Search

Your search keyword '"Alexander N. Smirnov"' showing total 60 results
Start Over Author "Alexander N. Smirnov" Search Limiters Full Text
60 results on '"Alexander N. Smirnov"'

1. Multi-Frequency Light Sources Based on CVD Diamond Matrices with a Mix of SiV− and GeV− Color Centers and Tungsten Complexes

Author

Kirill V. Bogdanov, Ilya E. Kaliya, Mikhail A. Baranov, Sergey A. Grudinkin, Nikolay A. Feoktistov, Valery G. Golubev, Valery Yu. Davydov, Alexander N. Smirnov, and Alexander V. Baranov

Subjects
CVD diamonds, luminescent tungsten complexes, electron-vibrational coupling, temperature dependence, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
Abstract

Recently, nanodiamonds with negatively charged luminescent color centers based on atoms of the fourth group (SiV−, GeV−) have been proposed for use as biocompatible luminescent markers. Further improvement of the functionality of such systems by expanding the frequencies of the emission can be achieved by the additional formation of luminescent tungsten complexes in the diamond matrix. This paper reports the creation of diamond matrices by a hot filament chemical vapor deposition method, containing combinations of luminescing Si-V and Ge-V color centers and tungsten complexes. The possibility is demonstrated of creating a multicolor light source combining the luminescence of all embedded emitters. The emission properties of tungsten complexes and Si-V and Ge-V color centers in the diamond matrices were investigated, as well as differences in their luminescent properties and electron-phonon interaction at different temperatures.

Published
2022
Full Text
View/download PDF

2. Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Author

Fadis F. Murzakhanov, Boris V. Yavkin, Georgiy V. Mamin, Sergei B. Orlinskii, Ivan E. Mumdzhi, Irina N. Gracheva, Bulat F. Gabbasov, Alexander N. Smirnov, Valery Yu. Davydov, and Victor A. Soltamov

Subjects
van der Waals materials, hBN, boron vacancies, optical spin polarization, electron spin resonance, crystalline quality control, Chemistry, QD1-999
Abstract

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

Published
2021
Full Text
View/download PDF

3. A Computational and Spectroscopic Study of the Electronic Structure of V2O5-Based Cathode Materials

Author

Valery Yu. Davydov, Jean-Pierre Pereira-Ramos, Evgenii M. Roginskii, Alexander N. Smirnov, Mikhail B. Smirnov, Rita Baddour-Hadjean, Konstantin S. Smirnov, Institut de Chimie et des Matériaux Paris-Est (ICMPE), and Institut de Chimie du CNRS (INC)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, 02 engineering and technology, Electronic structure, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Cathode, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, General Energy, law, [CHIM]Chemical Sciences, Physical chemistry, Physical and Theoretical Chemistry, 0210 nano-technology
Abstract

International audience; The electronic structure of α-V 2 O 5 , γ-V 2 O 5 and γ-MeV 2 O 5 (Me = Li, Na) bronzes is studied by quantum-chemical calculations completed by spectroscopic experiments. The calculations are performed using G 0 W 0 method with DFT+U self-consistent wavefunction as an initial approximation. The electronic band gap E g = 2.89 eV calculated for α-V 2 O 5 is found to be in a fair agreement with available experimental data. The strategy was then applied to studying the electronic structure of the γ-V 2 O 5 phase

Published
2021

4. SPECTROSCOPIC AND THERMOCHEMICAL PROPERTIES OF ACTINIDE-CONTAINING SPECIES FROM FIRST PRINCIPLES: THORIUM AND AMERICIUM MONOXIDE MOLECULES

Author

Alexander N. Smirnov and Victor G. Solomonik

Subjects
chemistry, General Chemical Engineering, Radiochemistry, Thorium, chemistry.chemical_element, Molecule, Monoxide, Americium, General Chemistry, Actinide
Abstract

A relativistic version of a composite ab initio treatment of molecular spectroscopy and thermochemistry is developed, focusing on high-accuracy description of the properties of actinide (An) containing species. It is based on combining the calculation results at levels of theory with sufficiently full account of electron correlation, e.g., at the CCSDT(Q) level, but tackling only scalar relativity, with those obtained from more rigorous four-component relativistic calculations with the Dirac–Coulomb Hamiltonian. High accuracy achievable via this approach is revealed taking the examples of thorium and americium monoxide molecules. The errors in ab initio values for the bond length re, vibrational frequency ωe, and atomization energy D0 of the ThO molecule did not exceed 0.001 Å, 2.5 cm–1, and 0.5 kcal/mol, respectively. The composite numerical values for the first ionization potentials of the AmO molecule and the Am atom deviate from the experimental data just by 0.03 eV and 1 cm–1, respectively. For the first time, the proposed approach enabled high-accuracy evaluation of the molecular constants re, ωe and D0 for AmO and AmO+, as well as the second and third ionization potentials of the Am atom. The calculation results are indicative of a minor actinide contraction of the An–O bonds on going through the molecular series ThO → UO → AmO: the bond length in AmO is by 0.0073 Å shorter than that in ThO. The re(An–O) value is shown to be linearly dependent on the actinide atomic number in the periodic table. The results obtained may be used as benchmarks for parametrizing and calibrating the DFT functionals designed for treating An-containing molecules.

Published
2020

5. The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Author

Valery Yu. Davydov, Alexander N. Smirnov, Mikhail B. Smirnov, I. A. Eliseyev, V. N. Jmerik, T. V. Shubina, Yuri E. Kitaev, W. V. Lundin, Evgenii M. Roginskii, Markus Pristovsek, Dmitrii V. Nechaev, and Eugene E Zavarin

Subjects
Materials science, Phonon, General Chemical Engineering, Superlattice, group theory analysis, random-element isodisplacement model, Article, symbols.namesake, Condensed Matter::Materials Science, Ab initio quantum chemistry methods, molecular beam epitaxy, General Materials Science, metal-organic vapor phase epitaxy, Metalorganic vapour phase epitaxy, Diffusion (business), Physics::Chemical Physics, QD1-999, density functional theory, Wurtzite crystal structure, Condensed matter physics, interface diffusion, Chemistry, GaN/AlN superlattices, Raman spectroscopy, symbols, lattice dynamics, Molecular beam epitaxy
Abstract

We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy.

Published
2021
Full Text
View/download PDF

7. Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Author

I. N. Gracheva, B. F. Gabbasov, V. A. Soltamov, Alexander N. Smirnov, G. V. Mamin, Ivan E. Mumdzhi, Sergei Orlinskii, Valery Yu. Davydov, Fadis Murzakhanov, and B. V. Yavkin

Subjects
van der Waals materials, Materials science, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Molecular physics, Article, law.invention, Crystal, law, Vacancy defect, 0103 physical sciences, Electron beam processing, General Materials Science, 010306 general physics, Boron, Electron paramagnetic resonance, QD1-999, boron vacancies, optical spin polarization, business.industry, electron spin resonance, Resonance, 021001 nanoscience & nanotechnology, hBN, Chemistry, Semiconductor, chemistry, crystalline quality control, 0210 nano-technology, business, Single crystal
Abstract

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

Published
2021

8. Lattice dynamics of cobalt orthoborate Co-3(BO3)(2) with kotoite structure

Author

Alexander N. Smirnov, R. M. Dubrovin, Roman V. Pisarev, V. Yu. Davydov, Marina N. Popova, V. P. Petrov, S.G. Nefedov, Dmitry Chernyshov, V. A. Chernyshev, Kirill N. Boldyrev, A. D. Molchanova, and M. A. Prosnikov

Subjects
Phase transition, Materials science, Phonon, Mechanical Engineering, Metals and Alloys, Ab initio, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Bond length, Condensed Matter::Materials Science, symbols.namesake, Crystallography, Soft Condensed Matter and Nanomaterials, Mechanics of Materials, Materials Chemistry, symbols, Condensed Matter::Strongly Correlated Electrons, Isostructural, 0210 nano-technology, Raman spectroscopy, Single crystal, Raman scattering
Abstract

Transition metal oxyborates M3(BO3)2 (M = Mn, Co, Ni) belong to a group of materials with the kotoite structure and many of them demonstrate complex magnetic behavior as a result of competing interactions between magnetic ions in nonequivalent crystallographic positions. In this paper, we report results of the detailed infrared and Raman spectroscopic studies of a Co3(BO3)2 single crystal. Most of the phonons are observed and identified. Unusually large phonon shifts, in comparison to isostructural compound Ni3(BO3)2, were registered in the low- and mid-infrared frequency range (100–700 cm−1) of the spectra. The experimental findings are supported by the ab initio simulations of the lattice dynamics, which allow us to propose the normal-mode assignments. We argue that the large phonon shift between cobalt and nickel compounds are associated with changes of force constants induced by the changes of M–O bond lengths within the two types of octahedral MO6 groups. In addition to the first-order Raman scattering, intense second-order Raman scattering was detected due to the resonant enhancement regime. Furthermore, we performed the single crystal XRD experiments which did not show any detected evidences of magneto-structural phase transition previously observed in Ni3(BO3)2.

Published
2021

9. Beam physics research with the IOTA electron lens

Author

Alexander N. Smirnov, Ben Freemire, N. Banerjee, R. Agustsson, Yongsun Kim, V. A. Lebedev, Eric Stern, Y. Chen, Giulio Stancari, R.C. Dhuley, Darren Crawford, Alexander Romanov, Sergei Nagaitsev, Jinhao Ruan, B. Cathey, Chong Shik Park, Diego Perini, Moses Chung, A. Kolehmainen, C. Hall, K. Carlson, Alexey Burov, C. Boffo, A. Murokh, N. Eddy, Vladimir Shiltsev, and Alexander Valishev

Subjects
Physics, business.industry, Electron, Accelerators and Storage Rings, law.invention, Lens (optics), Optics, Beam physics, law, Physics::Accelerator Physics, Detectors and Experimental Techniques, business, Instrumentation, Mathematical Physics
Abstract

The electron lens in the Fermilab Integrable Optics Test Accelerator (IOTA) will enable new research in nonlinear integrable optics, space-charge compensation, electron cooling, and the stability of intense beams. This research addresses scientific questions on high-brightness beams and operational challenges of high-power accelerators for nuclear and particle physics. We review the roles that electron lenses play in this field and the physical principles behind their applications. The design criteria and specifications for the IOTA storage ring and electron lens are then discussed. We conclude with a description of the components of the apparatus.

Published
2021

10. Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra

Author

Dmitrii V. Nechaev, Mikhail B. Smirnov, Valery Yu. Davydov, I. A. Eliseyev, V. N. Jmerik, Evgenii M. Roginskii, Alexander N. Smirnov, and Yuri E. Kitaev

Subjects
Materials science, Phonon, General Chemical Engineering, Superlattice, 02 engineering and technology, group theory analysis, Epitaxy, 01 natural sciences, Molecular physics, lcsh:Chemistry, symbols.namesake, Condensed Matter::Materials Science, Ab initio quantum chemistry methods, molecular beam epitaxy, 0103 physical sciences, General Materials Science, Physics::Chemical Physics, density functional theory, 010302 applied physics, 021001 nanoscience & nanotechnology, GaN/AlN superlattices, lcsh:QD1-999, Molecular vibration, Raman spectroscopy, symbols, Density functional theory, lattice dynamics, 0210 nano-technology, Molecular beam epitaxy
Abstract

We report the results of experimental and theoretical studies of phonon modes in GaN/AlN superlattices (SLs) with a period of several atomic layers, grown by submonolayer digital plasma-assisted molecular-beam epitaxy, which have a great potential for use in quantum and stress engineering. Using detailed group-theoretical analysis, the genesis of the SL vibrational modes from the modes of bulk AlN and GaN crystals is established. Ab initio calculations in the framework of the density functional theory, aimed at studying the phonon states, are performed for SLs with both equal and unequal layer thicknesses. The frequencies of the vibrational modes are calculated, and atomic displacement patterns are obtained. Raman spectra are calculated and compared with the experimental ones. The results of the ab initio calculations are in good agreement with the experimental Raman spectra and the results of the group-theoretical analysis. As a result of comprehensive studies, the correlations between the parameters of acoustic and optical phonons and the structure of SLs are obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy. The results obtained can be used to optimize the growth technologies aimed to form structurally perfect short-period GaN/AlN SLs.

