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Genetic modification to restore cell functions in the brain can be performed through the delivery of biomolecules in a minimally invasive manner into live neuronal cells within brain tissues. However, conventional nanoscale needles are too short (lengths of ~10 µm) to target neuronal cells in ~1-mm-thick brain tissues because the neuronal cells are located deep within the tissue. Here, we report the use of nanoscale-tipped wire (NTW) arrays with diameters 100 nm and wire lengths of ~200 µm to address biomolecule delivery issues. The NTW arrays were manufactured by growth of silicon microwire arrays and nanotip formation. This technique uses pinpoint, multiple-cell DNA injections in deep areas of brain tissues, enabling target cells to be marked by fluorescent protein (FP) expression vectors. This technique has potential for use for electrophysiological recordings and biological transfection into neuronal cells. Herein, simply pressing an NTW array delivers and expresses plasmid DNA in multiple-cultured cells and multiple-neuronal cells within a brain slice with reduced cell damage. Additionally, DNA transfection is demonstrated using brain cells ex vivo and in vivo. Moreover, knockdown of a critical clock gene after injecting a short hairpin RNA (shRNA) and a genome-editing vector demonstrates the potential to genetically alter the function of living brain cells, for example, pacemaker cells of the mammalian circadian rhythms. Overall, our NTW array injection technique enables genetic and functional modification of living cells in deep brain tissue areas, both ex vivo and in vivo.

Reducing the reverse recovery charge (Q rr) is effective for reducing switching loss in field plate (FP)-MOSFETs. A lifetime killer is utilized to reduce Q rr while increasing the leakage current in the off-state. Device simulation shows that a local lifetime killer on the cathode side successfully improves the trade-off between Q rr and I DSS in comparison with that of a uniform lifetime killer. A known issue of cathode lifetime killers is overshoot voltage by hard recovery. However, the overshoot voltage of FP-MOSFET decreases with a cathode lifetime killer owing to an internal snubber, which is a feature of FP-MOSFETs. An internal snubber with a large series resistance causes a dynamic avalanche by both the increase of FP potential and excess carriers in high-speed operation. The cathode lifetime killer also improves dynamic avalanche by excess carriers. Consequently, the cathode lifetime killer is preferable for high-speed FP-MOSFETs because the Q rr–I DSS trade-off and the trade-off between dynamic avalanche and I DSS are effectively improved.