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The performance of organic field-effect transistors (OFETs) is highly dependent on the dielectric–semiconductor interface, especially in ion-gel-gated OFETs, where a significantly high carrier density is induced at the interface at a low gate voltage. This study investigates how altering the alkyl side chain length of donor–acceptor (D-A) copolymers impacts the electrical performance of ion-gel-gated OFETs. Two difluorobenzothiadiazole-based D-A copolymers, PffBT4T-2OD and PffBT4T-2DT, are compared, where the latter features longer alkyl side chains. Although PffBT4T-2DT shows a 2.4-fold enhancement of charge mobility in the SiO2-gated OFETs compared to its counterpart due to higher crystallinity in the film, PffBT4T-2OD outperforms PffBT4T-2DT in the ion-gel-gated OFETs, manifested by an extraordinarily high mobility of 17.7 cm2/V s. The smoother surface morphology, as well as stronger interfacial interaction between the ion-gel dielectric and PffBT4T-2OD, enhances interfacial charge accumulation, which leads to higher mobility. Furthermore, PffBT4T-2OD is blended with a polymeric elastomer SEBS to achieve ion-gel-gated flexible OFETs. The blend devices exhibit high mobility of 8.6 cm2/V s and high stretchability, retaining 45% of initial mobility under 100% tensile strain. This study demonstrates the importance of optimizing the chain structure of polymer semiconductors and the semiconductor–dielectric interface to develop low-voltage and high-performance flexible OFETs for wearable electronics applications. [ABSTRACT FROM AUTHOR]

Organic electroactive materials, particularly semiconducting polymers, are at the forefront of emerging organic electronics. Among the plethora of unique features, the possibility to formulate inks out of these materials is particularly promising for the large‐scale manufacturing of electronics at lower cost on a variety of soft substrates. While solution deposition of semiconducting materials is promising for developing printed electronics, the environmental footprint of the materials and related devices needs to be considered to achieve sustainable manufacturing. Towards the development of greener printed electronics, this work investigates the utilization of a non‐toxic, environmentally‐friendly solvent, namely branched polyethylene (BPE), to formulate semiconducting inks. Focusing on a diketopyrrolopyrrole‐based (DPP) semiconducting polymer, shellac as dielectric, and BPE as the solvent, solutions were prepared in different concentrations and their rheological properties were characterized. Then, printing on polyethylene terephthalate (PET) substrates using two different techniques was performed to fabricate organic field‐effect transistors (OFETs). Both printing techniques yielded OFETs with good performance and device characteristics, averaging approximately 10−2 and 10−4 cm2 V−1 s−1, respectively, for slot‐die coating and direct‐ink writing deposition. Notably, despite some difference in threshold voltages, OFETs produced via slot‐die coating and direct‐ink writing showed comparable charge mobilities to previously reported OFETs prepared from similar materials, particularly those prepared on silicon dioxide wafers. Overall, this work confirms the suitability of BPE to formulate semiconducting inks to develop printed electronics in a greener manner. The printing methodology developed in this work also open new avenues for the design of functional printed electronics and related technologies. [ABSTRACT FROM AUTHOR]

This study introduces the first fluorene‐flanked diketopyrrolopyrrole (FDPP)‐based semiconducting polymers, named Boc‐FDPP‐CoMs (CoM = TT or BT), synthesized via copolymerization of tert‐butoxycarbonyl (t‐Boc)‐substituted FDPP as the acceptor unit with thieno[3,2‐b]thiophene (TT) or bithiophene (BT) as the donor comonomers. The incorporation of t‐Boc groups addresses challenges related to poor solubility and polymer backbone twisting associated with the FDPP building block. While Boc‐FDPP‐CoMs demonstrate solubility in common organic solvents, facilitating favourable solution‐processability for uniform film fabrication, they exhibit significant backbone twisting, leading to poor charge transport properties. Post‐deposition thermal annealing at a mild temperature as low as 170°C conveniently removes t‐Boc groups. The resulting t‐Boc‐free copolymers, NH‐FDPP‐TT and NH‐FDPP‐BT, exhibit hole mobilities up to 5.0 × 10−3 and 2.2 × 10−3 cm2 V−1 s−1 in organic field effect transistors (OFETs), respectively, representing a substantial increase compared to their counterparts with t‐Boc groups. This study underscores a meticulously designed strategy for achieving solution solubility and backbone coplanarity through side‐chain engineering for FDPP and potentially other sterically demanding building blocks to construct high‐performance semiconducting polymers for OFETs and other applications. [ABSTRACT FROM AUTHOR]

Highlights: Photonic synapse capable of multispectral color discrimination is demonstrated. Strong excited-state dipoles enable remarkable discrimination intensity (0.05–40 mW cm-2). This approach is not restricted to a specific medium in the channel layer, and convolutional neural network with synapses array achieves over 94% inference accuracy for Canadian-Institute-For-Advanced-Research-10 images. To emulate the functionality of the human retina and achieve a neuromorphic visual system, the development of a photonic synapse capable of multispectral color discrimination is of paramount importance. However, attaining robust color discrimination across a wide intensity range, even irrespective of medium limitations in the channel layer, poses a significant challenge. Here, we propose an approach that can bestow the color-discriminating synaptic functionality upon a three-terminal transistor flash memory even with enhanced discriminating capabilities. By incorporating the strong induced dipole moment effect at the excitation, modulated by the wavelength of the incident light, into the floating gate, we achieve outstanding RGB color-discriminating synaptic functionality within a remarkable intensity range spanning from 0.05 to 40 mW cm−2. This approach is not restricted to a specific medium in the channel layer, thereby enhancing its applicability. The effectiveness of this color-discriminating synaptic functionality is demonstrated through visual pre-processing of a photonic synapse array, involving the differentiation of RGB channels and the enhancement of image contrast with noise reduction. Consequently, a convolutional neural network can achieve an impressive inference accuracy of over 94% for Canadian-Institute-For-Advanced-Research-10 colorful image recognition task after the pre-processing. Our proposed approach offers a promising solution for achieving robust and versatile RGB color discrimination in photonic synapses, enabling significant advancements in artificial visual systems. [ABSTRACT FROM AUTHOR]

