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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. We propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC) [1]. The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.

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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.

Experimental data in OriginPro

The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

Broad ion beams have shown their wide applications for materials modification. Focused ion beams can be used in a similar way while simultaneously providing process monitoring. Here, we demonstrate this on a new kind of ion-induced structural evolution. Sub-micrometer Sn spheres were irradiated in a helium ion microscope with a sub-nm beam of 30 keV He ions. Above a fluence of ~10^17/cm², Sn extrusions appeared on the surface of the spheres, which were imaged using the secondary electron signal. Initially, small, pyramid-like faceted extrusions form at the equator of the spheres (north pole pointing to the ion source). Later, each sphere becomes completely covered by the extrusions. A model was developed that assumes that each He ion generate ~70 Frenkel pairs. The implanted helium atoms, interstitials, and vacancies will be confined by the oxide skin of the spheres. Some He atoms will occupy vacancies, which partially prevent their recombination with interstitials. Furthermore, the ion irradiation leads to erosion and opening of the SnO skin. The interstitials can now escape from the interior of the Sn sphere and form an epitaxial regular Sn lattice on the exterior. Transmission electron microscopy, Auger electron spectroscopy as well as TRI3DYN [1] and 3D kinetic lattice Monte Carlo [2] simulations support these findings. In addition, we provide a perspective on focused ion beams from our in-house development and production of liquid metal alloy ion sources, which can be used for applications from self-organized patterning, over altering magnetic or electrical properties, to quantum photonics and computation [3]. [1] Möller, Nucl. Instr. Meth. B 322 (2014) 23 [2] Strobel et al., Phys. Rev. B 64 (2001) 245422 [3] www.hzdr.de/fib

We present results for direct maskless magnetic patterning of ferromagnetic nanostructures using a special liquid metal alloy ion source for focused ion beam (FIB) systems. We used a Co36Nd64 alloy as the FIB source [1]. A Wien mass filter allows for quick switching between the ion species in the alloy without changing the FIB source. A 5000×1000×50 nm3 permalloy strip served as the sample. Using the FIB we implanted a 300-nm-wide track with Co ions (see Fig.1). We observed the Co-induced changes by measuring the sample with microresonator ferromagnetic resonance before and after the implantation. Structures as small as 30 nm can be implanted up to a concentration of 10 % near the surface. Such lateral resolution is hard to reach for other lithographic methods. This allows for easy magnetic modification of edge-localized spin waves. In another set of samples, we implanted Dy ions to locally increase the damping in a stripe pattern of ~120-nm-wide strips with 400 nm periodicity on a total area of 1×1 mm². Thus, the Gilbert damping parameter can be easily increased by one order of magnitude with a lateral resolution of about 100 nm. In contrast to electron beam lithography in combination with broad-beam ion implantation, the maskless FIB process does not require the cumbersome and difficult removal of the ion-hardened resist if optical measurements like BLS or TR-MOKE are needed.

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many approaches lack the required spatial placement accuracy and Si technology compatibility required for many of the envisioned applications. Here, we present a method to place single or few SPEs emitting in the telecom O-band1. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit for which this work lays the foundations. To achieve our goal, we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabrication methods have been irradiated with Si++ 40 keV ions in a spot pattern of 6 to 500 ions per spot. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom with a zero phonon lines (ZPL) at 1278 nm have been created in carbon rich SOI wafers. In ultra clean SOI wafers W-centers, a tri-interstitial Si complex has been created with a ZPL at 1218 nm. The achieved lateral SPE placement accuracy is below 50 nm in both cases and the success rate of SPE formation is more than 50%. Finally, we give an overview on possible other applications and give an outlook on future projects and instrumentation developments. 1Hollenbach, M., Klingner, N., Jagtap, N.S. et al. Wafer-scale nanofabrication of telecom single-photon emitters in silicon. Nature Communications 13, 7683 (2022). https://doi.org/10.1038/s41467-022-35051-5

Single photon emitters (SPE) are the starting point and foundation for future photonic quantum technologies. We present the laterally controlled fabrication of single G and W centers in silicon that emit in the telecom O-band. We utilized home built gold-silicon liquid metal alloy ion sources (LMAIS) in a focused ion beam (FIB) system to perform mask-free implantation of 40 keV Si ions from 6 to 500 ions per spot. Analysis and confirmation of SPEs has been done in a home-build cryo-photoluminescence setup. We will demonstrate a success rate of more than 50% and upscaling to wafer-scale. We will also provide an insight and overview on the LMAIS technology and an outlook on other potential applications of FIB implantation.