Published
2021

11. Whispering gallery mode emission of low density InP/GaInP quantum dots

Author

Alexander Mintairov, V. I. Smirnov, Alexander N. Smirnov, Yu. A. Guseva, M. M. Kulagina, S. I. Troshkov, Valery Yu. Davydov, Emanuele Pelucchi, A. S. Vlasov, I. Breev, Gediminas Juska, Agnieszka Gocalinska, and D. V. Lebedev

Subjects
Physics, Microphotoluminescence, business.industry, Quantum dot, Purcell effect, GaInP microdisks, Whispering gallery mode, Low density, Optoelectronics, Whispering-gallery wave, business, Luminescence, Lasing threshold
Abstract

GaInP microdisks contained InP/GaInP quantum dots having lateral size ∼150 nm and 1-5 μm−2 were investigated with help of microphotoluminescence technique. Experiments carried out in confocal, time-resolved and low-temperature modes. Comparison of results allowed to conclude that overlap of quantum dot emission area with whispering gallery mode antinode results in faster luminescence lifetime (Purcell effect). Whispering gallery mode lasing was detected. Obtained threshold power values were following 6 µW (Q=4500, T=8.5 K) and 0.4 µW (Q=7400, T=80 K).

Published
2020

12. Lipid regulators during atherogenesis: expression of LXR, PPAR, and SREBP mRNA in the human aorta.

Author

Tatyana A Shchelkunova, Ivan A Morozov, Petr M Rubtsov, Yuri V Bobryshev, Igor A Sobenin, Alexander N Orekhov, Irina V Andrianova, and Alexander N Smirnov

Subjects
Medicine, Science
Abstract

Transcription factors LXRs, PPARs, and SREBPs have been implicated in a multitude of physiological and pathological processes including atherogenesis. However, little is known about the regulation of these transcription factors at different stages of atherosclerosis progression. Quantitative real-time polymerase chain reaction (qRT-PCR) was used to compare the contents of mRNAs in pairs intact-injured aorta fragments taken from the same donors. Only minor changes in LXRα, LXRβ, PPARα, PPARγ, SREBP1, and SREBP2 mRNA levels were found in initial lesions as compared with intact non-diseased tissue. The contents of all mRNAs but SREBP2 mRNA were found to be progressively up-regulated in fatty streaks and fibrous lipoid plaques. These changes were only partially reproduced in cultured macrophages upon lipid loading. Wave-shaped changes in abundance of correlations between given group of mRNAs and 28 atherosclerosis-related mRNA species in the course of atherogenesis were observed. The impact of specific mRNA correlations on the total correlations also significantly varied between different lesion types. The study suggests that the extent and forms of LXR/PPAR/SREBP participation in intima functions vary nonlinear in individual fashion in atherogenesis. We speculate that the observed changes in mRNAs expression and coupling reflect shifts in lipid ligands availability and cellular composition in the course of atherosclerosis progression.

Published
2013
Full Text
View/download PDF

13. Measurement of the charged-current electron (anti-)neutrino inclusive cross-sections at the T2K off-axis near detector ND280

Author

M. Gonin, Lars Eklund, C. Bronner, T. Vladisavljevic, E. Rondio, N. McCauley, C. M. Nantais, Thorsten Lux, K. Porwit, A. Eguchi, C. Touramanis, M. Jiang, Antonio Ereditato, N. Yershov, M. McCarthy, T. Lindner, T. Kikawa, Kevin Scott McFarland, S. Suvorov, R. P. Litchfield, S. Ban, M. Barbi, P. Hamacher-Baumann, L. Molina Bueno, B. Radics, B. Bourguille, A. Mefodiev, Vladimir Volkov, S. R. Johnson, J. Morrison, J. McElwee, C. E. R. Naseby, Lester D.R. Thompson, M. Mezzetto, N. Dokania, S. M. Oser, G. Pintaudi, Y. Ashida, A. Gorin, M. Ikeda, K. Nakayoshi, Kimihiro Okumura, M. J. Wilking, C. Alt, N. Teshima, A. T. Suzuki, Y. Nagai, Y. Fukuda, G. Christodoulou, P. B. Jurj, G. Zarnecki, M. Buizza Avanzini, F. Iacob, L. Berns, T. Towstego, S. Murphy, S. Bolognesi, C. K. Jung, B. Quilain, J. Kameda, T. Okusawa, Alexander N. Smirnov, K. Nakamura, K. Sakashita, M. Kuze, G.D. Barr, K. Niewczas, M. M. Khabibullin, R. Wendell, Y. Tanihara, Th. A. Mueller, N. Kukita, M. Licciardi, T. Feusels, T. Hayashino, R. Fukuda, C. Wilkinson, C. Giganti, S. Kuribayashi, R. Akutsu, M. Vagins, M. Yu, T. Kobata, S. Mine, D. Brailsford, T. Radermacher, A. Bubak, K. Iwamoto, A. Knox, T. Arihara, Y. Hayato, L. Ludovici, S. Parsa, J. Steinmann, T. Honjo, Y. Nakajima, G. Fiorillo, Hiroyuki Sekiya, F. Nova, Y. Oyama, Hyun-Chul Kim, V. Paolone, P. Novella, Jaroslaw Pasternak, K. Mavrokoridis, Y. Fujii, A. Konaka, J. L. Palomino, R. Fujita, D. Karlen, L. Pickering, C. Ruggles, G. Santucci, S. L. Liu, Z. Vallari, K. Wood, Masayuki Nakahata, C. Pidcott, Y. Uchida, E. D. Zimmerman, E. Mazzucato, A. Takeda, J. C. Nugent, Keigo Nakamura, C. Vilela, Kendall Mahn, A. Rychter, C. Checchia, A. Longhin, M. Friend, A. Shaykina, J. Lagoda, S. R. Dennis, Yoshihiro Suzuki, K. M. Tsui, C. M. Schloesser, Robert Wilson, C. Barry, A. Hiramoto, R.P. Kurjata, Marco Laveder, S. King, A. Izmaylov, A. C. Kaboth, S. P. Kasetti, J. Zalipska, R. Shah, T. Kobayashi, M. G. Catanesi, T. Hasegawa, A. Blondel, D. Sgalaberna, C. Jesús-Valls, Alexander Finch, L. N. Machado, J. Holeczek, Michelangelo Pari, Shuji Tanaka, G. De Rosa, J. G. Walsh, Y. Takeuchi, R. A. Owen, X. Junjie, H. Kikutani, A. Cervera, K. Yamamoto, D. R. Hadley, L. Marti-Magro, F. Bench, K. Zaremba, J. T. Haigh, O. Drapier, S. Yen, D. Cherdack, Y. Kato, S. Valder, A. Pritchard, T. Campbell, Y. Kataoka, M. Batkiewicz-Kwasniak, E. T. Atkin, K. Yasutome, V. A. Matveev, C. Metelko, C. Wret, T. Nakadaira, N. Akhlaq, T. Kajita, M. Lawe, T. Wachala, L. Maret, M. Tani, T. Sekiguchi, Stephanie Bron, C. Riccio, T. Dealtry, K. Abe, C. McGrew, M. Pavin, S. J. Jenkins, L. Koch, M. Guigue, T. Tsukamoto, Akitaka Ariga, D. Coplowe, A. Beloshapkin, M. Miura, F. Di Lodovico, A. A. Sztuc, Federico Sanchez, E. S. Pinzon Guerra, M. Tada, Vincenzo Berardi, G. A. Fiorentini, P. Paudyal, A. Bravar, M. Kabirnezhad, C. Andreopoulos, A. Zykova, W. Toki, Y. Awataguchi, D. Barrow, T. Ishii, P. N. Ratoff, Yu. G. Kudenko, Etam Noah, F. J. P. Soler, T. Kutter, S. L. Cartwright, T. Bonus, N. C. Hastings, D. G. Payne, H. Kubo, A. Nakamura, S. Nakayama, J. Calcutt, Y. Asada, Hiromasa Tanaka, P. Jonsson, Ahmed Ali, M. Hogan, Shigeki Aoki, G. C. Penn, L. Labarga, Alan Cosimo Ruggeri, Y. Nishimura, Gareth J. Barker, M. B. Smy, A. Knight, Y. Seiya, L. Munteanu, H. Sobel, T. Ishida, T. Odagawa, Xiao-yan Li, T. S. Nonnenmacher, S. Bienstock, M. Tajima, Yusuke Koshio, Teppei Katori, L. L. Kormos, H. M. O'Keeffe, E. Radicioni, M. Lamoureux, Y. Sonoda, J. P. Coleman, Laura Gutermuth Anthony, K. Kowalik, S. Zsoldos, S. Roth, C. Pistillo, A. Dabrowska, F. Shaker, T. Matsubara, D. L. Wark, G. Vasseur, V. Palladino, Patrick Dunne, N. Chikuma, J. A. Nowak, W. C. Parker, M. O. Wascko, A. Chappell, E. Kearns, Sy Suzuki, A. N. Khotjantsev, A. K. Ichikawa, J. F. Martin, M. Tzanov, M. Jakkapu, J. R. Wilson, M. Ishitsuka, W. Shorrock, J. Kisiel, Yuuki Nakano, S. Manly, P. F. Denner, A. Minamino, T. Yano, M. Antonova, K. Matsushita, A. D. Marino, R. Okada, T. Ogawa, Y. Katayama, S. Emery-Schrenk, M. Malek, S. Moriyama, Samira Hassani, T. A. Doyle, Jan T. Sobczyk, S. Dolan, C. Densham, A. Cudd, T. Koga, Oleg Mineev, C. Francois, M. Ziembicki, Yufeng Wang, M. Zito, Hidekazu Kakuno, Y. Yamada, G. Yang, S. B. Boyd, N. Izumi, B. A. Popov, B. Jamieson, A. Zalewska, T. Golan, A. Shvartsman, K. Fusshoeller, D. Bravo Berguño, Pablo Fernandez, Kate Scholberg, H. K. Tanaka, D. Vargas, A. C. Weber, J. Dumarchez, J. Schwehr, M. Posiadala-Zezula, G. Collazuol, Mark Scott, T. Yoshida, M. Cicerchia, W. G. S. Vinning, T. Maruyama, T. V. Ngoc, A. Shaikhiev, E. Reinherz-Aronis, K. Nishikawa, Masashi Yokoyama, N. T. Hong Van, J. Walker, Tsuyoshi Nakaya, C. Mauger, Masato Shiozawa, A. Kostin, D. Fukuda, S. Bhadra, L. Cook, L. O'Sullivan, Xianguo Lu, M. Hartz, André Rubbia, L. Magaletti, C. Yanagisawa, S. V. Cao, Ministerio de Economía y Competitividad (España), Abe, K., Akutsu, R., Ali, A., Alt, C., Andreopoulos, C., Anthony, L., Antonova, M., Aoki, S., Ariga, A., Ashida, Y., Atkin, E. T., Awataguchi, Y., Ban, S., Barbi, M., Barker, G. J., Barr, G., Barry, C., Batkiewicz-Kwasniak, M., Beloshapkin, A., Bench, F., Berardi, V., Berkman, S., Berns, L., Bhadra, S., Bienstock, S., Blondel, A., Bolognesi, S., Bourguille, B., Boyd, S. B., Brailsford, D., Bravar, A., Berguno, D. Bravo, Bronner, C., Bubak, A., Avanzini, M. Buizza, Calcutt, J., Campbell, T., Cao, S., Cartwright, S. L., Catanesi, M. G., Cervera, A., Chappell, A., Checchia, C., Cherdack, D., Chikuma, N., Christodoulou, G., Coleman, J., Collazuol, G., Cook, L., Coplowe, D., Cudd, A., Dabrowska, A., De Rosa, G., Dealtry, T., Denner, P. F., Dennis, S. R., Densham, C., Di Lodovico, F., Dokania, N., Dolan, S., Drapier, O., Dumarchez, J., Dunne, P., Eklund, L., Emery-Schrenk, S., Ereditato, A., Fernandez, P., Feusels, T., Finch, A. J., Fiorentini, G. A., Fiorillo, G., Francois, C., Friend, M., Fujii, Y., Fujita, R., Fukuda, D., Fukuda, R., Fukuda, Y., Gameil, K., Giganti, C., Golan, T., Gonin, M., Gorin, A., Guigue, M., Hadley, D. R., Haigh, J. T., Hamacher-Baumann, P., Hartz, M., Hasegawa, T., Hastings, N. C., Hayashino, T., Hayato, Y., Hiramoto, A., Hogan, M., Holeczek, J., Hong Van, N. T., Iacob, F., Ichikawa, A. K., Ikeda, M., Ishida, T., Ishii, T., Ishitsuka, M., Iwamoto, K., Izmaylov, A., Jamieson, B., Jenkins, S. J., Jesus-Valls, C., Jiang, M., Johnson, S., Jonsson, P., Jung, C. K., Kabirnezhad, M., Kaboth, A. C., Kajita, T., Kakuno, H., Kameda, J., Karlen, D., Kasetti, S. P., Kataoka, Y., Katori, T., Kato, Y., Kearns, E., Khabibullin, M., Khotjantsev, A., Kikawa, T., Kim, H., Kim, J., King, S., Kisiel, J., Knight, A., Knox, A., Kobayashi, T., Koch, L., Koga, T., Konaka, A., Kormos, L. L., Koshio, Y., Kowalik, K., Kubo, H., Kudenko, Y., Kukita, N., Kuribayashi, S., Kurjata, R., Kutter, T., Kuze, M., Labarga, L., Lagoda, J., Lamoureux, M., Laveder, M., Lawe, M., Licciardi, M., Lindner, T., Litchfield, R. P., Liu, S. L., Li, X., Longhin, A., Ludovici, L., Lu, X., Lux, T., Nascimento Machado, L., Magaletti, L., Mahn, K., Malek, M., Manly, S., Maret, L., Marino, A. D., Martin, J. F., Maruyama, T., Matsubara, T., Matsushita, K., Matveev, V., Mavrokoridis, K., Mazzucato, E., Mccarthy, M., Mccauley, N., Mcfarland, K. S., Mcgrew, C., Mefodiev, A., Metelko, C., Mezzetto, M., Minamino, A., Mineev, O., Mine, S., Miura, M., Bueno, L. Molina, Moriyama, S., Morrison, J., Mueller, Th. A., Munteanu, L., Murphy, S., Nagai, Y., Nakadaira, T., Nakahata, M., Nakajima, Y., Nakamura, A., Nakamura, K. G., Nakamura, K., Nakayama, S., Nakaya, T., Nakayoshi, K., Nantais, C., Ngoc, T. V., Niewczas, K., Nishikawa, K., Nishimura, Y., Nonnenmacher, T. S., Nova, F., Novella, P., Nowak, J., Nugent, J. C., O'Keeffe, H. M., O'Sullivan, L., Odagawa, T., Okumura, K., Okusawa, T., Oser, S. M., Owen, R. A., Oyama, Y., Palladino, V., Palomino, J. L., Paolone, V., Parker, W. C., Paudyal, P., Pavin, M., Payne, D., Penn, G. C., Pickering, L., Pidcott, C., Guerra, E. S. Pinzon, Pistillo, C., Popov, B., Porwit, K., Posiadala-Zezula, M., Pritchard, A., Quilain, B., Radermacher, T., Radicioni, E., Radics, B., Ratoff, P. N., Reinherz-Aronis, E., Riccio, C., Rondio, E., Roth, S., Rubbia, A., Ruggeri, A. C., Rychter, A., Sakashita, K., Sanchez, F., Schloesser, C. M., Scholberg, K., Schwehr, J., Scott, M., Seiya, Y., Sekiguchi, T., Sekiya, H., Sgalaberna, D., Shah, R., Shaikhiev, A., Shaker, F., Shaykina, A., Shiozawa, M., Shorrock, W., Shvartsman, A., Smirnov, A., Smy, M., Sobczyk, J. T., Sobel, H., Soler, F. J. P., Sonoda, Y., Steinmann, J., Suvorov, S., Suzuki, A., Suzuki, S. Y., Suzuki, Y., Sztuc, A. A., Tada, M., Tajima, M., Takeda, A., Takeuchi, Y., Tanaka, H. K., Tanaka, H. A., Tanaka, S., Thompson, L. F., Toki, W., Touramanis, C., Tsui, K. M., Tsukamoto, T., Tzanov, M., Uchida, Y., Uno, W., Vagins, M., Valder, S., Vallari, Z., Vargas, D., Vasseur, G., Vilela, C., Vinning, W. G. S., Vladisavljevic, T., Volkov, V. V., Wachala, T., Walker, J., Walsh, J. G., Wang, Y., Wark, D., Wascko, M. O., Weber, A., Wendell, R., Wilking, M. J., Wilkinson, C., Wilson, J. R., Wilson, R. J., Wood, K., Wret, C., Yamada, Y., Yamamoto, K., Yanagisawa, C., Yang, G., Yano, T., Yasutome, K., Yen, S., Yershov, N., Yokoyama, M., Yoshida, T., Yu, M., Zalewska, A., Zalipska, J., Zaremba, K., Zarnecki, G., Ziembicki, M., Zimmerman, E. D., Zito, M., Zsoldos, S., Zykova, A., Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE (UMR_7585)), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Laboratoire Leprince-Ringuet (LLR), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), T2K, Science and Technology Facilities Council (STFC), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and ANR-19-CE31-0001,SUNCORE,Incertitudes systématiques dans les combinaisons de résultats d'oscillations de neutrinos(2019)