Organic field-effect transistors (OFETs) require ultra-precise electrical measurements due to their unique charge transport mechanisms and sensitivity to environmental factors, yet commercial semiconductor parameter analysers capable of such measurements are prohibitively expensive for many research laboratories. This study introduces a novel, cost-effective, and portable setup for high-precision OFET characterisation that addresses this critical need, providing a feasible substitute for conventional analysers costing tens of thousands of dollars. The suggested system incorporates measurement, data processing, and graphical visualisation capabilities, together with Bluetooth connectivity for local operation and Wi-Fi functionality for remote data monitoring. The device consists of a motherboard and specialised cards for low-current measurement, voltage measurement, and voltage generation, providing comprehensive OFET characterisation, including transfer and output characteristics, in accordance with IEEE-1620 standards. The system can measure current from picoamperes to milliamperes, with voltage measurements supported by high input resistance (>100 MΩ) and a voltage generation range of −30 V to +30 V. This versatile and accessible approach greatly improves the opportunities for future OFET research and development. [ABSTRACT FROM AUTHOR]

Despite recent dramatic improvements in the electronic characteristics of stretchable organic field-effect transistors (FETs), their low operational stability remains a bottleneck for their use in practical applications. Here, the operational stability, especially the bias-stress stability, of semiconducting polymer-based FETs under various tensile strains is investigated. Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs. Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content, which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain. The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules. This work provides new insights for the development of bias-stable stretchable OFETs. [ABSTRACT FROM AUTHOR]

Spermidine is an essential biomarker related to antiaging. Although the detection of spermidine levels is in high demand in life science fields, easy‐to‐use analytical tools without sample purification have not yet been fully established. Herein, we propose an organic field‐effect transistor‐based chemical sensor for quantifying the spermidine concentration in commercial cosmetics. An extended‐gate structure was employed for organic field‐effect transistor (OFET)‐based chemical sensing in aqueous media. A coordination‐bond‐based sensing system was introduced into the OFET device to visualize the spermidine detection information through changes in the transistor characteristics. The extended‐gate‐type OFET has shown quantitative responses to spermidine, which indicates sufficient detectability (i. e. the limit of detection for spermidine: 2.3 μM) considering actual concentrations in cosmetics. The applicability of the OFET‐based chemical sensor for cosmetic analysis was validated by instrumental analysis using high‐performance liquid chromatography. The estimated recovery rates for spermidine in cosmetic ingredient products (108–111 %) suggest the feasibility of cosmetic analysis based on the OFET‐based chemical sensor. [ABSTRACT FROM AUTHOR]

Calcium (Ca)-doped zinc oxide (ZnO) with 1 wt.% and 3 wt.% Ca content (CZO_1% and CZO_3%) and pure ZnO (ZO) nanoparticles (NPs) were synthesized using the sol–gel method. The X-ray diffraction (XRD) patterns and transmission electron microscopy (TEM) observations showed that calcium was incorporated in the ZnO lattice, the crystallites were nanometric in size, and the obtained NPs were prismatic in shape with sizes ranging from 40 nm to 60 nm agglomerated microspheres. Poly(3-hexylthiophene-2.5-diyl) (P3HT):ZO (PZO_50, PZO_100, and PZO_150), CZO_1% (PCZO1%_50, PCZO1%_100, and PCZO1%_150), and CZO_3% (PCZO3%_50, PCZO3%_100, and PCZO3%_150) blend thin films were prepared at a ratio from 0 mg to 150 mg. The optical characterization carried out on the P3HT:ZO, P3HT:CZO_1%, and P3HT:CZO_3% layers showed that the incorporation of pure and Ca-doped ZnO NPs had a weak influence on the chain structure and the optical gap of P3HT. The direct-bandgap energy varied with doping from 1.85 to 1.89 for ZO, 1.72 eV to 1.83 eV for PCZO_1%, and 1.69 to 1.80 for PCZO_3%. Organic field-effect transistors (OFETs) based on PZO_50, PZO_100, PZO_150, PCZO1%_50, PCZO1%_100, and PCZO1%_150, PCZO3%_50, PCZO3%_100, and PCZO3%_150 thin films used as active layers were successfully fabricated at low temperature. The electrical characterization of the nine OFETs was performed by comparison in ambient air. The results showed that the PCZO1%_150 exhibited better electrical performance, with saturation mobility (μsat) of 1.3 × 10−3 cm2 V−1 s−1. [ABSTRACT FROM AUTHOR]

It seems impossible to use silicon oxide as a suitable gate dielectric material in metal-oxide-semiconductor field effect transistors. Many researchers have studied various metal oxides, nitrides, composite, and hybrid materials in search of dielectric materials that can replace silicon oxide. Each of these materials has advantages and disadvantages. In the present work, water-induced Lithium oxide (LiOx) with the organic PEIE (polyethylene imine ethoxylated) materials has been synthesized and studied. One advantage of the present work is using deionized water for getting (LiOx) precursor solution from lithium nitrate without the use of any toxic additives, resulting in a low cost-effective and eco-friendly synthesis. By fabricating three organic field effect transistors (OFETs) with LiOx/ PEIE nanocomposite materials with the same weight ratio (1:1), desirable electrical characteristics such as higher carrier mobility (μ) of 47.3 cm2V−1 S−1 , higher on-off current ratio (Ion/Ioff) of ∼105 , minima threshold voltage (Vth) shift of ∼ 0.6 (±0.2) V, lower subthreshold swing (SS) of 3.12 mV/decade and lower tunneling-, and leakage current density (J) of 2 (nA/cm2) could be found which demonstrated eco-friendly water-induced LiOx/ PEIE can be used as an alternative gate dielectric for the future of the OFET devices. [ABSTRACT FROM AUTHOR]

The operational stability becomes a key issue affecting the commercialization for organic field-effect transistors (OFETs). It is widely recognized to be closely related to the defects and traps at the interface between dielectric and organic semiconductors, but this understanding does not always effectively address operational instability, implying that the factors influencing the operational stability have not been fully understood. Here, we reveal that the self-heating effect is another crucial factor in operational stability. By using hexagonal boron nitride (hBN) to assist interfacial thermal dissipation, the dinaphtho[2,3-b: 2',3'-f] thieno[3,2-b] thiophene (DNTT) FETs exhibit high mobility of 14.18 cm2 V-1 s-1 and saturated power density up to 1.8 × 104 W cm-2. The OFET can operate at a power density of 1.06 × 104 W cm-2 for 30,000 s with negligible performance degradation, showing excellent operational stability under high power density. This work deepens the understanding on operational stability and develops an effective way for ultrahigh stable devices. [ABSTRACT FROM AUTHOR]