We present results of direct maskless magnetic patterning of ferromagnetic nanostructures using a cobalt focused ion beam (FIB) system. The liquid metal ion source of the FIB was made of a Co36Nd64 alloy. A Wien mass filter allows for selecting the ion species. Using the FIB, we implanted narrow tracks of Co ions into a nominal 5000×1000×50 nm3 permalloy strip. We observed the Co-induced changes of the magnetic properties by measuring the sample with microresonator ferromagnetic resonance before and after the implantation. Regions as small as 50 nm can be implanted up to concentrations of at.-10 % near the surface. This allows for easy magnetic modification of edge-localized spin waves with a lateral resolution otherwise hard to reach. The direct-write maskless FIB process is quick and convenient for optical measurement techniques, as it does not involve the virtually impossible removal of ion-hardened resist masks one would face when using lithography with broad-beam ion implantation

A review of single photon emitters in silicon based on ion-induced defects is provided. Fabrication methods and current state of the art are discussed.

Most approaches to implant single or few ions for quantum applications require the use of focused ion beams (FIB). In addition to the detection of ion implantation and laterally precise placement, the first consideration should also be the species as well as the emittance of the ion beam itself. While elements that are gaseous at room temperature can mainly provided by Gas Field Ion Sources or Plasma Ion Sources, most of the metals and semimetals afford the utilization of Liquid Metal Ion Sources (LMIS). Gallium has established in industry and science as easiest and most stable type of LMIS. For quantum applications other ion species like Li, B, C, N, Al, Si, P, Sb, Bi or the rare earth elements became from higher interest [1-6]. We give an overview about published metal alloys for FIBs and give an insight into the development and production of new sources. Finally, we give an outlook on current and future applications and activities. [1] L. Bischoff, et al., Micro Eng. 13, 367 (1991), 10.1016/0167-9317(91)90113-R [2] P. Mazarov, et al., JVST B 27, L47-L49 (2009), 10.1116/1.3253471 [3] L. Bischoff, et al., Appl. Phys. Rev. 3, 021101 (2016), 10.1063/1.4947095 [4] W. Pilz, et al., JVST B 37, 021802 (2019), 10.1116/1.5086271 [5] L. Bischoff, et al., JVST B 38, 042801 (2020), 10.1116/6.0000073 [6] N. Klingner, et al., BJNANO 11, 1742 (2020), 10.3762/bjnano.11.156

We present results for direct maskless magnetic patterning of ferromagnetic nanostructures using a special liquid metal alloy ion source for focused ion beam (FIB) systems. We used a Co36Nd64 alloy as the FIB source [1]. A Wien mass filter allows for quick switching between the ion species in the alloy without changing the FIB source. A 5000×1000×50 nm3 permalloy strip served as the sample. Using the FIB we implanted a 300-nm-wide track with Co ions (see Fig.1). We observed the Co-induced changes by measuring the sample with microresonator ferromagnetic resonance before and after the implantation. Structures as small as 30 nm can be implanted up to a concentration of 10 % near the surface. Such lateral resolution is hard to reach for other lithographic methods. This allows for easy magnetic modification of edge-localized spin waves. In another set of samples, we implanted Dy ions to locally increase the damping in a stripe pattern of ~120-nm-wide strips with 400 nm periodicity on a total area of 1×1 mm². Thus, the Gilbert damping parameter can be easily increased by one order of magnitude with a lateral resolution of about 100 nm. In contrast to electron beam lithography in combination with broad-beam ion implantation, the maskless FIB process does not require the cumbersome and difficult removal of the ion-hardened resist if optical measurements like BLS or TR-MOKE are needed.