Subjects
electron, Physics::Instrumentation and Detectors, Monte Carlo method, far detector, Electron, KAMIOKANDE, antineutrino/mu: secondary beam, Other experiments, antineutrino/e: particle identification, 01 natural sciences, neutrino: flux, High Energy Physics - Experiment, charged current, High Energy Physics - Experiment (hep-ex), secondary beam [neutrino/mu], [PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], neutrino/e: particle identification, measured [total cross section], detector [neutrino], Charged current, Physics, 0105 Mathematical Physics, J-PARC Lab, Detector, Monte Carlo [numerical calculations], Nuclear & Particles Physics, angular dependence, neutrino: detector, 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics, Neutrino, numerical calculations: Monte Carlo, Particle Physics - Experiment, scattering [neutrino], Nuclear and High Energy Physics, 530 Physics, Astrophysics::High Energy Astrophysical Phenomena, particle identification [antineutrino/e], FOS: Physical sciences, momentum dependence, secondary beam [antineutrino/mu], Nuclear physics, Momentum, differential cross section: measured, phase space, near detector, measured [differential cross section], 0103 physical sciences, neutrino: scattering, ddc:530, lcsh:Nuclear and particle physics. Atomic energy. Radioactivity, 010306 general physics, 0206 Quantum Physics, hep-ex, 010308 nuclear & particles physics, Scattering, particle identification [neutrino/e], background, Computer Science::Information Retrieval, High Energy Physics::Phenomenology, scintillation counter: target, flux [neutrino], neutrino/mu: secondary beam, total cross section: measured, target [scintillation counter], lcsh:QC770-798, High Energy Physics::Experiment, Electron neutrino, experimental results
Abstract

The electron (anti-)neutrino component of the T2K neutrino beam constitutes the largest background in the measurement of electron (anti-)neutrino appearance at the far detector. The electron neutrino scattering is measured directly with the T2K off-axis near detector, ND280. The selection of the electron (anti-)neutrino events in the plastic scintillator target from both neutrino and anti-neutrino mode beams is discussed in this paper. The flux integrated single differential charged-current inclusive electron (anti-)neutrino cross-sections, dσ/dp and dσ/d cos(θ), and the total cross-sections in a limited phase-space in momentum and scattering angle (p > 300 MeV/c and θ ≤ 45°) are measured using a binned maximum likelihood fit and compared to the neutrino Monte Carlo generator predictions, resulting in good agreement., Journal of High Energy Physics, 2020 (10), ISSN:1126-6708, ISSN:1029-8479

