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In this review paper, we provide an overview of state-of-the-art Pd-based materials for optical H2 sensors. The first part of the manuscript introduces the operating principles, providing background information on the thermodynamics and the primary mechanisms of optical detection. Optical H2 sensors using thin films (i.e., films without any nanostructuring) are discussed first, followed by those employing nanostructured materials based on aggregated or isolated nanoparticles (ANPs and INPs, respectively), as well as complex nanostructured (CN) architectures. The different material types are discussed on the basis of the properties they can attribute to the resulting sensors, including their limit of detection, sensitivity, and response time. Limitations induced by cracking and the hysteresis effect, which reduce the repeatability and reliability of the sensors, as well as by CO poisoning that deteriorates their performance in the long run, are also discussed together with an overview of manufacturing approaches (e.g., tailoring the composition and/or applying functionalizing coatings) for addressing these issues.

High quality phase pure samarium sulphide (SmS) thin films with low surface roughness were prepared by electron beam evaporation using a samarium metal source in an H2S atmosphere. SmS shows a strong piezoresistive response due to a phase transition between a semiconducting and metallic state, which can be employed in piezo-electronic devices and stress sensing. Measurement of fundamental mechanical properties such as Young's modulus is thus a major objective to assess the elastic behaviour of SmS under external stress. Nanoindentation was used to measure the elastic modulus of thin semiconducting films with nominal thickness of 100 nm, 200 nm and 400 nm on silicon substrate at different loads. The indentation results were fitted to a modified King's model to exclude the effect of the substrate, giving Young's moduli of the films in the range of 79–82 GPa, consistent with measurements with a Laser Surface Acoustic Wave system (LAwave) and results from literature.

While SmS thin films show an irreversible semiconductor-metal transition upon application of pressure, the switching characteristics can be modified by alloying with other elements, such as europium. This manuscript reports on the resistance response of tri-layer SmS/EuS/SmS thin films upon applying pressure and on the correlation between the resistance response and the interdiffusion between the layers. SmS thin films were deposited by e-beam sublimation of Sm in an H2S atmosphere, while EuS was directly sublimated by e-beam from EuS. Structural properties of the separate thin films were first studied before the deposition of the final nanocomposite tri-layer system. Piezoresistance measurements demonstrated two sharp resistance drops. The first drop, at lower pressure, corresponds to the switching characteristic of SmS. The second drop, at higher pressure, is attributed to EuS, partially mixed with SmS. This behavior provides either a well-defined three or two states system, depending on the degree of mixing. Depth profiling using x-ray photoelectron spectroscopy (XPS) revealed partial diffusion between the compounds upon deposition at a substrate temperature of 400 &deg, C. Thinner tri-layer systems were also deposited to provide more interdiffusion. A higher EuS concentration led to a continuous transition as a function of pressure. This study shows that EuS-modified SmS thin films are possible systems for piezo-electronic devices, such as memory devices, RF (radio frequency) switches and piezoresistive sensors.

Samarium monosulfide (SmS) is a switchable material, showing a pressure-induced semiconductor to metal transition. As such, it can be used in different applications such as piezoresistive sensors and memory devices. In this work, we present how e-beam sublimation of samarium metal in a reactive atmosphere can be used for the deposition of semiconducting SmS thin films on 150 mm diameter silicon wafers. The deposition parameters influencing the composition and properties of the thin films are evaluated, such as the deposition rate of Sm metal, the substrate temperature and the H2S partial pressure. We then present the changes in the optical, structural and electrical properties of this compound after the pressure-induced switching to the metallic state. The back-switching and stability of SmS thin films are studied as a function of temperature and atmosphere via in-situ X-ray diffraction. The thermally induced back switching initiates at 250 &deg, C, while above 500 &deg, C, Sm2O2S is formed. Lastly, we explore the possibility to determine the valence state of the samarium ions by means of X-ray photoelectron spectroscopy.

In this review, we give an overview of the properties and applications of samarium monosulfide, SmS, which has gained considerable interest as a switchable material. It shows a pressure-induced phase transition from the semiconducting to the metallic state by polishing, and it switches back to the semiconducting state by heating. The material also shows a magnetic transition, from the paramagnetic state to an antiferromagnetically ordered state. The switching behavior between the semiconducting and metallic states could be exploited in several applications, such as high density optical storage and memory materials, thermovoltaic devices, infrared sensors and more. We discuss the electronic, optical and magnetic properties of SmS, its switching behavior, as well as the thin film deposition techniques which have been used, such as e-beam evaporation and sputtering. Moreover, applications and possible ideas for future work on this material are presented. Our scope is to present the properties of SmS, which were mainly measured in bulk crystals, while at the same time we describe the possible deposition methods that will push the study of SmS to nanoscale dimensions, opening an intriguing range of applications for low-dimensional, pressure-induced semiconductor–metal transition compounds.

In this work samarium sulfide thin films have been deposited by using e-beam evaporation under H2S atmosphere. Optical and structural properties were studied in several environments. The stability in several environments allows further processing into piezoelectronic devices.