Broad ion beams have shown their wide applications for materials modification. Focused ion beams can be used in a similar way while simultaneously providing process monitoring. Here, we demonstrate this on a new kind of ion-induced structural evolution. Sub-micrometer Sn spheres were irradiated in a helium ion microscope with a sub-nm beam of 30 keV He ions. Above a fluence of ~10^17/cm², Sn extrusions appeared on the surface of the spheres, which were imaged using the secondary electron signal. Initially, small, pyramid-like faceted extrusions form at the equator of the spheres (north pole pointing to the ion source). Later, each sphere becomes completely covered by the extrusions. A model was developed that assumes that each He ion generate ~70 Frenkel pairs. The implanted helium atoms, interstitials, and vacancies will be confined by the oxide skin of the spheres. Some He atoms will occupy vacancies, which partially prevent their recombination with interstitials. Furthermore, the ion irradiation leads to erosion and opening of the SnO skin. The interstitials can now escape from the interior of the Sn sphere and form an epitaxial regular Sn lattice on the exterior. Transmission electron microscopy, Auger electron spectroscopy as well as TRI3DYN [1] and 3D kinetic lattice Monte Carlo [2] simulations support these findings. In addition, we provide a perspective on focused ion beams from our in-house development and production of liquid metal alloy ion sources, which can be used for applications from self-organized patterning, over altering magnetic or electrical properties, to quantum photonics and computation [3]. [1] Möller, Nucl. Instr. Meth. B 322 (2014) 23 [2] Strobel et al., Phys. Rev. B 64 (2001) 245422 [3] www.hzdr.de/fib

Single-photon sources are one of the elementary building blocks for photonic quantum information and optical quantum computing [1]. One of the upcoming challenges is the monolithic photonic integration and coupling of single-photon emission, reconfigurable photonic elements and single-photon detection on a silicon chip in a controllable manner. Particularly, fully integrated single-photon emitters on-demand are required for enabling a smart integration of advanced functionalities in on-chip quantum photonic circuits [2]. This work presents a mask-free nanofabrication method involving a quasi-deterministic creation of scalable extrinsic color centers in silicon emitting in the optical telecom O-band [3] on a commercial silicon-on-insulator platform using focused ion beam writing. We also show the local writing of an intrinsic color center in silicon, which is linked to a tri-interstitial complex and reveals quantum emission close to the telecom band [4]. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars [5] and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit. [1]D. D. Awschalom et al.,Nature Photonics 12,516 (2018) [2]J. C. Adcock et al.,IEEE, 27, 2, (2021) [3]M. Hollenbach et al.,Optics Express 28,26111 (2020) [4]Y. Baron et al.,arXiv:2108.04283 (2021) [5]M. Hollenbach et al.,arXiv:2112.02680 (2021)

Indistinguishable single-photon sources at telecom wavelengths are the key photonic qubits for transmitting quantum information over long distances in standard optical fibers with minimal transmission losses and high fidelity. This enables secure quantum communication over the quantum internet and, in turn, a modular approach to quantum computing. The monolithic integration of single-photon sources with reconfigurable photonic elements and single-photon detectors in a silicon chip is a key enabling step toward demonstrating scalable quantum hardware such as quantum photonic integrated circuits (QPICs). Nowadays, nearly all the necessary components for QPICs are available such as superconducting single-photon detectors, low-loss photonic waveguides, delay lines, modulators, phase shifters, and low-latency electronics. Yet, the practical implementation of scalable quantum hardware has been largely hampered by the lack of on-chip single-photon emitters in silicon that can be created at desired locations on the nanoscale. Here, we demonstrate two complementary wafer-level protocols for the creation of single telecom-wavelength color centers in silicon with a probability exceeding 50%. Both approaches are fully compatible with current silicon technology and enable the scalability of millions of single telecom quantum emitters that are created at desired nanoscale positions on a silicon chip. These results unlock a clear pathway for industrial-scale QPICs.

