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The energy gap of Bernal-stacked bilayer graphene can be tuned by applying a perpendicular electric field. The origin of this gap can be traced down to the breaking of its inversion symmetry by an onsite potential difference between the layers. This degree of tunability makes bilayer graphene a perfect playground for the study of the effects of electric fields, such as the crystalline field, which are developed when layers of other materials are deposited on top of it. Here, we introduce a novel device architecture allowing a simultaneous control over the applied displacement field and the crystalline alignment between two materials. Our experimental and numerical results confirm that the crystal field and electrostatic doping due to the interface reflect the 120$^{\circ}$ symmetry of the bilayer graphene/BN heterostructure and are highly affected by the commensurate state. These results provide an unique insight into the role of the twist angle in the development of internal crystal fields and intrinsic electrostatic doping in heterostructures. Our results highligth the importance of layer alignment, beyond the existence of a moir\'e superlattice, to understand and simulate the intrinsic properties of a van der Waal heterostructure.

The electron antinuetrino flux limits are presented for the brightest gamma-ray burst (GRB) of all time, GRB221009A, over a range of 1.8-200 MeV using the Kamioka Liquid Scintillator Anti Neutrino Detector (KamLAND). Using a variety of time windows to search for electron antineutrinos coincident with the GRB, we set an upper limit on the flux under the assumption of various neutrino source spectra. No excess was observed in any time windows ranging from seconds to days around the event trigger time. The limits are compared to the results presented by IceCube., Comment: 8 pages, 3 figures, 1 table

The charge neutrality point of bilayer graphene, denoted as {\nu} = 0 state, manifests competing phases marked by spontaneously broken isospin (spin/valley/layer) symmetries under external magnetic and electric fields. However, due to their electrically insulating nature, identifying these phases through electrical conductance measurements remains challenging. A recent theoretical proposal introduces a novel approach, employing thermal transport measurements to detect these competing phases. Here, we experimentally explore the bulk thermal transport of the {\nu} = 0 state in bilayer graphene to investigate its ground states and collective excitations associated with isospin. While the theory anticipates a finite thermal conductance in the {\nu} = 0 state, our findings unveil an absence of detectable thermal conductance. Through variations in the external electric field and temperature-dependent measurements, our results suggest towards gapped collective excitations at {\nu} = 0 state. Our findings underscore the necessity for further investigations into the nature of {\nu} = 0.

The jet cross-section and jet-substructure observables in $p$$+$$p$ collisions at $\sqrt{s}=200$ GeV were measured by the PHENIX Collaboration at the Relativistic Heavy Ion Collider (RHIC). Jets are reconstructed from charged-particle tracks and electromagnetic-calorimeter clusters using the anti-$k_{t}$ algorithm with a jet radius $R=0.3$ for jets with transverse momentum within $8.0

Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are attractive targets in this direction, anticipated to realize perfectly flat bands. Synthesizing these special structures, however, poses a formidable challenge, exemplified by the absence of solid-state materials realizing the dice and Lieb lattices. An alternative route leverages atomic orbitals to create the characteristic electron hopping of geometrically frustrated lattices. This strategy promises to expand the list of candidate materials to simpler structures, but is yet to be demonstrated experimentally. Here, we report the realization of frustrated hopping in the van der Waals (vdW) intermetallic Pd$_5$AlI$_2$, emerging from orbital decoration of a primitive square lattice. Using angle-resolved photoemission spectroscopy and quantum oscillations measurements, we demonstrate that the band structure of Pd$_5$AlI$_2$ includes linear Dirac-like bands intersected at their crossing point by a flat band, essential characteristics of frustrated hopping in the Lieb and dice lattices. Moreover, Pd$_5$AlI$_2$ is exceptionally stable, with the unusual bulk band structure and metallicity persisting in ambient conditions down to the monolayer limit. Our ability to realize an electronic structure characteristic of geometrically frustrated lattices establishes orbital decoration of primitive lattices as a new approach towards electronic structures that remain elusive to prevailing lattice-centric searches.

