12 results on '"Fouchet, Arnaud"'
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2. Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain
- Author
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Wang, Changan, Zhang, Hongbin, Deepak, Kumar, Chen, 5Chao, Fouchet, Arnaud, Duan, Juanmei, Hilliard, Donovan, Kentsch, Ulrich, Chen, Deyang, Zeng, Min, Gao, Xingsen, Zeng, Yu-Jia, Helm, Manfred, Prellier, Wilfrid, and Zhou, Shengqiang
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Condensed Matter - Materials Science - Abstract
Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons., Comment: 17 pages, 4 figures,submitted to Phys. Rev. Materials
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- 2019
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3. Magnetism tailored by mechanical strain engineering in PrVO$_3$ thin films
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Kumar, Deepak, David, Adrian, Fouchet, Arnaud, Pautrat, Alain, Varignon, Julien, Jung, Chang Uk, Lüders, Ulrike, Domengès, Bernadette, Copie, Olivier, Ghosez, Philippe, and Prellier, Wilfrid
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Condensed Matter - Materials Science - Abstract
Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ N\'eel temperature T$_N$ can be raised by 40 K with respect to the bulk when grown as thin films. Using advanced experimental techniques, this enhancement is unambiguously ascribed to a tetragonality resulting from the epitaxial compressive strain experienced by the films. First-principles simulations not only confirm experimental results, but they also reveal that the strain promotes an unprecedented orbital-ordering of the V$^{3+}$ d electrons, strongly favouring antiferromagnetic interactions. These results show that an accurate control of structural aspects is the key for unveiling unexpected phases in oxides.
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- 2019
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4. Interface chemical and electronic properties of LaAlO3/SrVO3 heterostructures
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Fouchet, Arnaud, Rault, Julien E., Allain, Mickaël, Bérini, Bruno, Rueff, J. -P., Dumont, Yves, and Keller, Niels
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Condensed Matter - Materials Science - Abstract
We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a polar LaAlO3 (LAO) thin layer, both epitaxially grown on SrTiO3. While ultrathin films (4 unit cells) of SVO do show insulating behavior over the entire temperature range, the LAO/SVO interface has a resistivity minimum at 250 K. When increasing the SVO layer thickness, the minimum is observed to shift to higher temperatures, but the resistivity stays always smaller than that of comparable SVO single films. Hard x-ray photoemission spectroscopy reveals a surface or interface related V5+ component in the V 2p spectra for SVO films and LAO/SVO heterostructures, respectively, attributed to a strongly oxidized component. This chemical reconstruction is weaker in LAO/SVO heterostructures compared to single SVO films. We show that this dead layer in SVO ultrathin films has to be considered when the film thickness reaches the few unit-cells limit and propose solutions on how to prevent this detrimental effect., Comment: 15 pages, 4 figures + SI 2 pages, 1 figure
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- 2018
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5. Tuning the Electronic Properties of LAO/STO Interfaces by Irradiating LAO Surface with Low-Energy Cluster Ion Beams
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Ridier, Karl, Aureau, Damien, Bérini, Bruno, Dumont, Yves, Keller, Niels, Vigneron, Jackie, Etcheberry, Arnaud, and Fouchet, Arnaud
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Condensed Matter - Strongly Correlated Electrons - Abstract
We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining X-ray photoelectron spectroscopy (XPS) and electrical transport measurements. Due to its unique features, we show that a short-time cluster ion irradiation of the LAO surface induces indirect modifications in the chemical properties of the buried STO substrate, with (1) a lowering of Ti atoms oxidation states (from Ti4+ to Ti3+ and Ti2+) correlated to the formation of oxygen vacancies at the LAO surface and (2) the creation of new surface states for Sr atoms. Contrary to what is observed by using higher energy ion beam techniques, this leads to an increase of the electrical conductivity at the LAO/STO interface. Our XPS data clearly reveal the existence of dynamical processes on the titanium and strontium atoms, which compete with the effect of the cluster ion beam irradiation. These relaxation effects are in part attributed to the diffusion of the ion-induced oxygen vacancies in the entire heterostructure, since an increase of the interfacial metallicity is also evidenced far from the irradiated area. These results demonstrate that a local perturbation of the LAO surface can induce new properties at the interface and in the entire heterostructure. This study highlights the possibility of tuning the electronic properties of LAO/STO interfaces by surface engineering, confirming experimentally the intimate connection between LAO surface chemistry and electronic properties of LAO/STO interfaces., Comment: 23 pages, 5 figures
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- 2017
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6. Antibacterial Zirconia Surfaces from Organocatalyzed Atom-Transfer Radical Polymerization
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Harfouche, Nesrine, primary, Marie, Philippe, additional, Dragoe, Diana, additional, Le, Hung, additional, Thébault, Pascal, additional, Bilot, Christelle, additional, Fouchet, Arnaud, additional, Rouden, Jacques, additional, Baudoux, Jérôme, additional, and Lepoittevin, Bénédicte, additional
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- 2024
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7. Controlling mesenchymal stem cell differentiation using vanadium oxide thin film surface wettability
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Khokhlova, Mariya, primary, Yadav, Abhishek, additional, Hammad, M., additional, Lhuissier, Eva, additional, Retoux, R., additional, Goux, D., additional, Fouchet, Arnaud, additional, David, Adrian, additional, Luders, Ulrike, additional, Boumediene, Karim, additional, and Prellier, W., additional
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- 2023
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8. Spontaneous ordering, strain control, and multifunctionality in vertical nanocomposite heteroepitaxial films
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Fouchet, Arnaud, Haiyan Wang, Hao Yang, Jongsik Yoon, Quanxi Jia, and MacManus-Driscoll, Judith Louise
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Barium compounds -- Electric properties ,Barium compounds -- Structure ,Magnesium oxide -- Electric properties ,Samarium -- Electric properties ,Samarium -- Mechanical properties ,Titanium -- Electric properties ,Titanium -- Mechanical properties ,Zirconium -- Electric properties ,Business ,Electronics ,Electronics and electrical industries - Abstract
The strain coupling, microstructural evolution, and functional properties of a series of BaTi[O.sub.3] (BTO) films with different second-phase oxide additions, Ti[O.sub.2], MgO, Zr[O.sub.2], [Sm.sub.2][O.sub.3] and [Y.sub.2][O.sub.3] (YO), is studied. The studies have shown that the strain state in BTO is tuned by different additions and compared with BFO, which is switched from tensile for a pure film on STO to compressive by the presence of the second phase (SmO).