The distribution of density of states (DOS) holds fundamental importance in determining charge transport within organic field–effect transistors (OFETs). Herein, the modulation of DOS distribution in OFET devices is demonstrated by altering the chain conformation of the polymer dielectrics. A rapid film‐formation technique, specifically the spin‐casting method, is used to fabricate the dielectric layer using poly(methyl methacrylate) (PMMA). This method allows for the retention of some memory of the chain conformations from the solution to the resulting dry film. This memory effect is employed to prepare thin PMMA films with different local chain conformations by adjusting the quality of the solvent. Good solvent forms solidified films with a reduced amount of gauche conformer in the PMMA chain, resulting in a narrow DOS distribution width. Consequently, the device exhibited enhanced charge mobility and a reduced subthreshold swing. The observed change in the width of the DOS distribution can be attributed to the alteration of the local energy state of the semiconductor, induced by the local chain conformation of PMMA dielectrics through electrostatics and steric interactions. [ABSTRACT FROM AUTHOR]

In this work, a gate insulator poly (4-vinylphenol) (PVP) of an organic field effect transistor (OFET) was deposited using an inkjet printing technique, realized via a high printing resolution. Various parameters, including the molecular weight of PVP, printing direction, printing voltage, and drop frequency, were investigated to optimize OFET performance. Consequently, PVP with a smaller molecular weight of 11 k and a printing direction parallel to the channel, a printing voltage of 18 V, and a drop frequency of 10 kHz showed the best OFET performance. With a direct ink writing-printed organic semiconductor, this work paves the way for fully inkjet-printed OFETs. [ABSTRACT FROM AUTHOR]

Abstract A key component of organic bioelectronics is electrolyte‐gated organic field‐effect transistors (EG‐OFETs), which have recently been used as sensors to demonstrate label‐free, single‐molecule detection. However, these devices exhibit limited stability when operated in direct contact with aqueous electrolytes. Ultrahigh stability is demonstrated to be achievable through the utilization of a systematic multifactorial approach in this study. EG‐OFETs with operational stability and lifetime several orders of magnitude higher than the state of the art have been fabricated by carefully controlling a set of intricate stability‐limiting factors, including contamination and corrosion. The indacenodithiophene‐co‐benzothiadiazole (IDTBT) EG‐OFETs exhibit operational stability that exceeds 900 min in a variety of widely used electrolytes, with an overall lifetime exceeding 2 months in ultrapure water and 1 month in various electrolytes. The devices were not affected by electrical stress‐induced trap states and can remain stable even in voltage ranges where electrochemical doping occurs. To validate the applicability of our stabilized device for biosensing applications, the reliable detection of the protein lysozyme in ultrapure water and in a physiological sodium phosphate buffer solution for 1500 min was demonstrated. The results show that polymer‐based EG‐OFETs are a viable architecture not only for short‐term but also for long‐term biosensing applications.

Organic field-effect transistors (OFETs), based on poly(3-hexylthiophene) (P3HT) enriched by indium-doped zinc oxide (IZO) nanoparticles as an active layer, were successfully prepared by the spin-coating method. We report a significant impact of IZO nanoparticles on the P3HT carrier mobility, which can be controlled by IZO-level loading. The X-ray diffraction and the UV–visible analysis conducted on P3HT/IZO nanocomposite thin films showed an enhancement of the conjugated chain length. Moreover, the improvement of the P3HT properties resulted in an increase in the polymer crystallinity and a reduction of the trap density. A particular result was illustrated corresponding to the enhancement of the carrier mobility and ION/IOFF ratio in the devices based on hybrid nanocomposite. The significant hysteresis observed in this device, which depends on IZO content and illumination under ambient conditions and renders these OFETs promising for various optoelectronic and nonvolatile memory applications. [ABSTRACT FROM AUTHOR]

Low‐cost and high‐performance electronics based on synthetically simple materials are required to fuel the deployment of smart packaging and wearable electronics. Metal phthalocyanines (MPcs) are promising semiconductors for use in n‐type organic thin film transistors (OTFTs) but often require high operating voltages. The first silicon phthalocyanine‐based OTFT with a polymer dielectric is reported as an alternative to traditional metal oxide dielectrics. Incorporating poly(methyl methacrylate) (PMMA) as the dielectric successfully reduces the threshold voltage (VT) of bispentafluorophenoxy SiPc (F10‐SiPc) from 14.9V to 7.3V while retaining high mobility. Further reduction in VT is obtained by using copolymers and blends of PMMA and dimethylamino ethyl methacrylate (DMAEMA)‐containing polymers, where a higher molar fraction of DMAEMA leads to a consistent drop in VT to ‐0.7 V. The electron‐donating groups of the tertiary amines in the DMAEMA show clear interfacial doping of the semiconductor, reducing the voltage required to populate the dielectric/semiconductor interface with charge carriers and turn on the device. Blending trace amounts of DMAEMA‐containing copolymers with PMMA proves to be an effective strategy for reducing the VT while keeping the charge mobility high, unlike when using pure copolymers with elevated DMAEMA content. Time of flight secondary ion mass spectroscopy (ToF‐SIMS) and X‐ray photoelectron spectroscopy (XPS) demonstrate that the DMAEMA‐containing copolymer is floating to the surface of the PMMA blend at the dielectric–semiconductor interface, which explains the reduced VT. Synchrotron scanning transmission X‐ray microscopy (STXM) demonstrates that PMMA promotes a more edge‐on orientation of F10‐SiPc films, compared to the more face‐on orientation when deposited on the DMAEMA containing copolymer. This study demonstrates a straightforward process for designing dielectric polymers and their blends for the reduction in VT for n‐type OTFTs. [ABSTRACT FROM AUTHOR]

