1. MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structure
- Author
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Sami Suihkonen, Andreas N. Danilewsky, Glenn Ross, Aapo Lankinen, Markku Tilli, Turkka O. Tuomi, Ville Luntinen, Mervi Paulasto-Kröckel, Mikael Broas, Electronics Integration and Reliability, Department of Electrical Engineering and Automation, Markku Sopanen Group, Department of Electronics and Nanoengineering, Aalto-yliopisto, Albert-Ludwigs-Universität Freiburg, Okmetic Oyj, and Aalto University
- Subjects
Dielectric ,Materials science ,Silicon on insulator ,Insulator (electricity) ,02 engineering and technology ,Direct bonding ,Tensile tests ,01 natural sciences ,Metalorganic chemical vapor deposition ,Plasma-enhanced chemical vapor deposition ,0103 physical sciences ,Diffraction topography ,Wafer ,Metalorganic vapour phase epitaxy ,Silicon-on-insulator ,Aluminum nitride ,010302 applied physics ,business.industry ,Aluminum gallium nitride ,021001 nanoscience & nanotechnology ,Optoelectronics ,Synchrotron x-ray diffraction topography ,0210 nano-technology ,business ,Transmission electron microscopy - Abstract
Due to the functional limitations of SiO2 for SOI applications, alternative dielectric materials have been investigated. Alternative SOI materials in this work include, AlN and AlGaN. The dielectrics were deposited using MOCVD, and with the aid of PECVD deposited SiO2, and the SiO2 was directly bonded to a handle Si wafer. Tensile tests were performed on the samples to examine the fracture behavior and maximum tensile stresses, with results being comparable to a traditional SOI. Characterization was undertaken using TEM to understand the microstructural and interfacial properties of alternative SOI. High crystal quality Al(Ga)N was achieved on a Si(111) substrate that generally contained well defined chemical interfaces. Finally, synchrotron X-ray diffraction topography was used to understand the topographical strain profile of the device and handle wafers. Topography results showed different strain network properties between the device and handle wafer. This work has demonstrated preliminary feasibility of using alternative dielectrics for SOI applications.
- Published
- 2020