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 ${\mu}$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature., Comment: 22 pages, 18 figures

The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) excitons and the negative dark trion (T$^D$) differ substantially at a particular temperature. More importantly, they vanish considerably by about 3 -- 4 orders of magnitude with the temperature increased from 4.2 K to 100 K. The quenching of the dark-related emissions is accompanied by the two-order-of-magnitude increase in the emissions of their neutral bright counterparts, $i.e.$ neutral bright exciton (X$^B$) and spin-singlet (T$^S$) and spin-triplet (T$^T$) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X$^D$ and T$^D$ complexes and the corresponding bright X$^B$, T$^S$, and T$^T$ ones vary with temperature rises from 4.2 K to 100 K. This can be explained in terms of the different exciton-phonon couplings for the bright and dark excitons stemming from their distinct symmetry properties., Comment: Main text: 6 pages, 4 figures. Supplementary: 5 pages, 4 figures

Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy in the van der Waals regime. It constitutes the first step towards the development of large area single crystalline TMDs encapsulated in hBN for potential integration in electronic or opto-electronic devices. For this purpose, we define a two-step growth strategy to achieve monolayer-thick MoSe$_2$ grains on hBN flakes. The high quality of MoSe$_2$ allows us to detect very narrow PL linewidth down to 5.5 meV at 13 K, comparable to the one of encapsulated exfoliated MoSe$_2$ flakes. Moreover, sizeable PL can be detected at room temperature as well as clear reflectivity signatures of A, B and charged excitons., Comment: 6 pages, 6 figures

The PHENIX experiment measured the centrality dependence of two-pion Bose-Einstein correlation functions in $\sqrt{s_{_{NN}}}=200$~GeV Au$+$Au collisions at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The data are well represented by L\'evy-stable source distributions. The extracted source parameters are the correlation-strength parameter $\lambda$, the L\'evy index of stability $\alpha$, and the L\'evy-scale parameter $R$ as a function of transverse mass $m_T$ and centrality. The $\lambda(m_T)$ parameter is constant at larger values of $m_T$, but decreases as $m_T$ decreases. The L\'evy scale parameter $R(m_T)$ decreases with $m_T$ and exhibits proportionality to the length scale of the nuclear overlap region. The L\'evy exponent $\alpha(m_T)$ is independent of $m_T$ within uncertainties in each investigated centrality bin, but shows a clear centrality dependence. At all centralities, the L\'evy exponent $\alpha$ is significantly different from that of Gaussian ($\alpha=2$) or Cauchy ($\alpha=1$) source distributions. Comparisons to the predictions of Monte-Carlo simulations of resonance-decay chains show that in all but the most peripheral centrality class (50%-60%), the obtained results are inconsistent with the measurements, unless a significant reduction of the in-medium mass of the $\eta'$ meson is included. In each centrality class, the best value of the in-medium $\eta'$ mass is compared to the mass of the $\eta$ meson, as well as to several theoretical predictions that consider restoration of $U_A(1)$ symmetry in hot hadronic matter., Comment: 401 authors from 75 institutions, 20 pages, 15 figures, 2 tables. v1 is version submitted to Physical Review C. HEPdata tables for the points plotted in figures for this and previous PHENIX publications are (or will be) publicly available at http://www.phenix.bnl.gov/papers.html

In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $\tau_s\sim10~$ps, driven by the interplay between $\Gamma$-valley chiral phonons and spin-orbit mixing., Comment: 10 pages, 4 figures

