Author: "Hammons, B. E." / Search Limiters: Full Text - Searchworks@Jio Institute Digital Library Search Results

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Author: Hou, H. Q., Breiland, W. G., Hammons, B. E., Biefeld, R. M., Baucom, K. C., and Stall, R. A.
Published: 1997
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Author: Hou, H. Q., Crawford, M. Hagerott, Hammons, B. E., and Hickman, R. J.
Published: 1997
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Author: Chui, H. C., Biefeld, R. M., Hammons, B. E., Breiland, W. G., Brennan, T. M., Jones, E. D., Moffat, H. K., Kim, M. H., Grodzinski, P., Chang, K. H., and Lee, H. C.
Published: 1997
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Author: Myers, David R., Vawter, Allen G., Jones, Eric D., Zipperian, Thomas E., Drummond, Timothy J., Fritz, I. J., Dawson, L. Ralph, Brenman, T. M., Hammons, B. E., Datye, Abhaya K., Simons, David S., and Comas, James
Subjects: Field-effect transistors -- Research, Diodes, Laser -- Research, Annealing -- Research, Ion implantation -- Research, Business, Electronics, Electronics and electrical industries
Abstract: The effects of ion implantation and rapid thermal annealing (RTA) on the performance of compound-semiconductor heterostructure devices were studied to eliminate the susceptibility of such devices to process-induced degradation. Two different heterostructure devices were subjected to ion implantation and RTA treatments and results were then analyzed. It was found that the treatments significantly improved the performance of the heterostructure devices.
Published: 1992

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