Enhanced interstitial diffusion in tin is a phenomenon often observed during ion-beam irradiation and in lead-free solders. For the latter, this not very well understood, strain-driven mechanism results in the growth of whiskers, which can lead to unwanted shorts in electronic designs. In ion-beam physics, this phenomenon is often observed as a result of the enhanced formation of Frenkel pairs in the energetic collision cascade. Here, we show how epitaxial growth of tin extrusions on tin-oxide-covered tin spheres can be induced and simultaneously observed by implanting helium using a helium ion microscope. Calculations of collision cascades based on the binary collision approximation and 3D-lattice-kinetic Monte Carlo simulations show that the implanted helium will occupy vacancy sites, leading to a tin interstitial excess. Sputtering and phase separation of the tin oxide skin, which is impermeable for tin atoms, create holes and will allow the epitaxial overgrowth to start. Simultaneously, helium accumulates inside the irradiated spheres. Fitting the simulations to the experimentally observed morphology allows us to estimate the tin to tin-oxide interface energy to be 1.98 J m−2 . Our approach allows the targeted initiation and in situ observation of interstitial diffusion-driven effects to improve the understanding of the tin-whisker growth mechanism observed in lead-free solders.

Indistinguishable single-photon sources at telecom wavelengths are the key photonic qubits for transmitting quantum information over long distances in standard optical fibers with minimal transmission losses and high fidelity. This enables secure quantum communication over the quantum internet and, in turn, a modular approach to quantum computing. The monolithic integration of single-photon sources with reconfigurable photonic elements and single-photon detectors in a silicon chip is a key enabling step toward demonstrating scalable quantum hardware such as quantum photonic integrated circuits (QPICs). Nowadays, nearly all the necessary components for QPICs are available such as superconducting single-photon detectors, low-loss photonic waveguides, delay lines, modulators, phase shifters, and low-latency electronics. Yet, the practical implementation of scalable quantum hardware has been largely hampered by the lack of on-chip single-photon emitters in silicon that can be created at desired locations on the nanoscale. Here, we demonstrate two complementary wafer-scale protocols for the quasi-deterministic creation of single G and W telecom-wavelength color centers in silicon with a probability exceeding 50%. Both approaches are fully compatible with current silicon technology and enable the fabrication of single telecom quantum emitters at desired nanoscale positions on a silicon chip. These results unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

Magnetic nanostructures needed for magnonics and spintronics are usually processed by conventional lithography techniques in combination with lift-off or broad-beam ion etching. However, it has been shown [1] that the quality and shape of the structures’ edges play an important role for the magnetization dynamics as structures become smaller and smaller. Furthermore, regarding optical measurement techniques, hard-to-remove resist masks that become hardened by ion etching are problematic. Direct-writing focused ion beams (FIB) do not have these issues. In addition, using non-standard ion species opens various paths for local magnetic patterning, i.e., influencing the magnetic properties locally. I will present results for maskless magnetic patterning of ferromagnetic nanostructures using He and Ne ions as well as a few liquid metal alloy ion sources (LMAIS) for FIB systems. He/Ne FIBs are well established and commercially available. Irradiation of (paramagnetic) FeAl films by Ne ions creates local ferromagnetic nanostructures caused by disorder that are embedded in a paramagnetic matrix [2]. The precise Ne FIB also enables us to trim the edges of magnetic nanostructures enhancing their magnetic fidelity and creating certain localized magnon states at the edges of the samples. Using specifically developed LMAIS, like e.g., Co36Nd64, CoDy, or CuDy [3,4] in combination with a Wien mass filter offers further new paths for magnetic patterning. I will present results on the modification of Ni80Fe20 (permalloy) strip samples. Using the CoNd LMAIS a narrow track of Co ions was implanted. The induced magnetic changes were measured with microresonator ferromagnetic resonance (FMR) before and after the implantation. Structures as small as 30 nm can be implanted up to a concentration of 10 % near the surface. Such lateral resolution is hard to reach for other lithographic methods. Using Dy ions one can locally increase the Gilbert damping parameter of the magnetization dynamics

We have successfully employed high-brightness liquid metal ion sources (LMIS) for the investigation of the interaction of metal and metalloid ions with strong field laser beams. The gold and silicon ions, generated in the LMIS by electrostatic field ionization, can be further ionized up to Au11+ and Si4+ with Thales laser (1 kHz) at intensities of up to 4e16 W/cm2. Furthermore, we employed the fiber laser with 100 kHz to manipulate the recoil momenta with subcycle resolution.