Published
2020
Full Text
View/download PDF

14. Search for Electron Antineutrino Appearance in a Long-baseline Muon Antineutrino Beam

Author

E. Rondio, N. McCauley, C. M. Nantais, K. Porwit, J. T. Haigh, M. McCarthy, Vladimir Volkov, Lester D.R. Thompson, M. Mezzetto, W. Toki, L. Molina Bueno, K. Nishikawa, A. A. Sztuc, E. S. Pinzon Guerra, M. Vagins, S. Mine, Xianguo Lu, F. Di Lodovico, M. Barbi, M. Tada, B. Radics, Masashi Yokoyama, C. Alt, K. M. Tsui, M. G. Catanesi, Yu. G. Kudenko, N. C. Hastings, N. T. Hong Van, Y. Takeuchi, K. Kowalik, J. Walker, R. Shah, S. V. Cao, V. Paolone, A. Knight, André Rubbia, B. Bourguille, L. Magaletti, M. Gonin, Y. Nishimura, G. De Rosa, J. G. Walsh, S. M. Oser, Tsuyoshi Nakaya, Alexander N. Smirnov, Th. A. Mueller, T. Towstego, Z. Vallari, K. Wood, R. A. Owen, M. Batkiewicz-Kwasniak, D. Karlen, L. Maret, R. Akutsu, H. M. O'Keeffe, Y. Sonoda, P. N. Ratoff, T. Kutter, S. P. Kasetti, C. Ruggles, F. Iacob, L. Berns, E. D. Zimmerman, A. Cervera, A. Mefodiev, M. Ikeda, K. Nakayoshi, Kimihiro Okumura, N. Kukita, M. Licciardi, N. Chikuma, A. N. Khotjantsev, J. C. Nugent, S. King, T. Feusels, S. Bolognesi, Y. Ashida, A. Beloshapkin, Teppei Katori, K. Yamamoto, C. Wret, M. Guigue, J. A. Nowak, M. Miura, A. Shaikhiev, A. Chappell, T. Okusawa, M. O. Wascko, E. Kearns, S. L. Liu, C. Yanagisawa, Lars Eklund, Y. Oyama, J. Calcutt, G. Fiorillo, S. Berkman, B. Quilain, T. A. Doyle, P. Paudyal, C. Bronner, E. Radicioni, K. Niewczas, Hyun-Chul Kim, A. Izmaylov, J. Steinmann, M. M. Khabibullin, M. Zito, Hidekazu Kakuno, P. Novella, K. Nakamura, R. Wendell, E. Reinherz-Aronis, Y. Fukuda, G. Christodoulou, S. L. Cartwright, Vincenzo Berardi, D. Barrow, O. Drapier, L. Pickering, F. J. P. Soler, G. Yang, J. L. Palomino, J. Zalipska, E. T. Atkin, Y. Nakajima, K. Sakashita, M. Kuze, L. Marti-Magro, L. Munteanu, Alan Cosimo Ruggeri, K. Zaremba, Laura Gutermuth Anthony, C. Vilela, D. Fukuda, D. Sgalaberna, Hiroyuki Sekiya, F. Nova, T. Matsubara, C. Wilkinson, C. Touramanis, Y. Kato, M. Tajima, R. Fujita, S. Yen, K. Yasutome, D. L. Wark, S. Bienstock, L. O'Sullivan, A. Knox, M. Jiang, D. R. Hadley, S. Ban, Yusuke Koshio, Kendall Mahn, G. Vasseur, J. Lagoda, Yoshihiro Suzuki, L. N. Machado, Antonio Ereditato, Federico Sanchez, A. C. Weber, D. Brailsford, W. G. S. Vinning, J. Kameda, Y. Hayato, L. Ludovici, S. Murphy, N. Yershov, M. Ishitsuka, C. Giganti, S. Kuribayashi, J. R. Wilson, C. Jesús-Valls, Alexander Finch, S. Nakayama, Masayuki Nakahata, C. Pidcott, W. Shorrock, Kevin Scott McFarland, T. Radermacher, M. Posiadala-Zezula, Robert Wilson, T. Maruyama, Sy Suzuki, T. Wachala, M. Yu, S. Moriyama, Y. Seiya, T. V. Ngoc, M. Antonova, C. Barry, Y. Uchida, C. Checchia, T. Yano, H. Sobel, T. Koga, R.P. Kurjata, G. Collazuol, T. S. Nonnenmacher, Mark Scott, T. Yoshida, P. Hamacher-Baumann, S. R. Dennis, Y. Fujii, C. M. Schloesser, Jungsang Kim, A. D. Marino, A. Longhin, M. Friend, A. Shaykina, A. Blondel, M. Lamoureux, Masato Shiozawa, A. Takeda, B. Jamieson, A. Zalewska, A. C. Kaboth, N. Dokania, G. A. Fiorentini, S. R. Johnson, T. Golan, S. Emery-Schrenk, J. Holeczek, S. Zsoldos, A. Pritchard, V. Palladino, A. Shvartsman, T. Kobayashi, G. C. Penn, T. Sekiguchi, D. Bravo Berguño, W. Uno, Ahmed Ali, C. Pistillo, C. Riccio, Pablo Fernandez, A. Dabrowska, M. B. Smy, A. Kostin, B. A. Popov, C. Metelko, D. Coplowe, T. Dealtry, S. Bhadra, L. Cook, G.D. Barr, M. Jakkapu, D. Vargas, Xiao-yan Li, J. Dumarchez, J. Schwehr, M. Hartz, A. Bravar, S. Dolan, T. Ishii, C. Densham, A. Cudd, Y. Yamada, H. Kubo, M. J. Wilking, P. Jonsson, S. B. Boyd, S. Roth, Keigo Nakamura, L. Labarga, K. Fusshoeller, K. Gameil, J. Morrison, W. C. Parker, A. Zykova, M. Pavin, S. J. Jenkins, Gareth J. Barker, D. G. Payne, A. Nakamura, Kate Scholberg, J. P. Coleman, F. Shaker, T. Tsukamoto, H. K. Tanaka, J. F. Martin, M. Tzanov, G. Zarnecki, A. Rychter, J. Kisiel, K. Matsushita, A. Hiramoto, A. K. Ichikawa, M. Buizza Avanzini, L. L. Kormos, T. Hasegawa, D. Cherdack, T. Campbell, S. Valder, K. Abe, Y. Kataoka, G. Pintaudi, C. McGrew, A. Gorin, L. Koch, C. Andreopoulos, T. Vladisavljevic, Thorsten Lux, T. Lindner, T. Kikawa, S. Suvorov, R. P. Litchfield, F. Bench, T. Kajita, M. Lawe, M. Kabirnezhad, A. T. Suzuki, Y. Nagai, C. K. Jung, Akitaka Ariga, T. Hayashino, R. Fukuda, E. Mazzucato, Y. Asada, Oleg Mineev, T. Nakadaira, Shigeki Aoki, M. Ziembicki, Yufeng Wang, M. Hogan, V. Matveev, T. Ishida, T. Odagawa, K. Mavrokoridis, A. Konaka, A. Bubak, H. A. Tanaka, K. Iwamoto, Jaroslaw Pasternak, Y. Awataguchi, Marco Laveder, Patrick Dunne, Jan T. Sobczyk, S. Manly, P. F. Denner, C. Francois, A. Minamino, M. Malek, Shuji Tanaka, Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE (UMR_7585)), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Laboratoire Leprince-Ringuet (LLR), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), T2K, Science and Technology Facilities Council (STFC), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Ministerio de Economía y Competitividad (España), Abe, K., Akutsu, R., Ali, A., Alt, C., Andreopoulos, C., Anthony, L., Antonova, M., Aoki, S., Ariga, A., Asada, Y., Ashida, Y., Atkin, E. T., Awataguchi, Y., Ban, S., Barbi, M., Barker, G. J., Barr, G., Barrow, D., Barry, C., Batkiewicz-Kwasniak, M., Beloshapkin, A., Bench, F., Berardi, V, Berkman, S., Berns, L., Bhadra, S., Bienstock, S., Blondel, A., Bolognesi, S., Bourguille, B., Boyd, S. B., Brailsford, D., Bravar, A., Bravo Berguno, D., Bronner, C., Bubak, A., Avanzini, M. Buizza, Calcutt, J., Campbell, T., Cao, S., Cartwright, S. L., Catanesi, M. G., Cervera, A., Chappell, A., Checchia, C., Cherdack, D., Chikuma, N., Christodoulou, G., Coleman, J., Collazuol, G., Cook, L., Coplowe, D., Cudd, A., Dabrowska, A., De Rosa, G., Dealtry, T., Denner, P. F., Dennis, S. R., Densham, C., Di Lodovico, F., Dokania, N., Dolan, S., Doyle, T. A., Drapier, O., Dumarchez, J., Dunne, P., Eklund, L., Emery-Schrenk, S., Ereditato, A., Fernandez, P., Feusels, T., Finch, A. J., Fiorentini, G. A., Fiorillo, G., Francois, C., Friend, M., Fujii, Y., Fujita, R., Fukuda, D., Fukuda, R., Fukuda, Y., Fusshoeller, K., Gameil, K., Giganti, C., Golan, T., Gonin, M., Gorin, A., Guigue, M., Hadley, D. R., Haigh, J. T., Hamacher-Baumann, P., Hartz, M., Hasegawa, T., Hastings, N. C., Hayashino, T., Hayato, Y., Hiramoto, A., Hogan, M., Holeczek, J., Van, N. T. Hong, Iacob, F., Ichikawa, A. K., Ikeda, M., Ishida, T., Ishii, T., Ishitsuka, M., Iwamoto, K., Izmaylov, A., Jakkapu, M., Jamieson, B., Jenkins, S. J., Jesus-Valls, C., Jiang, M., Johnson, S., Jonsson, P., Jung, C. K., Kabirnezhad, M., Kaboth, A. C., Kajita, T., Kakuno, H., Kameda, J., Karlen, D., Kasetti, S. P., Kataoka, Y., Katori, T., Kato, Y., Kearns, E., Khabibullin, M., Khotjantsev, A., Kikawa, T., Kim, H., Kim, J., King, S., Kisiel, J., Knight, A., Knox, A., Kobayashi, T., Koch, L., Koga, T., Konaka, A., Kormos, L. L., Koshio, Y., Kostin, A., Kowalik, K., Kubo, H., Kudenko, Y., Kukita, N., Kuribayashi, S., Kurjata, R., Kutter, T., Kuze, M., Labarga, L., Lagoda, J., Lamoureux, M., Laveder, M., Lawe, M., Licciardi, M., Lindner, T., Litcheld, R. P., Liu, S. L., Li, X., Longhin, A., Ludovici, L., Lu, X., Lux, T., Nascimento Machado, L., Magaletti, L., Mahn, K., Malek, M., Manly, S., Maret, L., Marino, A. D., Marti-Magro, L., Martin, J. F., Maruyama, T., Matsubara, T., Matsushita, K., Matveev, V, Mavrokoridis, K., Mazzucato, E., Mccarthy, M., Mccauley, N., Mcfarland, K. S., Mcgrew, C., Mefodiev, A., Metelko, C., Mezzetto, M., Minamino, A., Mineev, O., Mine, S., Miura, M., Bueno, L. Molina, Moriyama, S., Morrison, J., Mueller, Th A., Munteanu, L., Murphy, S., Nagai, Y., Nakadaira, T., Nakahata, M., Nakajima, Y., Nakamura, A., Nakamura, K. G., Nakamura, K., Nakayama, S., Nakaya, T., Nakayoshi, K., Nantais, C., Ngoc, T., V, Niewczas, K., Nishikawa, K., Nishimura, Y., Nonnenmacher, T. S., Nova, F., Novella, P., Nowak, J., Nugent, J. C., O'Keeffe, H. M., O'Sullivan, L., Odagawa, T., Okumura, K., Okusawa, T., Oser, S. M., Owen, R. A., Oyama, Y., Palladino, V, Palomino, J. L., Paolone, V, Parker, W. C., Pasternak, J., Paudyal, P., Pavin, M., Payne, D., Penn, G. C., Pickering, L., Pidcott, C., Pintaudi, G., Guerra, E. S. Pinzon, Pistillo, C., Popov, B., Porwit, K., Posiadala-Zezula, M., Pritchard, A., Quilain, B., Radermacher, T., Radicioni, E., Radics, B., Rato, P. N., Reinherz-Aronis, E., Riccio, C., Rondio, E., Roth, S., Rubbia, A., Ruggeri, A. C., Ruggles, C. A., Rychter, A., Sakashita, K., Sanchez, F., Schloesser, C. M., Scholberg, K., Schwehr, J., Scott, M., Seiya, Y., Sekiguchi, T., Sekiya, H., Sgalaberna, D., Shah, R., Shaikhiev, A., Shaker, F., Shaykina, A., Shiozawa, M., Shorrock, W., Shvartsman, A., Smirnov, A., Smy, M., Sobczyk, J. T., Sobel, H., Soler, F. J. P., Sonoda, Y., Steinmann, J., Suvorov, S., Suzuki, A., Suzuki, S. Y., Suzuki, Y., Sztuc, A. A., Tada, M., Tajima, M., Takeda, A., Takeuchi, Y., Tanaka, H. K., Tanaka, H. A., Tanaka, S., Thompson, L. F., Toki, W., Touramanis, C., Towstego, T., Tsui, K. M., Tsukamoto, T., Tzanov, M., Uchida, Y., Uno, W., Vagins, M., Valder, S., Vallari, Z., Vargas, D., Vasseur, G., Vilela, C., Vinning, W. G. S., Vladisavljevic, T., Volkov, V. V., Wachala, T., Walker, J., Walsh, J. G., Wang, Y., Wark, D., Wascko, M. O., Weber, A., Wendell, R., Wilking, M. J., Wilkinson, C., Wilson, J. R., Wilson, R. J., Wood, K., Wret, C., Yamada, Y., Yamamoto, K., Yanagisawa, C., Yang, G., Yano, T., Yasutome, K., Yen, S., Yershov, N., Yokoyama, M., Yoshida, T., Yu, M., Zalewska, A., Zalipska, J., Zaremba, K., Zarnecki, G., Ziembicki, M., Zimmerman, E. D., Zito, M., Zsoldos, S., and Zykova, A.

Subjects
muon antineutrino beam, General Physics and Astronomy, antineutrino/mu: secondary beam, KAMIOKANDE, antineutrino/e: particle identification, 01 natural sciences, 09 Engineering, High Energy Physics - Experiment, High Energy Physics - Experiment (hep-ex), secondary beam [neutrino/mu], [PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], neutrino/e: particle identification, QC, Physics, 02 Physical Sciences, J-PARC Lab, T2K experiment, electron antineutrino, T2K Collaboration, kinematics, Physical Sciences, Particle Physics - Experiment, T2K experiment in an accelerator-produced, General Physics, 530 Physics, Physics, Multidisciplinary, FOS: Physical sciences, particle identification [antineutrino/e], Neutrino beam, secondary beam [antineutrino/mu], Physics::Geophysics, Nuclear physics, 0103 physical sciences, mixing, ddc:530, 010306 general physics, 01 Mathematical Sciences, Muon, Science & Technology, particle identification [neutrino/e], hep-ex, background, neutrino/mu: secondary beam, antineutrino: oscillation, oscillation [antineutrino], Elementary Particles and Fields, High Energy Physics::Experiment, PMNS, Electron neutrino, Beam (structure), Free parameter, experimental results
Abstract

Electron antineutrino appearance is measured by the T2K experiment in an accelerator-produced antineutrino beam, using additional neutrino beam operation to constrain parameters of the Pontecorvo-Maki-Nakagawa-Sakata (PMNS) mixing matrix. T2K observes 15 candidate electron antineutrino events with a background expectation of 9.3 events. Including information from the kinematic distribution of observed events, the hypothesis of no electron antineutrino appearance is disfavored with a significance of 2.40 σ and no discrepancy between data and PMNS predictions is found. A complementary analysis that introduces an additional free parameter which allows non-PMNS values of electron neutrino and antineutrino appearance also finds no discrepancy between data and PMNS predictions., Physical Review Letters, 124 (16), ISSN:0031-9007, ISSN:1079-7114

Published
2019

15. Optical Properties of Bulk Gallium Oxide Grown from the Melt

Author

V. I. Nikolaev, K.D. Mynbaeva, Alexey E. Romanov, A.V. Kremleva, Alexander N. Smirnov, E. V. Ivanova, Harri Lipsanen, D.A. Bauman, Maxim A. Odnoblyudov, Marina G. Mynbaeva, P. S. Shirshnev, A.A. Lavrent’ev, Vladislav E. Bougrov, M.V. Zamoryanskaya, and Irina P. Nikitina

Subjects
010302 applied physics, Technology, Materials science, Chemical technology, TP1-1185, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Condensed Matter::Materials Science, Gallium oxide, Chemical engineering, 0103 physical sciences, General Materials Science, 0210 nano-technology
Abstract

Results of the studies of the properties of single-crystalline bulk β-Ga2O3 grown from the melt are presented. High chemical purity and phase uniformity of the grown material are demonstrated. Raman spectroscopy studies confirmed low energies of optical phonons in β-Ga2O3, which makes it a promising material for laser optics applications.

Published
2018

16. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Author

Yoann Robin, Maki Kushimoto, Alexander N. Smirnov, Demid A. Kirilenko, Stefan Ivanov, Hiroshi Amano, Markus Pristovsek, A. A. Toropov, V. Yu. Davydov, T. V. Shubina, Si-Young Bae, E. A. Evropeitsev, V. N. Jmerik, and Shugo Nitta

Subjects
Materials science, Photoluminescence, Science, 02 engineering and technology, Electroluminescence, Epitaxy, 01 natural sciences, Article, law.invention, law, 0103 physical sciences, Quantum well, 010302 applied physics, Multidisciplinary, business.industry, 021001 nanoscience & nanotechnology, Wavelength, Optoelectronics, Medicine, Nanorod, 0210 nano-technology, business, Current density, Light-emitting diode
Abstract

We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission of the LEDs covers nearly the whole visible region, including UV, blue, green, and orange ranges. The intensity of each emission is strongly dependent on the current density, however the LEDs demonstrate a rather low color saturation. Based on transmission electron microscopy data and comparing them with electroluminescence and photoluminescence spectra measured at different excitation powers and temperatures, we could identify the spatial origination of each of the emission bands. We show that their wavelengths and intensities are governed by different thicknesses of the QWs grown on different crystal facets of the NRs as well as corresponding polarization-induced electric fields. Also the InGaN incorporation strongly varies along the NRs, increasing at their tips and corners, which provides the red shift of emission. With increasing the current, the different QW regions are activated successively from the NR tips to the side-walls, resulting in different LED colors. Our findings can be used as a guideline to design effectively emitting multi-color NR-LEDs.

