1. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems.
- Author
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Halfaya, Yacine, Bishop, Chris, Soltani, Ali, Sundaram, Suresh, Aubry, Vincent, Voss, Paul L., Salvestrini, Jean-Paul, and Ougazzaden, Abdallah
- Subjects
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HIGH electron mobility transistor circuits , *NITROGEN oxides , *WASTE gases , *GAS detectors , *ELECTRIC properties of aluminum gallium nitride - Abstract
We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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