Raw data for the publication: "Epitaxial lateral overgrowth of tin spheres driven and directly observed by helium ion microscopy". It contains helium ion microscopy, transmission electron microscopy, scanning electron microscopy as well as gallium focused ion microscopy images and XPS data. It shows how the irradiation of tin spheres with keV He ions causes epitaxial lateral overgrowth.

The incident ion defines the interaction mechanism with the sample surface caused by the energy deposition and thus has significant consequences on resulting nanostructures [1]. Therefore, we have extended the FIB technology towards the stable delivery of multiple ion species by liquid metal alloy ion sources (LMAIS) [2]. These LMAIS provides single and multiple charged ion species of different masses. As an example we introduce the GaBiLi LMAIS [3]. Such “universal” source enables high resolution imaging with light Li ions and sample modification with Ga or heavy polyatomic Bi clusters, all coming from the same ion source. Light ions are of increasing interest due to the available high resolution in the nanometer range and their special chemical and physical behavior in the substrate. We compare helium and neon ion beams from a helium ion microscope with beams such as lithium, boron, and silicon, obtained from a mass-separated FIB using a LMAIS with respect to the imaging and milling resolution, as well as the current stability [4]. The bombardment of solids by poly-atomic (cluster) ions leads to nonlinear collision cascades in near-surface regions. In comparison with linear cascades by monoatomic ions, much higher energy deposition occurs up to local surface melting [5]. Here, we also report the study on the sputter yield of Si under the bombardment by atomic Bi+ and cluster Bin+ (n = 2-4) ions with the same specific energy related to one incidence single atom [6]. [1] P. Mazarov, V. Dudnikov, A. Tolstoguzov, Electrohydrodynamic emitters of ion beams, Phys. Usp. 63 (2020) 1219. [2] L. Bischoff, P. Mazarov, L. Bruchhaus, and J. Gierak, Liquid Metal Alloy Ion Sources – An Alternative for Focused Ion Beam Technology, Appl. Phys. Rev. 3 (2016) 021101. [3] W. Pilz, N. Klingner, L. Bischoff, P. Mazarov, and S. Bauerdick, Lithium ion beams from liquid metal alloy ion sources, JVSTB 37(2), Mar/Apr (2019) 021802. [4] N. Klingner, G. Hlawacek, P. Mazarov, W. Pilz, F. Meyer

Au and Si ions from high brightness liquid metal ion sources (LMIS) are used as ionic targets for strong-field laser interaction with femtosecond laser beam. Field ionization processes in the field emission source at electrostatic fields of some 10 V/nm allow the generation of various metallic and metalloid ion beams with charge states such as Au^{2+} and Si^{2+}. Studying the ionization in strong femtosecond laser fields with intensities of up to 1E16 W/cm^2, we observed for these elements charge states up to Au^{11+} and Si^{4+}.

The incident ion defines the interaction mechanism with the sample surface caused by the energy deposition and thus has significant consequences on resulting nanostructures [1]. In addition, nanofabrication requirements for FIB technologies are specifically demanding in terms of patterning resolution and stability [2]. Therefore, we have extended the technology towards a stable supply of multiple ion species selectable into a nanometer scale focused ion beam by employing a liquid metal alloy ion source (LMAIS) [3]. This LMAIS provides single and multiple charged ion species of different masses, resulting in significantly different interaction mechanisms. Nearly half of the elements of the periodic table are thus made available in the FIB technology because of continuous research in this area [4]. This range of ion species with different mass or charge can be beneficial for various nanofabrication applications. Recent developments could make these sources to an alternative technology feasible for nanopatterning challenges. In this contribution, the operation principle, first results and prospective domains for modern FIB applications will be presented. As examples, we will introduce the AuGeSi and GaBiLi LMAIS [5, 6]. Both sources provide light and heavy ions available from a single source to tailor chemical and physical properties of resulting nanostructures. GaBiLi enables high resolution imaging with light Li ions and sample modification with Ga or heavy polyatomic Bi clusters, all coming from one ion source. For sub-10 nm focused ion beam nanofabrication and microscopy, the GaBiLi-FIB could benefit of providing additional ion species in a mass separated FIB without changing the ion source. [1] P. Mazarov, V. Dudnikov, A. Tolstoguzov, Electrohydrodynamic emitters of ion beams, Phys. Usp. 63, 1219 (2020). [2] L. Bruchhaus, P. Mazarov, L. Bischoff, J. Gierak, A. D. Wieck, and H. Hövel, Comparison of technologies for nano device prototyping with a special focus on io