Published
2018

17. Lattice and magnetic dynamics in the polar, chiral, and incommensurate antiferromagnet Ni2InSbO6

Author

Roman V. Pisarev, V. Yu. Davydov, Taka-hisa Arima, Alexander N. Smirnov, Yusuke Araki, and M. A. Prosnikov

Subjects
Physics, Condensed matter physics, Magnetism, Phonon, Transition temperature, 02 engineering and technology, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, Lattice (order), 0103 physical sciences, Antiferromagnetism, 010306 general physics, 0210 nano-technology, Excitation
Abstract

Complex systems with coexisting polarity, chirality, and incommensurate magnetism are of great interest because they open new degrees of freedom in the interaction between crystal and magnetic subsystems and therefore they host a plethora of intriguing physical properties. Here we report the optical properties and lattice and spin dynamics of ${\mathrm{Ni}}_{2}{\mathrm{InSbO}}_{6}$ single crystals. This material was studied with the use of polarized optical microscopy and micro-Raman spectroscopy in the temperature range 10--300 K. ${\mathrm{Ni}}_{2}{\mathrm{InSbO}}_{6}$ crystallizes in a polar structure described by the noncentrosymmetric space group $R3$ and the two types of structural domains were visualized due to the natural optical activity of opposite chirality. Raman tensor elements of most $A$ and $E$ phonons along with their symmetry were determined. The manifestation of LO-TO splitting was observed for the $A$ modes. By tracking the temperature dependencies of phonon frequencies, the well pronounced spin-phonon interaction was observed for several modes below and above the N\'eel transition temperature ${T}_{N} =76\phantom{\rule{4pt}{0ex}}\mathrm{K}$. In the antiferromagnetic phase, a broad excitation centered at $247\phantom{\rule{0.16em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$, was detected and assigned to the two-magnon mode and this value was used for estimating exchange parameters through linear spin-wave theory calculations.

Published
2019

18. Search for heavy neutrinos with the T2K near detector ND280

Author

C. Bronner, James R. Wilson, A. Bravar, S. King, A. Minamino, S. Ban, Robert Wilson, K. Yasutome, K. Nakamura, H. Kubo, P. Novella, P. Jonsson, K. Kowalik, E. Rondio, N. Chikuma, N. McCauley, C. M. Nantais, M. M. Khabibullin, A. N. Khotjantsev, Y. Nakajima, P. P. Koller, Federico Sanchez, D. R. Hadley, Y. Yamada, D. G. Payne, T. Wachala, A. Nakamura, L. Labarga, D. Sgalaberna, S. B. Boyd, S. Suvorov, R. P. Litchfield, K. Porwit, L. Molina Bueno, T. Inoue, R. Shah, Shin Sasaki, Jung-Hyun Kim, S. R. Johnson, G. De Rosa, G. A. Fiorentini, G.D. Barr, M. McCarthy, M. Malek, E. Scantamburlo, C. Barry, B. Radics, Xianguo Lu, D. Shaw, R.P. Kurjata, R. M. Berner, P. Lasorak, Patrick Dunne, K. Zaremba, S. Yen, R. A. Owen, F. Hosomi, Vladimir Volkov, M. Batkiewicz-Kwasniak, J. Morrison, S. Nakayama, A. Blondel, B. Bourguille, André Rubbia, A. Mefodiev, Lester D.R. Thompson, M. Mezzetto, Leïla Haegel, C. Pistillo, A. Dabrowska, K. Niewczas, W. Toki, J. Holeczek, Yusuke Suda, A. K. Ichikawa, G. Zarnecki, L. Magaletti, M. Ikeda, K. Nakayoshi, M. Vagins, M. Barbi, Y. Seiya, T. Thakore, C. Wret, Kimihiro Okumura, J. Steinmann, M. Buizza Avanzini, S. Mine, W. Uno, F. Di Lodovico, S. Dolan, M. Tada, C. Densham, F. Bench, A. Cudd, C. Metelko, A. Knight, S. Bolognesi, A. Rychter, J. L. Palomino, S. Manly, P. F. Denner, Hyun-Chul Kim, Todd D. Stewart, M. J. Wilking, Yu. G. Kudenko, K. E. Duffy, N. C. Hastings, A. Izmaylov, S. V. Cao, H. M. O'Keeffe, M. Gonin, Y. Nishimura, Akitaka Ariga, K. M. Tsui, T. Kajita, M. Lawe, P. Martins, H.A. Tanaka, S. Murphy, Y. Sonoda, J. Zalipska, S. M. Oser, T. Maruyama, M. Licciardi, T. Feusels, F. Iacob, M. Ishitsuka, Y. Oyama, K. Gameil, T. Lou, L. Berns, Shigeki Aoki, M. G. Catanesi, C. Yanagisawa, Y. Kato, M. O. Wascko, E. Radicioni, E. Kearns, B. Quilain, Y. Azuma, Sy Suzuki, M. Kabirnezhad, J. A. Nowak, Laura Gutermuth Anthony, A. Chappell, V. Matveev, Alexander Finch, H. Sobel, T. S. Nonnenmacher, T. Matsubara, D. L. Wark, J. T. Haigh, C. Jesus, T. Okusawa, C. Wilkinson, M. Antonova, Ahmed Ali, A. T. Suzuki, Y. Nagai, M. Lamoureux, B. Rossi, M. B. Smy, S. Yamasu, B. Jamieson, A. Zalewska, T. Golan, T. Radermacher, M. Yu, S. Zsoldos, C. K. Jung, C. Touramanis, Jan T. Sobczyk, M. Jiang, Antonio Ereditato, A. Pritchard, V. Palladino, K. Iwamoto, Xiao-yan Li, T. Hayashino, N. Yershov, A. A. Sztuc, E. S. Pinzon Guerra, T. Sekiguchi, C. Riccio, S. Emery-Schrenk, T. Yano, Pablo Fernandez, R. Wendell, Marco Laveder, Kevin Scott McFarland, T. Dealtry, C. Francois, K. Mavrokoridis, A. D. Marino, D. Vargas, A. Konaka, J. Kameda, J. Dumarchez, J. Schwehr, A. Hiramoto, T. Nakadaira, C. Giganti, T. Hasegawa, Ryuji Tamura, T. Kobayashi, C. Vilela, M. Miura, R. Tacik, D. Fukuda, T. Campbell, Y. Fujii, Z. J. Liptak, P. Paudyal, M. Hogan, Y. Awataguchi, E. Mazzucato, F. Gizzarelli, J. P. Lopez, A. Takeda, A. C. Kaboth, T. Ishida, A. Zykova, Oleg Mineev, L. O'Sullivan, S. Berkman, S. L. Cartwright, M. Ziembicki, O. Drapier, R. A. Intonti, L. L. Kormos, Yufeng Wang, Y. Takeuchi, L. Maret, P. N. Ratoff, T. Kutter, Teppei Katori, Hiroyuki Sekiya, R. Fujita, Kendall Mahn, P. Hamacher-Baumann, N. Dokania, Alexander N. Smirnov, Th. A. Mueller, R. Akutsu, G. Fiorillo, L. Pickering, J. Lagoda, Yoshihiro Suzuki, A. Knox, Y. Hayato, L. Ludovici, Keigo Nakamura, T. Vladisavljevic, Thorsten Lux, T. Lindner, W. Oryszczak, D. Cherdack, K. Abe, C. McGrew, L. Koch, C. Andreopoulos, V. Paolone, Z. Vallari, W. Y. Ma, Gareth J. Barker, E. D. Zimmerman, J. P. Coleman, A. Cervera, K. Yamamoto, F. Shaker, K. Nishikawa, Vincenzo Berardi, Alan Cosimo Ruggeri, D. Coplowe, T. Ishii, S. Bienstock, Masashi Yokoyama, N. T. Hong Van, G. Vasseur, J. Walker, D. Karlen, Tsuyoshi Nakaya, Masato Shiozawa, S. Moriyama, S. Bhadra, M. Hartz, A. Shaikhiev, T. Koga, E. Reinherz-Aronis, P. Stowell, M. Zito, Hidekazu Kakuno, G. Yang, A. C. Weber, A. Longhin, M. Friend, A. Shaykina, M. Posiadala-Zezula, G. Collazuol, Mark Scott, M. Pavin, T. Yoshida, T. Tsukamoto, Y. Ashida, Y. Fukuda, G. Christodoulou, Y. Nakanishi, K. Sakashita, M. Kuze, B. A. Popov, S. Roth, Masayuki Nakahata, C. Pidcott, Y. Uchida, C. Checchia, W. C. Parker, Kate Scholberg, H. K. Tanaka, J. F. Martin, M. Tzanov, J. Kisiel, J. Calcutt, Yusuke Koshio, D. Brailsford, S. R. Dennis, C. M. Schloesser, UAM. Departamento de Física Teórica, Abe, K., Akutsu, R., Ali, A., Andreopoulos, C., Anthony, L., Antonova, M., Aoki, S., Ariga, A., Ashida, Y., Awataguchi, Y., Azuma, Y., Ban, S., Barbi, M., Barker, G. J., Barr, G., Barry, C., Batkiewicz-Kwasniak, M., Bench, F., Berardi, V., Berkman, S., Berner, R. M., Berns, L., Bhadra, S., Bienstock, S., Blondel, A., Bolognesi, S., Bourguille, B., Boyd, S. B., Brailsford, D., Bravar, A., Bronner, C., Buizza Avanzini, M., Calcutt, J., Campbell, T., Cao, S., Cartwright, S. L., Catanesi, M. G., Cervera, A., Chappell, A., Checchia, C., Cherdack, D., Chikuma, N., Christodoulou, G., Coleman, J., Collazuol, G., Coplowe, D., Cudd, A., Dabrowska, A., DE ROSA, Gianfranca, Dealtry, T., Denner, P. F., Dennis, S. R., Densham, C., Di Lodovico, F., Dokania, N., Dolan, S., Drapier, O., Duffy, K. E., Dumarchez, J., Dunne, P., Emery-Schrenk, S., Ereditato, A., Fernandez, P., Feusels, T., Finch, A. J., Fiorentini, G. A., Fiorillo, Giuliana, Francois, C., Friend, M., Fujii, Y., Fujita, R., Fukuda, D., Fukuda, Y., Gameil, K., Giganti, C., Gizzarelli, F., Golan, T., Gonin, M., Hadley, D. R., Haegel, L., Haigh, J. T., Hamacher-Baumann, P., Hartz, M., Hasegawa, T., Hastings, N. C., Hayashino, T., Hayato, Y., Hiramoto, A., Hogan, M., Holeczek, J., Hong Van, N. T., Hosomi, F., Iacob, F., Ichikawa, A. K., Ikeda, M., Inoue, T., Intonti, R. A., Ishida, T., Ishii, T., Ishitsuka, M., Iwamoto, K., Izmaylov, A., Jamieson, B., Jesus, C., Jiang, M., Johnson, S., Jonsson, P., Jung, C. K., Kabirnezhad, M., Kaboth, A. C., Kajita, T., Kakuno, H., Kameda, J., Karlen, D., Katori, T., Kato, Y., Kearns, E., Khabibullin, M., Khotjantsev, A., Kim, H., Kim, J., King, S., Kisiel, J., Knight, A., Knox, A., Kobayashi, T., Koch, L., Koga, T., Koller, P. P., Konaka, A., Kormos, L. L., Koshio, Y., Kowalik, K., Kubo, H., Kudenko, Y., Kurjata, R., Kutter, T., Kuze, M., Labarga, L., Lagoda, J., Lamoureux, M., Lasorak, P., Laveder, M., Lawe, M., Licciardi, M., Lindner, T., Liptak, Z. J., Litchfield, R. P., Li, X., Longhin, A., Lopez, J. P., Lou, T., Ludovici, L., Lu, X., Lux, T., Magaletti, L., Mahn, K., Malek, M., Manly, S., Maret, L., Marino, A. D., Martin, J. F., Martins, P., Maruyama, T., Matsubara, T., Matveev, V., Mavrokoridis, K., Ma, W. Y., Mazzucato, E., Mccarthy, M., Mccauley, N., Mcfarland, K. S., Mcgrew, C., Mefodiev, A., Metelko, C., Mezzetto, M., Minamino, A., Mineev, O., Mine, S., Miura, M., Molina Bueno, L., Moriyama, S., Morrison, J., Mueller, T. A., Murphy, S., Nagai, Y., Nakadaira, T., Nakahata, M., Nakajima, Y., Nakamura, A., Nakamura, K. G., Nakamura, K., Nakamura, K. D., Nakanishi, Y., Nakayama, S., Nakaya, T., Nakayoshi, K., Nantais, C., Niewczas, K., Nishikawa, K., Nishimura, Y., Nonnenmacher, T. S., Novella, P., Nowak, J., O'Keeffe, H. M., O'Sullivan, L., Okumura, K., Okusawa, T., Oryszczak, W., Oser, S. M., Owen, R. A., Oyama, Y., Palladino, Vittorio, Palomino, J. L., Paolone, V., Parker, W. C., Paudyal, P., Pavin, M., Payne, D., Pickering, L., Pidcott, C., Pinzon Guerra, E. S., Pistillo, C., Popov, B., Porwit, K., Posiadala-Zezula, M., Pritchard, A., Quilain, B., Radermacher, T., Radicioni, E., Radics, B., Ratoff, P. N., Reinherz-Aronis, E., Riccio, C., Rondio, E., Rossi, B., Roth, S., Rubbia, A., Ruggeri, ALAN COSIMO, Rychter, A., Sakashita, K., Sanchez, F., Sasaki, S., Scantamburlo, E., Schloesser, C. M., Scholberg, K., Schwehr, J., Scott, M., Seiya, Y., Sekiguchi, T., Sekiya, H., Sgalaberna, D., Shah, R., Shaikhiev, A., Shaker, F., Shaw, D., Shaykina, A., Shiozawa, M., Smirnov, A., Smy, M., Sobczyk, J. T., Sobel, H., Sonoda, Y., Steinmann, J., Stewart, T., Stowell, P., Suda, Y., Suvorov, S., Suzuki, A., Suzuki, S. Y., Suzuki, Y., Sztuc, A. A., Tacik, R., Tada, M., Takeda, A., Takeuchi, Y., Tamura, R., Tanaka, H. K., Tanaka, H. A., Thakore, T., Thompson, L. F., Toki, W., Touramanis, C., Tsui, K. M., Tsukamoto, T., Tzanov, M., Uchida, Y., Uno, W., Vagins, M., Vallari, Z., Vargas, D., Vasseur, G., Vilela, C., Vladisavljevic, T., Volkov, V. V., Wachala, T., Walker, J., Wang, Y., Wark, D., Wascko, M. O., Weber, A., Wendell, R., Wilking, M. J., Wilkinson, C., Wilson, J. R., Wilson, R. J., Wret, C., Yamada, Y., Yamamoto, K., Yamasu, S., Yanagisawa, C., Yang, G., Yano, T., Yasutome, K., Yen, S., Yershov, N., Yokoyama, M., Yoshida, T., Yu, M., Zalewska, A., Zalipska, J., Zaremba, K., Zarnecki, G., Ziembicki, M., Zimmerman, E. D., Zito, M., Zsoldos, S., Zykova, A., Science and Technology Facilities Council (STFC), Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE (UMR_7585)), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Laboratoire Leprince-Ringuet (LLR), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), T2K, Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Ministerio de Ciencia, Innovación y Universidades (España), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), and Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)

