integration
- Author
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Wei Hwang, Yan-Pin Huang, Kuan-Neng Chen, Ho-Ming Tong, Ching-Te Chuang, Yu-San Chien, Ruoh-Ning Tzeng, Jin-Chern Chiou, Ming-Shaw Shy, Teu-Hua Lin, Kou-Hua Chen, and Chi-Tsung Chiu
- Subjects
Interconnection ,Wire bonding ,Materials science ,Wafer bonding ,Contact resistance ,chemistry.chemical_element ,Temperature cycling ,Electronic, Optical and Magnetic Materials ,chemistry ,Anodic bonding ,Electronic engineering ,Thermal stability ,Electrical and Electronic Engineering ,Composite material ,Indium - Abstract
Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu7In3 phases with high melting temperature of 388.3°C and 632.2°C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3×10-8 Ω-cm2. In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.
- Published
- 2014
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