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Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0.67Sr0.33MnO3/Pt bilayers which are prepared by oxide molecular beam epitaxy. The damping coefficient (α) of a La0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104. However the LSMO/Pt bilayers exhibit a decrease in α with an increase in Pt thickness. This decrease in the value of α is probably due to high anti-damping like torque. Furthermore, we have investigated the angle dependent inverse spin Hall effect (ISHE) to quantify the spin pumping voltage from other spin rectification effects such as the anomalous Hall effect and anisotropic magnetoresistance. We have observed a high spin pumping voltage (∼20 μV). The results indicate that both anti-damping and spin pumping phenomena occur simultaneously.

It is now well established that the peculiar linear-in-momentum dependence of the Rashba (and of the Dresselhaus) spin-orbit coupling leads to the vanishing of the spin Hall conductivity in the bulk of a two-dimensional electron gas (2DEG). In this paper we discuss how generic magnetic couplings change this behaviour providing then a potential handle on the spin Hall effect. In particular we examine the influence of magnetic impurities and an in-plane magnetic field. We find that in both cases there is a finite spin Hall effect and we provide explicit expressions for the spin Hall conductivity. The results can be obtained by means of the quasiclassical Green function approach, that we have recently extended to spin-orbit coupled electron systems.

Spin Hall effect (SHE) is the generation of spin current due to an electric field, and has been observed in a variety of materials. The analogous spin Hall current can be induced by chemical potential and temperature gradient, both of which are present in hot and dense nuclear matter created in heavy-ion collisions. In this letter, we investigate the perspective of detecting spin Hall current experimentally. We propose to measure "directed spin flow", the first Fourier coefficients of local spin polarization of $\Lambda$ ($\bar{\Lambda}$) hyperon, at central collisions to probe spin Hall current. To quantify induced spin current, we evaluate relevant transport coefficients using thermal field theory. We benchmark the magnitude of the induced "directed spin flow" at two representatively collisions energies, namely $\sqrt{s}_{NN}=200~{\rm GeV}$ and $\sqrt{s}_{NN}=19.6~{\rm GeV}$, by employing a phenomenologically motivated freeze-out prescription. At both beam energies, the resulting "directed spin flow" ranges from $10^{-4}$ to $10^{-3}$, and is very sensitive to the rapidity., Comment: 8 pages, 4 figures; published version

Determining the detailed spin texture of topological surface states is important when one wants to apply topological insulators in spintronic devices. In principle, the in-plane spin component of the surface states can be measured by a method analogous to the so-called Meservey-Tedrow technique. In the present work we suggest that the out-of-plane spin component can be determined by spin Hall effect tunneling spectroscopy. We derive an analytical formula that allows to extract the out-of-plane spin component from spin Hall effect tunneling spectra. We test our formula using realistic tight-binding models of Bi$_2$Se$_3$ and Sb$_2$Te$_3$. We demonstrate that the extracted out-of-plane spin polarization is in very good agreement with the actual out-of-plane spin polarization.

The authors demonstrate the magnetization dependent spin Hall effect where the spin polarization of pure spin current can be additionally manipulated by the magnetization.

In an easy-plane antiferromagnet with the Dzyaloshinskii–Moriya interaction (DMI), magnons are subject to an effective spin-momentum locking. An in-plane temperature gradient can generate interfacial accumulation of magnons with a specified polarization, realizing the magnon thermal Edelstein effect. We theoretically investigate the injection and detection of this thermally driven spin polarization in an adjacent heavy metal with a strong spin Hall effect. We find that the inverse spin Hall voltage depends monotonically on both temperature and the DMI but non-monotonically on the hard-axis anisotropy. Counterintuitively, the magnon thermal Edelstein effect is an even function of a magnetic field applied along the Neel vector.

