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Highly disordered NbN thin films exhibit promising superconducting and optical properties. Despite extensive study, discrepancies in its basic electronic properties persist. Analysis of the optical conductivity of disordered ultra-thin NbN films, obtained from spectroscopic ellipsometry by standard Drude-Lorentz model, provides inconsistent parameters. We argue that this discrepancy arise from neglecting the presence of quantum corrections to conductivity in the IR range. To resolve this matter, we propose a modification to the Drude-Lorentz model, incorporating quantum corrections. The parameters obtained from the modified model are consistent not only with transport and superconducting measurements but also with ab initio calculations. The revisited values describing conduction electrons, which differ significantly from commonly adopted ones, are the electron relaxation rate $\Gamma\approx1.8~\textrm{eV}/\hbar$, the Fermi velocity $v_F \approx 0.7 \times 10^{6}~\textrm{ms}^{-1}$ and the electron density of states $N(E_F)=2~$states of both spins/eV/$V_{\textrm{f.u.}}$., Comment: 10 pages, 6 figures

Appearance and origin of resonance phenomena have been studied in the annular system of underdamped Josephson junctions. If no fluxon is trapped in the system, dynamics is governed by the motion of fluxon-antifluxon pairs, while if trapped fluxons are present, they can move solely but also simultaneously with the pairs. Locking between the rotating excitations (fluxons and antifluxons) and the Josephson frequency leads to the appearance of zero field steps in the current-voltage characteristics, which can further exhibit branching due to resonance between the rotating excitations and plasma oscillations in their tale. The number of zero field steps and their branching are strongly determined by the total number of excitations present in the system. High resolution analysis further reveals not only some interesting properties of zero field steps, but also shows that the current-voltage characteristics is determined not only by the number, but also by the type of excitations, i.e., whether the dynamics is governed only by the motion of fluxon-antifluxon pairs or the trapped fluxons, or they move simultaneously in the system.

The phase dynamics of the stack of long Josephson junctions has been studied. Both inductive and capacitive couplings between Josephson junctions have been taken into account in the calculations. The IV--curve, bias current dependence of radiation power and dynamics of each JJs of the stack have been investigated. The coexistence of the charge traveling wave and fluxon states has been observed. This state can be considered as a new collective excitation in the system of coupled Josephson junctions. We demonstrate that the observed collective excitation leads to the decreasing of radiation power from the system.

Surface properties of Co-doped BaFe2As2 epitaxial superconducting thin films were inspected by X-ray photoelectron spectroscopy, scanning spreading resistance microscopy (SSRM), and point contact spectroscopy (PCS). It has been shown that surface of Fe-based superconductors degrades rapidly if being exposed to air, what results in suppression of gap-like structure on PCS spectra. Moreover, SSRM measurements revealed inhomogeneous surface conductivity, what is consistent with strong dependence of PCS spectra on contact position. Presented results suggest that fresh surface and small probing area should be assured for surface sensitive measurements like PCS to obtain intrinsic properties of Fe-based superconductors., Comment: 4 pages, 4 figures

Local surface conductivity properties and surface degradation of c-axis oriented YBa2Cu3O6+x (YBCO) thin films were studied by Scanning Spreading Resistance Microscopy (SSRM). For the surface degradation studies, the YBCO surface was cleaned by ion beam etching and the SSRM surface conductivity map has been subsequently repeatedly measured over several hours in air and pure nitrogen. Average surface conductivity of the scanned area was gradually decreasing over time in both cases, faster in air. This was explained by oxygen out-diffusion in both cases and chemical reactions with water vapor in air. The obtained surface conductivity images also revealed its high inhomogenity on micrometer and nanometer scale with numerous regions of highly enhanced conductivity compared to the surroundings. Furthermore, it has been shown that the size of these conductive regions considerably depends on the applied voltage. We propose that such inhomogeneous surface conductivity is most likely caused by varying thickness of degraded YBCO surface layer as well as varying oxygen concentration (x parameter) within this layer, what was confirmed by scanning Auger electron microscopy (SAM). In our opinion the presented findings might be important for analysis of current-voltage and differential characteristics measured on classical planar junctions on YBCO as well as other perovskites., Comment: 8 pages, 5 figures

Micro-domains of modified surface potential (SP) were created on hydroxyapatite (HAp) films by direct patterning by midenergy focused electron beam, typically available as a microprobe of Scanning Electron Microscopes. The SP distribution of these patterns has been studied on sub-micrometer scale by the Kelvin Probe Force Microscopy method as well as lysozyme adsorption. Since the lysozyme is positively charged at physiological pH, it allows us to track positively and negatively charged areas of the SP patterns. Distribution of the adsorbed proteins over the domains was in good agreement with the observed SP patterns., Comment: 6 pages, 3 figures