Single Electron Transistors (SETs) open the way to semiconductor devices with extremely low power consumption. Quantum mechanical effects are used in such transistors: field-controlled tunneling of single electrons from a source to a drain via a quantum dot. SETs can be manufactured as thin Si pillars (source and drain) with a Si oxide layer in-between containing one Si quantum dot (Fig. 1). After SiOx formation by ion beam mixing, a thermally activated phase separation including Ostwald ripening results in a self-organization of Si nanocrystals in the SiO2 layer acting as Si quantum dots (Si NDs). For SET operation at room temperature, the diameter of the Si pillars needs to be < 12 nm, the Si ND diameter must be in the range of 2…3 nm and the distances between Si NDs and source/drain cannot be larger than 1.5 nm allowing quantum mechanical tunneling of the electrons. Thus, Transmission Electron Microscopy (TEM) must be used for the structural characterization of these SETs. Si NDs inside the SiO2 matrix can only be detected by using the Si plasmon loss in the energy-filtered TEM mode. TEM sample preparation is challenging because of the very small 3D structure of the pillars (Fig.2) and the need for very thin TEM lamellae (30…40 nm in thickness). The Focused Ion Beam (FIB) lift-out technique can be used to prepare such samples. Setting markers and gradual thinning of the lamella from both sides (with TEM inspection in between) is necessary. Surprisingly, comprehensive TEM studies uncovered that the oxide layer of a Si/ SiO2/Si layer stack can become dramatically thinner in pillars fabricated from this stack by Reactive Ion Etching (RIE). The oxide layer thinning depends on the pillar diameter. For instance, an originally 8 nm thick SiO2 layer is reduced to 2.6 nm in 15 nm diameter pillars. In order to prove that this oxide shrinkage is caused by RIE and not by sample preparation the most critical process in the FIB preparation - which is the electron-beam-assisted

Light ions are of increasing interest by application of focused ion beam (FIB) techniques due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate [1, 2]. We compare helium and neon ion beams from a helium ion microscope with ion beams such as lithium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability [3]. While He+ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li+ from a LMAIS [4] offer higher milling rates and ion currents while outperforming the milling resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume and time for milling. References [1] L. Bischoff et al., Appl. Phys. Rev. 3 021101 (2016). [2] P. Mazarov et al., Phys. Usp. 63 1219–1255 (2020). [3] N. Klingner et al., Beilstein J. Nanotechnol. 11 1742–1749 (2020). [4] W. Pilz et al., JVSTB 37 021802 (2019).

Extreme states of matter exist throughout the universe e.g. inside planetary cores, stars or astrophysical jets. Such conditions can be generated in the laboratory in the interaction of powerful lasers with solids. Yet, the measurement of the subsequent plasma dynamics with regard to density, temperature and ionization is a major experimental challenge. However, ultra-short X-ray pulses provided by X-ray free electron lasers (XFELs) allow for dedicated studies, which are highly relevant to study laboratory astrophysics, laser-fusion research or laser-plasma-based particle acceleration. Here, we report on experiments that employ a novel ultrafast method, which allows to simultaneously access temperature, ionization state and nanometer scale expansion dynamics in high-intensity laser-driven solid-density plasmas with a single X-ray detector. Using this method, we gain access to the expansion dynamics of a buried layer in compound samples, and we measure opacity changes arising from bound-bound resonance transitions in highly ionized copper. The presence of highly ionized copper leads to a temperature estimate of at least 2 million Kelvin already after the first 100 femtoseconds following the high-intensity laser irradiation. More specifically, we make use of asymmetries in small-angle X-ray scattering (SAXS) patterns, which arise from different spatial distributions of absorption and scattering cross sections in nanostructured grating samples when we tune an XFEL to atomic resonant energies of copper. Thereby, changes in asymmetry can be connected with the evolution of the plasma expansion and ionization dynamics. The potential of XFEL-based resonant SAXS to obtain three-dimensional ultrafast, nanoscopic information on density and opacity may offer a unique path for the characterization of dynamic processes in High Energy Density plasmas.

