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We have examined the reliability risks of complementary SiGe HBTs on thick-film silicon on insulator (SOI). DC stress techniques, such as reverse emitter–base (EB) stress, mixed-mode stress, and flyback measurements, were used to characterize the safe operating area of n-p-n and p-n-p SiGe HBTs fabricated on SOI substrates. The measurements were analyzed based on fundamental damage mechanisms, such as hot carriers generated at the EB and collector–base junctions during large reverse voltage, and thermal runaway as a result of high current phenomena. RF stress (using a large amplitude continuous-wave signal) was also performed to examine the reliability of complementary bipolar complementary metal–oxide–semiconductor devices and circuits in an RF context. In both cases, p-n-p SiGe HBTs were found to be more reliable than n-p-n SiGe HBTs, a fact that may offer opportunities for circuit design optimization. [ABSTRACT FROM PUBLISHER]