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed., Comment: The final version was published in Journal of Applied Physics (2012)

Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance caused by an electric field applied to the metal electrodes. The aim of this work was to study this effect on the structure metal/YBCO6/YBCO7, where YBCO7 is a metallic phase and YBCO6 is an insulator phase which arises spontaneously by out-diffusion of oxygen from a few nanometers wide YBCO surface layer. Oriented YBa2Cu3O7 thin films were prepared by the method of magnetron sputtering and consequently planar structures with metal-YBCO junction were made by the means of the optical lithography, ion etching and vacuum evaporation. On these junctions we have studied the temperature dependence of the RS effect with I-V and dI/dV-V transport measurements down to liquid He temperature. We have determined temperature dependence of the RS effect threshold voltage in the temperature range 100-300 K and showed that this dependency is compatible with common idea of oxygen ions migration under electric field within the YBCO surface layer., Comment: 13 pages, 5 figures

A method for the direct patterning of electrostatic potential at the surface of hydroxyapatite is presented here. Micro-domains of surface potential have been created on hydroxyapatite coatings by a 20 keV focused electron beam with minimal alterations of surface chemistry. The success of such approach has been confirmed by Kelvin Probe Force Microscopy measurements, which show that this method is capable of creating micron sized positive and negative local electrostatic potential. The shape and potential difference of these domains were found to depend on the dose of total injected charge from the electron beam as well as the speed with which such charge is injected., Comment: 3 pages, 2 figures, 1 table

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields., Comment: To be published in Applied Surface Science.

Two parallel stacks of coupled Josephson junctions are investigated to clarify the physics of transitions between the rotating and oscillating states and their effect on the IV-characteristics of the system. The detailed study of phase dynamics and bias dependence of the superconducting and diffusion currents allows one to explain all features of simulated IV-characteristics and demonstrate the correspondence in their behavior. The coupling between JJ in the stacks leads to the branching of IV-characteristics and a decrease in the hysteretic region. The crucial role of the diffusion current in the formation of the IV-characteristic of the parallel stacks of coupled Josephson junctions is demonstrated. We discuss the effect of symmetry in a number of junctions in the stacks and show a decrease of the branching in the symmetrical stacks. The observed effects might be useful for development of superconducting electronic devices based on intrinsic Josephson junctions.

Precursor MgB2 thin films were prepared on sapphire substrates by magnetron sputtering. Influence of ex-situ annealing process on superconducting MgB2 thin films roughness is discussed. Optimized annealing process of MgB precursor thin films in vacuum results in smooth superconducting MgB2 thin films with roughness below 10 nm, critical temperature Tcon = 31 K and transition width DTc less than 1 K. Nano-bridges based on the superconducting MgB2 thin films using optical and Focused Ion Beam lithography were prepared. Critical current density jc (4.2 K) measured on 50 nm wide strip was 7.3x106 A/cm2 and no significant loss of superconducting properties was detected. Resistance vs. temperature and critical current vs. temperature characteristics were measured on these structures using standard DC four probe measurements.

A new method of preparation of radio-frequency superconducting quantum interference devices on MgB2 thin films is presented. The variable-thickness bridge was prepared by a combination of optical lithography and of the scratching by an atomic force microscope. The critical current of the nanobridge was 0.35 uA at 4.2 K. Non-contact measurements of the current-phase characteristics and of the critical current vs. temperature have been investigated on our structures., Comment: RevTeX4. Accepted in Appl. Phys. Lett

We present the first experimental results on a device with more than two superconducting qubits. The circuit consists of four three-junction flux qubits, with simultaneous ferro- and antiferromagnetic coupling implemented using shared Josephson junctions. Its response, which is dominated by the ground state, is characterized using low-frequency impedance measurement with a superconducting tank circuit coupled to the qubits. The results are found to be in excellent agreement with the quantum-mechanical predictions., Comment: REVTeX 4, 5pp., 7 EPS figure files. N.B.: "Alec" is my first, and "Maassen van den Brink" my family name. v2: final published version, with changed title, different sample micrograph, and several clarifications

Superconductor/normal conductor/superconductor (SNS) Josephson junctions with highly transparent interfaces are predicted to show significant deviations from sinusoidal supercurrent-phase relationships (CPR) at low temperatures. We investigate experimentally the CPR of a ballistic Nb/InAs(2DES)/Nb junction in the temperature range from 1.3 K to 9 K using a modified Rifkin-Deaver method. The CPR is obtained from the inductance of the phase-biased junction. Transport measurements complement the investigation. At low temperatures, substantial deviations of the CPR from conventional tunnel-junction behavior have been observed. A theoretical model yielding good agreement to the data is presented., Comment: RevTex4, 4 pages including 3 figures