Subjects
decay modes [neutrino], GENERAL-THEORY, mixing [neutrino], Physics::Instrumentation and Detectors, neutrino: heavy: search for, KAMIOKANDE, 01 natural sciences, High Energy Physics - Experiment, Physics, Particles & Fields, High Energy Physics - Experiment (hep-ex), LIMITS, secondary beam [neutrino/mu], neutrino: decay modes, [PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], Particle Physics Experiments, neutrino: mass, media_common, Physics, VMSM, J-PARC Lab, statistical analysis: Bayesian, K: decay, heavy neutrinos, T2K Experiment, Time Projection Chambers, mass dependence, General theory, T2K Experiment, Time Projection Chambers, Physical Sciences, Christian ministry, data analysis method, FOS: Physical sciences, Library science, heavy: search for [neutrino], Astronomy & Astrophysics, Bayesian [statistical analysis], near detector, 0103 physical sciences, DARK-MATTER, media_common.cataloged_instance, ddc:530, Early career, European union, S077A00, 010306 general physics, S077A01, heavy neutrinos, Science & Technology, 010308 nuclear & particles physics, background, hep-ex, High Energy Physics::Phenomenology, Física, neutrino/mu: secondary beam, time projection chamber, decay [K], mass [neutrino], Hypothetical particle physics models Particle phenomena, High Energy Physics::Experiment, neutrino: mixing, statistical, experimental results
Abstract

This paper reports on the search for heavy neutrinos with masses in the range 140, Physical Review D, 100 (5), ISSN:1550-7998, ISSN:0556-2821, ISSN:1550-2368

Published
2019

20. Recognition of structural elements of mechanical engineering as a solution to data formalization problem

Author

I V Fokin, Alexander N. Smirnov, N V Podrez, and A. S. Govorkov

Subjects
Computer science, Mechanical engineering
Abstract

The paper discusses a typical example of recognizing a sheet metal part containing 2 structural elements. According to the developed recognition algorithm, a software module was implemented for automated recognition of structural elements in a 3-dimensional model of parts with the * .stp extension, which allowed working not only with models made in the Siemens NX system, but also, in general, with almost any 3D models exported in this format. The result of recognition can be used to develop systems that design technological processes for the production of mechanical engineering products, including at aircraft production enterprises.

Published
2021

21. Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Author

Nikita A. Pikhtin, V. V. Shamakhov, Peter Kop`ev, I. A. Eliseyev, E. V. Fomin, Alexander N. Smirnov, Sergey O. Slipchenko, and D. N. Nikolaev

Subjects
InGaAs, Materials science, Photoluminescence, General Chemical Engineering, semiconductors, Chemical vapor deposition, selective area growth, Epitaxy, 01 natural sciences, Article, lcsh:Chemistry, 010309 optics, Condensed Matter::Materials Science, Selective area epitaxy, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, Quantum well, 010302 applied physics, atomic force microscopy, Condensed Matter::Other, selective area epitaxy, business.industry, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, quantum wells, Semiconductor, lcsh:QD1-999, MOCVD, Optoelectronics, photoluminescence, business
Abstract

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-&mu, m-wide SiO2 mask/100-&mu, m-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

Published
2020

22. Raman spectra of folded acoustic phonons in short-period GaN/AlN superlattices as a tool for structure characterization

Author

I. A. Eliseyev, V. Yu. Davydov, Dmitrii V. Nechaev, V. N. Jmerik, Evgenii M. Roginskii, M. B. Smirnov, Alexander N. Smirnov, and Yu. E. Kitaev

Subjects
History, symbols.namesake, Materials science, Condensed matter physics, Period (periodic table), Superlattice, symbols, Acoustic Phonons, Raman spectroscopy, Computer Science Applications, Education, Characterization (materials science)
Abstract

The results of experimental and theoretical studies of phonon modes in short-period GaN/AlN superlattices grown by PA MBE on the (0001) Al2O3 substrate are reported. In the framework of Density Functional Theory and Elastic Continuum Model the lattice dynamics properties are studied of (GaN)m(AlN)n SLs (m+n≤24), where n and m are the number of monolayers. Good agreement between experiment and theory is found, which made it possible to establish unambiguously a relationship between the features observed in the Raman spectra and the microscopic nature of the acoustic phonon modes. The obtained results open new possibilities for analyzing the structural properties of GaN/AlN SLs by Raman spectroscopy.

Published
2020

23. Raman scattering and low-frequency noise in epitaxial graphene chips

Author

Alexander N. Smirnov, Alexander Usikov, P. A. Dement’ev, I. A. Eliseyev, Alexandr Dmitrievich Roenkov, A. A. Lebedev, Sergey P. Lebedev, E.I. Shabunina, Yu N. Makarov, M V Puzyk, N. M. Shmidt, and A. V. Zubov

Subjects
History, symbols.namesake, Materials science, business.industry, Infrasound, symbols, Optoelectronics, Epitaxial graphene, business, Raman scattering, Computer Science Applications, Education
Abstract

Graphene is considered as a promising candidate for manufacturing of sensors due to its extreme sensitivity to molecule absorption. In this work, we show the connection between the electrical and optical properties of epitaxial graphene chips grown on 4H-SiC and intended for the production of protein-based sensors. Using of a complex of techniques, including Raman spectroscopy, atomic force microscopy, Kelvin probe microscopy, study of I-V characteristics and low-frequency noise, it is shown that the character of frequency dependence of the spectral density of voltage fluctuations and its value at a frequency of 1 Hz can be used for classification and selection of graphene chips for their application as sensors. Classification of the graphene chips will allow more efficient development of graphene-based biosensors.

Published
2020

24. Emission properties of textured gallium nitride with high density of stacking faults

Author

E. V. Ivanova, Alexander N. Smirnov, K. D. Mynbaev, Marina G. Mynbaeva, and Demid A. Kirilenko

Subjects
History, chemistry.chemical_compound, Materials science, chemistry, business.industry, Stacking, Optoelectronics, High density, Gallium nitride, business, Computer Science Applications, Education
Abstract

In this study we related structural properties of GaN grown on ceramic substrate and studied with transmission electron microscopy with the results of photo-and cathodoluminescence investigations. We found that stacking faults in the basal plane were responsible for both strong room temperature visible emission and exciton-related ultraviolet luminescence at cryogenic temperature.

Published
2020

25. Proton irradiation effects on GaN-based epitaxial structures

Author

I. A. Eliseyev, A. E. Nikolaev, Alexander N. Smirnov, A. A. Lebedev, A. V. Zubov, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, W. V. Lundin, V. Yu. Davydov, Vitalii V. Kozlovski, D. A. Zakheim, and K. S. Davydovskaya

Subjects
History, Materials science, Proton, Irradiation, Photochemistry, Epitaxy, Computer Science Applications, Education
Abstract

Radiation hardness of different types of GaN based epitaxial structures which can be used as elements of electronic devices is studied by Hall effect,CV and IV measurements, as well as photoluminescence and Raman scattering. It is shown that proton irradiation leads to formation of deep acceptor states reducing conductivity of high electron mobility transistors (HEMTs) and Si-doped layers and is accompanied by a redistribution of the defect-related lines in the photoluminescence spectra. Our results demonstrate that proton irradiation increases conductivity for GaN:C, while decreases it for GaN:Fe and GaN:(Fe+C) layers.

Published
2020

27. Photodegradation of surface passivated GaAs nanowires

Author

Prokhor A. Alekseev, V. L. Berkovits, Alexander N. Smirnov, Harri Lipsanen, V. Yu. Davydov, Mikhail S. Dunaevskiy, and Tuomas Haggren

Subjects
History, Materials science, Photoluminescence, Passivation, business.industry, Nanowire, Nitride, Orders of magnitude (numbers), Computer Science Applications, Education, Optoelectronics, Laser power scaling, business, Photodegradation, Intensity (heat transfer)
Abstract

Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.

Published
2020

28. ANALYSIS OF FMRI AND EEG MARKERS OF MOTOR ACTIVITY IN PATIENTS WITH SEVERE TRAUMATIC BRAIN INJURY

Author

Yuliya Kotovich, I. N. Pronin, Elena V. Sharova, Alexander N. Smirnov, Michael Kulikov, Eugene Alexandrova, Marina Chelyapina, Lyudmila Zhavoronkova, Tatyana Mukhina, Anna Silchenko, G. N. Boldyreva, and Dmitriy Lysachev

Subjects
medicine.medical_specialty, Physical medicine and rehabilitation, medicine.diagnostic_test, business.industry, Traumatic brain injury, medicine, In patient, Motor activity, Electroencephalography, business, medicine.disease
Published
2018

30. Graphene on silicon carbide as a basis for gas- and biosensor applications

Author

S. N. Novikov, V. Yu. Davydov, O. Yu. Vilkov, Alexander N. Smirnov, Sergey P. Lebedev, Yu.N. Makarov, I. A. Eliseyev, V. S. Levitskii, D. Yu. Usachov, E.V. Guschina, Artem G. Rybkin, M.S. Dunaevsckiy, A. A. Lebedev, Ioffe Institute, St. Petersburg State University, Department of Micro and Nanosciences, Nitride Crystals Inc., Department of Electronics and Nanoengineering, Aalto-yliopisto, and Aalto University

Subjects
Materials science, Physics and Astronomy (miscellaneous), Materials Science (miscellaneous), Angle-resolved photoemission spectroscopy, Nanotechnology, law.invention, chemistry.chemical_compound, symbols.namesake, Mathematics (miscellaneous), X-ray photoelectron spectroscopy, law, silicon carbide, Silicon carbide, XPS, thermal decomposition, Basis (linear algebra), Graphene, Thermal decomposition, graphene, Condensed Matter Physics, ARPES, chemistry, Raman spectroscopy, symbols, AFM, Biosensor
Abstract

The structural, chemical, and electronic characteristics of graphene grown by thermal decomposition of a singlecrystal SiC substrate in Ar atmosphere are presented. It is shown that this technology allows the creation of high-quality monolayer graphene films with a small fraction of bilayer graphene inclusions. The performance of graphene on SiC as a gas sensor or a biosensor was tested. The sensitivity of gas sensors to NO2 on the order of 1 ppb and that of biosensors to fluorescein with concentration on the order of 1 ng/mL and to bovine serum albumin-fluorescein conjugate with concentration on the order of 1 ng/mL were determined.