The improvement of living standards and the advancement of medical technology have led to an increased focus on health among individuals. Detections of biomarkers are feasible approaches to obtaining information about health status, disease progression, and response to treatment of an individual. In recent years, organic electrochemical transistors (OECTs) have demonstrated high electrical performances and effectiveness in detecting various types of biomarkers. This review provides an overview of the working principles of OECTs and their performance in detecting multiple types of biomarkers, with a focus on the recent advances and representative applications of OECTs in wearable and implantable biomarker detections, and provides a perspective for the future development of OECT‐based biomarker sensors. [ABSTRACT FROM AUTHOR]

Highlights: Transient response plays a crucial role as a performance indicator for organic electrochemical transistors (OECTs), particularly in their application in high-speed logic circuits and neuromorphic computing systems. This review presents a systematic overview on the fundamental principles underlying OECT transient responses, emphasizing the essential roles of transient electron and ion dynamics, as well as structural evolution, in both volatile and non-volatile behaviors. We also discuss the materials, morphology, device structure strategies on optimizing transient responses. The rapid development of organic electrochemical transistors (OECTs) has ushered in a new era in organic electronics, distinguishing itself through its application in a variety of domains, from high-speed logic circuits to sensitive biosensors, and neuromorphic devices like artificial synapses and organic electrochemical random-access memories. Despite recent strides in enhancing OECT performance, driven by the demand for superior transient response capabilities, a comprehensive understanding of the complex interplay between charge and ion transport, alongside electron–ion interactions, as well as the optimization strategies, remains elusive. This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses, emphasizing advancements in device physics and optimization approaches. We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications, as well as the impact of materials, morphology, device structure strategies on optimizing transient responses. This paper not only offers a detailed overview of the current state of the art, but also identifies promising avenues for future research, aiming to drive future performance advancements in diversified applications. [ABSTRACT FROM AUTHOR]

Here, the effect of thermal annealing (TA) on the stability of solution‐sheared thin films of the semiconducting polymer poly[2,5‐bis(2‐octyldodecyl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione‐3,6‐diyl)‐alt‐(2,2′;5′,2′';5′',2′"‐quaterthiophen‐5,5′"‐diyl)] (PDPP4T) against the original coating solvent is studied, and it is shown that TA significantly improves the solvent resistance of semiconducting polymer films. Specifically, after the thin films are annealed at or above a critical temperature, the thin film thickness is largely retained when exposed to the original solvent, while for lower annealing temperatures material loss occurs, i.e., the thin film thickness is reduced due to rapid dissolution. The results of various techniques including grazing‐incidence wide‐angle x‐ray scattering (GIWAXS), atomic force microscopy (AFM), and ultraviolet‐visible‐near infrared (UV–vis‐NIR) absorption spectroscopy suggest physical changes as the cause for the increased solvent resistance. Such annealed films also show stable electrical characteristics in bottom‐gate, top‐contact (BGTC) organic field‐effect transistors (OFETs) even after solvent exposure. In initial tests, a multitude of technologically relevant polymers show such behavior, underlining the potential impact of such temperature treatments for the fabrication of multi‐layer polymer devices. [ABSTRACT FROM AUTHOR]

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A DNA sensor for detection of breast cancer based on an Electrolyte gated - organic Field effect transistor (EGOFET) is described. Poly (O-toluidine) (POT) was doped by chemical oxidation with Para Toluene sulfonic acid (PTSA) to prepare an active layer of (POT-PTSA) and casting on ITO-glass substrate having drain and source rods. The gate dielectric layer was prepared from the salmon DNA salt with Hexadecyl trimethyl ammonium chloride (CTMA) and single strand DNA (ssDNA) to prepared (DNA-CTMA-SsDNA/PMMA) coated on the surface of the active layer. The target DNA was extracted from women patients with breast cancer (5 ng/μl, 10 ng/μl, 15 ng/μl, and 30 ng/μl) of concentrations and women's health as normal. The output and transfer characteristics for EGOFET such as mobility in the linear regime (μlin), mobility in the saturation regime (μsat), threshold voltage (Vth), on/off ratio (Ion/Ioff), The trans-conductance (gm), contact resistance (Ro), and the sensitivity rate (S%). From the EGOFET characteristics can see that for VDS= -30V, the Vth is equal to (26.6, 24.8, 13.34, and -0.2) volt for (5, 10, 15, and 30) ng/μl respectively. The best sensitivity was at the concentrations (5ng/ul) where it's equal to 92.5%. However, the better behavior for the transport property of IDS versus VGS was at concentrations (15ng/ul), and the sensitivity was 58.1%. [ABSTRACT FROM AUTHOR]

Over the past decade, molecular‐switch‐embedded memory devices, particularly field‐effect transistors (FETs), have gained significant interest. Molecular switches are integrated to regulate the resistance or current levels in FETs. Despite substantial efforts, realizing large memory window with a long retention time, a critical factor in memory device functionality, remains a challenge. This is due to the inability of an isomeric state of a molecular switch to serve as a stable deep trap state within the semiconductor layer. Herein, the study addresses this limitation by introducing chemical bonding between molecular switch and conjugated polymeric semiconductor, facilitating closed isomer of diarylethene (DAE) to operate as a morphologically stable deep trap state. Azide‐ and diazirine‐anchored DAEs are synthesized, which form chemical bonds to the polymer through photocrosslinking, thereby implementing permanent and controllable trapping states nearby conjugated backbone of polymer semiconductor. Consequently, when diazirine‐anchored DAE is blended with F8T2 and subjected to photocrosslinking, the resulting organic FETs exhibit remarkable memory performance, including a memory window of 22 V with a retention time over 106 s, a high photoprogrammable on/off ratio over 103, and a high operational stability over 100 photocycles. Further, photophore‐anchored DAEs can achieve precise patterning, which enables meticulous control over the semiconductor layer structure. [ABSTRACT FROM AUTHOR]

