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Converting transverse photons into longitudinal two-dimensional plasmon-–polaritons (2D-PP) and vice versa presents a significant challenge within the fields of photonics and plasmonics. Therefore, understanding the mechanism which increases the photon – 2D-PP conversion efficiency could significantly contribute to those efforts. In this study, we theoretically examine how efficiently incident radiation, when scattered by a silver spherical nanoparticle (Ag-NP), can be transformed into 2D-PP within van der Waals (vdW) heterostructures composed of hexagonal boron nitride and graphene (hBN/Gr composites). We show that the Dirac plasmon (DP) excitation efficiency depends on the Ag-NP radius as R3, and decreases exponentially with Ag-NP height h, so that for a certain Ag-NP geometry up to 25 % of the incident electrical field is channeled into the DP. We demonstrate that the linear plasmons (LPs) excitation efficiency can be manipulated by changing the graphene–graphene distance Δ (or hBN thickness) or by changing the number of graphene layers N. By increasing Δ and/or N the LPs move towards smaller wave vectors Q and become accessible by the Ag-NP dipole field, so that for N ≥ 5 the excitation of more than one LP is possible. These results are supported by recent scattering-type scanning near-field optical microscopy (s-SNOM) measurements. Furthermore, we show that Ag-NPs with specific parameters preferentially hybridizes with DPs of a particular wavelength λD, facilitating selective excitation of DPs. The obtained tuning possibilities could have a significant impact on applied plasmonics, photonics or optoelectronics. [ABSTRACT FROM AUTHOR]

In this work, a self-lubricating composite was manufactured using a novel hybrid 3D printing/in situ spraying process that involved the printing of an acrylonitrile butadiene styrene (ABS) matrix using fused deposition modeling (FDM), along with the in situ spraying of alumina (Al2O3) and hexagonal boron nitride (hBN) reinforcements during 3D printing. The results revealed that the addition of the reinforcement induced an extensive formation of micropores throughout the ABS structure. Under tensile-loading conditions, the mechanical strength and cohesive interlayer bonding of the composites were diminished due to the presence of these micropores. However, under tribological conditions, the presence of the Al2O3 and hBN reinforcement improved the frictional resistance of ABS in extreme loading conditions. This improvement in frictional resistance was attributed to the ability of the Al2O3 reinforcement to support the external tribo-load and the shearing-like ability of hBN reinforcement during sliding. Collectively, this work provides novel insights into the possibility of designing tribologically robust ABS components through the addition of in situ-sprayed ceramic and solid-lubricant reinforcements. [ABSTRACT FROM AUTHOR]

Large-scale synthesis of hexagonal boron nitride (hBN) by a liquid exfoliation technique has been demonstrated in the present study. It is a low-cost and efficient method for exfoliating 2D materials like hBN. Here, a two-step approach was acquired to exfoliate the bulk hBN. In the first step, the bulk hBN was dispersed using a probe sonicator in a solution of gelatin, potassium chloride (KCl) and zinc chloride (ZnCl2), and in the second step, further exfoliation was achieved by centrifugation process. Exfoliation was achieved by both centrifugation and intercalation of Zn2+ and K+ ions within the layers of hBN. The supernatant obtained after centrifugation was heated to 600 °C for a duration of 1 h in an air atmosphere to eliminate the gelatin which was again heat treated for the same duration at 800 °C in an Ar atmosphere to improve its crystallinity. The hBN nanoplatelets obtained from the bulk hBN were characterized using various analytical techniques such as x-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), differential scanning calorimetry and thermogravimetric analysis (DSC/TGA) and atomic force microscopy (AFM) to determine their properties. The hBN nanoplatelets showed a thickness range of ~ 50-270 nm and a lateral dimension range of ~ 1-3 μm. FTIR analysis confirmed the presence of hydroxyl (OH) functional group attached to the hBN nanoplatelets due to the absorption of surface moisture. The hBN nanoplatelets showed excellent thermal stability up to a temperature of ~ 726.16 °C. The liquid exfoliation approach used in the present work was found to be a highly effective method and shows potential for producing hBN nanoplatelets with a few layers. [ABSTRACT FROM AUTHOR]

