1. Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs.
- Author
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Puzyrev, Yevgeniy, Mukherjee, Shubhajit, Chen, Jin, Roy, Tania, Silvestri, Marco, Schrimpf, Ronald D., Fleetwood, Daniel M., Singh, Jasprit, Hinckley, John M., Paccagnella, Alessandro, and Pantelides, Sokrates T.
- Subjects
MODULATION-doped field-effect transistors ,GALLIUM nitride ,POINT defects ,MONTE Carlo method ,HOT electron transistors ,ENERGY dissipation - Abstract
Monte Carlo analysis of hot-electron degradation in AlGaN/GaN high-electron mobility transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the average electron energy has a spatial peak with \langleEAVE\rangle\sim1.5~\rm eV . The peak is located at the edge of the gate. At this location, the carrier versus energy distribution has a large tail extending over 3 eV. When transferred to the lattice, this energy can cause defect dehydrogenation and device degradation. These results are consistent with the experimental data indicating maximum degradation in the semi-ON bias condition. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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