1. Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1.
- Author
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Jeon, Hyung Min, Leedy, Kevin D., Look, David C., Chang, Celesta S., Muller, David A., Badescu, Stefan C., Vasilyev, Vladimir, Brown, Jeff L., Green, Andrew J., and Chabak, Kelson D.
- Subjects
PULSED laser deposition ,CARRIER density ,TRANSMISSION electron microscopy ,X-ray microscopy ,X-ray diffraction ,GALLIUM alloys - Abstract
Conductive homoepitaxial Si-doped β-Ga
2 O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3 , mobility = 64.5 cm2 V−1 s−1 , and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2 O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2 O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications. [ABSTRACT FROM AUTHOR]- Published
- 2021
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