Titanium alloy is an essential material for preparing aerospace engines because of its excellent performance. However, the poor wear resistance of titanium alloy restricts its further development as a critical engine material. This study aimed to use laser cladding and particle enhancement technologies to enhance the surface wear resistance of titanium alloy. (NiCoCr) 94 Al 3 Ti 3 +hBN, (NiCoCr) 94 Al 3 Ti 3 +cBN, and (NiCoCr) 94 Al 3 Ti 3 +hBN + cBN were prepared on the surface of titanium alloy, and the wear resistance mechanism of single-phase self-lubricating particles, single-phase hard particles, and self-lubricating and hard biphasic particles was investigated. The results showed that the microhardness of the biphase-reinforced coating was 1083.8 HV0.5, which was higher than that of the self-lubricating particle-reinforced coating and hard-particle-reinforced coating by 368.4 HV0.5 and 149.8 HV0.5, respectively. The friction coefficient of the biphase-reinforced coating was 0.4208, which was lower than that of the self-lubricating particle-reinforced coating and hard-particle-reinforced coating by 0.0224 and 0.0686, respectively. The wear rate of the biphase-reinforced coating was 0.076 mm3/NM, and the wear resistance of the biphase-reinforced coating was 3.42 and 1.37 times that of the self-lubricating particle-reinforced coating and hard-particle-reinforced coating, respectively. hBN relied on its own decomposition to promote the coating to present a layered unstable structure to achieve a wear reduction effect, cBN relied on its own hardness to resist wear and played a wear-resistant role, whereas biphase-reinforced coating had a hard wear resistance and formed a lubricating film to enhance the wear resistance of the coating. The comprehensive performance of the dual-phase wear-resistant coating reinforced by hard particles and self-lubricating particles was better than that of single-phase wear-resistant coating, providing a reference for developing wear-resistant coating integrating hardness and self-lubrication. [ABSTRACT FROM AUTHOR]

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics. [ABSTRACT FROM AUTHOR]

While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N2 gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential. [ABSTRACT FROM AUTHOR]

Abstract Valley Hall effect is observed in asymmetric single‐layer and bilayer graphene systems. In single‐layer graphene systems, asymmetry is introduced by aligning graphene with hexagonal boron nitride (hBN) with a near‐zero twist angle, breaking the sub‐lattice symmetry. Although a similar approach is used in bilayer graphene to break the layer symmetry and thereby observe the valley Hall effect, the bilayer graphene is sandwiched with hBN on both sides in those studies. This study looks at a much simpler, non‐encapsulated structure where hBN is present only at the top of graphene. The crystallographic axes of both hBN and bilayer graphene are aligned. A clear signature of the valley Hall effect through non‐local resistance measurement (RNL) is observed. The observed non‐local resistance can be manipulated by applying a displacement field across the heterostructure. Furthermore, the electronic band structure and Berry curvature calculations validate the experimental observations.

Abstract While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N2 gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential.

Hexagonal boron nitride (hBN) with excellent self-lubrication performance is expected to relieve the friction resistance and wear of NiCr–Cr 3 C 2 coatings. However, the poor wettability of hBN with most materials makes it difficult to fabricate NiCr–Cr 3 C 2 -hBN composite coating with good cohesion strength. In this study, hBN was firstly pretreated through magnetron-sputtering aided Ni plating to form hBN@Ni particles. Then, NiCr–Cr 3 C 2 -hBN@Ni powder was prepared by spray granulation. Next, corresponding coatings were prepared through supersonic atmosphere plasma spraying. It was found that in comparison with NiCr–Cr 3 C 2 -hBN coating, the NiCr–Cr 3 C 2 -hBN@Ni coating exhibited a decreased porosity (from 3.6% to 0.3%), elevated cohesion (from 52.78 N to 62.11 N), and the wear rate decreased by an order of magnitude. It was concluded that hBN@Ni can effectively improve the component interface inside powder, enhance the cohesion of molten in-flight particles, and make the internal structure of the coating denser. [ABSTRACT FROM AUTHOR]

In this work, a self-lubricating composite was manufactured using a novel hybrid 3D printing/in situ spraying process that involved the printing of an acrylonitrile butadiene styrene (ABS) matrix using fused deposition modeling (FDM), along with the in situ spraying of alumina (Al2O3) and hexagonal boron nitride (hBN) reinforcements during 3D printing. The results revealed that the addition of the reinforcement induced an extensive formation of micropores throughout the ABS structure. Under tensile-loading conditions, the mechanical strength and cohesive interlayer bonding of the composites were diminished due to the presence of these micropores. However, under tribological conditions, the presence of the Al2O3 and hBN reinforcement improved the frictional resistance of ABS in extreme loading conditions. This improvement in frictional resistance was attributed to the ability of the Al2O3 reinforcement to support the external tribo-load and the shearing-like ability of hBN reinforcement during sliding. Collectively, this work provides novel insights into the possibility of designing tribologically robust ABS components through the addition of in situ-sprayed ceramic and solid-lubricant reinforcements.