Published
2018

31. One-pot synthesis of benzoxazoles via the metal-free ortho-C–H functionalization of phenols with nitroalkanes

Author

O. N. Nadein, Michael Rubin, Dmitrii A. Aksenov, Nicolai A. Aksenov, Alexander N. Smirnov, and Alexander V. Aksenov

Subjects
chemistry.chemical_compound, chemistry, Metal free, General Chemical Engineering, Intramolecular force, One-pot synthesis, Surface modification, Organic chemistry, General Chemistry, Phenols
Abstract

PPA-activated nitroalkanes are employed in the design of a one-pot cascade transformation involving metal-free and oxidant-free direct ortho-C–H functionalization, followed by Beckman rearrangement and intramolecular cyclocondensation to produce benzoxazoles and benzobisoxazoles directly from easily available phenols.

Published
2015

32. Metal-free ring expansion of indoles with nitroalkenes: a simple, modular approach to 3-substituted 2-quinolones

Author

Alexander N. Smirnov, Nicolai A. Aksenov, Inna V. Aksenova, Jonathon P. Matheny, Michael Rubin, and Alexander V. Aksenov

Subjects
chemistry.chemical_compound, Nucleophile, Metal free, Chemistry, General Chemical Engineering, Indole synthesis, Organic chemistry, General Chemistry, Alkylation, Ring (chemistry), Combinatorial chemistry, Acetophenone
Abstract

3-Substituted 2-quinolones are obtained via a novel metal-free transannulation reaction of 2-nitroolefins with 2-substituted indoles in polyphosphoric acid. This acid-mediated cascade transformation operates via the ANRORC (Addition of Nucleophile, Ring Opening, and Ring Closure) mechanism and can be used in combination with the Fisher indole synthesis to offer a practical three-component hetero-annulation approach to 2-quinolones from arylhydrazines, 2-nitroalkenes, and acetophenone. An alternative entry to this chemistry employing the alkylation of electron-rich arenes and hetarenes with 1-(2-indolyl)-2-nitroalkene has also been demonstrated.

Published
2015

33. Lattice dynamics and electronic transitions in a structurally complex layered copper borate Cu3(BO3)2

Author

M. N. Popova, Alexander N. Smirnov, Roman V. Pisarev, A. D. Molchanova, R. M. Dubrovin, M. A. Prosnikov, V. Yu. Davydov, and Kirill N. Boldyrev

Subjects
Physics, Superstructure, Phonon, 02 engineering and technology, Crystal structure, Electronic structure, Type (model theory), Weak interaction, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, Crystallography, Absorption band, 0103 physical sciences, 010306 general physics, 0210 nano-technology
Abstract

Copper borate ${\mathrm{Cu}}_{3}{({\mathrm{BO}}_{3})}_{2}$ is a complex compound with a layered crystallographic structure in which the Jahn-Teller active and magnetic copper ${\mathrm{Cu}}^{2+}$ ions occupy 16 nonequivalent positions in the unit cell displaying controversial magnetic behavior. In this paper, we report on the infrared and Raman spectroscopic studies of the lattice dynamics and the electronic structure of $3{d}^{9}$ copper states below the fundamental absorption band. The lattice dynamics is characterized by a large number of phonons due to a low $P\overline{1}$ space-group symmetry and a large unit cell with $Z=10$. An unusually rich set of phonons was found in the low-energy part of the infrared and Raman spectra below 100 ${\mathrm{cm}}^{\ensuremath{-}1}$, which we tentatively assign to interlayer vibrations activated by a crystal superstructure and/or to weak force constants for modes related to some structural groups. Several phonons show anomalous behavior in the vicinity of the magnetic phase transition at ${T}_{N}=10\phantom{\rule{0.28em}{0ex}}\mathrm{K}$, thus evidencing magnetoelastic interaction. No new phonons were found below ${T}_{N}$, which excludes the spin-Peierls type of the magnetic transition. In the region of electronic transitions, a strong broad absorption band centered at $\ensuremath{\sim}1.8\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$ is observed, which we assign to overlapping of transitions between the $3{d}^{9}$ states of ${\mathrm{Cu}}^{2+}$ ions split by the crystal field in nonequivalent positions. The fundamental charge-transfer absorption band edge has a complex structure and is positioned around $\ensuremath{\sim}2.8\ensuremath{-}3.0$ eV.

Published
2017

34. Lattice and spin dynamics in a low-symmetry antiferromagnet NiWO4

Author

M. P. Volkov, Ladislav Bohatý, M. A. Prosnikov, Alexander N. Smirnov, Petra Becker, Roman V. Pisarev, and V. Yu. Davydov

Subjects
Physics, Condensed Matter - Materials Science, Magnetic structure, Condensed matter physics, Phonon, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Space group, 02 engineering and technology, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, Lattice (order), 0103 physical sciences, Antiferromagnetism, 010306 general physics, 0210 nano-technology, Anisotropy
Abstract

Lattice and magnetic dynamics of NiWO$_4$ single crystals were studied with the use of polarized Raman spectroscopy in a wide temperature range of 10-300 K including the antiferromagnetic ordering temperature $T_N$=62 K. Static magnetic measurements were used for characterizing the single crystals. All Raman-active phonons predicted by the group theory were observed and characterized. Magnetic symmetry analysis was used to determine possible magnetic space groups for NiWO$_4$ which can be also applied to any other isostructural crystal with the same magnetic propagation vector k=(1/2,0,0). Though the magnetic structure of NiWO$_4$ is relatively simple, a rich set of narrow and broad magnetic excitations with different polarization properties and temperature behavior in the very broad frequency range of 10-200 cm$^{-1}$ was observed, with some modes surviving at temperatures much higher than $T_N$ up to 220 K. Part of the magnetic excitations was identified as acoustic and optical spin-wave branches which allow us to construct exchange structure and estimate exchange and anisotropy constants with the use of linear spin-wave theory. Since the magnetic structure can be described as exchange-coupled AFM chains of $S=1$ ions, previously unobserved magnetic excitation at 24 cm$^{-1}$ is tentatively assigned to a Haldane gap mode.

Published
2017

35. Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

Author

V. Yu. Davydov, Andrey Bogdanov, S. Rouvimov, M. M. Kulagina, Daniele Barettin, S. T. Moroni, J. L. Merz, Emanuele Pelucchi, A. Gocalinska, Alexander Mintairov, A. S. Vlasov, S. I. Troshkov, D. V. Lebedev, Alexander N. Smirnov, J. Kapaldo, and Gediminas Juska

Subjects
III-V semiconductors, Materials science, Photoluminescence, Physics and Astronomy (miscellaneous), Exciton, Spontaneous emission, FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, Emission, Microcavity lasers, Indium compounds, 0103 physical sciences, Microdisc lasers, Semiconductor quantum dots, 010306 general physics, Electronic band structure, Aluminium compounds, Whispering-gallery modes, business.industry, Lasers, Q-factor, Whispering gallery mode, 021001 nanoscience & nanotechnology, Boxes, Quantum dot, Transmission electron microscopy, Optoelectronics, Excitons, Whispering-gallery wave, Microcavity, Quantum dot lasers, 0210 nano-technology, business, Lasing threshold, Physics - Optics, Optics (physics.optics)
Abstract

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of similar to 2 nm, the lateral size of 20-50 nm, and the density of similar to 5-10(9) cm(-2). Their emission observed at similar to 940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of similar to 3.2 lm and providing a free spectral range of similar to 27 nm and quality factors up to Q similar to 13 000. Threshold of similar to 50 W/cm(2Y) and spontaneous emission coupling coefficient of similar to 0.2 were measured for this MD-QD system. Published by AIP Publishing.

Published
2017
Full Text
View/download PDF

36. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

Author

Alexander N. Smirnov, V. V. Kudryavtsev, V.M. Svetlychnyi, S. I. Goloudina, Iosif V. Gofman, V. M. Pasyuta, Victor V. Luchinin, Demid A. Kirilenko, V. P. Sklizkova, M. F. Panov, and T. F. Semenova

Subjects
Materials science, Annealing (metallurgy), Scanning electron microscope, Analytical chemistry, Langmuir–Blodgett film, Crystallography, symbols.namesake, Electron diffraction, lcsh:TA1-2040, symbols, High-resolution transmission electron microscopy, Raman spectroscopy, lcsh:Engineering (General). Civil engineering (General), Single crystal, Polyimide
Abstract

High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm.

Published
2017

37. Unified mechanism of the surface Fermi level pinning in III-As nanowires

Author

Valery Yu. Davydov, Mikhail S. Dunaevskiy, Prokhor A. Alekseev, Demid A. Kirilenko, Alexander N. Smirnov, G. E. Cirlin, Rodion R. Reznik, and V. L. Berkovits

Subjects
Photoluminescence, Materials science, Nanowire, FOS: Physical sciences, Bioengineering, 02 engineering and technology, 01 natural sciences, Crystal, symbols.namesake, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Materials Science, Electrical and Electronic Engineering, 010302 applied physics, Kelvin probe force microscope, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Mechanical Engineering, Fermi level, General Chemistry, 021001 nanoscience & nanotechnology, Amorphous solid, Mechanics of Materials, symbols, Vacuum level, 0210 nano-technology, Raman scattering
Abstract

Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al$_{x}$Ga$_{1-x}$As and Ga$_{x}$In$_{1-x}$As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires., Comment: 7 pages, 3 figures

Published
2017
Full Text
View/download PDF

38. Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC

Author

Alexander N. Smirnov, V. Yu. Davydov, Mikhail Nestoklon, D. Yu. Usachov, Sergey P. Lebedev, Kirill A. Bokai, I. A. Eliseyev, A. A. Lebedev, and P. A. Dementev

Subjects
History, Materials science, Chemical substance, Strain (chemistry), Analytical chemistry, Monolayer graphene, Computer Science Applications, Education, law.invention, symbols.namesake, Magazine, law, symbols, Raman spectroscopy, Science, technology and society
Abstract

Comprehensive study of high-quality monolayer graphene samples grown by thermal destruction of the Si-face of the 4H-SiC substrate was carried out. Analysis of the data obtained by Raman spectroscopy and angle-resolved photoemission spectroscopy suggest the need to use the Fermi velocity in the graphene layer under study to obtain a correct estimate of the electron concentration and strain values using Raman data. This statement is valid not only for graphene on the SiC substrate, but for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.

Published
2019

39. Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period

Author

I. A. Eliseyev, E. E. Zavarin, Alexander N. Smirnov, S I Rodin, W. V. Lundin, M. B. Smirnov, Dmitrii Pankin, and V Yu Davydov

Subjects
History, Materials science, Phonon, Superlattice, Acoustic Phonons, Dielectric, Epitaxy, Molecular physics, Computer Science Applications, Education, symbols.namesake, Long period, symbols, Raman spectroscopy
Abstract

AlN/GaN superlattices (SL) grown by metalorganic vapor-phase epitaxy with the period of SLs varied from 20 nm to 140 nm, and the thickness of the structures ranged from 0.7 to 1 µm were studied by polarized Raman spectroscopy technique. The peaks within a complex spectral feature of the symmetry A1(TO) observed at about 580 cm−1, were assigned to the interface and quasi-confined phonons. Frequency splitting between the peaks was found monotonously increasing along with the SL period. This dependence was explained using the dielectric continuum model. A method based on this finding was proposed for estimating the period SL using Raman spectroscopy. This method extends the traditional approach based on the studies of folded acoustic phonons in the short-period SLs.

Published
2019

40. Raman spectra of GaSe epitaxial layers grown on GaAs substrates and group-theoretical analysis of their vibrational modes

Author

A. N. Starukhin, Alexander N. Smirnov, I. A. Eliseyev, P. S. Avdienko, Irina V. Sedova, Sergey V. Sorokin, V. Yu. Davydov, and Yu. E. Kitaev

Subjects
Condensed Matter::Quantum Gases, Condensed Matter::Materials Science, History, symbols.namesake, Materials science, Group (periodic table), Molecular vibration, symbols, Epitaxy, Raman spectroscopy, Molecular physics, Computer Science Applications, Education
Abstract

A complete group-theoretical analysis of vibrational modes in ε, β, γ-GaSe polytypes has been performed. Raman spectroscopy data obtained on single crystals of ε-GaSe with a subsequent group-theoretical analysis were used to analyze the Raman spectra low-dimensional GaSe structures. Information was obtained on the structural properties of epitaxial layers and arrays of nanorods of the ε-polytype GaSe grown by molecular beam epitaxy on GaAs (001) substrates.