The diketopyrrolopyrrole (DPP) unit represents one of the building blocks more widely employed in the field of organic electronics; in most of the reported DPP-based small molecules, this unit represents the electron acceptor core symmetrically coupled to donor moieties, and the solubility is guaranteed by functionalizing lactamic nitrogens with long and branched alkyl tails. In this paper, we explored the possibility of modulating the solubility by realizing asymmetric DPP derivatives, where the molecular structure is extended in just one direction. Four novel derivatives have been prepared, characterized by a common dithyenil-DPP fragment and functionalized on one side by a thiophene unit linked to different auxiliary electron acceptor groups. As compared to previously reported symmetric analogs, the novel dyes showed an increased solubility in chloroform and proved to be soluble in THF as well. The novel dyes underwent a thorough optical and electrochemical characterization. Electronic properties were studied at the DFT levels. All the dyes were used as active layers in organic field effect transistors, showing balanced charge transport properties. [ABSTRACT FROM AUTHOR]

Contact resistance has become one of the main bottlenecks that hinder further improvement of mobility and integration density of organic field‐effect transistors (OFETs). Much progress has been made in reducing contact resistance by modifying the electrode/semiconductor interface and decreasing the crystal thickness, however, the development of new organic semiconductor materials with low contact resistance still faces many challenges. Here, 2,6‐bis‐phenylethynyl‐anthracene (BPEA) is found, which is a material that combines high mobility with low contact resistance. Single‐crystal BEPA OFETs with a thickness of ≈20 nm demonstrated high mobility of 4.52 cm2 V−1 s−1, contact resistance as low as 335 Ω cm, and band‐like charge transport behavior. The calculated compatibility of the EHOMO of BPEA with the work function of the Au electrode, and the decreased |EHOMO‐ΦAu| with the increase of external electric field intensity from source to gate both contributed to the efficient charge injection and small contact resistance. More intriguingly, p‐type BPEA as a buffer layer can effectively reduce the contact resistance, improve the mobility, and meanwhile inhibit the double‐slope electrical behavior of p‐channel 2,6‐diphenyl anthracene (DPA) single‐crystal OFETs. [ABSTRACT FROM AUTHOR]

High-performance organic devices with dynamic and stable modulation are essential for building devices adaptable to the environment. However, the existing reported devices incorporating light-activated units exhibit either limited device stability or subpar optoelectronic properties. Here, we synthesize a new optically tunable polymer dielectric functionalized with photochromic arylazopyrazole units with a cis-isomer half-life of as long as 90 days. On this basis, stable dual-mode organic transistors that can be reversibly modulated are successfully fabricated. The trans-state devices exhibit high carrier mobility reaching 7.4 square centimeters per volt per second and excellent optical figures of merit, whereas the cis-state devices demonstrate stable but starkly different optoelectronic performance. Furthermore, optical image sensors are prepared with regulatable nonvolatile memories from 36 hours (cis state) to 108 hours (trans state). The achievement of dynamic light modulation shows remarkable prospects for the intelligent application of organic optoelectronic devices. [ABSTRACT FROM AUTHOR]

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W–1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics. [ABSTRACT FROM AUTHOR]

The effect of the electrolyte's counter‐ion in organic electrochemical transistors is often neglected. the influence of anions (i.e., counter ions) is investigated on organic electrochemical transistors (OECTs) with a PEDOT:PSS‐like semiconductor through device simulations. The study examined the effects of mobile anions on OECT performance under two scenarios: when anions are blocked by the semiconductor and when they can penetrate it. In each case, the OECT's ON and OFF states are analyzed. The findings show that when anions can penetrate the semiconductor, the ON/OFF ratio of the OECT remains unchanged while the transconductance significantly increases. In the ON state, the case of blocked anions is observed that the current is predominantly surface‐current, whereas it becomes volumetric only when anions can penetrate the semiconductor. Furthermore, the extreme case is explored in which anions remain stationary within the electrolyte. In this scenario, achieving a reasonable ON/OFF ratio necessitates an ion density within the electrolyte that is two orders of magnitude higher than the dopant density of the semiconductor. This work underscores the substantial influence of counter anions on OECT performance, highlighting their critical role in shaping device behavior. [ABSTRACT FROM AUTHOR]

The high transconductance gm of organic electrochemical transistors (OECTs) has received widespread attention and made OECTs a valid candidate for wearable sensor systems. However, the large transconductance is often accompanied by large switching time constants, τ, making the transconductance an imperfect benchmark. For a fair assessment, the ratio of transconductance to switching time constant gmτ$\frac{g_m}{\tau }$ has to be considered instead of any single parameter in isolation. One approach put forward to optimize OECTs is a vertical design, in which the channel length can be scaled into the sub‐micrometer regime. Here, a new vertical device geometry is proposed, in which the active volume of the mixed conductor is confined to a small cavity between source and drain, yielding excellent performance and reproducibility. It is shown that this approach yields optimized gmτ$\frac{g_m}{\tau }$ ratios instead of maximized transconductance only. However, this scaling is effective only in a small range of device dimensions and requires careful optimization of the device to not be limited by parasitic effects such as excess volume of the mixed conductor or parasitic series resistances. Overall, the design considerations discussed here provide new guidelines to optimize OECTs, not only for high transconductance but for operation at high frequencies as well. [ABSTRACT FROM AUTHOR]

The unique semiconducting characteristics of 2D materials, such as transition metal dichalcogenides (TMDs), have drawn significant interest in the field of electronic devices. However, the dependence of the device performance on the electrical properties of electrochemically exfoliated TMD nanoflakes remains unclear. In this study, the intrinsic electrical properties of diverse electrochemically exfoliated TMD nanoflakes are investigated and their applications in fully solution‐processed 2D electronics are explored. The study reveals that MoSe2 and WS2 nanoflakes are suitable candidates with moderate electron concentrations of 5.7 × 1012 and 2.5 × 1012 cm−2, respectively. These moderate electron concentrations enable a low off‐state current and high on‐state current, leading to a large on–off ratio (> 106) for the fabricated transistors. Furthermore, moderate annealing can increase the mobility by one order of magnitude by reducing the contact resistance and improving charge transport. Additionally, the trap density is significantly reduced, leading to an improved stability. Finally, fully solution‐processed 2D complementary inverters with a high voltage gain of 60 are demonstrated. This study contributes to a growing understanding of the properties of 2D materials in terms of transistor performances and promotes the development of solution‐processed devices applicable in next‐generation electronics. [ABSTRACT FROM AUTHOR]