Emergent heat transfer and thermal management applications require polymer composites with enhanced thermal conductivity (κ). Composites filled with non-spherical fillers, such as hexagonal boron nitride (hBN) and Graphite (Gr), suffer from processing-induced filler orientations, resulting in anisotropic κ, commonly low in the through-plane direction. Here, the effects of extrusion and compression molding-induced orientations on κ of hBN- and Gr-filled polyethylene composites were investigated. The effect of extrusion on the hBN orientation was studied using dies of various shapes. The shaped extrudates exhibited hBN orientations parallel to the extrusion flow direction, which prompted additional hBN orientation during compression molding. κ of the composites produced with shaped extrudates varied from 0.95 to 1.67 W m−1 K−1. Pelletizing and crushing the extrudates improved κ, by exploiting and eliminating the effect of extrusion-induced hBN orientations. Gr-filled composites showed better κ than hBN composites due to the higher intrinsic conductivity and bigger particle sizes. A maximum κ of 5.1 and 11.8 W m−1 K−1 was achieved in composites with oriented hBN and Gr through a thin rectangular die and stacking the sheets to fabricate composites with highly oriented fillers. [ABSTRACT FROM AUTHOR]

The aim of this research was to analyze the effect of inorganic additives on the tribological properties of the high-density polyethylene (HDPE) matrix composite surface. Titanium (Ti) and hexagonal boron nitride (hBN) were added in different mass fractions. The samples were produced by pressing a pre-prepared mixture of granules. The composite samples with the following mass fractions of additives were fabricated: 5% hBN, 10% hBN, 28% Ti–2% hBN, 23% Ti–7% hBN, and 20% Ti–10% hBN. An even distribution of individual additives' concentrations was confirmed. Observations of morphology, surface topography, hardness, and tribological measurements were conducted using reciprocating motion tests with the "pin-on-flat" and rotational tests with the "pin-on-disc" configuration. Subsequently, microscopic observations and measurements of the wear track profile were carried out. Additionally, geometry parameters of the contacting elastic body were calculated for various counter-samples. It was found that the Shore D hardness of samples containing Ti and hBN increased with the Ti content, while the coefficient of friction (COF) value decreased. The addition of hBN alone did not significantly affect the hardness, regardless of the ratio, while the COF increased with the increasing hBN content. The COF value doubled with the addition of 10% hBN (COF = 0.22), whereas the addition of 90% Ti–10% hBN resulted in a decrease in the COF value, to COF = 0.83. The highest hardness value was obtained for the sample containing 28% Ti–2% hBN (66.5), while the lowest was for the sample containing 10% hBN (63.2). The wear track analysis, including its height and width caused by deformation, was detected using a focal differentiation microscope and scanning electron microscopy. Additionally, EDS maps were generated to determine the wear characteristics of the composite. [ABSTRACT FROM AUTHOR]

Membranes that selectively filter for both anions and cations are central to technological applications from clean energy generation to desalination devices. 2D materials have immense potential as these ion-selective membranes due to their thinness, mechanical strength, and tunable surface chemistry; however, currently, only cation-selective membranes have been reported. Here we demonstrate the controllable cation and anion selectivity of both monolayer graphene and hexagonal boron nitride. In particular, we measure the ionic current through membranes grown by chemical vapor deposition containing well-known defects inherent to scalably produced and wet-transferred 2D materials. We observe a striking change from cation selectivity with monovalent ions to anion selectivity by controlling the concentration of multivalent ions and inducing charge inversion on the 2D membrane. Furthermore, we find good agreement between our experimental data and theoretical predictions from the Goldman-Hodgkin-Katz equation and use this model to extract selectivity ratios. These tunable selective membranes conduct up to 500 anions for each cation and thus show potential for osmotic power generation.

