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Polarized light has promising applications in biological inspections, displays, and precise measurements. Direct emission of polarized light from a semiconductor device is highly desired in order to reduce the size and energy-consumption of the whole system. In this study, we demonstrate a semipolar GaN-based microcavity light-emitting diode (MCLED) that could simultaneously produce green light with perpendicular and parallel polarizations to the c*-axis. Orthogonally polarized emission with a narrow linewidth (∼0.2 nm) arises from the valence band splitting and birefringent nature of the semipolar GaN material, as well as the mode selection of the resonant cavity. By modulating the cavity length, the device is capable of switching between single- and multi-mode emission spectra. We believe that the approach of employing a cavity structure and semipolar GaN can be extended to produce orthogonally and linearly polarized blue, red, and violet light by adjusting the material compositions.

In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs). Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts. The threshold of polariton lasing is about half of the threshold of photonic lasing. Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate (BEC) in nitride semiconductors.

Polarized light has promising applications in biological inspections, displays, and precise measurements. Direct emission of polarized light from a semiconductor device is highly desired in order to reduce the size and energy-consumption of the whole system. In this study, we demonstrate a semipolar GaN-based microcavity light-emitting diode (MCLED) that could simultaneously produce green light with perpendicular and parallel polarizations to the c*-axis. Orthogonally polarized emission with a narrow linewidth (∼0.2 nm) arises from the valence band splitting and birefringent nature of the semipolar GaN material, as well as the mode selection of the resonant cavity. By modulating the cavity length, the device is capable of switching between single- and multi-mode emission spectra. We believe that the approach of employing a cavity structure and semipolar GaN can be extended to produce orthogonally and linearly polarized blue, red, and violet light by adjusting the material compositions. [ABSTRACT FROM AUTHOR]

Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed. [ABSTRACT FROM AUTHOR]

Based on the intramolecular energy transfer mechanism between organic ligand TMHD (2, 2, 6, 6-tetramethyl-3, 5-heptanedione) and central Er 3+ ions, optical gains at 1.55 µm were demonstrated in three structures of polymer waveguides using complex Er(TMHD) 3 -doped polymethylmethacrylate (PMMA) as the active material. With the excitation of two low-power UV light-emitting diodes (LEDs) instead of 980 or 1480 nm lasers, relative gains of 3.5 and 4.1 dB cm -1 were achieved in a 1-cm-long rectangular waveguide with an active core of Er(TMHD) 3 -doped PMMA polymer. Meanwhile, relative gain of 3.0 dB cm -1 was obtained in an evanescent-field waveguide with cross-section of 4 × 4 µm 2 using passive SU-8 polymer as core and a ∼1-µm-thick Er(TMHD) 3 -doped PMMA as upper cladding. By growing a 100 nm thick aluminum mirror and active lower cladding, the optical gain was doubled to 6.7 dB cm -1 in evanescent-field waveguides because of the stimulated excitation of Er 3+ ions in the upper and lower cladding and the improved absorption efficiency.

A 980 nm semiconductor laser is always selected as the pump source for erbium-ytterbium co-doped optical waveguide amplifiers. In this work, two low-cost blue-violet LEDs, rather than an expensive 980 nm laser, were used to pump an Er 3+ -Yb 3+ co-doped phosphate planar waveguide. When the signal power was 0.4 mW at a 1550 nm wavelength, internal optical gains of about 4.1 and 4.5 dB/cm were respectively obtained under the excitations of a 32 mW/cm 2 , 275 nm LED and a 914 mW/cm 2 , 405 nm LED. It was found that 51.17% of the total Er 3+ ions in the 2 H 9/2 state contributed to the luminescence at 1550 nm, and a theoretical model of gain simulation was established under the excitation of a 405 nm LED. The calculated gain of about 4.1 dB/cm was found to be in accordance with the experimental optical gain results.