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Metal oxide semiconductors (MOSs) hold great promise for electronic devices such as gas sensors. The utilization of ZnO as a conductometric gas sensor material can be traced back to its early stages; however, its application has primarily been limited to high-temperature environments. A gas sensor based on highly porous and interconnected 3D networks of ZnO tetrapod (ZnO-T) micro-nano structures was fabricated via an easy chemical vapor deposition (CVD) method. Homemade instruments were utilized to evaluate the gas-sensing of the sample at room temperature. It exhibited good gas-sensing at room temperature, particularly with a response of up to 338.80% toward 1600 ppm ethanol, while also demonstrating remarkable repeatability, stability, and selectivity. Moreover, the unique gas-sensing properties of ZnO-T at room temperature can be reasonably explained by considering the effect of van der Waals forces in physical adsorption and the synergistic effect of carrier concentration and mobility. The aforementioned statement presents an opportunity for the advancement of gas sensors utilizing ZnO at room temperature. [ABSTRACT FROM AUTHOR]

Metal oxide semiconductors (MOSs) hold great promise for electronic devices such as gas sensors. The utilization of ZnO as a conductometric gas sensor material can be traced back to its early stages; however, its application has primarily been limited to high-temperature environments. A gas sensor based on highly porous and interconnected 3D networks of ZnO tetrapod (ZnO-T) micro-nano structures was fabricated via an easy chemical vapor deposition (CVD) method. Homemade instruments were utilized to evaluate the gas-sensing of the sample at room temperature. It exhibited good gas-sensing at room temperature, particularly with a response of up to 338.80% toward 1600 ppm ethanol, while also demonstrating remarkable repeatability, stability, and selectivity. Moreover, the unique gas-sensing properties of ZnO-T at room temperature can be reasonably explained by considering the effect of van der Waals forces in physical adsorption and the synergistic effect of carrier concentration and mobility. The aforementioned statement presents an opportunity for the advancement of gas sensors utilizing ZnO at room temperature.

Metal oxide semiconductors (MOSs) hold great promise for electronic devices such as gas sensors. The utilization of ZnO as a conductometric gas sensor material can be traced back to its early stages; however, its application has primarily been limited to high-temperature environments. A gas sensor based on highly porous and interconnected 3D networks of ZnO tetrapod (ZnO-T) micro-nano structures was fabricated via an easy chemical vapor deposition (CVD) method. Homemade instruments were utilized to evaluate the gas-sensing of the sample at room temperature. It exhibited good gas-sensing at room temperature, particularly with a response of up to 338.80% toward 1600 ppm ethanol, while also demonstrating remarkable repeatability, stability, and selectivity. Moreover, the unique gas-sensing properties of ZnO-T at room temperature can be reasonably explained by considering the effect of van der Waals forces in physical adsorption and the synergistic effect of carrier concentration and mobility. The aforementioned statement presents an opportunity for the advancement of gas sensors utilizing ZnO at room temperature.