Phonon-polaritons (PhPs) in layered crystals, including hexagonal boron nitride (hBN), have been investigated by combined scattering-type scanning near-field optical microscopy (s-SNOM) and Fourier transform infrared (FTIR) spectroscopy. Nevertheless, many of such s-SNOM-based FTIR spectra features remain unexplored, especially those originated from the impact of boundaries. Here we observe real-space PhP propagations in thin-layer hBN sheets either supported or suspended by s-SNOM imaging. Then with a high-power broadband IR laser source, we identify two major peaks and multiple auxiliary peaks in the near-field amplitude spectra, obtained using scattering-type near-field FTIR spectroscopy, from both supported and suspended hBN. The major PhP propagation interference peak moves toward the major in-plane phonon peak when the IR illumination moves away from the hBN edge. Specific differences between the auxiliary peaks in the near-field amplitude spectra from supported and suspended hBN sheets are investigated regarding different boundary conditions, associated with edges and substrate interfaces. The outcomes may be explored in heterostructures for advanced nanophotonic applications.

A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF 2D switches fabricated with hBN are described here by a equivalent circuit models. Straightforward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state, i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism. The highest mean relative error obtained between modeling and measurements of the return loss is of 7.6% with the approach presented here which overcomes the 42.5% of difference obtained with a previous model with an incomplete intrinsic device description.

An efficient single-photon emitter (SPE) should emit photons at a high rate into a well-defined spatio-temporal mode along with an accessible numerical aperture (NA) to increase the light extraction efficiency that is required for effective coupling into optical waveguides. Based on a previously developed experimental approach to fabricate hybrid Fabry–Perot microcavities (Ortiz-Huerta et al. Opt. Express 2018, 26, 33245), we managed to find analytical and finite-difference time-domain (FDTD) values for the, experimentally achievable, geometrical parameters of a hybrid plano-concave microcavity that enhances the spontaneous emission (i.e., Purcell enhancement) of color centers in two-dimensional (2D) hexagonal boron nitride (hBN) while simultaneously limiting the NA of the emitter. Paraxial approximation and a transfer matrix model are used to find the spotsize of the fundamental Gaussian mode and the resonant modes of our microcavity, respectively. A Purcell enhancement of 6 is found for a SPE (i.e., in-plane dipole) hosted by a 2D hBN layer inside the hybrid plano-concave microcavity.

Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN's bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions. [ABSTRACT FROM AUTHOR]

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

Boron vacancy centre ( $V_\textrm{B}^-$ ) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_\textrm{B}^-$ creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particles, which offers scalability through the potential for creating ensembles in large volumes of material. Here we systematically investigate the effect of electron irradiation by varying the dose delivered to a range of hBN samples, which differ in their purity, and search for an optimum in measurement sensitivity. We find that moderate electron irradiation doses ( ${\approx}\,5\times 10^{18}$ cm ^−2 ) appear to offer the best sensitivity, and also observe a dependence on the initial crystal purity. These results pave the way for the scalable and cost-effective production of hBN quantum sensors, and provide insight into the mechanisms limiting $V_\textrm{B}^-$ spin properties.

The field-effect control of the electrical and optical properties of two-dimensional (2D) van der Waals semiconductors (vdW) is one important aspect of this novel class of materials. Thanks to their reduced thickness and decreased screening, electric fields can easily penetrate in a 2D semiconductor and thus modulate their charge density and their properties. In literature, the field effect is routinely used to fabricate atomically thin field-effect transistors based on 2D semiconductors. Apart from the tuning of the electrical transport, it has been demonstrated that the field effect can also be used to modulate the excitonic optical emission of 2D transition metal dichalcogenides such as MoS2 or WSe2. In this paper, we present some recent experiments on the field-effect control of the optical and excitonic properties of the monolayer WS2. Using the deterministic transfer of van der Waals materials, we fabricate planar single-layer WS2 devices contacted by a gold electrode and partially sandwiched between two insulating hexagonal boron nitride (hBN) flakes. Thanks to the planar nature of the device, we can optically access both the hBN encapsulated and the unencapsulated WS2 regions and compare the field-effect control of the exciton population in the two cases. We find that the encapsulation strongly increases the range of tunability of the optical emission of WS2, allowing us to tune the photoluminescence emission from excitons-dominated to trions-dominated. We also discuss how the full encapsulation of WS2 with hBN helps reduce spurious hysteretic effects in the field-effect control of the optical properties, similar to what has been reported for 2D vdW field-effect transistors. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride (hBN), a promising 2D nanomaterial, has potential applications in desalination and osmotic energy harvesting. In all these applications, surface roughness significantly impacts fluid flow in nanomaterial, but its precise effect remains unclear. This creates a knowledge gap in understanding how surface roughness influences water flow at the water-hBN interface, which hinders the development of accurate molecular dynamics (MD) simulations. Here, we address this gap by employing density functional theory (DFT) to calculate atomic charges on rough hBN surfaces. These charges are incorporated into MD simulations, revealing a strong influence on the water-hBN interface. This combined approach accurately predicts experimental water slip length. We further quantify the water flow behavior on hBN using established force fields. Incorporating surface roughness into the model yields results in close agreement with the experimental slip length of ∼ 1 nm for water using FF-2 force fields, validating the simulation approach. Our findings highlight the importance of incorporating realistic surface roughness and force field models in MD simulations of water-nanomaterial interfaces. This work underscores the critical role of accurate 2D material models for understanding fluid flow in nanofluidic applications. [Display omitted] • Surface roughness accurately predicts water slip length (∼ 1 nm) on hBN. • Surface roughness increases friction and reduces slip length on hBN. • Potential to tailor slip length by manipulating roughness. • Close agreement with the experimental slip length of ∼ 1 nm using FF-2 force fields. • Study enhances understanding of nanoscale friction at water-hBN interfaces. [ABSTRACT FROM AUTHOR]

Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quantum Hall effect and composite-fermion fractional quantum Hall effect due to its unique massless Dirac fermions and ultra-high carrier mobility. Here, we use a monolayer graphene encapsulated with hexagonal boron nitride and few-layer graphite to fabricate micrometer-scale graphene Hall devices. The application of a graphite gate electrode significantly screens the phonon scattering from a conventional SiO2/Si substrate, and thus enhances the carrier mobility of graphene. At a low temperature, the carrier mobility of graphene devices can reach 3 × 105 cm2/V·s, and at room temperature, the carrier mobility can still exceed 1 × 105 cm2/V·s, which is very helpful for the development of high-temperature quantum Hall effects under moderate magnetic fields. At a low temperature of 1.6 K, a series of half-integer quantum Hall plateaus are well-observed in graphene with a magnetic field of 1 T. More importantly, the ν = ±2 quantum Hall plateau clearly persists up to 150 K with only a few-tesla magnetic field. These findings show that graphite-gated high-mobility graphene devices hold great potential for high-sensitivity Hall sensors and resistance metrology standards for the new Système International d'unités. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) hexagonal boron nitride (hBN), due to its extraordinary thermal, chemical, and optical properties, has arisen as an enticing material for the research community to explore for various applications, including the use of site defects in hBN as single photon emitters (SPEs). In this review, we systematically summarize recent advanced strategies towards the controllable synthesis of 2D hBN using chemical vapor deposition, towards a full control of the domain size, orientation, morphology, layer number, and stacking order, etc. Moreover, we review the underlying mechanisms for single photon emission (SPE) in hBN and methods to selectively generate and tune the SPEs. Defects (e.g., carbon substituted defects) are discussed for the potential use as emission sites. We finally give an outlook of future challenges and opportunities on desirable hBN synthesis and further investigation of SPEs in hBN, targeting to utilize hBN as single photon emitters in an industrial scale.

Emergent heat transfer and thermal management applications require polymer composites with enhanced thermal conductivity (κ). Composites filled with non-spherical fillers, such as hexagonal boron nitride (hBN) and Graphite (Gr), suffer from processing-induced filler orientations, resulting in anisotropic κ, commonly low in the through-plane direction. Here, the effects of extrusion and compression molding-induced orientations on κ of hBN- and Gr-filled polyethylene composites were investigated. The effect of extrusion on the hBN orientation was studied using dies of various shapes. The shaped extrudates exhibited hBN orientations parallel to the extrusion flow direction, which prompted additional hBN orientation during compression molding. κ of the composites produced with shaped extrudates varied from 0.95 to 1.67 W m−1 K−1. Pelletizing and crushing the extrudates improved κ, by exploiting and eliminating the effect of extrusion-induced hBN orientations. Gr-filled composites showed better κ than hBN composites due to the higher intrinsic conductivity and bigger particle sizes. A maximum κ of 5.1 and 11.8 W m−1 K−1 was achieved in composites with oriented hBN and Gr through a thin rectangular die and stacking the sheets to fabricate composites with highly oriented fillers.

