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The Sun cubE onE (SEE) is a 12U CubeSat mission proposed for a phase A/B study to the Italian Space Agency that will investigate Gamma and X-ray fluxes and ultraviolet (UV) solar emission to support studies in Sun-Earth interaction and Space Weather from LEO. More in detail, SEE's primary goals are to measure the flares emission from soft-X to Gamma ray energy range and to monitor the solar activity in the Fraunhofer Mg II doublet at 280 nm, taking advantage of a full disk imager payload. The Gamma and X-ray fluxes will be studied with unprecedented temporal resolution and with a multi-wavelength approach thanks to the combined use of silicon photodiode and silicon photomultiplier (SiPM) -based detectors. The flare spectrum will be explored from the keV to the MeV range of energies by the same payload, and with a cadence up to 10 kHz and with single-photon detection capabilities to unveil the sources of the solar flares. The energy range covers the same bands used by GOES satellites, which are the standard bands for flare magnitude definition. At the same time SiPM detectors combined with scintillators allow to cover the non-thermal bremsstrahlung emission in the gamma energy range. Given its UV imaging capabilities, SEE will be a key space asset to support detailed studies on solar activity, especially in relation to ultraviolet radiation which strongly interacts with the upper layers of the Earth's atmosphere, and in relation to space safety, included in the field of human space exploration. The main goal for the UV payload is to study the evolution of the solar UV emission in the Mg II band at two different time scales: yearly variations along the solar cycle and transient variations during flare events., Comment: 11 pages, 4 figures

Ultra-wide bandgap and the absence of shallow dopants are the major challenges in realizing diamond based electronics. However, the surface functionalization offers an excellent alternative to tune electronic structure of diamonds. Herein, we report on tuning the surface electronic properties of hydrogenated polycrystalline diamond films through oxygen functionalization. The hydrogenated diamond (HD) surface transforms from hydrophobic to hydrophilic nature and the sheet resistance increases from ~ 8 kohms/sq. to over 10 Gohms/sq. with progressive ozonation. The conductive atomic force microscopic (c-AFM) studies reveal preferential higher current conduction on selective grain interiors (GIs) than that of grain boundaries confirming the surface charge transfer doping on these HDs. In addition, the local current conduction is also found to be much higher on (111) planes as compared to (100) planes on pristine and marginally O-terminated HD. However, there is no current flow on the fully O-terminated diamond (OD) surface. Further, X-ray photoelectron spectroscopic (XPS) studies reveal a redshift in binding energy (BE) of C1s on pristine and marginally O-terminated HD surfaces indicating surface band bending whilst the BE shifts to higher energy for OD. Moreover, XPS analysis also corroborate c-AFM study for the possible charge transfer doping mechanism on the diamond films which results in high current conduction on GIs of pristine and partially O-terminated HDs., Comment: 24 pages, 6 figures, 1 table

We propose a mechanism of intravalley spin-flip scattering in spin-valley coupled two dimensional systems by transferring momentum of light into exciton center of mass using optical vortex (OV) beams. By varying the dispersion of light using the topological charge of OV beam, we demonstrate a unique approach to control the intra-valley spin-flip scattering rate of excitons. From our photoluminescence measurements, we demonstrate that the intra-valley scattering rate in W-based TMDs can be tuned externally by OV beams. Variation of photoluminescence intensity with topological charges shows a crossover temperature (> 150 K), indicating competitions among time scales involving radiative recombination, spin-flip scattering, and thermal relaxations. Our proposed technique utilizing a structured light beam can open up a new approach to explore the physics of excitons in 2D systems., Comment: 14 pages, 3 figures (Main text); 13 pages, 12 figures (Supporting Information)

The origin of ultralow friction and high wear resistance in ultrananocrystalline diamond (UNCD) films is still under active debate because of the perplexed tribochemistry at the sliding interface. Herein, we report a comparative study on surface topography and nanoscale friction of tribofilms, in wear tracks of two sets of UNCD films having different structural characteristics. Despite both the films display ultralow coefficient of friction, the UNCD films grown under Ar atmosphere (UNCDAr) exhibit a high wear resistance while the wear rate is higher for the films grown in N2 (UNCDN). Frictional force microscopic (FFM) investigations clearly reveal the manifestation of shear induced graphitization on both the films. However, the wear track of UNCDAr films have a large network of a few layer graphene (FLG) structures over the amorphous carbon tribofilms while only isolated clusters of FLG structures are present in the wear track of UNCDN films. Here, we demonstrate the direct micro-/nanoscopic evidence for the formation of large network of ~ 0.8 - 6 nm thick FLG structures, as a consequence of shear induced graphitization and discuss their decisive role in ultralow friction and wear., Comment: 33 pages, 8 figures, 1 Table

