1. Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
- Author
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Wang, M., Andrews, C., Reimers, S., Amin, O. J., Wadley, P., Campion, R. P., Poole, S. F., Felton, J., Edmonds, K. W., Gallagher, B. L., Rushforth, A. W., Makarovsky, O., Gas, K., Sawicki, M., Kriegner, D., Zubac, J., Olejnik, K., Novak, V., Jungwirth, T., Shahrokhvand, M., Zeitler, U., Dhesi, S. S., and Maccherozzi, F.
- Subjects
Condensed Matter - Materials Science - Abstract
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields., Comment: 26 pages, 6 figures
- Published
- 2019
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