The aim of this research was to analyze the effect of inorganic additives on the tribological properties of the high-density polyethylene (HDPE) matrix composite surface. Titanium (Ti) and hexagonal boron nitride (hBN) were added in different mass fractions. The samples were produced by pressing a pre-prepared mixture of granules. The composite samples with the following mass fractions of additives were fabricated: 5% hBN, 10% hBN, 28% Ti–2% hBN, 23% Ti–7% hBN, and 20% Ti–10% hBN. An even distribution of individual additives’ concentrations was confirmed. Observations of morphology, surface topography, hardness, and tribological measurements were conducted using reciprocating motion tests with the “pin-on-flat” and rotational tests with the “pin-on-disc” configuration. Subsequently, microscopic observations and measurements of the wear track profile were carried out. Additionally, geometry parameters of the contacting elastic body were calculated for various counter-samples. It was found that the Shore D hardness of samples containing Ti and hBN increased with the Ti content, while the coefficient of friction (COF) value decreased. The addition of hBN alone did not significantly affect the hardness, regardless of the ratio, while the COF increased with the increasing hBN content. The COF value doubled with the addition of 10% hBN (COF = 0.22), whereas the addition of 90% Ti–10% hBN resulted in a decrease in the COF value, to COF = 0.83. The highest hardness value was obtained for the sample containing 28% Ti–2% hBN (66.5), while the lowest was for the sample containing 10% hBN (63.2). The wear track analysis, including its height and width caused by deformation, was detected using a focal differentiation microscope and scanning electron microscopy. Additionally, EDS maps were generated to determine the wear characteristics of the composite.

van der Waals heterostructures based on graphene and hBN layers with different stacking modes are receiving considerable attention because of their potential application in fundamental physics. However, conventional exfoliation fabrication methods and layer‐by‐layer transfer techniques have various limitations. The CVD synthesis of high‐quality large‐area graphene and hBN multilayer heterostructures is essential for the advancement of new physics. Herein, the authors propose an in situ CVD growth strategy for synthesizing wafer‐scale AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures. Single‐crystal CuNi(111) alloys are prepared on sapphire, followed by the pre‐dissolution of carbon atoms. Single‐crystal monolayer hBN is synthesized on a plasma‐cleaned CuNi(111) surface. Then, a single‐crystal monolayer graphene is epitaxially grown onto the hBN surface to form graphene/hBN bilayer heterostructures. A controlled decrease in the growth temperature allows the carbon atoms to precipitate out of the CuNi(111) alloy to form single‐crystal graphene at the interface between hBN and CuNi(111), thereby producing graphene/hBN/graphene trilayer van der Waals heterostructures. The stacking modes between as‐grown 2D layers are investigated through Raman spectroscopy and transmission electron microscopy. This study provides an in situ CVD approach to directly synthesize large‐scale single‐crystal low‐dimensional van der Waals heterostructures and facilitates their application in future 2D‐material‐based integrated circuits. [ABSTRACT FROM AUTHOR]

We review the recent advance in the understanding of the optoelectronic properties of hexagonal boron nitride (hBN) in the deep ultraviolet. The comparison between bulk hBN and monolayer hBN highlights some of their major differences such the bandgap nature, the excitonic binding energy and the phonon-assisted broadening of the excitonic lines. Perspectives point out the relevance of addressing the regime of hBN samples made of a very few number of monolayers, including twisted hBN monolayers in the context of twistronics.

Abstract van der Waals heterostructures based on graphene and hBN layers with different stacking modes are receiving considerable attention because of their potential application in fundamental physics. However, conventional exfoliation fabrication methods and layer‐by‐layer transfer techniques have various limitations. The CVD synthesis of high‐quality large‐area graphene and hBN multilayer heterostructures is essential for the advancement of new physics. Herein, the authors propose an in situ CVD growth strategy for synthesizing wafer‐scale AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures. Single‐crystal CuNi(111) alloys are prepared on sapphire, followed by the pre‐dissolution of carbon atoms. Single‐crystal monolayer hBN is synthesized on a plasma‐cleaned CuNi(111) surface. Then, a single‐crystal monolayer graphene is epitaxially grown onto the hBN surface to form graphene/hBN bilayer heterostructures. A controlled decrease in the growth temperature allows the carbon atoms to precipitate out of the CuNi(111) alloy to form single‐crystal graphene at the interface between hBN and CuNi(111), thereby producing graphene/hBN/graphene trilayer van der Waals heterostructures. The stacking modes between as‐grown 2D layers are investigated through Raman spectroscopy and transmission electron microscopy. This study provides an in situ CVD approach to directly synthesize large‐scale single‐crystal low‐dimensional van der Waals heterostructures and facilitates their application in future 2D‐material‐based integrated circuits.

