1. Interplay between Carrier and Impurity Concentrations in AnnealedGa1−xMnxAs: Intrinsic Anomalous Hall Effect
- Author
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Y. S. Kim, Kee Hoon Kim, J. C. Woo, W.O. Lee, Yoon Seok Oh, H. K. Choi, Seung-Hyun Chun, I. T. Jeong, Ki Sung Suh, Y. D. Park, and Z. G. Khim
- Subjects
Physics ,Geometric phase ,Condensed matter physics ,Hall effect ,Impurity ,General Physics and Astronomy ,Equations of motion ,Magnetic semiconductor ,Conductivity ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Scaling - Abstract
Investigating the scaling behavior of annealed ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear. Furthermore, measured anomalous Hall conductivities in the quadratic regime when properly scaled by carrier concentration remain constant, spanning nearly a decade in conductivity as well as over 100 K in ${T}_{C}$ and comparing favorably to theoretically predicated values for the intrinsic origins of the anomalous Hall effect. Both qualitative and quantitative agreements strongly point to the validity of new equations of motion including the Berry phase contributions as well as the tunability of the anomalous Hall effect.
- Published
- 2007