We present a search for neutrinoless double-beta ($0\nu\beta\beta$) decay of $^{136}$Xe using the full KamLAND-Zen 800 dataset with 745 kg of enriched xenon, corresponding to an exposure of $2.097$ ton yr of $^{136}$Xe. This updated search benefits from a more than twofold increase in exposure, recovery of photo-sensor gain, and reduced background from muon-induced spallation of xenon. Combining with the search in the previous KamLAND-Zen phase, we obtain a lower limit for the $0\nu\beta\beta$ decay half-life of $T_{1/2}^{0\nu} > 3.8 \times 10^{26}$ yr at 90% C.L., a factor of 1.7 improvement over the previous limit. The corresponding upper limits on the effective Majorana neutrino mass are in the range 28-122 meV using phenomenological nuclear matrix element calculations., Comment: arXiv admin note: text overlap with arXiv:2203.02139

The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures., Comment: 13 pages, 4 figures

We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrodes and a crystalline hBN substrate. Through transport measurements performed in both the normal and superconducting states, we demonstrate that our method yields high-quality junctions with Josephson energies suitable for quantum device applications, such as carbon nanotube-based superconducting qubits.

Magic-angle twisted bilayer graphene (MATBG) stands as one of the most versatile materials in condensed-matter physics due to its hosting of a wide variety of exotic phases while also offering convenient tunability. However, the fabrication of MATBG is still manual, and remains to be a challenging and inefficient process, with devices being highly dependent on specific fabrication methods, that often result in inconsistency and variability. In this work, we present an optimized protocol for the fabrication of MATBG samples, for which we use deterministic graphene anchoring to stabilize the twist-angle, and a careful bubble removal techniques to ensure a high twist-angle homogeneity. We use low-temperature transport experiments to extract the average twist-angle between pairs of leads. We find that up to 38 percent of the so fabricated devices show micrometer square sized regions with a twist-angle in the range 1.1 plus/minus 0.1 degrees, and a twist-angle variation of only 0.02 degrees, where in some instances such regions were up to 36 micrometer square large. We are certain that the discussed protocols can be directly transferred to non-graphene materials, and will be useful for the growing field of moire materials.

Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moir\'e potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers., Comment: 7 pages, 3 figures

Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC, Ising (1.55 meV) and Rashba (2.5 meV), in bilayer graphene when interfaced with molybdenum disulphide, recognized as one of the most stable TMDs. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Remarkably, our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.

Recent experiments on magic-angle twisted bilayer graphene (MATBLG) indicate an unusual coexistence of heavy and light electrons, characteristic of Heavy-Fermion physics. Yet, these experiments lack direct evidence of the existence of local moments associated with the heavy electrons, a key component of Heavy-Fermion physics. Thermopower serves as a sensitive probe for measuring entropy and can, therefore, unveil the presence of local moments by assessing their impact on entropy. In this work, we have carried out comprehensive thermopower studies on MATBLG by varying temperatures ($T$) and magnetic fields ($B$). While the resistance exhibits prominent resistance peaks at integer fillings apart from the Dirac point (DP, $\nu = 0$) and full band filling ($\nu = \pm 4$), the thermopower remains featureless and symmetric to the DP with opposite signs, in complete violation of the Mott formula, even up to $\sim 100K$. This discrepancy indicates that resistance and thermopower are carried by different kinds of carriers. With the expected sign changes at the DP and full band filling, the thermopower demonstrates additional sign changes within the conduction and valence bands around $\nu \sim \pm 1$, persisting from $5K$ to $50K$. These observations cannot be explained solely by thermopower arising from an emergent Heavy-Fermion band picture, which is highly sensitive to temperature. Instead, our data is consistent with the dominant contribution coming from the entropy of the localized moments of heavy electrons. To validate the claim, we studied the thermopower with $B_{\parallel}$ and $B_{\perp}$, revealing a $30\%$ and $50\%$ reduction, respectively, and attributed to the partial polarization of the local moments (spin/valley), resulting in decreased entropy. Our results highlight the thermopower contribution from local moments and establish the Heavy-Fermion physics in MATBLG.