An organic synaptic transistor (OST) that utilizes a multiple‐annealing process and an ion gate to achieve significant reductions in operating voltage and increases in transconductance is demonstrated. The OST exhibits an ultra‐short‐term plasticity (USTP) with a maximum retention time of only 20.7 ms, which does not increase with the number and duration of spikes. This is the shortest retention time yet achieved by an ion‐gel‐regulated synaptic transistor. In addition, OST‐integrated array exhibits a tunable weight plasticity and a short weight refresh time for a stable image resetting in ample time of <0.2 s. It is also sensitive to the frequency and amplitude of electrical inputs; a low‐frequency suppression and a nonlinear amplitude gain enables OST‐constructed filter for use in processing multiple types of signals. This work is a step toward constructing high‐performance and multifunctional artificial intelligent systems. [ABSTRACT FROM AUTHOR]

The presence of high contact resistance at the metal–organic semiconductor interface is a crucial issue in performance of organic field-effect transistors. In this report, an analytical expression of gate-voltage-dependent contact resistance has been derived for bottom contact organic field-effect transistor geometry. In this derivation, the thermionic injection mechanism, gate-voltage-dependent carrier mobility in the vicinity of the metal–organic semiconductor interface, and the Poole–Frenkel barrier lowering effect of the injection barrier have been taken into account. The developed analytical expression has been fitted with published data of a pentacene-based organic field-effect transistor. From the fit, hopping site density, interfacial charge density, and maximum mobility, near metal–organic semiconductor contact has been extracted. Also, numerical plots for output and transfer characteristics are plotted. [ABSTRACT FROM AUTHOR]

Donor–acceptor (D‐A) conjugated polymers have demonstrated great potential in organic field‐effect transistors application, and their aggregated structure is a crucial factor for high charge mobility. However, the aggregated structure of D‐A conjugated polymer films is complex and the structure–property relationship is difficult to understand. This review provides an overview of recent progress in controlling the aggregated structure of D‐A conjugated polymer films for higher mobility, including the mechanisms, methods, and properties. We first discuss the multilevel microstructures of D‐A conjugated polymer films, and then summarize the current understanding of the relationship between film microstructures and charge transport properties. Subsequently, we review the theory of D‐A conjugated polymer crystallization. After that, we summarize the common methods to control the aggregated structure of semi‐crystalline and near‐amorphous D‐A conjugated polymer films, such as crystallites and aggregates, tie chains, film alignment, and attempt to understand them from the basic theory of polymer crystallization. Finally, we provide the current challenges in controlling the aggregated structure of D‐A conjugated polymer films and in understanding the structure–property relationship. [ABSTRACT FROM AUTHOR]

Conjugated polymers (CPs) offer the potential for sustainable semiconductor devices due to their low cost and inherent molecular self-assembly. Enhanced crystallinity and molecular orientation in thin films of solution-processable CPs have significantly improved organic electronic device performance. In this work, three methods, namely spin coating, dip coating, and unidirectional floating-film transfer method (UFTM), were utilized with their parametric optimization for fabricating RR-P3HT films. These films were then utilized for their characterization via optical and microstructural analysis to elucidate dominant roles of molecular orientation and crystallinity in controlling charge transport in organic field-effect transistors (OFETs). OFETs fabricated by RR-P3HT thin films using spin coating and dip coating displayed field-effect mobility (μ) of 8.0 × 10−4 cm2V−1s−1 and 1.3 × 10−3 cm2V−1s−1, respectively. This two-time enhancement in µ for dip-coated films was attributed to its enhanced crystallinity. Interestingly, UFTM film-based OFETs demonstrated μ of 7.0 × 10−2 cm2V−1s−1, >100 times increment as compared to its spin-coated counterpart. This superior device performance is attributed to the synergistic influence of higher crystallinity and molecular orientation. Since the crystallinity of dip-coated and UFTM-thin films are similar, ~50 times improved µ of UFTM thin films, this suggests a dominant role of molecular orientation as compared to crystallinity in controlling the charge transport. [ABSTRACT FROM AUTHOR]

Presented here is the design, synthesis, and study of a variety of novel hydrogen-bonding-capable π-conjugated N-heteroacenes, 1,4-dihydropyrazino[2,3-b]quinoxaline-2,3-diones (DPQDs). The DPQDs were accessed from the corresponding weakly hydrogen-bonding dicyanopyrazinoquinoxaline (DCPQ) suspensions with excess potassium hydroxide, resulting in moderate to good yields. Both families of compounds were analyzed by UV–vis and NMR spectroscopy, where the consequences of hydrogen bonding capability could be assessed through the structure–property studies. Conversion of the DCPQs into hydrogen-bonding capable DPQDs results in modulation of frontier MO energies, higher molar extinction coefficients, enhanced crystallinity, and on-average higher thermal stability (where in some cases the 5% weight loss temperature is increased by up to 100 °C). Single crystal X-ray diffraction data could be obtained for three DPQDs. One reveals pairwise hydrogen bonding in the solid state as well as a herringbone packing arrangement rendering it a promising candidate for additional studies in the context of organic optoelectronic devices.

Gas detection is crucial for detecting environmentally harmful gases. Organic field-effect transistor (OFET)-based gas sensors have attracted attention due to their promising performance and potential for integration into flexible and wearable devices. This review examines the operating mechanisms of OFET-based gas sensors and explores methods for improving sensitivity, with a focus on porous structures. Researchers have achieved significant enhancements in sensor performance by controlling the thickness and free volume of the organic semiconductor layer. Additionally, innovative fabrication techniques like self-assembly and etching have been used to create porous structures, facilitating the diffusion of target gas molecules, and improving sensor response and recovery. These advancements in porous structure fabrication suggest a promising future for OFET-based gas sensors, offering increased sensitivity and selectivity across various applications. [ABSTRACT FROM AUTHOR]