Published
2019

41. Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis

Author

I. A. Eliseyev, E. E. Zavarin, W. V. Lundin, Alexander N. Smirnov, V. Yu. Davydov, V. N. Jmerik, Dmitrii V. Nechaev, Evgenii M. Roginskii, and Yu. E. Kitaev

Subjects
History, Materials science, Period (periodic table), Condensed matter physics, Ab initio quantum chemistry methods, Group (periodic table), Phonon, Superlattice, Computer Science Applications, Education
Abstract

The results of experimental and theoretical studies of phonon modes in short-period (GaN) m (AlN) n superlattices (SLs) grown by MOVPE and PA MBE on the (0001) Al2O3 substrate are reported. Using a comprehensive group-theoretical analysis, the genesis of the SL vibrational modes from the modes of bulk AlN and GaN crystals has been established, which is important for interpreting the SL Raman spectrum. In the framework of Density Functional Theory, the lattice dynamics and the structural properties of (GaN) m (AlN) n SLs (m+n⩽12) were studied. An analysis of the eigenvectors of the phonon modes made it possible to reveal their microscopic nature. We established that the E(TO) modes are localized in the layers constituting the SL. It is shown that the localized nature of this mode is kept even in the SLs with the thinnest layers (m+n=4). In turn, the A 1(TO) mode demonstrates a delocalized nature and reflects the averaged characteristics of the SL as a whole. A combined analysis of the ab initio calculations and Raman data was performed. Thus, the above studies open new possibilities for analyzing the structural properties of GaN/AlN SLs by Raman and IR spectroscopy.

Published
2019

42. Determination of external power factors influencing un-manned aerial vehicle of 'flying wing' type

Author

A. S. Govorkov, I. V. Fokin, and Alexander N. Smirnov

Subjects
History, Engineering, Wing, business.industry, business, Computer Science Applications, Education, Marine engineering, Power (physics)
Abstract

This article touches upon the issue of determination of external force factors influencing an unmanned aerial vehicle or drone in critical flight modes for further transition to the full-scale engineering development. A brief review of the design of the developing vehicle is given. A simplified three-dimensional model is created. On the basis of the 3d model and with the help of the FloEFD computer complex, the aerodynamic analysis of the chosen design of the developed unmanned aerial vehicle is carried out. The dependences of the available speed and disposable tangential overloads of flight acceleration are obtained. The minimum permissible horizontal flight acceleration is calculated. The aerodynamic coefficients of the used wing profile are given. The value of the available tangential overload for different flight speeds is defined. The relation of the maximum trajectory angle of inclination against the flight speed when flying above the ground is calculated. The minimum allowable catapulted take-off speed is calculated. This speed allows determining an allowable trajectory angle of the incline for the rectilinear altitude gain. The pressure distribution over the outer surface of the fuselage and the wing consoles of an unmanned aerial vehicle is obtained. The value of the acting axial force is calculated for take-off modes with different angles of inclination of the trajectory and for a horizontal straight-line flight at a constant speed.

Published
2019

43. Investigation of Statistical Broadening in InGaN Alloys

Author

A. V. Sakharov, D. S. Arteev, E. E. Zavarin, A. F. Tsatsul’nikov, M. A. Yagovkina, S. O. Usov, W. V. Lundin, V. Yu. Davydov, and Alexander N. Smirnov

Subjects
Diffraction, History, Photoluminescence, Materials science, Condensed Matter::Other, Band gap, Physics::Optics, Molecular physics, Spectral line, Computer Science Applications, Education, Condensed Matter::Materials Science, Full width at half maximum, symbols.namesake, Laser linewidth, symbols, Metalorganic vapour phase epitaxy, Raman spectroscopy
Abstract

Optical and structural properties of thick InGaN layers grown by MOCVD and MBE were studied by photoluminescence, optical transmission and Raman spectroscopies and X-ray diffraction analysis. Optical bandgap, Urbach energy, and full widths at half maximum (FWHM) of photoluminescence and Raman spectra depending on the InGaN alloy composition were determined experimentally. Minimal theoretical linewidth of photoluminescence spectra resulted from random distribution of In and Ga atoms in cation sublattice was calculated.

Published
2018

44. Photorefractive properties of lithium niobate single crystals doped with copper

Author

M. N. Palatnikov, A. A. Gabain, N. V. Sidorov, Alexander N. Smirnov, and A. A. Yanichev

Subjects
Materials science, Doping, Inorganic chemistry, Lithium niobate, Analytical chemistry, chemistry.chemical_element, Photorefractive effect, Condensed Matter Physics, Copper, law.invention, Ion, symbols.namesake, chemistry.chemical_compound, chemistry, law, symbols, Electron paramagnetic resonance, Spectroscopy, Raman scattering, Stoichiometry
Abstract

Raman scattering with excitation in the ultraviolet, visible, and near infrared and electron paramagnetic resonance are used to study the photorefractive properties of nominally pure, stoichiometric (R = Li/Nb = 1) single crystals of lithium niobate grown from a melt with 58.6 mol% Li2O (LiNbO3stoich), nominally pure crystals with a congruent composition (LiNbO3congr, R = 0.946), and Cu-doped crystals with a congruent composition (LiNbO3:Cu, [Cu] = 0.015 mass%). Optical irradiation is found to cause charge exchange of copper cations, Ca2+ → Cu, in the LiNbO3:Cu ([Cu] = 0.015 mass%) crystals. Thus, crystalline LiNbO3:Cu ([Cu] = 0.015 mass%) manifests photorefractive properties as a result of charge exchange of copper ions during laser irradiation, in addition to the contribution from intrinsic defects with localized electrons previously observed in LiNbO3stoich and LiNbO3congr.

Published
2013

45. Lattice dynamics and a magnetic-structural phase transition in the nickel orthoborateNi3(BO3)2

Author

Alexander N. Smirnov, A. D. Molchanova, V. Yu. Davydov, Kirill N. Boldyrev, Roman V. Pisarev, M. A. Prosnikov, V. Yu. Kazimirov, M. B. Smirnov, Marina N. Popova, and Evgenii M. Roginskii

Subjects
Physics, Phase transition, Condensed matter physics, Phonon, Center (category theory), 02 engineering and technology, Type (model theory), 021001 nanoscience & nanotechnology, 01 natural sciences, Brillouin zone, Condensed Matter::Materials Science, 0103 physical sciences, Antiferromagnetism, Condensed Matter::Strongly Correlated Electrons, Orthorhombic crystal system, 010306 general physics, 0210 nano-technology, Néel temperature
Abstract

Nickel orthoborate $\mathrm{N}{\mathrm{i}}_{3}{(\mathrm{B}{\mathrm{O}}_{3})}_{2}$ having a complex orthorhombic structure Pnnm (No. 58, $Z=2$) of the kotoite type is known for quite a long time as an antiferromagnetic material below ${T}_{\mathrm{N}}=46\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, but up to now its physical properties including the lattice dynamics have not been explored. Six $[\mathrm{Ni}{\mathrm{O}}_{6}]$ units of $2a$ and $4f$ types are linked via rigid $[\mathrm{B}{\mathrm{O}}_{3}]$ groups and these structural particularities impose restrictions on the lattice dynamics and spin-phonon interactions. We performed the symmetry analysis of the phonon modes at the center of the Brillouin zone. The structural parameters and phonon modes were calculated using the dmol3 program. We report and analyze results of infrared and Raman studies of phonon spectra measured in all required polarizations. Most of the even and odd phonons predicted on the basis of the symmetry analysis and theoretical calculations were reliably identified in the measured spectra. Clear evidence of the spin-phonon interaction was found for some particular phonons below ${T}_{\mathrm{N}}$. An unexpected emergence of several very narrow and weak phonon lines was observed in the infrared absorption spectra exactly at the magnetic ordering temperature ${T}_{\mathrm{N}}$. Moreover, anomalous behavior was found for some Raman phonons. The emergence of new phonon modes in the infrared and Raman spectra exactly at ${T}_{\mathrm{N}}$ proves the existence of a magnetostructural phase transition of a new type in $\mathrm{N}{\mathrm{i}}_{3}{(\mathrm{B}{\mathrm{O}}_{3})}_{2}$. A possible nature of this transition is discussed.

Published
2016

46. Optical and electrical properties of the MoSe2/graphene heterostructures

Author

Prokhor A. Alekseev, V. Yu. Davydov, F. A. Benimetskiy, Alexander N. Smirnov, Mikhail S. Dunaevskiy, Alexander A. Lebedev, S. P. Lebedev, and B R Borodin

Subjects
010302 applied physics, Kelvin probe force microscope, History, Photoluminescence, Materials science, business.industry, Graphene, Schottky barrier, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Computer Science Applications, Education, law.invention, Scanning probe microscopy, law, 0103 physical sciences, Monolayer, Optoelectronics, Work function, 0210 nano-technology, business, Bilayer graphene
Abstract

Optical and electrical properties of MoSe2 monolayer transferred to graphene/SiC substrate are studied by scanning probe microscopy and photoluminescence spectroscopy. By Kelvin probe microscopy it was measured a work function of the MoSe2 monolayer (4.3 eV) and it was revealed the n-type of doping. With the increasing of MoSe2 layers quantity the work function also increases which leads to the reducing of the Schottky barrier height between the SPM probe and the layers. Monolayer graphene quenches photoluminescence of the MoSe2 monolayer while the bilayer graphene does not perturb the photoluminescence.

Published
2018

47. A fully-active fine-grained detector with three readout views

Author

Philippe Mermod, A. Kostin, N. Yershov, Sergei Fedotov, Etam Noah, A. N. Khotjantsev, M. M. Khabibullin, A. Mefodiev, A. Longhin, Oleg Mineev, D. Sgalaberna, Franck Cadoux, A. Korzenev, Yu. G. Kudenko, Alexander N. Smirnov, and A. Blondel

Subjects
Physics, Physics - Instrumentation and Detectors, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, business.industry, Detector, FOS: Physical sciences, Instrumentation and Detectors (physics.ins-det), Scintillator, 01 natural sciences, Particle detector, Optics, Neutrino detector, 0103 physical sciences, Scintillation counter, Measuring instrument, Granularity, 010306 general physics, business, Instrumentation, Mathematical Physics, Energy (signal processing)
Abstract

This paper describes a novel idea of a fine-grained fully-active plastic scintillator detector made of many optically independent $1\times1\times1~\text{cm}^3$ cubes with readout on three orthogonal projections by wavelength shifting fibers. The original purpose of this detector is to serve as an active neutrino target for the detection, measurement and identification of the final state particles down to a few tenths MeV kinetic energies. The three readout views as well as the fine granularity ensure powerful localization and measurement of the deposited energy combined with good timing properties and isotropic acceptance. The possible application as a new active target for the T2K near detector, initial simulation studies and R&D test results are reported., 9 pages, 10 figures

Published
2018

48. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

Author

Dmitry Yu. Usachov, S. N. Novikov, Artem G. Rybkin, Yu N. Makarov, Prokhor A. Alekseev, Sergey P. Lebedev, Alexander N. Smirnov, A. A. Lebedev, I. A. Eliseyev, Valeri Davydov, V. S. Levitskii, and Mikhail S. Dunaevskiy

Subjects
010302 applied physics, History, Materials science, Silicon, Graphene, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Semimetal, Computer Science Applications, Education, law.invention, Carbide, symbols.namesake, X-ray photoelectron spectroscopy, chemistry, law, 0103 physical sciences, symbols, Thin film, 0210 nano-technology, Raman spectroscopy
Published
2018

49. Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on mu-cone patterned sapphire substrates by plasma-assisted MBE

Author

V. N. Jmerik, V. Yu. Davydov, G. Posina, Demid A. Kirilenko, I. A. Eliseev, Alexander N. Smirnov, Stefan Ivanov, T. V. Shubina, Dmitrii V. Nechaev, and A. N. Semenov

Subjects
010302 applied physics, Materials science, business.industry, Nucleation, Crystal growth, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Nanolithography, 0103 physical sciences, Sapphire, Optoelectronics, Nanorod, Electrical and Electronic Engineering, 0210 nano-technology, business, Quantum well, Molecular beam epitaxy
Abstract

AbstractWe report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

Published
2018

50. Site-controlled GaN nanocolumns with InGaN insertions grown by MBE

Author

V. N. Jmerik, T. V. Shubina, Stefan Ivanov, Dmitrii V. Nechaev, Alexander N. Smirnov, V. Yu. Davydov, Galia Pozina, O. A. Koshelev, and A. N. Semenov

Subjects
010302 applied physics, History, Oxide minerals, Materials science, business.industry, Nucleation, Corundum, Crystal growth, 02 engineering and technology, Nitride, engineering.material, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Computer Science Applications, Education, 0103 physical sciences, engineering, Sapphire, Optoelectronics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract

The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire ...

Published
2017

Catalog

Books, media, physical & digital resources
See catalog results