We report an unconventional quantum spin Hall phase in the monolayer WTe2, which exhibits hitherto unknown features in other topological materials. The low symmetry of the structure induces a canted spin texture in the yz plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized (2e2/h) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multiprobe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials., M. V. acknowledges support from “La Caixa” Foundation and the Centre for Advanced 2D Materials at the National University of Singapore for its hospitality. X. W. acknowledges the ANR Flagera GRANSPORT funding. ICN2 authors were supported by the European Union Horizon 2020 research and innovation programme under Grant Agreement No. 881603 (Graphene Flagship) and No. 824140 (TOCHA, H2020-FETPROACT-01-2018). ICN2 is funded by the CERCA Programme/Generalitat de Catalunya, and is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV2017-0706). V. M. P. acknowledges the support of the National Research Foundation (Singapore) under its Medium-Sized Centre Programme (R-723-000-001-281).

We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple relation breaks down for Py at higher temperatures as well as for the other ferromagnetic metals at any temperature. We find that, in general, the relation between the SHE and AHE is more complex, with the temperature dependence of the SHE being much stronger than that of AHE., 7 pages, 5 figures

The miniaturization of complementary metal–oxide–semiconductor (CMOS) devices becomes increasingly difficult due to fundamental limitations and the increase of leakage currents. Large research efforts are devoted to find alternative concepts that allow for a larger data-density and lower power consumption than conventional semiconductor approaches. Spin waves have been identified as a potential technology that can complement and outperform CMOS in complex logic applications, profiting from the fact that these waves enable wave computing on the nanoscale. The practical application of spin waves, however, requires the demonstration of scalable, CMOS compatible spin-wave detection schemes in material systems compatible with standard spintronics as well as semiconductor circuitry. Here, we report on the wave-vector independent detection of short-waved spin waves with wavelengths down to 150 nm by the inverse spin Hall effect in spin-wave waveguides made from ultrathin Ta/Co8Fe72B20/MgO. These findings open up...

Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.

Electrical injection of spin current via the spin Hall effect has a huge technological implication for spin transfer torque devices and in magnon spintronics. This effect generates a spin current perpendicular to a charge current but has so far relied on expensive heavy metals. This paper uncovers a new mechanism present in ferromagnets, the anomalous spin Hall effect, where the magnetization of the ferromagnet is used to tune the spin injection efficiency up to a level greater than that found in heavy metals. The authors demonstrate this anomalous mechanism via an experimental advance where nonlocal magnon transport in a ferrimagnetic insulator (YIG) was achieved using a ferromagnetic metal (permalloy) for efficient and tunable electrical injection and detection of magnons.

The needs of high speed performance electronic devices for various applications require novel materials and new physical phenomena. For these purposes we propose to study new physical effects based on electron scattering on magnetic skyrmions and vortices distributed in a 2D ferromagnetic material. We show that the topological spin Hall effect can be efficiently employed for the filtering, switching, and separation of spin currents. For some values of the parameters (conduction electron concentrations, and skyrmion/vortex sizes) it is possible to separate Hall currents for different electron spin projections as it is like for different carrier charges (electrons and holes) in the normal Hall effect. The calculations are performed using the Boltzmann kinetic equation for the nonequilibrium distribution function and the Lippmann-Schwinger equation for the transition matrix in the whole range of the adiabaticity parameter. The spin filtering due to the skyrmion/vortex scattering can be several orders of magnitude more efficient in the narrow range of the electron concentrations than that of the ordinary ferromagnetic spin polarization in spintronics.

Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT. However, several experiments have revealed an apparent discrepancy between damping enhancement and dampinglike SOT regarding their dependence on NM thickness. Here, using linewidth and phase-resolved amplitude analysis of vector network analyzer ferromagnetic resonance (VNA-FMR) measurements, we simultaneously extract damping enhancement and both fieldlike and dampinglike inverse SOT in ${\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20}$/Pt bilayers as a function of Pt thickness. By enforcing an interpretation of the data which satisfies Onsager reciprocity, we find that both the damping enhancement and dampinglike inverse SOT can be described by a single spin diffusion length $(\ensuremath{\approx}4\phantom{\rule{0.16em}{0ex}}\mathrm{nm})$, and that we can separate the spin pumping and spin-memory loss contributions to the total damping. This analysis indicates that less than 40% of the angular momentum pumped by FMR through the ${\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20}$/Pt interface is transported as spin current into the Pt. On account of the spin-memory loss and corresponding reduction in total spin current available for spin-charge transduction in the Pt, we determine the Pt spin Hall conductivity $[{\ensuremath{\sigma}}_{\mathrm{SH}}=(2.36\ifmmode\pm\else\textpm\fi{}0.04)\ifmmode\times\else\texttimes\fi{}{10}^{6}\phantom{\rule{0.28em}{0ex}}{\ensuremath{\omega}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{m}}^{\ensuremath{-}1}]$ and bulk spin Hall angle $({\ensuremath{\theta}}_{\mathrm{SH}}=0.387\ifmmode\pm\else\textpm\fi{}0.008)$ to be larger than commonly cited values. These results suggest that Pt can be an extremely useful source of SOT if the FM/NM interface can be engineered to minimize spin loss. Lastly, we find that self-consistent fitting of the damping and SOT data is best achieved by a model with Elliott-Yafet spin relaxation and extrinsic inverse spin Hall effect, such that both the spin diffusion length and spin Hall conductivity are proportional to the Pt charge conductivity.

We demonstrate spin pumping and inverse spin Hall effect (ISHE) in an all oxide heterostructure composed of two oxides with different respective crystal structures. Y3Fe5O12 (YIG) is used as a spin source, being a perfect candidate because of its low damping and insulating behavior. SrRuO3 (SRO), a perovskite oxide with metallic conductivity, serves as a spin sink. Spin pumping is shown by the increase of the damping in ferromagnetic resonance for the YIG in the presence of an SRO top layer and by the inverse spin Hall effect appearing in the SRO. Transmission electron microscopy shows that the growth of YIG is fully epitaxial, while the SRO grows in islands of several polycrystaline phases, a fact which strongly influences the measured ISHE. The magnetization of the YIG remains unaffected by the SRO layer while the SRO no longer shows the low temperature ferromagnetism typically observed in monocrystalline layers.

We consider the spin-orbit-induced spin Hall effect and spin swapping in diffusive superconductors. By employing the nonequilibrium Keldysh Green's function technique in the quasiclassical approximation, we derive coupled transport equations for the spectral spin and particle distributions and for the energy density in the elastic scattering regime. We compute four contributions to the spin Hall conductivity, namely, skew scattering, side jump, anomalous velocity, and the Yafet contribution. The reduced density of states in the superconductor causes a renormalization of the spin Hall angle. We demonstrate that all four of these contributions to the spin Hall conductivity are renormalized in the same way in the superconducting state. In its simplest manifestation, spin swapping transforms a primary spin current into a secondary spin current with swapped current and polarization directions. We find that the spin-swapping coefficient is not explicitly but only implicitly affected by the superconducting gap through the renormalized diffusion coefficients. We discuss experimental consequences for measurements of the (inverse) spin Hall effect and spin swapping in four-terminal geometries. In our geometry, below the superconducting transition temperature, the spin-swapping signal is increased an order of magnitude while changes in the (inverse) spin Hall signal are moderate. © 2017 American Physical Society

In this work we address optical orientation, a process consisting in the excitation of spin polarized electrons across the gap of a semiconductor. We show that the combination of optical orientation with spin-dependent scattering leading to the inverse spin-Hall effect, i.e., to the conversion of a spin current into an electrical signal, represents a powerful tool to generate and detect spin currents in solids. We consider a few examples where these two phenomena together allow addressing the spin-dependent transport properties across homogeneous samples or metal/semiconductor Schottky junctions.