In state‐of‐the‐art organic transistors, the transit frequency fT is reported to be fT = 40 MHz for vertical organic transistors, where a voltage‐normalized fT corresponds to 0.36 MHz V−2. The reported highest fT for conventional organic transistors is fT = 160 MHz, where the voltage‐normalized fT is 0.1 MHz V−2. While the reported transit frequency fT of n‐MOSFETs for silicon technology when normalized by the applied biases exceeds 300 GHz V−2. The reported carrier mobility of organic semiconductors is over 100 cm2 V−1 s−1, which is almost an order of magnitude lower than that of silicon. However, the transit frequency fT of organic transistors lags far behind silicon technology by about six orders of magnitude at a comparable device length below 300 nm. In this work, a technology computer‐aided design (TCAD) simulator is adjusted to the experimental DC and AC characteristics of the 200 nm device length vertical organic permeable‐base transistors (OPBTs) based on C60 as semiconductor. The AC performance of the devices is investigated and quantitatively analyzed the influence and contribution of key design, structure and material parameters that determine fT and fmax. The feasible ways to enhance and optimize the highest achievable fT and fmax are identified to reach the GHz−range$\rm GHz-range$ and overcome the limitations to high‐frequency operation in organic transistors. [ABSTRACT FROM AUTHOR]

In this study, organic field-effect transistors (OFETs) were fabricated using plasticized poly(methyl methacrylate) (PMMA) as the gate dielectric and copper phthalocyanine (CuPc) as the active layer. Propylene carbonate (PC) was used as a plasticizer material. The dielectric properties of the plasticized PMMA were investigated in detail and the OFET parameters were examined. The effective capacitance (Ci) of plasticized PMMA was measured as ~ 500 nF cm−2 (at 100 Hz), which is almost 70 times higher than that of pure PMMA. This increase in effective capacitance led to significant improvements in various key parameters of the fabricated OFETs. High hole field-effect mobility values (0.81 cm2 V−1 s−1), low threshold voltages (~ ±0.1 V), and low operating voltages (0 to ±0.8 V) were achieved by using the plasticized PMMA dielectric. The temperature dependence of the fabricated OFETs was also investigated, and the activation energy of CuPc was estimated as 29.3 meV. The plasticized OFETs demonstrated excellent stability over 3600 measurement cycles carried out in an ambient atmosphere. This demonstrated stability of the fabricated OFETs reinforces the practical feasibility of this material combination strategy, positioning it as a key advancement in the field of solution-processable gate dielectrics. [ABSTRACT FROM AUTHOR]

Continuous glucose monitoring systems (CGMs) are critical toward closed-loop diabetes management. The field's progress urges next-generation CGMs with enhanced antinoise ability, reliability, and wearability. Here, we propose a coin-sized, fully integrated, and wearable CGM, achieved by holistically synergizing state-of-the-art interdisciplinary technologies of biosensors, minimally invasive tools, and hydrogels. The proposed CGM consists of three major parts: (i) an emerging biochemical signal amplifier, the organic electrochemical transistor (OECT), improving the signal-to-noise ratio (SNR) beyond traditional electrochemical sensors; (ii) a microneedle array to facilitate subcutaneous glucose sampling with minimized pain; and (iii) a soft hydrogel to stabilize the skin-device interface. Compared to conventional CGMs, the OECT-CGM offers a high antinoise ability, tunable sensitivity and resolution, and comfort wearability, enabling personalized glucose sensing for future precision diabetes health care. Last, we discuss how OECT technology can help push the limit of detection of current wearable electrochemical biosensors, especially when operating in complicated conditions. [ABSTRACT FROM AUTHOR]

Since the first applications of nanohoops in organic electronics appear promising, the time has come to go deeper into their rational design in order to reach high‐efficiency materials. To do so, systematic studies dealing with the incorporation of electron‐rich and/or electron‐poor functional units on nanohoops have to be performed. Herein, the synthesis, the electrochemical, photophysical, thermal, and structural properties of two [4]cyclo‐2,7‐carbazoles, [4]C‐Py‐Cbz, and [4]C‐Pm‐Cbz, possessing electron‐withdrawing units on their nitrogen atoms (pyridine or pyrimidine) are reported. The synthesis of these nanohoops is first optimized and a high yield above 50% is reached. Through a structure‐properties relationship study, it is shown that the substituent has a significant impact on some physicochemical properties (eg HOMO/LUMO levels) while others are kept unchanged (eg fluorescence). Incorporation in electronic devices shows that the most electrically efficient Organic Field‐Effect transistors are obtained with [4]C‐Py‐Cbz although this compound does not present the best‐organized semiconductor layer. These experimental data are finally confronted with the electronic couplings between the nanohoops determined at the DFT level and have highlighted the origin in the difference of charge transport properties. [4]C‐Py‐Cbz has the advantage of a more 2D‐like transport character than [4]C‐Pm‐Cbz, which alleviates the impact of defects and structural organization. [ABSTRACT FROM AUTHOR]

Leveraging poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)] as the dielectric, we fabricated organic ferroelectric field-effect transistors (OFe-FETs). These devices demonstrate quasi-static transfer characteristics that include a hysteresis window alongside transient phenomena that bear resemblance to synaptic plasticity-encapsulating excitatory postsynaptic current (EPSC) as well as both short-term and long-term potentiation (STP/LTP). We also explore and elucidate other aspects such as the subthreshold swing and the hysteresis window under dynamic state by varying the pace of voltage sweeps. In addition, we developed an analytical model that describes the electrical properties of OFe-FETs, which melds an empirical formula for ferroelectric polarization with a compact model. This model agrees well with the experimental data concerning quasi-static transfer characteristics, potentially serving as a quantitative tool to improve the understanding and design of OFe-FETs. [ABSTRACT FROM AUTHOR]

Organic electrochemical transistors appear as an alternative for relatively low-cost, easy-to-operate biosensors due to their intrinsic amplification. Herein, we present the fabrication, characterization, and validation of an immuno-detection system based on commercial sensors using gold electrodes where no additional surface treatment is performed on the gate electrode. The steady-state response of these sensors has been studied by analyzing different semiconductor organic channels in order to optimize the biomolecular detection process and its the application to monitoring human IgG levels due to SARS-CoV-2 infections. Detection levels of up to tens of μ g mL − 1 with sensitivities up to 13.75% [ μ g / mL ]−1, concentration ranges of medical relevance in seroprevalence studies, have been achieved. [ABSTRACT FROM AUTHOR]