Several strong resonance lines, such as H I Ly-$\alpha$, Mg II k, Ca II K, Ca I 4227 \AA\, which are characterized by deep and broad absorption profiles in the solar intensity spectrum, show conspicuous linear scattering polarization signals when observed in quiet regions close to the solar limb. Such signals show a characteristic triplet-peak structure, with a sharp peak in the line core and extended wing lobes. The line core peak is sensitive to the presence of magnetic fields through the Hanle effect, which however is known not to operate in the line wings. Recent theoretical studies indicate that, contrary to what was previously believed, the wing linear polarization signals are also sensitive to the magnetic field through magneto-optical effects (MO). We search for observational indications of this recently discovered physical mechanism in the scattering polarization wings of the Ca I 4227 \AA\ line. We performed a series of spectropolarimetric observations of this line using the Zurich IMaging POLarimeter (ZIMPOL) camera at the Gregory-Coud\'e telescope of IRSOL (Switzerland) and at the GREGOR telescope in Tenerife (Spain). Spatial variations of the total linear polarization degree and of the linear polarization angle are clearly appreciable in the wings of the observed line. We provide a detailed discussion of our observational results, showing that the detected variations always take place in regions where longitudinal magnetic fields are present, thus supporting the theoretical prediction that they are produced by MO effects., Comment: Accepted by A&A

The present study reports on an innovative method to prepare discrete diamond nanoparticles or nanodiamonds (NDs) with high structural and optical quality through top-down approach by controlled oxidation of pre-synthesized nanocrystalline diamond (NCD) film. These NDs are studied for their structural and optical properties using atomic force microscopy (AFM), Raman and fluorescence (FL) spectroscopy. While AFM analysis confirms uniform distribution of discrete NDs with different sizes varying from a few tens of nanometers to about a micron, spectroscopic investigations reveal the presence of impurity - vacancy related color centers exhibiting FL at 637 and 738 nm as a function of particle size. In addition, an intense emission originating from vacancy centers associated with N and Si (SiV-) is observed for all NDs at the temperature close to liquid nitrogen. A detailed spectral analysis is carried out on the structural defects in these NDs. The full width at half maximum of diamond Raman band ( ~ 1332 cm-1) is found to be as narrow as 1.5 cm-1 which reveals the superior structural quality of these NDs. Further, mapping of diamond Raman and FL spectra of SiV- confirm the uniform distribution of NDs throughout the substrate. The narrow line widths and a minimal shift in peak positions of Raman and FL spectra endorse this aspect., Comment: 30 pages, 5 figures, 3 Tables

Despite of useful applications of Ag, it is hazardous to health and environment and hence early detection is required. Crystal defects influencing optical property is less likely utilized for Ag detection using prevalent UV-Vis technique. Quantum dots (QDs) ZnS prepared by soft chemical route are exploited for the detection of Ag ions in aqueous solution for nM to mM concentrations. UV-Vis and photoluminescence (PL) measurements reveal quantum confinement effect and presence of defects in ZnS nanoparticles (NPs). Controlled synthesis of ZnS NPs allows appearance of defects related peak at 400-550 nm in UV-Vis spectra. A plausible mechanism is presented and elucidated by XRD and PL studies for chemical interaction between ZnS with Ag ion. The interaction affects prominently and defects related absorption of ZnS NPs and allows single step Ag ion detection in aqueous medium. This absorption method is extended to other ions (Na, K, Mg, Ca, Ba ions) including S prone heavy and toxic ions like Pb, Hg and Cd. Among them, Ag ion shows the best response with ZnS NPs. This demonstration using a portable and cost effective technique with no organic component opens up possibility for other inorganic materials., Comment: 17 pages , 10 figures

Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. Field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy are used to study the structural and morphological features of the grown films. Herein, we demonstrate, how the morphology can be tuned from planar to vertical structure using single control parameter namely, dilution of CH4 with Ar and/or H2. Our results show that the competitive growth and etching processes dictate the morphology of the NGSs. While Ar-rich composition favors vertically oriented graphene nanosheets, H2-rich composition aids growth of planar films. Raman analysis reveals dilution of CH4 with either Ar or H2 or in combination helps to improve the structural quality of the films. Line shape analysis of Raman 2D band shows nearly symmetric Lorentzian profile which confirms the turbostratic nature of the grown NGSs. Further, this aspect is elucidated by HRTEM studies by observing elliptical diffraction pattern. Based on these experiments, a comprehensive understanding is obtained on the growth and structural properties of NGSs grown over a wide range of feedstock compositions., Comment: 19 pages, 8 figures, 1 table

Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence study reveal the formation of AlGaN microrods in the wurtzite phase and ensures the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers., Comment: 25 pages, 10 figures, Journal

For the first time, high optical quality InN films were grown on sapphire substrate using atmospheric chemical vapour deposition technique in the temperature range of 560-650 oC. Self-catalytic approach was adopted to overcome the nucleation barrier for depositing InN films. In this process, seeding of the nucleation sites and subsequent growth was performed in the presence of reactive NH3. We investigated the simultaneous effect of strain and Burstein-Moss (BM) energy shift on optical properties of InN films using Raman and photoluminescence spectroscopy. Existence of compressive strain in all films is revealed by Raman spectroscopic analysis and is found to relax with increasing growth temperature. The asymmetric broadening of the A1(LO) phonon mode is observed with the onset of plasmon-phonon interaction for films grown at 620 oC. Large blue shift of the band gap of InN (1.2 eV) is observed as a collective result of compressive strain in films as well as BM shift. Carrier density is calculated using the BM shift in the photoluminescence spectra. Finally, blue shift in band edge emission is observed further because of the presence of compressive strain in the films along with the BM effect., Comment: 31 pages, 7 figures, Journal

The polarized Raman spectroscopy is capable of giving confirmation regarding the crystalline phase as well as the crystallographic orientation of the sample. In this context, apart from crystallographic x-ray and electron diffraction tools, polarized Raman spectroscopy and corresponding spectral imaging can be a promising crystallographic tool for determining both crystalline phase and orientation. Sub-micron sized hexagonal AlGaN crystallites are grown by a simple atmospheric pressure chemical vapor deposition technique using the self catalytic vapor-solid process under N-rich condition. The crystallites are used for the polarized Raman spectra in different crystalline orientations along with spectral imaging studies. The results obtained from the polarized Raman spectral studies shows single crystalline nature of sub-micron sized hexagonal AlGaN crystallites. Optical properties of the crystallites for different crystalline orientations are also studied using polarized photoluminescence measurements. The influence of internal crystal field to the photoluminescence spectra is proposed to explain the distinctive observation of splitting of emission intensity reported, for the first time, in case of c-plane oriented single crystalline AlGaN crystallite as compared to that of m-plane oriented crystallite., Comment: 24 pages, 4 figure, jouranal

Metal oxide nanostructures are widely used in energy applications like super capacitors and Li-on battery. Smaller size nanocrystals show better stability, low ion diffusion time, higher-ion flux and low pulverization than bigger size nanocrystals during electrochemical operation. Studying the distinct properties of smaller size nanocrystals such as quantum dots (QDs) can improve the understanding on reasons behind the better performance and it will also help in using QDs or smaller size nanoparticles (NPs) more efficiently in different applications. Aqua stable pure SnO2 QDs with compositional stability and high surface to volume ratio are studied as an electrochemical super capacitor material and compared with bigger size NPs of size 25 nm. Electron energy-loss spectroscopic study of the QDs revealed dominant role of surface over the bulk. Temperature dependent study of low frequency Raman mode and defect Raman mode of QDs indicated no apparent volume change in the SnO2 QDs within the temperature range of 80-300 K. The specific capacitance of these high surface area and stable SnO2 QDs has showed only 9% loss while increasing the scan rate from 20 mV/S to 500 mV/S. Capacitance loss for the QDs is less than 2% after 1000 cycles of charging discharging, whereas for the 25 nm SnO2 NPs, the capacitance loss is 8% after 1000 cycles. Availability of excess open volume in QDs leading to no change in volume during the electro-chemical operation and good aqua stability is attributed to the better performance of QDs over bigger sized NPs., Comment: 31 pages, 9 figures, Journal

The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A1 symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however is reported only in the O rich single nanowires with the asymmetric A1(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires., Comment: 12 pages, 3 figures, Journal