In this study, the relationship between machinability, mechanical properties and microstructure of hBN-SiC composites was investigated. Manufacturing of the composites started with the calcination of raw materials at 850 °C for 16 h under a nitrogen atmosphere prior to mixing with 5 wt% of Al 2 O 3 :Y 2 O 3 sintering additives and then powder mixtures were spark plasma sintered at 1850 °C for 17 min by applying 50 MPa pressure. Characterizations of the samples were carried out with FTIR, XRD, SEM and TEM methods. The physical and mechanical properties of the samples were determined with density measurement, Vickers hardness, Young's modulus, three-point bending, fracture toughness and drill test methods. The amount of in-situ formed hBN phase within the sintered composites was calculated by using the Rietveld method. The physical, mechanical and machinability properties of the composite were evaluated according to the calculated amount of hBN. The highest drilling speed during the test was obtained as 34.24 mm/min for the sample containing 29 wt% of hBN. Increasing the drill load from 19.61 N to 49.03 N resulted in 4.33 times increase in the drilling rate. TEM and STEM studies which were carried out for the microstructural investigations showed the internal defects as delamination bands within hBN phase formed during sintering. In addition to these analyses, novel precession electron diffraction method in TEM was utilized for orientation mapping to investigate any possible orientation relationship between SiC and in-situ synthesized hBN phase. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN’s bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions.

The field-effect control of the electrical and optical properties of two-dimensional (2D) van der Waals semiconductors (vdW) is one important aspect of this novel class of materials. Thanks to their reduced thickness and decreased screening, electric fields can easily penetrate in a 2D semiconductor and thus modulate their charge density and their properties. In literature, the field effect is routinely used to fabricate atomically thin field-effect transistors based on 2D semiconductors. Apart from the tuning of the electrical transport, it has been demonstrated that the field effect can also be used to modulate the excitonic optical emission of 2D transition metal dichalcogenides such as MoS2 or WSe2. In this paper, we present some recent experiments on the field-effect control of the optical and excitonic properties of the monolayer WS2. Using the deterministic transfer of van der Waals materials, we fabricate planar single-layer WS2 devices contacted by a gold electrode and partially sandwiched between two insulating hexagonal boron nitride (hBN) flakes. Thanks to the planar nature of the device, we can optically access both the hBN encapsulated and the unencapsulated WS2 regions and compare the field-effect control of the exciton population in the two cases. We find that the encapsulation strongly increases the range of tunability of the optical emission of WS2, allowing us to tune the photoluminescence emission from excitons-dominated to trions-dominated. We also discuss how the full encapsulation of WS2 with hBN helps reduce spurious hysteretic effects in the field-effect control of the optical properties, similar to what has been reported for 2D vdW field-effect transistors.

Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quantum Hall effect and composite-fermion fractional quantum Hall effect due to its unique massless Dirac fermions and ultra-high carrier mobility. Here, we use a monolayer graphene encapsulated with hexagonal boron nitride and few-layer graphite to fabricate micrometer-scale graphene Hall devices. The application of a graphite gate electrode significantly screens the phonon scattering from a conventional SiO2/Si substrate, and thus enhances the carrier mobility of graphene. At a low temperature, the carrier mobility of graphene devices can reach 3 × 105 cm2/V·s, and at room temperature, the carrier mobility can still exceed 1 × 105 cm2/V·s, which is very helpful for the development of high-temperature quantum Hall effects under moderate magnetic fields. At a low temperature of 1.6 K, a series of half-integer quantum Hall plateaus are well-observed in graphene with a magnetic field of 1 T. More importantly, the ν = ±2 quantum Hall plateau clearly persists up to 150 K with only a few-tesla magnetic field. These findings show that graphite-gated high-mobility graphene devices hold great potential for high-sensitivity Hall sensors and resistance metrology standards for the new Système International d’unités.