Von Neumann architecture-based computing, while widely successful in personal computers and embedded systems, faces inherent challenges including the von Neumann bottleneck, particularly amidst the ongoing surge of data-intensive tasks. Neuromorphic computing, designed to integrate arithmetic, logic, and memory operations, has emerged as a promising solution for improving energy efficiency and performance. This approach requires the construction of an artificial synaptic device that can simultaneously perform signal processing, learning, and memory operations. We present a photo-synaptic device with 32 analog multi-states by exploiting field-effect transistors based on the lateral heterostructures of two-dimensional (2D) WS2 and MoS2 monolayers, formed through a two-step metal–organic chemical vapor deposition process. These lateral heterostructures offer high photoresponsivity and enhanced efficiency of charge trapping at the interface between the heterostructures and SiO2 due to the presence of the WS2 monolayer with large trap densities. As a result, it enables the photo-synaptic transistor to implement synaptic behaviors of long-term plasticity and high recognition accuracy. To confirm the feasibility of the photo-synapse, we investigated its synaptic characteristics under optical and electrical stimuli, including the retention of excitatory post-synaptic currents, potentiation, habituation, nonlinearity factor, and paired-pulse facilitation. Our findings suggest the potential of versatile 2D material-synapse with a high density of device integration. [ABSTRACT FROM AUTHOR]

The voltage-gated ion channels, also known as ionic transistors, play substantial roles in biological systems and ion-ion selective separation. However, implementing the ultrafast switchable capabilities and polarity switching of ionic transistors remains a challenge. Here, we report a nanofluidic ionic transistor based on carbon nanotubes, which exhibits an on/off ratio of 104 at operational gate voltage as low as 1 V. By controlling the morphology of carbon nanotubes, both unipolar and ambipolar ionic transistors are realized, and their on/off ratio can be further improved by introducing an Al2O3 dielectric layer. Meanwhile, this ionic transistor enables the polarity switching between p-type and n-type by controlled surface properties of carbon nanotubes. The implementation of constructing ionic circuits based on ionic transistors is demonstrated, which enables the creation of NOT, NAND, and NOR logic gates. The ionic transistors are expected to have profound implications for low-energy consumption computing devices and brain-machine interfacing. [ABSTRACT FROM AUTHOR]

Organic semiconductors (OSCs), especially small molecule semiconductors, have received increasing attention due to their good designability and variability. Phase transitions and interfacial properties have a decisive influence on device performance. Here, 2-Dodecyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12) devices are treated with low-power laser annealing, which is able to avoid the influence of the dewetting effect on the hole mobility of organic semiconductor materials. Ultraviolet ozone treatment and self-assembled monolayer treatment can improve the performance and stability of the device. Moreover, after low-temperature thermal annealing, the hole mobility of the device can even reach as high as 4.80 cm2 V−1 s−1, and we tested the optical response of the device to the ultraviolet wavelength and found that its maximum optical responsivity was 8.2 AW−1. [ABSTRACT FROM AUTHOR]

This work presents a series of novel quinoidal organic semiconductors based on diselenophene‐dithioalkylthiophene (DSpDST) conjugated cores with various side‐chain lengths (‐thiohexyl, ‐thiodecyl, and ‐thiotetradecyl, designated DSpDSTQ‐6, DSpDSTQ‐10, and DSpDSTQ‐14, respectively). The purpose of this research is to develop solution‐processable organic semiconductors using dicyanomethylene end‐capped organic small molecules for organic field effect transistors (OFETs) application. The physical, electrochemical, and electrical properties of these new DSpDSTQs are systematically studied, along with their performance in OFETs and thin film morphologies. Additionally, the molecular structures of DSpDSTQ are determined through density functional theory (DFT) calculations and single‐crystal X‐ray diffraction analysis. The results reveal the presence of intramolecular S (alkyl)···Se (selenophene) interactions, which result in a planar SR‐containing DSpDSTQ core, thereby promoting extended π‐orbital interactions and efficient charge transport in the OFETs. Moreover, the influence of thioalkyl side chain length on surface morphologies and microstructures is investigated. Remarkably, the compound with the shortest thioalkyl chain, DSpDSTQ‐6, demonstrates ambipolar carrier transport with the highest electron and hole mobilities of 0.334 and 0.463 cm2 V−1 s−1, respectively. These findings highlight the excellence of ambipolar characteristics of solution‐processable OFETs based on DSpDSTQs even under ambient conditions. [ABSTRACT FROM AUTHOR]

Gas sensors based on ambipolar carbon nanotube (CNT) field-effect transistors with various amounts of CNTs were fabricated by dielectrophoretic assembly. The nitrogen dioxide (NO2) gas response and recovery properties of the transistors were measured to investigate the effect of CNT amount on gas response. For the device with a small amount of CNTs, responses from the CNT bulk and CNT/electrode contacts were observed. For devices with a large amount of CNTs, in which a network-like structure of CNTs was observed near the electrodes, an increased current in both electron and hole conduction regions was observed compared with that for the device with a small amount of CNTs. The increased current in the electron conduction region rapidly decreased during recovery. This response is consistent with that of CNT/CNT X-type contacts, which have a high resistance before NO2 adsorption. Equivalent circuits of CNT channels with CNT/CNT contacts were developed, allowing the transistor behavior to be qualitatively discussed. Evaluation of time constants revealed that CNT/electrode contacts and CNT/CNT X-type contacts exhibited high NO2 adsorption and desorption rates, respectively. [ABSTRACT FROM AUTHOR]

Extended π-conjugation with backbone-planarity-driven π-π stacking dominates charge transport in semiconducting polymers (SCPs). The roles of SCP film morphology and macromolecular conformation concerning the substrate in influencing charge transport and its impact on device performance have been a subject of extensive debate. Face-on SCPs promote out-of-plane charge transport primarily through π-π stacking, with conjugated polymeric chains assisting transport in connecting crystalline domains, whereas edge-on SCPs promote in-plane charge transport primarily through conjugation and π-π stacking. In this work, we fabricated three different types of devices, namely, organic field effect transistors, organic Schottky diodes, and organic bistable memristors, as representatives of planar and vertical devices. We demonstrate that a planar device, i.e., an organic field effect transistor, performs well in an edge-on conformation exhibiting a field-effect mobility of 0.12 cm2V−1s−1 and on/off ratio >104, whereas vertical devices, i.e., organic Schottky diodes and organic memristors, perform well in a face-on conformation, exhibiting exceptionally high on/off ratios of ~107 and 106, respectively. [ABSTRACT FROM AUTHOR]