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied in situ scanning by Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the VGa-3ON defect complex on nanowire surface is attributed in controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires., Comment: 42 pages, 6 figures, Journal

Polycrystalline Sb 2 Te 3-x Se x (0.0 < x < 1.0) samples were synthesized by the solid state reaction method. The structural analysis showed that up to the maximal concentration of Se, the samples possess the Rhombohedral crystal symmetry (space group R 3 m ). Increase of Se content increases the resistivity of the samples. Variation of phonon frequencies, observed from Raman spectroscopic study, depict anomalous behaviour around x = 0.2. The sample Sb 2 Te 2.8 Se 0.2 also shows maximum Seebeck coefficient, carrier concentration and thermoelectric power factor. Nature of scattering mechanism controlling the thermopower data has been explored. The thermoelectric properties of the synthesized materials have been analyzed theoretically in the frame of Boltzmann equation approach., Comment: Accepted for publication in Europhysics Letters

The spatial and the angular variants of the Goos-H\"anchen (GH) and the Imbert-Federov (IF) beam shifts contribute in a complex interrelated way to the resultant beam shift in partial reflection at planar dielectric interfaces. Here, we show that the angular GH and the two variants of the IF effects can be decoupled, amplified and separately observed by weak value amplification and subsequent conversion of spatial$\leftrightarrow$angular nature of the beam shifts using appropriate pre and post selection of polarization states. We experimentally demonstrate such decoupling and illustrate various other intriguing manifestations of weak measurements by employing optimized pre and post selections (based on the eigen polarization states of the shifts) elliptical and / or linear polarization basis. The demonstrated ability to amplify, controllably decouple or combine the beam shifts via weak measurements may prove to be valuable for understanding the different physical contributions of the effects and for their applications in sensing and precision metrology, Comment: 10 pages,5 figures

Methane (CH_4) gas sensing properties of novel vanadium dioxide (VO_2) nanostructured films is reported for the first time. The single phase nanostructures are synthesized by pulsed dc-magnetron sputtering of V target followed by oxidation in O_2 atmosphere at 550 ^oC. The partial pressure of O_2 is controlled to obtain stoichiometric VO_2 with the samples showing rutile monoclinic crystalline symmetry and regions of rod shaped nano-architectures. These nanostructured films exhibit a reversible semiconductor to metal transition in the temperature range of 60-70 ^oC. Gas sensing experiments are carried out in the temperature span from 25 ^oC to 200 ^oC in presence of CH_4. These experiments reveal that the films respond very well at temperatures as low as 50 ^oC, in the semiconducting state., Comment: 18 pages, 4 figures, journal

Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low vapor pressure of Ga below 900 ^oC. In the present study, we have grown the GaN nanowires at a temperature, as low as 700 ^oC. Role of indium in the reduction of growth temperature is discussed in the ambit of Raoult's law. Indium is used to increase the vapor pressure of the Ga sufficiently to evaporate even at low temperature initiating the growth of GaN nanowires. In addition to the studies related to structural and vibrational properties, optical properties of the grown nanowires are also reported for detailed structural analysis., Comment: 24 pages, 7 figures, journal

Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of exceptionally high structural and optical quality nonpolar GaN nanowires with controlled and uniform surface morphology and size distribution, for large scale production. The role of O contamination (~1-10^5 ppm) in the surface architecture of these nanowires is investigated with the possible mechanism involved. Nonpolar GaN nanowires grown in O rich condition show the inhomogeneous surface morphologies and sizes (50 - 150 nm) while nanowires are having precise sizes of 40(5) nm and uniform surface morphology, for the samples grown in O reduced condition. Relative O contents are estimated using electron energy loss spectroscopy studies. Size-selective growth of uniform nanowires is also demonstrated, in the O reduced condition, using different catalyst sizes. Photoluminescence studies along with the observation of single-mode waveguide formation, as far field bright violet multiple emission spots, reveal the high optical quality of the nonpolar GaN nanowires grown in the O reduced condition., Comment: 27 Pages, 8 figure, journal

Origin of shifts in the surface plasmon resonance (SPR) frequency for noble metal (Au, Ag) nanoclusters are discussed in this book chapter. Spill out of electron from the Fermi surface is considered as the origin of red shift. On the other hand, both screening of electrons of the noble metal in porous media and quantum effect of screen surface electron are considered for the observed blue shift in the SPR peak position., Comment: 37 pages, 14 Figures in the submitted book chapter of The Annual Reviews in Plasmonics, edited by Professor Chris D. Geddes. Springer Scinece