Resonant Small-angle x-ray scattering raw data obtained in measurements at MEC at LCLS and evalutation of the asymmetry in the scattering patterns. The data set is structured in case 1/Si-Cu-compound targets and case 2/Cu-only-targets as presented in the publication for on- and off-resonant XFEL probe energies.

Si nanopillars for the fabrication of vertical nanowire gate-all-around Single Electron Transistors [1], have been irradiated with Si++, Pb+, Pb++, Au +, Au++, Au2 +, and Au3 + ions accelerated by 30 kV. A FIB of mass separated ions, extracted from a Liquid Metal Alloy Ion Source [2], has been scanned over regular arrays of Si nanopillars of different diameters and pillar distances. The irradiations have been performed at RT and 400∘C. Different morphological changes of the pillars like thinning, height reduction, tilting etc. have been observed which can be attributed to ion erosion (sputtering), impact-induced viscous flow or even transient nanosecond-scale melting [3]. The pillars were imaged by AFM, SEM, TEM and HIM. 3D Monte Carlo simulations [4] of ion and recoil trajectories based on the Binary Collision Approximation and Molecular Dynamics calculations have been carried out in order to discriminate the dominating processes. [1] EU project Ions4SET, Horizon 2020 grant No. 688072 [2] L.Bischoff, et al., Appl. Phys. Rev. 3 (2016) 021101 [3] C. Anders, K.-H. Heinig, H. Urbassek, Phys. Rev. B87 (2013) 245434 [4] W. Möller,NIM B322 (2014) 23

Acting at high speed enables creatures to survive in their harsh natural environments. They developed strategies for fast actuation that inspire technological embodiments like soft robots. Here, we demonstrate a series of simulation-guided lightweight, durable, and untethered soft-bodied robots performing large-degree deformations at unprecedentedly high frequencies of up to 200 Hz, driven at very low magnetic fields down to 0.5 mT, and exhibit a record high specific energy density of 10.8 kJ/m3/mT. Unforeseen nonlinear behavior of our robots is observed in experiments and analyzed by simulation, guiding future designs of soft-bodied robots. Our robots walk, swim, levitate, transport cargo, and can even catch a living fly unharmed. Such ultrafast soft robots with high-frequency oscillations can rapidly adapt to varying environmental conditions, inspire biomedical applications in confined environment, and serve as model systems to develop complex movements inspired by nature.

The application of Focused Ion Beams (FIB) has become a well-established and promising technique for patterning and prototyping on the nm-scale in research and development. Light ions in the range of m = 1 … 28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nm range and their special chemical and physical behavior in the substrate. In this work helium and neon ion beams from a Helium Ion Microscope (HIM) are compared with ion beams like beryllium, lithium, boron, carbon and silicon obtained from a mass separated FIB using Liquid Metal Alloy Ion Sources (LMAIS) with respect to their imaging and milling resolution.

Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototyping on the µm-scale and below. Liquid Metal Alloy Ion Sources (LMAIS) represent an alternative to expand the FIB application fields beside all other source concepts. The need of light elements like B was investigated using various alloys. A promising solution was found in a Co31Nd64B5 based LMAIS which should be introduced in more detail. Beside Co ions as a ferromagnetic element and the rare earth element Nd especially B is interesting for special FIB applications with a best obtained resolution of about 30 nm so far.

He-induced nanostructured tungsten (so called W-fuzz) was bombarded with Ar ions under 60 degree and the dynamic erosion behaviour experimentally investigated. By using a highly sensitive quartz-crystal-microbalance technique in a particle catcher configuration the sputtered particles distribution of Wfuzz could be evaluated. In contrast to a at sample, where sputtered particles are emitted primarily in forward direction, we find that W-fuzz samples emit sputtered particles preferably in backward direction (i.e. in the direction of the incident ion beam). After continuous Ar irradiation of a W-fuzz sample the distribution approaches that of a at sample. In addition to experimental data we also show modelling results obtained with a state-of-the-art Monte-Carlo (MC) binary collision approximation (BCA) code TRI3DYN in full 3D. Surface morphology changes as monitored by SEM as well as the dynamic sputtering behaviour can be well reproduced by the full 3D MC-BCA code.