Topological crystalline insulator SnTe is a promising material for future spintronics applications because of the strong spin-orbit coupling and surface states protected by the mirror symmetry of the crystal. In this paper, using a high-quality epitaxial (001)-oriented Fe/SnTe/CdTe/ZnTe heterostructure grown on GaAs, we successfully observe the inverse spin Hall effect in SnTe induced by spin pumping, which is confirmed by detailed analyses of the dependence of the electromotive force on the microwave power, magnetic-field angle, and temperature. By a rough estimation, a relatively large spin Hall angle of \ensuremath{\sim}0.01 is obtained for bulk SnTe at room temperature. This large value may be partially caused by the surface states. Our result suggests that SnTe can be used for efficient spin-charge current conversion.

We systematically measure and analyze the spin diffusion length and the spin Hall effect in Pt with a wide range of conductivities using the spin absorption method in lateral spin valve devices. We observe a linear relation between the spin diffusion length and the conductivity, evidencing that the spin relaxation in Pt is governed by the Elliott-Yafet mechanism. We find a single intrinsic spin Hall conductivity ($\sigma_{SH}^{int}=1600\pm150\: \Omega^{-1}cm^{-1}$) for Pt in the full range studied which is in good agreement with theory. For the first time we have obtained the crossover between the moderately dirty and the superclean scaling regimes of the spin Hall effect by tuning the conductivity. This is equivalent to that obtained for the anomalous Hall effect. Our results explain the spread of the spin Hall angle values in the literature and find a route to maximize this important parameter., Comment: 11 pages, 4 figures

Here we report the measurement of the interfacial spin accumulation induced by the spin Hall effect in Pt and W thin films using magneto-optical Kerr microscopy. We show that the Kerr rotation has opposite sign in Pt and W and scales linearly with current density. By comparing the experimental results with ab-initio calculations of the spin Hall and magneto-optical Kerr effects, we quantitatively determine the current-induced spin accumulation at the Pt interface as $5*10^{-12} \mu_B$A$^{-1}$cm$^2$ per atom. From thickness-dependent measurements, we determine the spin diffusion length in a single Pt film to be $11 \pm 3$ nm, which is significantly larger compared to that of Pt adjacent to a magnetic layer., Comment: 16 pages including Supplemental Material

We show that quantum spin Hall (QSH) effect does not occur in a square lattice model due to cancellation of the intrinsic spin-orbit coupling coming from different hopping paths. However, we show that QSH effect can be induced by the presence of staggered magnetic fluxes alternating directions square by square. When the resulting Peierls phase takes a special value "Equation missing", the system has a composite symmetry ΘΡ−"Equation missing" with Θ the time-reversal operator and Ρ−"Equation missing" transforming the Peierls phase from γ to γ − "Equation missing", which protects the gapless edge states. Once the phase deviates from "Equation missing", the edge states open a gap, as the composite symmetry is broken. We further investigate the effect of a Zeeman field on the QSH state, and find that the edge states remain gapless for "Equation missing". This indicates that the QSH effect is immune to the magnetic perturbation.

We perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are photogenerated at the Γ point of the Ge Brillouin zone using circularly-polarized light. After the ultrafast Γ−L scattering in the Ge conduction band, which partially preserves the spin polarization, electrons diffuse into the Pt layer where spin-dependent scattering with Pt nuclei yields a transverse electromotive field EISHE. The ISHE signal dependence as a function of the incident photon energy is investigated and interpreted in the frame of a one-dimensional spin drift-diffusion model. This allows estimating the electron spin lifetime at the L-valleys to be τs=1 ns.