The superconducting (SC) state of magic-angle twisted bilayer graphene (MATBG) shows exceptional properties, as it consists of an unprecedentedly small electron (hole) ensemble of only ~ 10 power 11 carriers per square centimeter, which is five orders of magnitude lower than in traditional superconductors. This results in an ultra-low electronic heat capacity and kinetic inductance of this truly two-dimensional SC, and provides record-breaking key parameters for a variety of quantum sensing applications, in particular in thermal sensing and single photon detection (SPD), which traditionally exploit thermal effects in nanostructured superconducting thin films. In this work, we systematically study the interaction of the superconducting state of MATBG with individual light quanta. We discover full destruction of the SC state upon absorption of a single infrared photon even in a 16 square micrometer sized device, which showcases its exceptional bolometric sensitivity. Upon voltage biasing close to its critical current, we further show that this non-optimized device can be used as a SPD, whose click-rate is proportional to the number of absorbed photons, following Poissonian statistics. Our work offers insights into the MATBG-photon interaction and shows up pathways to use low-carrier density graphene-based superconductors as a new platform for developing revolutionary new quantum devices and sensors.

We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose direction reverses when the radiation helicity is switched. The circular ratchet effect is demonstrated for room temperature and a radiation frequency of 2.54 THz. It is shown that the ratchet current magnitude can be controllably tuned by the patterned and uniform back gate voltages. The results are analyzed in the light of the developed microscopic theory considering electronic and plasmonic mechanisms of the ratchet current formation., Comment: 10 pages, 8 figures, 2 tables

We use time-resolved nonlinear pump--probe measurements to reveal features of semiconductor moir\'e materials not accessible to linear spectroscopy. With an intense, red-detuned pump pulse, we generate a high density of virtual excitons or exciton--polarons in various moir\'e minibands. A broadband probe pulse in turn measures the response of all optical resonances induced by the pump-generated excitations. We generically observe a coherent blue shift originating from contact-like exciton--exciton interactions. At charge neutrality, these measurements allow us to assess the spatial overlap between different optical excitations and to observe signatures of a bound biexciton state between two different moir\'e exciton modes. In contrast to electron doped monolayers, spatially confined moir\'e attractive polarons behave as an ensemble of non-interacting two-level emitters, exhibiting an electron-density-independent ac-Stark effect. Tuning the pump laser into resonance with the attractive polaron, we demonstrate the filling of the moir\'e lattice with localized polarons and thereby realize a nonequilibrium Bose--Fermi mixture in moir\'e flat bands.

Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration., Comment: 24 pages, 14 figures

Superconductivity (SC) in twisted bilayer graphene (tBLG) has been explored by varying carrier concentrations, twist angles, and screening strength, with the aim of uncovering its origin and possible connections to strong electronic correlations in narrow bands and various resulting broken symmetries. However, the link between the tBLG band structure and the onset of SC and other orders largely remains unclear. In this study, we address this crucial gap by examining in-situ band structure tuning of a near magic-angle ($\theta \approx0.95^\circ$) tBLG device with displacement field ($D$) and reveal remarkable competition between SC and other broken symmetries. At zero $D$, the device exhibits superconducting signatures without the resistance peak at half-filling, a characteristic signature with a strong electronic correlation. As $D$ increases, the SC is suppressed, accompanied by the appearance of a resistance peak at half-filling. Hall density measurements reveal that at zero $D$, SC arises around the van Hove singularity (vHs) from an isospin or spin-valley unpolarized band. At higher $D$, the suppression of SC coincides with broken isospin symmetry near half-filling with lifted degeneracy ($g_d \sim 2$). Additionally, as the SC phase becomes weaker with $D$, vHs shifts to higher fillings, highlighting the modification of the underlying band structure with the applied electric field. These findings, with recent theoretical study on SC in tBLG, highlight the competition, rather being connected concomitantly, between SC and other orders promoted by broken symmetries.