Focused Ion Beam (FIB) is a modern tool for µm and sub-µm structure fabrication and analysis. Commercial systems work mostly with a Gallium - Liquid Metal Ion Source (LMIS) and can achieve a resolution lower than 10 nm and current densities more than 10 Acm-2. The use of alloy LMIS, mainly developed at HZDR, opens a broad field of new applications. In combination with modern FIB systems, like the VELION (Raith) the application field can be extended due to a broad spectrum of available ion species in high resolution ion beams and the stage properties. All these aspects will be concentrated to the ZIM project GRANT No.-ZF4330902 DF7 dealing with the prospective modern topic of nano-magnetic structures from basic research up to new applications. Main topics are: i) the local modification of magnetic single nano-structures using a FIB with Co, Ni, Fe, … ions and ii) the fabrication and investigation of magnonic crystals, made by writing FIB implantation with rare earth ions (Nd, Dy, Ho, Er, …).

Ion beam induced collateral damage is becoming an issue in FIB processing, as it limits the application of ion beams for nanostructure fabrication. This is of special importance for the application of focused ion beams for nanostructure fabrication. Here, we present an approach to mitigate the ion beam induced damage inflicted on semi - conductor nanostructures during ion beam irradiation. Nanopillars (with a diameter of 35 nm and a height of 70 nm) have been irradiated with both, a 50 keV Si + broad beam and a 25 keV focused Ne + beam from a helium ion microscope (HIM). Upon irradiation of the nanopillars at room temperature with a medium fluence (2x10 16 ions/cm2), strong plastic deformation has been observed which hinders further device integration. The shape and crystallinity has been studied by HIM and TEM. This differs from predictions made by Monte-Carlo based simulations using the TRI3DYN. However, irradiation at elevated tem- peratures with the same fluence not only preserves the shape of the nanopillars but allows for controlled diameter reduction by as much as 50 % without significant change in pillar height. It is well known that above a critical temperature amorphization of silicon is prevented in- dependent of the applied fluence. At high enough temperatures and for not too high flux this prevents the ion beam hammering and viscous flow of the nanostructures. These two effects are responsible for the shape change observed at low temperature. We find that ir- radiation above 650 K preserves the crystalline nature of the pillars and prevents viscous flow. In addition, a steady thinning process of the nanopillars to a diameter of 10 nm with- out a significant change in height is observed for higher fluencies at elevated temperatures. As the original pillar diameter is smaller than the size of the collision cascade, enhanced forward sputtering through the sidewalls of the pillar is responsible for this pillar-thinning effect. Results for various ion beam e

Helium Ion Microscopy (HIM) [1, 2] is best known for its high resolution imaging capabilities of both conductive as well as insulating samples. However, since the introduction of Ne as an imaging gas for the gas field ion source (GFIS) an increasing number of nano-fabrication applications are realized. While the use of Neon as an imaging gas results in a somewhat lower lateral resolution (1.8 nm for 25 keV Ne compared to 0.5 nm for 30 keV He) the user usually benefits from the much higher cross section for nuclear stopping. The latter results in a larger number of sputtered atoms and bonds broken directly by small impact parameter collisions. After a brief introduction of the technique I will present results obtained using direct write milling low fluence ion beam irradiation and ion beam based mixing. In all three cases the electronic or magnetic properties of the target material will be altered at the nano-scale in a controlled way to achieve new functionality. The examples comprise ∙ The fabrication of semiconducting graphene nano-ribbons by direct milling [3] ∙ The fabrication of a lateral spin valve structure using low fluence ion irradiation [4] ∙ The formation of individual 3 nm Si clusters for a room temperature single electron transistor [5] For all presented examples the critical length scale of the nanostructure is smaller or in the range of collision cascade. This size regime can not be accessed with traditional broad beam based ion irradiation and holds many promises but also challenges that need to be overcome to enable new device concepts and new functional materials on the nano-scale. This work is supported by the European Union’s H-2020 research project ‘IONS4SET’ under Grant Agreement No. 688072