Femtosecond pump-probe studies show that carrier dynamics in MgB2 films is governed by the sub-ps electron-phonon (e-ph) relaxation present at all temperatures, the few-ps e-ph process well pronounced below 70 K, and the sub-ns superconducting relaxation below Tc. The amplitude of the superconducting component versus temperature follows the superposition of the isotropic dirty gap and the 3-dimensional gap dependences, closing at two different Tc values. The time constant of the few-ps relaxation exhibits a double-divergence at temperatures corresponding to the Tc's of the two gaps., Comment: Accepted for publication in Phys.Rev.Lett

Superconducting MgB2 thin films were prepared on 50-micrometer-thick, flexible polyamide Kapton-E foils by vacuum co-deposition of Mg and B precursors with nominal thickness of about 100 nm and a special ex-situ rapid annealing process in an Ar or vacuum atmosphere. In the optimal annealing process, the Mg-B films were heated to approximately 600 C, but at the same time, the backside of the structures was attached to a water-cooled radiator to avoid overheating of the plastic substrate. The resulting MgB2 films were amorphous with the onset of the superconducting transition at T_(c,on) about 33 K and the transition width of approximately 3 K. The critical current density was > 7x10^5 A/cm^2 at 4.2 K, and its temperature dependence indicated a granular film composition with a network of intergranular weak links. The films could be deposited on large-area foils (up to 400 cm^2) and, after processing, cut into any shapes (e.g., stripes) with scissors or bent multiple times, without any observed degradation of their superconducting properties., Comment: 3 figures

We report electrical measurements showing the degradation processes of LaMnO$_{3-y}$ (LaMnO) in LaMnO/normal metal interface in both point contact and planar-type junctions. Immediately after the preparation of the interface, the degradation process was followed by measuring the evolution of the junction resistance versus time. This process is characterized by the appearance of a second maximum in the resistance vs. temperature (R-T) dependence at temperatures lower than the Curie temperature T$_c$, at which the metal-insulator transition occurs in the bulk. These effects are explained in terms of the formation of a depleted interface layer in LaMnO caused by an out-diffusion of oxygen from the manganite surface to the normal metal. This assumption is confirmed by XPS measurement. Similar results on LaSrMnO$_{3-y}$ interfaces are also obtained., Comment: 4 pages, 3 figures, accepted for publication in Appl. Phys. Lett.(2002)

Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions below about 1000 nm, onset critical temperature Tcon near 39 K and width of phase transition about 1 K. Both, ex-situ and in-situ annealed co-deposited boron and magnesium thin films on sapphire and silicon substrates give smooth nanocrystalline films. DC properties of nanocrystalline MgB2 films co-deposited on silicon substrate reached Tcon = 33 K and zero resistance Tco = 27 K, the highest values received until now on Si substrates. In addition, microwave analyses prove the existence of superconducting parts of the film below 39 K. This result confirms the possibility to synthesise nanocrystalline superconducting MgB2 thin films on silicon substrate with critical temperature near 39 K, prepared by vacuum co-deposition of boron and magnesium films., Comment: 7 pages

The paper presents detailed Raman scattering study of the unusually broad E2g phonon mode in MgB2 crystal. For the first time, it is shown by the polarized Raman scattering on few-micron-size crystallites with natural faces that the observed broad Raman feature really does obey the selection rules of an E2g mode. Raman spectra on high quality polycrystalline superconducting MgB2 wires reveal a very symmetric E2g phonon line near 615 1/cm with the room temperature linewidth of 260 1/cm only. Additional scattering of different polarization dependence, observed in certain crystallites is interpreted as weighted phonon density of states induced by lattice imperfections., Comment: 4 pages + 7 figures

MgB2 superconducting wires with critical temperature Tc approaching 40 K were used for preparation of MgB2/Ag and MgB2/In junctions. The differential conductance vs. voltage characteristics of N-S junctions exhibit clear contribution of Andreev reflection. Using modified BTK theory for s-wave superconductors two order parameters 4 meV and 2.6 meV have been determined from temperature dependencies. Surprisingly, larger order parameter vanishes at lower temperature ~20 K than smaller one with Tc 38 K. Both the magnitudes of the order parameters and their critical temperatures are in good agreement with theoretical calculations of electron-phonon coupling in MgB$_2$ carried out by Liu et al., Comment: revised manuscript