We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the combined action of a spatially periodic in-plane electrostatic potential and a periodically modulated radiation electric field caused by near-field diffraction. The magnitude and direction of the ratchet current are shown to be controlled by voltages applied to both back and patterned gates, which change the lateral asymmetry, carrier type and density. The phenomenological and microscopic theories of ratchet effects in graphene-based 2D metamaterials are developed. The experimental data are discussed in the light of the theory based on the solution of the Boltzmann kinetic equation and the calculated electrostatic potential profile. The theory describes well all the experimental results and shows that the observed ratchet current consists of the Seebeck thermoratchet contribution as well as the linear contribution, which is sensitive to the orientation of the radiation electric field vector with respect to the triangles., Comment: 14 pages, 13 figures

This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields ($D$) and temperatures ($T$). Our measurements revealed that the non-local resistance ($R_{NL}$) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance ($R_{L}$) only when the $D$ exceeds a critical value of $\sim0.2$ V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold ($T<25$ K). Further, the value of $R_{NL}$ decreases in a linear fashion as the channel length ($L$) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied., Comment: Accepted in Physical Review Letters

We report on the mechanism of energy transfer in van der Waals heterostructures of the two-dimensional semiconductor WS$_2$ and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (hBN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 nm and 5.8 nm (0-16 hBN layers). We find that the energy transfer is dominated by states outside the light cone, indicative of a F\"orster transfer process, with an additional contribution from a Dexter process at 0.5 nm interlayer distance. We find that the measured dependence of the luminescence intensity on interlayer distances above 1 nm can be quantitatively described using recently reported values of the F\"orster transfer rates of thermalized charge carriers. At smaller interlayer distances, the experimentally observed transfer rates exceed the predictions and furthermore depend on excess energy as well as on excitation density. Since the transfer probability of the F\"orster mechanism depends on the momentum of electron-hole pairs, we conclude that at these distances, the transfer is driven by non-thermalized charge carrier distributions.

Quantum transport properties in molecularly thin perovskite/graphene heterostructure are experimentally investigated by Shubnikov-de Hass (SdH) oscillation and photo-resistance spectroscopy. We find an efficient charge transfer between the perovskite nanosheets and graphene, with a high hole concentration in graphene of up to $\rm \sim 2.8 \times 10^{13}\ cm^{-2}$. The perovskite layer also increases Fermi velocity lowering the effective mass of graphene from expected $\rm \sim 0.12\ m_e$ to $\rm \sim 0.08\ m_e$. Combining magneto-resistance and density functional theory calculations, we find that the carrier density in graphene significantly depends on the perovskite termination at the interface, affecting the charge transfer process and leading to a coexistence of regions with different doping. We also investigate the photo-response of the SdH oscillation under illumination. Using photo-resistance spectroscopy, we find evidence of photo-assisted transport across the perovskite layer between two graphene electrodes mediated by hot carriers in perovskite. Our results provide a picture to understand the transport behavior of 2D perovskite/graphene heterostructure and a reference for the controlled design of interfaces in perovskite optoelectronic devices.

The PHENIX experiment has performed a systematic study of identified charged-hadron ($\pi^\pm$, $K^\pm$, $p$, $\bar{p}$) production at midrapidity in $p$$+$Al, $^3$He$+$Au, Cu$+$Au collisions at $\sqrt{s_{_{NN}}}=200$ GeV and U$+$U collisions at $\sqrt{s_{_{NN}}}=193$ GeV. Identified charged-hadron invariant transverse-momentum ($p_T$) and transverse-mass ($m_T$) spectra are presented and interpreted in terms of radially expanding thermalized systems. The particle ratios of $K/\pi$ and $p/\pi$ have been measured in different centrality ranges of large (Cu$+$Au, U$+$U) and small ($p$$+$Al, $^3$He$+$Au) collision systems. The values of $K/\pi$ ratios measured in all considered collision systems were found to be consistent with those measured in $p$$+$$p$ collisions. However the values of $p/\pi$ ratios measured in large collision systems reach the values of $\approx0.6$, which is $\approx2$ times larger than in $p$$+$$p$ collisions. These results can be qualitatively understood in terms of the baryon enhancement expected from hadronization by recombination. Identified charged-hadron nuclear-modification factors ($R_{AB}$) are also presented. Enhancement of proton $R_{AB}$ values over meson $R_{AB}$ values was observed in central $^3$He$+$Au, Cu$+$Au, and U$+$U collisions. The proton $R_{AB}$ values measured in $p$$+$Al collision system were found to be consistent with $R_{AB}$ values of $\phi$, $\pi^\pm$, $K^\pm$, and $\pi^0$ mesons, which may indicate that the size of the system produced in $p$$+$Al collisions is too small for recombination to cause a noticeable increase in proton production., Comment: 480 authors from 78 institutions, 18 pages, 6 tables, 16 figures. v2 is version accepted for publication in Physical Review C. HEPdata tables for the points plotted in figures for this and previous PHENIX publications are (or will be) publicly available at http://www.phenix.bnl.gov/papers.html