In a proposed book chapter surface plasmon polariton assisted optical switching in noble metal nanoparticle systems is discussed in the sub-band gap formalism., Comment: 34 page, 13 figures, Submitted as Book chapter in The Annual Reviews in Plasmonics, edited by Professor Chris D. Geddes. Springer Scinece

1LO optical phonons in free-standing mixed Cd1-xZnxS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrystals, the 1-LO modes are found to appear at slightly lower wavenumbers than those in the bulk mixed crystals and exhibit one mode behavior. On the other hand, the line broadening is found to be much more than that can be accounted on the basis of phonon confinement. From the detailed line shape analysis it turns out that the substitutional disorder in the mixed crystals contributes much more to the line broadening than the phonon confinement. The linewidth arising from these mechanisms are also extracted from the analysis., Comment: 15 Pages,8 Figures, Accepted in J. Raman Spectroscopy

The optical properties of focused ion beam-engraved perfectly aligned and spatially controlled multi-quantum-well InGaN-GaN nanopillars were investigated. Crystalline MQW nanopillars with a diameter of 30 to 95 nm and high aspect ratios showed a maximum of three-fold enhancement in emission intensity per unit active area. A light emitting contour map of Taiwan is drawn with a nanopillar structure to demonstrate the site control of the technique adopted in the present study. Raman scattering studies were used to characterize the newly created surfaces. Unknown peaks in GaN and InGaN nanostructures are identified for surface optical (SO) phonon modes with proper assignments of wave vectors using multiple excitations, and the SO mode for the ternary phase is reported for the first time., Comment: 18 Pages; 8 Figures Including TOC; Acepted in J. Raman Spectroscopy

Confined acoustic and optical phonons in Si nanoclusters embedded in sapphire, synthesized using ion-beam implantation are investigated using Raman spectroscopy. The l = 0 and l = 2 confined acoustic phonons, found at low Raman shift, are analyzed using complex frequency model and the size of the nanoparticles are estimated as 4 and 6 nm. For the confined optical phonon, in contrast to expected red shift, the Raman line shape shows a substantial blue shift, which is attributed to size dependent compressive stress in the nanoparticles. The calculated Raman line shape for the stressed nanoparticles fits well to data. The sizes of Si nanoparticles obtained using complex frequency model are consistent with the size estimated from the fitting of confined optical phonon line shapes and those found from X-ray diffraction and TEM., Comment: 15 pages, 4 figures, Conf. edision J. Nanoscience and Nanotechnology (In Press)

Raman spectroscopic investigations are carried out on ZnO nanoparticles for various photon energies. Intensities of E1-LO and E2 modes exhibit large changes as the excitation energy varied from 2.41 to 3.815 eV, signifying substantially large contribution of Frohlich interaction to the Raman polarizability as compared to deformation potential close to the resonance. Relative strength of these two mechanisms is estimated for the first time in nanoparticles and compared with those in the bulk., Comment: 13 pages. 3 figures Journal

Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the identification of the transformed phases. Raman line as well as area mapping are used for locating the phases in the indented region. Calculation of pressure contours in the indented region is used for understanding the phase distribution. We report here a comprehensive study of all the phases of Si, reported so far, leading to possible understanding of material properties useful for possible electromechanical applications. As a major finding, distribution of amorphous phase in the indented region deviates from the conventional wisdom of being in the central region alone. We present phase mapping results for both Si(100) and Si(111) substrates., Comment: 12 pages, 6 figures, Submitted in Journal

Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A1, E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1 and 560 cm-1 for these nanostructures. Calculations for the frequencies of surface optical (SO) phonon modes in InN nanostructures yield values close to those of the new Raman modes. A possible reason for large intensities for SO modes in these nanostructures is also discussed., Comment: 13 pages, 4 figures, Submitted in Journal

The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by Micro-Raman area mapping. Pop-in bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is pointed out, for the first time, as the rate limiting factor for the dislocation dynamics initiating the recrystallization process in GaN., Comment: 17 pages, 5 figures including Supplements, Accecepted in J. Raman Spectroscopy

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process., Comment: 10 pages, 3 figures

