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Conductive metal-organic frameworks (MOFs) are emerging electroactive materials for (opto-)electronics. However, it remains a great challenge to achieve reliable MOF-based devices via the existing synthesis methods that are compatible with the complementary metal-oxide-semiconductor technology, as the surface roughness of thus-far synthetic MOF films or pellets is rather high for efficient electrode contact. Here, we develop an on-liquid-gallium surface synthesis (OLGSS) strategy under chemical vapor deposition (CVD) conditions for the controlled growth of two-dimensional conjugated MOF (2D c-MOF) thin films with ten-fold improvement of surface flatness (surface roughness can reach as low as ~2 {\AA}) compared with MOF films grown by the traditional methods. Supported by theoretical modeling, we unveil a layer-by-layer CVD growth mode for constructing flattening surfaces, that is triggered by the high adhesion energy between gallium (Ga) and planar aromatic ligands. We further demonstrate the generality of the as-proposed OLGSS strategy by reproducing such a flat surface over nine different 2D c-MOF films with variable thicknesses (~2 to 208 nm) and large lateral sizes (over 1 cm2). The resultant ultra-smooth 2D c-MOF films enable the formation of high-quality electrical contacts with gold (Au) electrodes, leading to a reduction of contact resistance by over ten orders of magnitude compared to the traditional uneven MOF films. Furthermore, due to the efficient interfacial interaction benifited from the high-quality contacts, the prepared van der Waals heterostructure (vdWH) of OLGSS c-MOF and MoS2 exhibits intriguing photoluminescence (PL) enhancement, PL peak shift and large work function modulation. The establishment of the reliable OLGSS method provides the chances to push the development of MOF electronics and the construction of multicomponent MOF-based heterostructure materials.

Bismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 $^{\circ}$C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2/Vs, respectively. The devices show an excellent on/off ratio (>10^6), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2/Vs at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2/Vs) and IZI-TFTs (over 38 cm2/Vs) using MO semiconductor layers annealed at 300 $^{\circ}$C are achieved.

Two dimensional van der Waals heterostructures (2D are of significant interest due to their intriguing physical properties that are critically defined by the constituent monolayers and their interlayer coupling . However, typical inorganic 2 D vdWhs fall into the weakly coupled region, limiting efficient interfacial charge flow crucial for developing high performance quantum opto electronics. Here, we demonstrate strong interlayer coupling in Cu3 BHT (BHT = benzenehexathiol) graphene vdWhs an organic inorganic bilayer characterized by prominent interlayer charge transfer Monolayer Cu3 BHT with a Kagome lattice is synthesized on the water surface and then coupled with graphene to produce a cm2 scale 2D vdWh. Spectroscopic and electrical studies, along with theoretical calculation s show significant hole transfer from monolayer Cu3 BHT to graphene upon contact , being characteristic fingerprints for strong interlayer coupling This study unveils the great potential of integrating highly pi-conjugated 2D coordination polymers (2DCPs) into 2D vdWhs to explor e intriguing physical phenomena.