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- 2009
9. Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)
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Coq Germanicus, Rosine, primary, Lallemand, Florent, additional, Chateigner, Daniel, additional, Jouha, Wadia, additional, Moultif, Niemat, additional, Latry, Olivier, additional, Fouchet, Arnaud, additional, Murray, Hugues, additional, Bunel, Catherine, additional, and Lüders, Ulrike, additional
- Published
- 2021
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10. Metastable monoclinic [110] layered perovskite Dy2Ti2O7 thin films for ferroelectric applications
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Pravarthana, Dhanapal, Lebedev, Oleg I., David, Adrian, Fouchet, Arnaud, Trassin, Morgan, Rohrer, Gregory S., Salvador, Paul A., and Prellier, Wilfrid
- Abstract
Using the Combinatorial Substrate Epitaxy (CSE) approach, we report the stabilization of Dy2Ti2O7 epitaxial monoclinic, layered-perovskite phase Dy2Ti2O7 thin films. To achieve this, the films are deposited on high density, polished La2Ti2O7 polycrystalline ceramic substrates, which are stable as monoclinic layered-perovskites, and were prepared by conventional sintering. Microstructural analysis using electron backscatter diffraction (EBSD), electron diffraction (ED), and high-resolution transmission electron microscopy (HRTEM) support this observation. Further, they reveal that the cubic pyrochlore phase is observed far from the interface as films are grown thicker (100 nm), confirming the importance of substrate-induced phase and space group selection. This works reinforces the vast potential of CSE to promote the stabilization of metastable phases, thus giving access to new functional oxide materials, across a range of novel material systems including ferroelectrics., RSC Advances, 9 (35), ISSN:2046-2069
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- 2019
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11. Kernel methods for gene regulatory network inference
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Fouchet, Arnaud, Informatique, Biologie Intégrative et Systèmes Complexes (IBISC), Université d'Évry-Val-d'Essonne (UEVE), Université d'Evry-Val-d'Essonne, Florence d’Alché-Buc, Jean-Marc Delosme, and Davesne, Frédéric
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Exploration de données -- Méthodes statistiques ,Genetic regulation ,[INFO.INFO-LG]Computer Science [cs]/Machine Learning [cs.LG] ,Régulation génétique ,automatic learning ,Data exploration-- statistical methods ,Multiple kernels ,[INFO.INFO-LG] Computer Science [cs]/Machine Learning [cs.LG] ,Dérivées partielles ,Apprentissage automatique ,Noyaux multiples ,[INFO.INFO-BI]Computer Science [cs]/Bioinformatics [q-bio.QM] ,[INFO.INFO-BI] Computer Science [cs]/Bioinformatics [q-bio.QM] - Abstract
New technologies in molecular biology, in particular dna microarrays, have greatly increased the quantity of available data. in this context, methods from mathematics and computer science have been actively developed to extract information from large datasets. in particular, the problem of gene regulatory network inference has been tackled using many different mathematical and statistical models, from the most basic ones (correlation, boolean or linear models) to the most elaborate (regression trees, bayesian models with latent variables). despite their qualities when applied to similar problems, kernel methods have scarcely been used for gene network inference, because of their lack of interpretability. in this thesis, two approaches are developed to obtain interpretable kernel methods. firstly, from a theoretical point of view, some kernel methods are shown to consistently estimate a transition function and its partial derivatives from a learning dataset. these estimations of partial derivatives allow to better infer the gene regulatory network than previous methods on realistic gene regulatory networks. secondly, an interpretable kernel methods through multiple kernel learning is presented. this method, called lockni, provides state-of-the-art results on real and realistically simulated datasets., De nouvelles technologies, notamment les puces à adn, multiplient la quantité de données disponibles pour la biologie moléculaire. dans ce contexte, des méthodes informatiques et mathématiques sont activement développées pour extraire le plus d'information d'un grand nombre de données. en particulier, le problème d'inférence de réseaux de régulation génique a été abordé au moyen de multiples modèles mathématiques et statistiques, des plus basiques (corrélation, modèle booléen ou linéaire) aux plus sophistiqués (arbre de régression, modèles bayésiens avec variables cachées). malgré leurs qualités pour des problèmes similaires, les modèles à noyaux ont été peu utilisés pour l'inférence de réseaux de régulation génique. en effet, ces méthodes fournissent en général des modèles difficiles a interpréter. dans cette thèse, nous avons développé deux façons d'obtenir des méthodes à noyaux interprétables. dans un premier temps, d'un point de vue théorique, nous montrons que les méthodes à noyaux permettent d'estimer, a partir d'un ensemble d'apprentissage, une fonction de transition et ses dérivées partielles de façon consistante. ces estimations de dérivées partielles permettent, sur des exemples réalistes, de mieux identifier le réseau de régulation génique que des méthodes standards. dans un deuxième temps, nous développons une méthode à noyau interprétable grâce à l'apprentissage à noyaux multiples. ce modèle fournit des résultats du niveau de l'état de l'art sur des réseaux réels et des réseaux simulés réalistes.