Strong deformation potential (DP) dominated Raman spectra are reported for quantum confined cubic ZnS nanoclusters under off-resonance conditions allowed only in quantum dots. A flurry of zone boundary phonons is demonstrated in the scattering process. Transverse optic (TO) mode in the multi-phonon process shows only even order overtones suggesting the dominance of a two-phonon process (having large DP value in ZnS) and its integral multiples. Two-phonon TO modes corresponding to A1 and B2 symmetries are also demonstrated under off-resonance conditions which are allowed only in quantum dots., Comment: 14 pages, 4 figures, Submitted in Journal

InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase., Comment: 11 pages, 4 figures, Journal

Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases., Comment: 9 pages, 4 figuresn Journal

UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant observation. Calculated size dependence, incorporating size corrected dielectric constants, of electron-phonon interaction energy agrees well with measured values and also predict stronger interaction energy than that of the bulk for diameter below ~3 nm., Comment: 13 pages, 5 figures, Journal

Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering., Comment: 11 pages, 3 figures, Journal

In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for $E_2$(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we have observed disorder-activated Raman scattering., Comment: 26pages, 3 figures

Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent annealing at high temperature. The blue bands above ~3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Radiative recombination of sp electrons above Fermi level to occupied d-band holes are assigned for observed luminescence peaks. Peaks at 3.1 eV and 3.4 eV are correlated to energy gaps at the X- and L-symmetry points, respectively, with possible involvement of relaxation mechanism. The blue shift of peak positions at 3.4 eV with decreasing cluster size is reported to be due to the compressive strain in small clusters. A first principle calculation based on density functional theory using the full potential linear augmented plane wave plus local orbitals (FP-LAPW+LO) formalism with generalized gradient approximation (GGA) for the exchange correlation energy is used to estimate the band gaps at the X- and L-symmetry points by calculating the band structures and joint density of states (JDOS) for different strain values in order to explain the blueshift of ~0.1 eV with decreasing cluster size around L-symmetry point., Comment: 13 pages, 7 Figures Only in PDF format; To be published in J. of Chem. Phys. (Tentative issue of publication 8th December 2004)

Spherical gold nanoclusters are grown by 1.8 MeV Au++ ion implantation into an amorphous silica matrix and subsequent air annealing at 873 K. Ultraviolet and visible light absorption confirms the presence of a dipolar surface plasmon peak at the expected location for a gold sphere in silica. Grazing incidence X-ray diffraction shows peaks corresponding to fcc gold with lattice spacing close to that of bulk gold, as well as allowing estimation of cluster size using Scherrer's formula. Low frequency Raman scattering reveals a relatively narrow peak, suggesting a narrow distribution of nanocrystal diameters. Acoustic phonon frequencies corresponding to the spheroidal quadrupolar vibrations of a continuum sphere with the anisotropic elasticity of gold are calculated using a novel method of molecular dynamics and extrapolation to the continuum limit using relatively small numbers of point masses. The study confirms high energy ion implantation as a method capable of producing gold nanocrystals with spherical shape and well controlled size., Comment: 8 pages, 4 figures

Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies., Comment: 12 pages (Figures included); To appear in 3rd May 2004 issue of Appl. Phys. Lett

Gold nanoclusters are grown by 1.8 MeV Au++ implantation in silica matrix and subsequent air annealing in the temperature range of 873K-1273K. Post-annealed samples show plasmon resonance in the optical region (~ 2.38-2.51 eV) for average cluster radii ~1.04-1.74 nm. A blueshift of the plasmon peak is observed with decreasing cluster size in the annealed samples. Similar trend of blueshift with decreasing cluster size in case of Au nanoclusters embedded in the porous alumina matrix [B. Palpant, et al., Phys. Rev. B 57, 1963 (1998)] has convinced us to assume a possible role of 'rind' like porosity at the Au nanocluster-matrix interface with available open volume defects in the amorphous silica matrix., Comment: 11 pages in PDF format (figures included). Submitted to Appl. Phys. Lett

Gold nanoclusters are grown by 1.8 MeV Au^\sup{2+} implantation on c-Al\sub{2}O\sub{3}(0001)substrate and subsequent air annealing at temperatures 1273K. Post-annealed samples show plasmon resonance in the optical (561-579 nm) region for average cluster sizes ~1.72-2.4 nm. A redshift of the plasmon peak with decreasing cluster size in the post-annealed samples is assigned to the 'spillout' effect (reduction of electron density) for clusters with ~157-427 number of Au atoms fully embedded in crystalline dielectric matrix with increased polarizability in the embedded system., Comment: 14 Pages (figures included); Accepted in Chem. Phys. Lett (In Press)