We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable interest in the fractal quantum Hall regime. To cope with the challenge of deciphering the low magnetic field dynamics of moir minibands, we utilize a novel semi-classical calculation method, grounded in zero-field Fermi contours, to predict the nontrivial behavior of the Landau-level spectrum. This is compared with fully quantum simulations, enabling an in-depth and contrasted analysis of transport measurements in high-quality graphene-hBN superlattices. Our results not only highlight the primary observation of the open-orbit induced XMR in this system but also shed new light on other intricate phenomena. These include the nuances of single miniband dynamics, evident through Lifshitz transitions, and the complex interplay of semiclassical and quantum effects between these minibands. Specifically, we document transport anomalies linked to trigonal warping, a semiclassical deviation from the expected linear characteristics of Landau levels, and magnetic breakdown phenomena indicative of quantum tunneling, all effects jointly contributing to the intricacies of a rich electronic landscape uncovered at low magnetic fields., Comment: 5 figures

We perform infrared magneto-spectroscopy of Landau level (LL) transitions in dual-gated bilayer graphene. At $\nu=4$ when the zeroth LL (octet) is filled, two resonances are observed indicating the opening of a gap. At $\nu=0$ when the octet is half-filled, multiple resonances disperse non-monotonically with increasing displacement field, $D$, perpendicular to the sheet, showing a phase transition at modest displacement fields from a canted anti-ferromagnet (CAFM) to the layer-polarized state, with a gap that opens linearly in $D$. When $D=0$ and $\nu$ is varied, resonances at $\pm\nu$ show an electron-hole asymmetry with multiple line splittings as the octet is progressively filled. The $\nu=4$ data show good agreement with predictions from a mean-field Hartree-Fock calculation when accounting for multiple tight-binding terms in a four-band model of bilayer graphene. However even by incorporating a valley interaction anisotropy tuned to the CAFM ground state, only partial agreement is found at $\nu=0$. Our results suggest additional physics is required to understand bilayer graphene at half-filling.

Particle dark matter could belong to a multiplet that includes an electrically charged state. WIMP dark matter ($\chi^{0}$) accompanied by a negatively charged excited state ($\chi^{-}$) with a small mass difference (e.g. $<$ 20 MeV) can form a bound-state with a nucleus such as xenon. This bound-state formation is rare and the released energy is $\mathcal{O}(1-10$) MeV depending on the nucleus, making large liquid scintillator detectors suitable for detection. We searched for bound-state formation events with xenon in two experimental phases of the KamLAND-Zen experiment, a xenon-doped liquid scintillator detector. No statistically significant events were observed. For a benchmark parameter set of WIMP mass $m_{\chi^{0}} = 1$ TeV and mass difference $\Delta m = 17$ MeV, we set the most stringent upper limits on the recombination cross section times velocity $\langle\sigma v\rangle$ and the decay-width of $\chi^{-}$ to $9.2 \times 10^{-30}$ ${\rm cm^3/s}$ and $8.7 \times 10^{-14}$ GeV, respectively at 90% confidence level.

Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS., Comment: 9 pages, 4 figures

Collective spin-wave excitations-magnons-in a quantum Hall ferromagnet are promising quasi-particles for next-generation spintronics devices, including platforms for information transfer. Detection of these charge-neutral excitations relies on the conversion of magnons into electrical signals in the form of excess electrons and holes, but if these signals are equal the magnon detection remains elusive. In this work, we overcome this shortcoming by measuring the electrical noise generated by magnons. We use the symmetry-broken quantum Hall ferromagnet of the zeroth Landau level in graphene to launch magnons. Absorption of these magnons creates excess noise above the Zeeman energy and remains finite even when the average electrical signal is zero. Moreover, we formulate a theoretical model in which the noise is generated by equilibration (partial or full, depending on the bias voltage) between edge channels and propagating magnons. Our model, which agrees with experimental observations, also allows us to pinpoint the regime of ballistic magnon transport in our device.

Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR ({\lambda} = 6.5 {\mu}m) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process., Comment: 30 pages including Extended Data and Supplementary Material (Main text: 8 pages, 4 figures)

A van der Waals heterostructure containing an atomically thin monolayer transition-metal dichalcogenide as a single-photon emitting layer is emerging as an intriguing solid-state quantum-photonic platform. Here, we report the utilization of spin-coating of silica nanoparticles for deterministically creating the spectrally isolated, energetically stable, and narrow-linewidth single-photon emitters in ML-WS$_2$. We also demonstrate that long-duration low-temperature annealing of the photonic heterostructure in the vacuum removes the energetically unstable emitters that are present due to fabrication-associated residue and lead to the emission of single-photons in a <25 nm narrowband visible spectral range centered at $\sim$620 nm. This work may pave the way toward realizing a hybrid-quantum-photonic platform containing a van der Waals heterostructure/device and an atomic-vapor system emitting/absorbing in the same visible spectral range., Comment: 5 figures

We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers., Comment: 15 pages, 4 figures

Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we report magneto-photoluminescence (PL) investigations of monolayer (ML) MoSe$_2$ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe$_2$, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley $g$-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first principles calculations suggest that MoSe$_2$/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices., Comment: 14 pages, 4 figures

Two-dimensional (2D) van der Waals layered materials with intriguing properties are increasingly being adopted in hybrid photonics. The 2D materials are often integrated with photonic structures including cavities to enhance light-matter coupling, providing additional control and functionality. The 2D materials, however, needs to be precisely placed on the photonic cavities. Furthermore, the transfer of 2D materials onto the cavities could degrade the cavity quality $(Q)$ factor. Instead of using prefabricated PhC nanocavities, we demonstrate a novel approach to form a hybrid nanocavity by partially covering a PhC waveguide post-fabrication with a suitably-sized 2D material flake. We successfully fabricated such hybrid nanocavity devices with hBN, WSe$_2$ and MoTe$_2$ flakes on silicon PhC waveguides, obtaining $Q$ factors as high as $4.0\times10^5$. Remarkably, even mono- and few-layer flakes can provide sufficient local refractive index modulation to induce nanocavity formation. Since the 2D material is spatially self-aligned to the nanocavity, we have also managed to observe cavity PL enhancement in a MoTe$_2$ hybrid cavity device, with a cavity Purcell enhancement factor of about 15. Our results highlights the prospect of using such 2D materials-induced PhC nanocavity to realize a wide range of photonic components for hybrid devices and integrated photonic circuits., Comment: 9 pages, 4 figures

Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, $i.e.$ in-plane E$'$ and out-of-plane A$'_1$, but the appearance of 1$^{st}$, 2$^{nd}$, and higher-order phonon modes is recognised. The intensity profiles of the A$'_1$ modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe$_2$ ML, the A$'_1$ mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, $i.e.$ bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs., Comment: 9 pages, 6 figures, ESI

