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A skin-like electronic health care patch is demonstrated with a stretchable organic light-emitting diode display and photodiode., Skin-like health care patches (SHPs) are next-generation health care gadgets that will enable seamless monitoring of biological signals in daily life. Skin-conformable sensors and a stretchable display are critical for the development of standalone SHPs that provide real-time information while alleviating privacy concerns related to wireless data transmission. However, the production of stretchable wearable displays with sufficient pixels to display this information remains challenging. Here, we report a standalone organic SHP that provides real-time heart rate information. The 15-μm-thick SHP comprises a stretchable organic light-emitting diode display and stretchable organic photoplethysmography (PPG) heart rate sensor on all-elastomer substrate and operates stably under 30% strain using a combination of stress relief layers and deformable micro-cracked interconnects that reduce the mechanical stress on the active optoelectronic components. This approach provides a rational strategy for high-resolution stretchable displays, enabling the production of ideal platforms for next-generation wearable health care electronics.

Numerous light-based diagnostic and therapeutic devices are routinely used in the clinic. These devices have a familiar look as items plugged in the wall or placed at patients' bedsides, but recently, many new ideas have been proposed for the realization of implantable or wearable functional devices. Many advances are being fuelled by the development of multifunctional materials for photonic healthcare devices. However, the finite depth of light penetration in the body is still a serious constraint for their clinical applications. In this Review, we discuss the basic concepts and some examples of state-of-the-art implantable and wearable photonic healthcare devices for diagnostic and therapeutic applications. First, we describe emerging multifunctional materials critical to the advent of next-generation implantable and wearable photonic healthcare devices and discuss the path for their clinical translation. Then, we examine implantable photonic healthcare devices in terms of their properties and diagnostic and therapeutic functions. We next describe exemplary cases of noninvasive, wearable photonic healthcare devices across different anatomical applications. Finally, we discuss the future research directions for the field, in particular regarding mobile healthcare and personalized medicine.

As organic photodetectors with less than 1 μm pixel size are in demand, a new way of enhancing the sensitivity of the photodetectors is required to compensate for its degradation due to the reduction in pixel size. Here, we used Ag nanoparticles coated with SiOxNy as a light-absorbing layer to realize the scale-down of the pixel size without the loss of sensitivity. The surface plasmon resonance appeared at the interface between Ag nanoparticles and SiOxNy. The plasmon resonance endowed the organic photodetector with boosted photon absorption and external quantum efficiency. As the Ag nanoparticles with SiOxNy are easily deposited on ITO/SiO2, it can be adapted into various organic color image sensors. The plasmon-supported organic photodetector is a promising solution for realizing color image sensors with high resolution below 1 μm.

In this work, organic photodiodes (OPDs) based on two newly synthesized p-type dipolar small molecules are reported for application to green-light-selective OPDs. In order to reduce the blue-color absorption induced by the use of C60 as the n-type material in a bulk heterojunction (BHJ), the electron donor:electron acceptor composition ratio is tuned in the BHJ. With this light manipulation approach, the blue-wavelength external quantum efficiency (EQE) is minimized to 18% after reducing the C60 concentration in the center part of the BHJ. The two p-type molecules get a cyanine-like character with intense and sharp absorption in the green color by adjusting the strength of their donating and accepting parts and by choosing a selenophene unit as a π-linker. When combined to C60, the green-wavelength EQE reaches 70% in a complete device composed of two transparent electrodes. Finally, the optical simulation shows the good color-balance performance of hybrid full-color image sensor without an additional filter by using the developed green OPD as the top-layer in stacked device architecture.

Controlling defect states in a buffer layer for organic photo devices is one of the vital factors which have great influence on the device performance. Defect states in silicon oxynitride (SiOxNy) buffer layer for organic photo devices can be controlled by introducing appropriate dopant materials. We performed ab initio simulations to identify the effect on doping SiOxNy with carbon (C), boron (B), and phosphorous (P) atoms. The results unveil that hole defects in the SiOxNy layer diminish with the phosphorous doping. Based on the simulation results, we fabricate the small molecule organic photodetector (OPD) including the phosphorous-doped SiOxNy buffer layer and the active film of blended naphthalene-based donor and C60 acceptor molecules, which shows excellent enhancement in the external quantum efficiency (EQE). The results of our charge-based deep level transient spectroscopy (Q-DLTS) measurements confirmed that the EQE enhancement originates from the decrease of the hole traps induced by the reduced hole defects. The method of controlling the defect states in SiOxNy buffer layers by the doping can be used to improve the performance in various organic photo devices.

As organic photodetectors with less than 1 μm pixel size are in demand, a new way of enhancing the sensitivity of the photodetectors is required to compensate for its degradation due to the reduction in pixel size. Here, we used Ag nanoparticles coated with SiO

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

The color optical switching device by polymer network liquid crystal (PNLC) with color filter on a specular reflector shows excellent performance; white reflectance of 22%, color gamut of 32%, and contrast ratio up to 50:1 in reflective mode measurement. The view-angle dependence of the reflectance can be adjusted by changing the PNLC thickness. The color chromaticity shown by the device is close to the limit value of color filters, and its value nearly remains with respect to the operating voltage. These optical properties of the device can be explained from the prediction based on multiple interactions between the light and the droplets of liquid crystal. The high reflectance, vivid color image, and moderate responds time allow the PNLC device to drive good color moving image. It can widely extend the applications of the reflective device.

Submicrometer air gap structure has formed on diffuse reflection structure to improve light reflectance. Covering polymer or liquid on a diffuse reflector to make optical components induces the severe decrease of the total reflectance, since the diffuse reflected angle of some light rays is larger than the critical angle and the rays travel to the medium until meeting a proper small incident angle. The reflectance drops to 68% of the original value with just a polymer coating on the diffuse reflector. The formation of an air tunnel structure between the polymer layer and the diffuse reflector makes a symmetrical reflective index matching state and recovers 95% of the original reflectance. Due to the simple fabrication process and the chemical stability, the structure can be applied to various optical components and reflective display devices.

Materials processing utilizing ultrashort near-infrared (NIR) laser pulses with duration in the range of tens to hundreds of femtoseconds (1fs = 10 15 s) has attracted a great deal of interest in the scientific and industrial world recently. Unfortunately, a number of materials that often exhibit great technological and scientific importance are transparent in NIR, making it very difficult to process them by laser radiation in this spectral range. Here, we present a new method for the efficient structuring of the surface of materials by applying femtosecond NIR laser pulses simultaneously with a weak extreme ultraviolet (XUV) beam, which leads to very strong radiation-matter interaction, bringing a dramatic increase in the surface processing speed. A laser system providing 5mJ, 820nm, 32fs, 10Hz pulses was used to generate high-order harmonics with the strongest spectral line at 21nm and with a conversion efficiency of 5%. The two beams were focused on the samples by using an off-axis paraboloidal multilayer mirror. As an example, we present the results of the surface nanostructuring of thin films of amorphous carbon and poly(methyl methacrylate) deposited on bulk substrates. We discuss the physical mechanisms that lead to the laser-induced periodic surface structures when our method is used.