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1. n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

2. Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

3. The Historical Heritage оf Portugal as a Factor of Division and Consolidation оf Society

4. The New Populism in New Europe: Hungarian and Polish Examples in the Scientific Discourse

5. COVID-Subsidiarity as A New Political Phenomenon

6. Foreign Policy of Russia: ‘Soft Power’ of the Regions

7. Cagelike Octacopper Methylsilsesquioxanes: Self-Assembly in the Focus of Alkaline Metal Ion Influence—Synthesis, Structure, and Catalytic Activity

8. SPECIFICS OF PRESCRIBING ANTIRETROVIRAL DRUGS IN THE TREATMENT OF HIV INFECTION.

10. SUB-STATE ACTORS IN INTERNATIOAN RELATIONS AND THE EVOLUTION OF FEDERALISM (COOPERATION BETWEEN THE KOMI REPUBLIC AND HUNGARY IN THE FIRST HALF OF THE 1990S.)

11. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

12. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

14. THE THIRD LEVEL OF INTERNATIONAL RELATIONS: CHARACTERISTICS OF SUB-STATE ACTORS

15. The Issues of the Diocesan Organization of the Breton Сhurch in the 9th Century

16. Third Level of International Relations: Characteristics of Sub-State Actors

18. Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

20. Promising Approaches in International Conflict Studies: Communication Perspective

22. 'A Disunited Kingdom': the Muslim Diaspora of Great Britain in Scientific Discussion

32. Determination of hole diffusion length in n-GaN

33. Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

38. InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

39. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

40. 2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

41. III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

44. Two-dimensional plasmons in a GaN/AlGaN heterojunction

47. Development of digital technologies for designing of heat supply systems

48. Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

49. Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

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