Since their discovery, topological insulators have been expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin--momentum locking. However, the bulk doping problem remains an obstacle that hinders such application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits large intrinsic spin Hall effects that can be utilized to generate and detect spin currents. Our $ab~initio$ calculations reveal a large spin Hall conductivity that is comparable to that of $4d$ and $5d$ transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin--orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials., Comment: 7 pages including supplemenatry informaiton, 3 + 4 figures and 1 table

We report the observation of spin pumping and inverse spin Hall effects in antiferromagnetically coupled [Co/Ru/Co]/Pt heterostructures. The “spin-flop” magnetization process observed in antiferromagnetically exchange coupled Co layers combined with spin pumping and inverse spin Hall effects allowed us to detect both transversal and longitudinal charge accumulations. By controlling the exchange coupling strength and the spin flop transition in the magnetization process, it was possible to produce spin currents polarized in different directions. Fil: Aviles Felix, Luis Steven. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina Fil: Butera, Alejandro Ricardo. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina Fil: Gomez, Javier Enrique. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina

Electronic properties like current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom present in quantum particles. The spin Hall effects (SHEs), first proposed 40 years ago, are an unusual class of phenomena where flowing particles experience orthogonally directed spin-dependent Lorentz-like forces, analogous to the conventional Lorentz force for the Hall effect, but opposite in sign for two spin states. Such spin Hall effects have been observed for electrons flowing in spin-orbit coupled materials such as GaAs or InGaAs and for laser light traversing dielectric junctions. Here we observe the spin Hall effect in a quantum-degenerate Bose gas, and use the resulting spin-dependent Lorentz forces to realize a cold-atom spin transistor. By engineering a spatially inhomogeneous spin-orbit coupling field for our quantum gas, we explicitly introduce and measure the requisite spin-dependent Lorentz forces, in excellent agreement with our calculations. This atomtronic circuit element behaves as a new type of velocity-insensitive adiabatic spin-selector, with potential application in devices such as magnetic or inertial sensors. In addition, such techniques --- for both creating and measuring the SHE --- are clear prerequisites for engineering topological insulators and detecting their associated quantized spin Hall effects in quantum gases. As implemented, our system realized a laser-actuated analog to the Datta-Das spin transistor., Accepted version

The spin Hall effect (SHE) [1] allows for a reciprocal conversion between charge and spin currents using the spin orbit coupling which can be at the core of several promising spintronics devices. The spin orbit interaction is used to produce a transverse flow of spin or charge in response to a longitudinal excitation, these are the direct or inverse SHE. The spin Hall angle (SHA), the ratio of longitudinal and transverse electronic conductivities, is the characterizing parameter of this conversion. So far, large SHA have been reported in transition metals like Pt, Pd, W, Beta-Ta and in a few alloys with large spin orbit coupling impurities: CuIr, CuBi or CuPb [2]. In this presentation we will report on our study of the SHA in AuW alloys [3] which exhibits a non-monotonic relation with the W concentration. In the regime of diluted alloys the behaviour suggests a dominant side-jump contribution to the spin Hall resistivity, the SHA increasing with the W concentration. We will present experiments demonstrating the requirement of new spin-absorption model in lateral spin valves adapted to the case of strong spin absorption for a correct evaluation of the SHA. Altogether with complementary Ferromagnetic Resonance Spin-Pumping studies, it then leads to SHA as large as +15%. At higher W content the SHA sign is reversed, becoming negative as for pure W.

When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of spin through an insulator or vacuum to reach a ferromagnet without transferring charge. In a normal metal/insulator/ferromagnetic insulator trilayer (such as Pt/oxide/YIG), the quantum tunneling explains the spin-transfer torque and spin pumping that exponentially decay with the thickness of the insulator. In a normal metal/insulator/ferromagnetic metal trilayer (such as Pt/oxide/Co), the spin transfer in general does not decay monotonically with the thickness of the insulator. Combining with the spin Hall magnetoresistance, this tunneling mechanism points to the possibility of a new type of tunneling spectroscopy that can probe the magnon density of states of a ferromagnetic insulator in an all-electrical and noninvasive manner., Comment: 9 pages, 3 figures

The inverse spin-Hall effect, i.e., conversion spin currents into electromotive force, has been investigated in Pt1-xMx(M=Cu, Au) thin films. We measured the electric voltage due to the inverse spin-Hall effect induced by spin pumping in Ni81Fe19/Pt1-xMx(M=Cu, Au) bilayer systems with changing x and the species of M. The experimental results revealed that the dependence of estimated spin-Hall angle θISHE on longitudinal conductivity was well reproduced by θISHE ∝ σxx0.54, indicating that the spin-Hall angle in metallic films could be controlled by changing the species of impurity and concentration in the metallic films.