- Published
- 2014
12. Croissance et caractérisations de films minces de ZnO et ZnO dopé cobalt préparés par ablation laser pulsé
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Fouchet, A., Laboratoire de cristallographie et sciences des matériaux (CRISMAT), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC), Université de Caen, Dr Wilfrid Prellier(prellier@ensicaen.fr), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Fouchet, Arnaud
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couches minces ,zinc oxide ,semiconducteurs magnétiques ,deposition by pulsed laser deposition ,ferromagnetism ,ferromagnétisme ,oxyde de zinc ,cobalt ,thin films ,dépôt par laser pulsé ,magnétisme ,magnetism ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,[PHYS.COND] Physics [physics]/Condensed Matter [cond-mat] ,magnetic semiconductor - Abstract
Spintronics is an emergent area of research that exploits the quantum propensity of electrons to spin as well as utilizing their charge state, allowing microelectronic devices to be devised with additional functionality. Indeed, a great deal of research activity has been focused on dilute magnetic semiconductors (DMS) owing to their potential application as room temperature spintronic devices. This is based on recent theoretical calculations that predict it is possible to design DMS materials possessing ferromagnetic transitions (FM-Tc) above room temperature by doping a magnetic element into a host wide bandgap semiconductor (e.g., Co-doped ZnO). However, the origin of ferromagnetism in these DMS materials is still subject of controversy, and questions remain: - Is ferromagnetism in DMS intrinsic or extrinsic? - what is the mechanism relative to the magnetic interactions? To address these questions, we have developed a novel strategy for the pulsed laser deposition of Co-doped ZnO films that utilizes metallic targets as the source of cationic elements. First, the growth conditions for ZnO films were optimized, and then subsequently utilized to deposit Co-doped ZnO films. Second, because this method allows for the precise control of the Co/Zn composition the growth conditions for certain amounts of cobalt doped into ZnO also were systematically studied. As a result, we have correlated the presence of ferromagnetism to film defects, results which have supported by recent theoretical calculations. Moreover, these results were corroborated by a comparative study between Co-doped ZnO films grown by ceramic and metallic targets., La spintronique est un nouveau domaine de recherche qui a vu récemment des applications très importantes dans la microélectronique. Dans ce cadre, de nouveaux matériaux sont étudiés dont les semi-conducteurs magnétiques dilués (DMS). Ces derniers associent les propriétés des semiconducteurs avec le spin de l'électron pour donner de nouvelles fonctionnalités. Malheureusement ses matériaux possèdent une température de Curie (Tc) largement en dessous de la température ambiante. Or, d'après des prédictions théoriques récentes, l'utilisation de semi-conducteurs à large bande interdite comme le ZnO dopé cobalt, seraient des candidats potentiels pour atteindre une Tc largement au-dessus de la température ambiante. Cependant, l'origine du ferromagnétisme est encore sujette à controverse : - Le ferromagnétisme est intrinsèque ou extrinsèque ? - Quel est le mécanisme relatif aux interactions magnétiques ? Pour répondre à ces questions une méthode originale de dépôt en couche mince par ablation laser a été mise en place à partir de l'utilisation de deux cibles métalliques. Cette étude a donc été réalisée en deux étapes : l'optimisation des conditions de dépôt du ZnO puis l'utilisation des ses conditions pour incorporer le cobalt. De plus, la concentration en cobalt des films a été fixée et nous avons étudié l'influence des conditions de dépôts. Il en a résulté que le substrat jouait un rôle important dans la croissance des films et nous en avons déduit que les défauts sont nécessaires à l'apparition du ferromagnétisme. Ceci en accord avec les derniers développements théoriques. Enfin, une comparaison avec des films réalisés à partir des cibles céramiques a confirmé ses résultats.
- Published
- 2006
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