This research aimed to study the influence of different amounts of hBN additive on the mechanical properties and microstructure of TiB 2 -15 vol% SiC samples. All ceramics, containing 0, 3.5, and 7 vol% hBN, were sintered at 2000 °C using a hot-pressing route and reached their near full densities. Thanks to two different chemical reactions among the SiC reinforcement and the TiB 2 surface oxides (B 2 O 3 and TiO 2), the in-situ phases of SiO 2 and TiC were generated over the sintering process. The intergranular mode was identified as the predominant fracture type in all three composite samples. The hBN additive could contribute to grain refining of composites so that the sample containing 7 vol% hBN reached the finest microstructure. Finally, the highest Vickers hardness of 25.4 HV 0.5 kg and flexural strength of 776 MPa were attained for the TiB 2 –SiC and TiB 2 –SiC-7 vol% hBN samples, respectively. [ABSTRACT FROM AUTHOR]

• Graphene/hBN-based soft nano-fluids were used as a lubricant in this work. • Viscosity of prepared fluids were studied. • Cryogenic media has been used for cooling. Hexagonal Boron Nitride (hBN) is often referred to as a "soft" material due to its layered structure and properties that distinguish it from conventional hard materials like ceramics. The layered structure of hBN imparts lamellar lubrication characteristics and the weak van der Waals forces between adjacent layers allow for easy sliding, leading to low frictional resistance. The softness of hBN allows for ease of processing into various forms, facilitating its incorporation into lubricants, coatings, and composite materials. Therefore, the aim of this work is to enhance the lubricating capabilities of the nano-fluids and optimize the frictional behavior of Ti6Al4V alloy against tungsten carbide (WC) abrasive ball for potential biomedical applications, especially for combination of Ti6Al4V femoral stem and carbide femoral head. The newly formulated nano-fluids combine the unique properties of hBN and graphene to create a synergistic lubricating environment. The tribology and advanced characterization techniques were used to analyze the wear behavior of Ti6Al4V alloy surfaces. The results demonstrated that the applciaiton of cryogenically cooled lubricants with nanoparticles exhibited the lowest wear depth and friction forces, as a result of their increased viscosity. [ABSTRACT FROM AUTHOR]

Graphene and hBN as two-dimensional materials with excellent optical properties can be combined with other materials. In this paper, graphene and hBN is sequentially deposited on the surface of the silicon-core fiber to serve as transverse magnetic (TM) or transverse electric (TE) mode polarizer alternatively depending on the input wavelength and the diameter of the silicon-core. The Gr/hBN stack structure on the surface silicon-core microfiber is used not only for enlarging the wavelength bandwidth, such as from 350 nm (TM) and 670 nm (TE) for double Gr/hBN stack to 300 nm (TM) and 550 nm (TE) for single Gr/hBN stack, but also enhancing the light-graphene interaction to multiply the polarization extinction ratio, as compared with that of monolayer graphene. Small radius silicon core could provide large light-graphene interaction for flat extinction ratio with different thickness of the hBN.

Two-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must be accurately engineered for optimal operation. Here, we apply a transfer matrix-based source-term method to optimize light absorption and emission in 2D materials and related devices in weak and strong coupling regimes. The implemented analytical model accurately accounts for experimental results reported for representative 2D materials such as graphene and MoS2. The model has been extended to propose structures to optimize light emission by exciton recombination in MoS2 single layers, light extraction from arbitrarily oriented dipole monolayers, and single-photon emission in 2D materials. Also, it has been successfully applied to retrieve exciton-cavity interaction parameters from MoS2 microcavity experiments. The present model appears as a powerful and versatile tool for the design of new optoelectronic devices based on 2D semiconductors such as quantum light sources and polariton lasers.

Graphene and hBN as two-dimensional materials with excellent optical properties can be combined with other materials. In this paper, graphene and hBN is sequentially deposited on the surface of the silicon-core fiber to serve as transverse magnetic (TM) or transverse electric (TE) mode polarizer alternatively depending on the input wavelength and the diameter of the silicon-core. The Gr/hBN stack structure on the surface silicon-core microfiber is used not only for enlarging the wavelength bandwidth, such as from 350 nm (TM) and 670 nm (TE) for double Gr/hBN stack to 300 nm (TM) and 550 nm (TE) for single Gr/hBN stack, but also enhancing the light-graphene interaction to multiply the polarization extinction ratio, as compared with that of monolayer graphene. Small radius silicon core could provide large light-graphene interaction for flat extinction ratio with different thickness of the hBN. [ABSTRACT FROM AUTHOR]