The spin Hall effect creates a spin current in response to a charge current in a material that has strong spin-orbit coupling. The size of the spin Hall effect in many materials is disputed, requiring independent measurements of the effect. We develop a novel mechanical method to measure the size of the spin Hall effect, relying on the equivalence between spin and angular momentum. The spin current carries angular momentum, so the flow of angular momentum will result in a mechanical torque on the material. We determine the size and geometry of this torque and demonstrate that it can be measured using a nanomechanical device. Our results show that measurement of the spin Hall effect in this manner is possible and also opens possibilities for actuating nanomechanical systems with spin currents., 5 pages + 2 pages supplementary material, 4 figures total

The intrinsic spin Hall effect originates from the topology of the Bloch bands in momentum space. The duality between real space and momentum space calls for a spin Hall effect induced from a real space topology in analogy to the topological Hall effect of skyrmions. We theoretically demonstrate the topological spin Hall effect in which a pure transverse spin current is generated from a skyrmion spin texture.

We demonstrate the generation and detection of spin-torque ferromagnetic resonance in $\text{Pt/}{\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG) bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc current through the inverse spin Hall effect. The voltage is measured with applied magnetic field directions that range from in plane to nearly perpendicular. When compared with theory, we find that the real and imaginary parts of the spin mixing conductance have out-of-plane angular dependences.

The spin Hall effect and its inverse effect, caused by the spin orbit interaction, provide the interconversion between spin current and charge current. Since the effects make it possible to generate and manipulate spin current electrically, how to realize the large effects is an important issue in both physics and applications. To do so, materials with heavy elements, which have strong spin orbit interaction, have been examined so far. Here, we propose a new mechanism to enhance the spin Hall effect without heavy elements, \ie surface roughness in metallic thin films. We examine Cu and Al thin films with surface roughness and find that they give the spin Hall effect comparable to that in bulk Au. We demonstrate that the spin Hall effect induced by surface roughness has the side jump contribution but not skew scattering., Comment: 5 pages, 4 figures

We have shown that the non-Abelian spin-orbit gauge field strength of the Rashba and Dresselhaus interactions, when split into two Abelian field strengths, the Hamiltonian of the system can be re-expressed as a Landau level problem with a particular relation between the two coupling parameters. The quantum levels are created with up and down spins with opposite chirality and leads to the quantum spin Hall effect., Comment: To appear in Physics Letters A

When current is passed through certain semiconductors or metals, spins of opposite sign accumulate on opposing boundaries. The phenomenon is known as the spin Hall effect, and now, for the first time, its dynamics has been measured directly. The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin–orbit physics as well as a valuable capability for potential spintronics devices1,2,3,4. One realization of these spin–orbit phenomena, the spin Hall effect5,6, has been studied as a means of all-electrical spin-current generation and spin separation in both semiconductor and metallic systems. Previous measurements of the spin Hall effect7,8,9,10,11 have focused on steady-state generation and time-averaged detection, without directly addressing the accumulation dynamics on the timescale of the spin-coherence time. Here, we demonstrate time-resolved measurement of the dynamics of spin accumulation generated by the extrinsic spin Hall effect in a doped GaAs semiconductor channel. Using electrically pumped time-resolved Kerr rotation, we image the accumulation, precession and decay dynamics near the channel boundary with spatial and temporal resolution and identify multiple evolution time constants. We model these processes with time-dependent diffusion analysis using both exact and numerical solution techniques and find that the underlying physical spin-coherence time differs from the dynamical rates of spin accumulation and decay observed near the sample edges.