The low-temperature phase diagram of a Bosonic system is predicted to contain an exotic quantum phase, called a supersolid, that is defined by broken translational symmetry and off-diagonal long-range order. This unique combination of properties enables a seemingly paradoxical scenario where a bosonic solid exhibits dissipationless mass flow. However, despite decades of extensive efforts, experimental realization of such a supersolid phase remains elusive. In this work we report experimental observation of a superfluid-to-insulating transition in the bosonic system of spatially indirect excitons in double layer graphene. Utilizing a variety of transport methods to characterize the superfluid-insulator phase boundary as a function of both density and temperature suggests the insulator to be a solid phase driven by repulsive dipole-dipole interactions in the dilute limit. The exciton solid exhibits a unique melting transition, with the high-temperature phase recovering a hallmark transport signature of off-diagonal long-range order, perfect Coulomb drag. The reentrant superfluid-like behaviour could indicate the low temperature solid also corresponds to a quantum coherent phase.

Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct far-field electroluminescence from hBN-encapsulated graphene in the mid-infrared under large bias in ambient conditions. Through a series of test experiments ruling out its incandescence origin, we determine that the electroluminescent signal results from the electrical pumping produced by interband tunneling. We show that the mid-infrared electroluminescence is spectrally shaped by a natural quarter-wave resonance of the heterostructure. This work invites a reassessment of the use of metals and semi-metals as non-equilibrium light emitters, and the exploration of their intriguing specificities in terms of carrier injection and relaxation, as well as emission tunability and switching speed., Comment: Main text (8 pages , 3 figures ) + Supplementary Information ( 19 pages , 19 figures)

Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known examples such as nitrogen-vacancy centers in diamond, silicon-vacancy in silicon carbide, chromium substitutions in aluminium oxide, and many others. Unfortunately, such defect centers embedded in highly insulating crystals have been notoriously difficult to excite electrically. Herewith, we present a realisation of insulating light-emitting diodes based on carbon centers in hexagonal boron nitride. The rational design of the vertical tunnelling devices via van der Waals technology enabled us to control the charge dynamics related to non-radiative tunelling, defect-to-band electroluminescence, and intradefect electroluminescence. The fundamental understanding of the tunnelling events enabled us to achieve high efficiency of electrical excitation, which exceeded by a few orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. A combination of a Stark effect and screening by band electrons provide a control knob for tuning the energy of emission. With this work, we solve an outstanding problem of creating electrically driven devices realised with defect centers in wide-band-gap crystals, which are relevant in the domain of optoelectronics, telecommunication, computation, or sensing.

Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2D crystal shifts the Fermi level closer to the valence band while the effect can be only partially reversible via continuous wave laser rastering process. The presence of chlorine species in the lattice is validated by X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations predict that adsorption of chlorine on the selenium vacancy sites leads to p-type doping. The results of our study indicate that photochemical techniques have the potential to enhance the performance of various 2D materials, making them suitable for potential applications in optoelectronics., Comment: 15 pages, 13 figures

Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper we study various techniques, focused ion beam (FIB), electron irradiation and ion implantation, for the preparation of hBN flakes from bulk crystals, and relevant post-processing treatments to create VB${^-}$s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimising implantation parameters, while careful sample cleaning proved important to achieve best results.

Employing the original, all-optical method, we quantify the magnetic susceptibility of a two-dimensional electron gas (2DEG) confined in the MoSe$_2$ monolayer in the range of low and moderate carrier densities. The impact of electron-electron interactions on the 2DEG magnetic susceptibility is found to be particularly strong in the limit of, studied in detail, low carrier densities. Following the existing models, we derive the value of $g_0 = 2.5 \pm 0.4$ for the bare (in the absence of the interaction effects) $g$-factor of the ground state electronic band in the MoSe$_2$ monolayer. The derived value of this parameter is discussed in the context of estimations from other experimental approaches. Surprisingly, the conclusions drawn differ from theoretical ab-initio studies.

Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs