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Renewable energies are increasingly playing an important role in the world's energy supply. Society demands new solutions to solve environmental issues caused by fossil fuels. The importance of photovoltaic technology has been increasing and consequently, the necessity to have more accurate models to characterise the performance of solar cells during their entire lifetime has rose as well. Performance problems may appear during devices' lifetimes associated with factors, such as weather conditions or faulty installation. Cracking might occur, leading to abrupt reductions on the produced power, quite difficult and expensive to fix. The I–V curves of a defected or cracked solar cell might not have the shape imposed by the usual models as 1M5P. In this article, cracked c-Si solar cells are modelled using a novel model: d1MxP. This model is based on the discretisation of the diode's response on models as 1M5P. Instead of imposing a shape and compute some parameters to fit it on experimental data, the proposed model connects every two points. The results suggest a better fit using the proposed model in comparison with the 1M5P, not only in the original curves, but also modelling cracked cells. As consequence of a better fitting, the computation of important figures of merit as maximum power point or fill factor, reveals to be more precise. It is concluded that the proposed model might characterise the performance of a solar cell, even cracked, which is a huge advance aiming the possibility of simulating complex problems during the cells' operation lifetime. [ABSTRACT FROM AUTHOR]

Solar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points. It is based on the discretisation of any diode model behaviour, such as the 1M5P (also known as 1D5P) or the 1M7P (also known as 2D7P). For this reason, the model is named d1MxP, meaning that it is a discrete (d) model (1M) with x parameters (xP). The modelling methodology validation process uses experimental data already published in the literature. According to the presented results, the proposed method shows increased accuracy when compared to the 1M5P or 1M7P equivalent models. The accuracy on the maximum power point and fill factor determination is relevant, resulting in an improvement of up to 3.34% in the maximum power, up to 5.70% in its voltage and up to 8.20% in its current, for the analysed data. Furthermore, Fill Factor values, have variation from up to 35.98%. The temperature influence on the silicon solar cell is also analysed, to validate the results. The proposed method allows highly accurate curve fitting to the (experimental) points and consequently, to obtain a more accurate model to analyse the performance of solar cells under different conditions. [ABSTRACT FROM AUTHOR]

Renewable energy sources are becoming more and more essential to energy production as societies evolve toward a fossil-fuel-free world. Solar energy is one of the most abundant sources of green energy. Nanoantennas can be used to improve and enhance the absorption of light into a photovoltaic cell in order to generate more current. In this study, different nanoantenna structures are analysed in tandem with a silicon solar cell in an effort to improve its output. The nanoantennas studied are metallic aperture nanoantennas made up of either silver, aluminium, gold or copper. The three geometries compared are rectangular, circular and triangular. The maximum field enhancement obtained is for an aluminium rectangular nanoantenna of 50 nm thickness. Despite this, the geometry with more improvements compared with a basic silicon cell was the circle geometry with a 100 nm radius. [ABSTRACT FROM AUTHOR]