Laterally configured ferromagnetic/nonmagnetic multiterminal structures have great potential for developing future spintronic devices. We demonstrate two kinds of novel spintronic devices. One is a lateral spin valve with noncollinear dual spin injectors by which the direction of the spin accumulation in a nonmagnetic metal can be changed by varying the currents injected by two spin injectors. The other is a transformer between spin and charge currents using the spin Hall effect. A large spin Hall conductivity of 260 S/cm at room temperature, which is 104 times larger than that in semiconductor systems, is found in the Pt wire. We also demonstrate the reciprocal relation between the spin and charge currents. Temperature dependence of the spin Hall conductivity is also discussed.

In order to describe correctly the interplay of extrinsic and intrinsic spin-orbit mechanisms to the spin Hall effect, it is necessary to consider different sources of spin relaxation. We take into account the spin relaxation time $\tau_{DP}$ due to the Dyakonov-Perel mechanism as well as the Elliot-Yafet spin-relaxation time $\tau_s$ due to the spin-orbit scattering from impurities. The total spin Hall conductivity depends crucially on the ratio $\tau_s /\tau_{DP}$., Comment: 4 pages, 2 figures, submitted to Physica E, Proceedings of EP2DS-18

A thin film system with the spin Hall effect and the anisotropic effect is investigated by use of the effective mean-free-path model. Its spin accumulation from the spin Hall effect is supressed by the the anisotropic effect.

We study hole spin transport in semiconductor systems with total angular momentum J = 3/2. By deriving an expression for the polarisation vector we show that the in-plane polarisation vanishes whenever only heavy hole channels are open in the leads. We further derive a set of constraints on the spin transport through a symmetry analysis and study the hole spin Hall effect in the presence of randomly distributed scatterers.

We analyze the effect known as "spin current swapping" (SCS) due to electron-impurity scattering in a uniform spin-polarized two-dimensional electron gas. In this effect a primary spin current $J_i^a$ (lower index for spatial direction, upper index for spin direction) generates a secondary spin current $J_a^i$ if $i \neq a$, or $J_j^j$, with $j\ne i$, if $i= a$. Contrary to naive expectation, the homogeneous spin current associated with the uniform drift of the spin polarization in the electron gas does not generate a swapped spin current by the SCS mechanism. Nevertheless, a swapped spin current will be generated, if a magnetic field is present, by a completely different mechanism, namely, the precession of the spin Hall spin current in the magnetic field. We refer to this second mechanism as Hanle spin Hall effect, and we notice that it can be observed in an experiment in which a homogeneous drift current is passed through a uniformly magnetized electron gas. In contrast to this, we show that an unambiguous observation of SCS requires inhomogeneous spin currents, such as those that are associated with spin diffusion in a metal, and no magnetic field. An experimental setup for the observation of the SCS is therefore proposed., 8 pages, 5 figures

We investigate the possibility of exciting self-oscillation in a perpendicular ferromagnet by the spin Hall effect on the basis of a nonlinear analysis of the Landau-Lifshitz-Gilbert (LLG) equation. In the self-oscillation state, the energy supplied by the spin torque during a precession on a constant energy curve should equal the dissipation due to damping. Also, the current to balance the spin torque and the damping torque in the self-oscillation state should be larger than the critical current to destabilize the initial state. We find that the second condition in the spin Hall system is not satisfied by deriving analytical solutions of the energy supplied by the spin transfer effect and the dissipation due to the damping from the nonlinear LLG equation. This indicates that the self-oscillation of a perpendicular ferromagnet cannot be excited solely by the spin Hall torque., 7pages, 3 figures

We examine the Dyakonov and Perel theory of the Spin Hall effect (SHE) from the viewpoint of irreversible thermodynamics, which is more constraining than the symmetry arguments of pure phenomenology. As thermodynamic driving forces we include the thermal gradient, the gradient of the electrochemical potential (rather than the potential gradient and density gradient separately), and the ``internal'' magnetic field that is thermodynamically conjugate to the magnetization. In turn, we obtain the form of bulk transport coefficients relating the fluxes to the thermodynamic forces. Relative to Dyakonov and Perel, in addition to the new terms due to thermal gradients, the Onsager relations require three new (nonlinear) terms in the current density, and minor revisions in the current density and spin current density. For a longitudinal current along a strip, the center-to-edge transverse voltage difference, due both to the $\ensuremath{-}\ensuremath{\beta}\stackrel{P\vec}{P}\ifmmode\times\else\texttimes\fi{}\stackrel{P\vec}{E}$ term of of the number current density $\stackrel{P\vec}{q}$ and to one of the new current density terms, is calculated. An ac capacitative probe likely would not significantly disturb this effect. An appendix explicitly relates the anomalous Hall Effect to the term in the (vector) number flux that is Onsager related to the SHE term in the (tensor) spin flux.

Due to its transverse nature, spin Hall effects (SHE) provide the possibility to excite and detect spin currents and magnetization dynamics even in magnetic insulators. Magnetic insulators are outstanding materials for the investigation of nonlinear phenomena and for novel low power spintronics applications because of their extremely low Gilbert damping. Here, we report on the direct imaging of electrically driven spin-torque ferromagnetic resonance (ST-FMR) in the ferrimagnetic insulator Y$_3$Fe$_5$O$_{12}$ based on the excitation and detection by SHEs. The driven spin dynamics in Y$_3$Fe$_5$O$_{12}$ is directly imaged by spatially-resolved microfocused Brillouin light scattering (BLS) spectroscopy. Previously, ST-FMR experiments assumed a uniform precession across the sample, which is not valid in our measurements. A strong spin-wave localization in the center of the sample is observed indicating the formation of a nonlinear, self-localized spin-wave `bullet'.

Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information processing. This coupling can be regulated with quantum confinement in semiconductor heterostructures through band structure engineering. Here we investigate the spin Hall effect and current-induced spin polarization in a two-dimensional electron gas confined in (110) AlGaAs quantum wells using Kerr rotation microscopy. In contrast to previous measurements, the spin Hall profile exhibits complex structure, and the current-induced spin polarization is out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. These results reveal opportunities for tuning a spin source using quantum confinement and device engineering in non-magnetic materials., Comment: Accepted for publication (2005)

We demonstrate in this article that the magnetoelectric (ME) mechanism can be exploited to control the spin current emitted in a spin pumping experiment using moderate electric fields. Spin currents were generated at the interface of a ferromagnet/metal bilayer by driving the system to the ferromagnetic resonance condition at X-Band (9.78 GHz) with an incident power of 200 mW. The ME structure, a thin (20 nm) FePt film grown on top of a polished 011-cut single crystal lead magnesium niobate-lead titanate (PMN-PT) slab, was prepared by dc magnetron sputtering. The PMN-PT/FePt was operated in the L-T mode (longitudinal magnetized-transverse polarized). This hybrid composite showed a large ME coefficient of 140 Oe cm/kV, allowing to easily tune the ferromagnetic resonance condition with electric field strengths below 4 kV/cm. A thin layer of Pt (10 nm) was grown on top of the PMN-PT/FePt structure and was used to generate and detect the spin current by taking advantage of its large spin-orbit coupling that produces a measurable signal via the inverse spin-Hall effect. These results proved an alternative way to tune the magnetic field at which the spin current is established and consequently the inverse spin-Hall effect signal, which can promote advances in hybrid spintronic devices. Fil: Vargas, Jose Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina Fil: Gomez, Javier Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina Fil: Aviles Felix, Luis Steven. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina Fil: Butera, Alejandro Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina

We study spin and charge accumulation and currents in two-dimensional electron gas (2DEG) with spin-orbit Rashba interactions. The Landauer–Keldysh formalism is employed to numerically compute the accumulations and currents in a 2DEG finite square sample with and without an embedded spin-independent hard-wall impurity. We find that under certain conditions the charge accumulation and the spin currents may be confined to a small region of the sample, between the defect and the positive lead. The conditions for the existence of this phenomenon are described.