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Your search keyword '"Rooyackers, R."' showing total 8 results
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8 results on '"Rooyackers, R."'

3. The impact of the temperature on In0.53Ga0.47As nTFETs

Author

Bordallo, C., primary, Martino, J. A., additional, Agopian, P. G. D., additional, Alian, A., additional, Mols, Y., additional, Rooyackers, R., additional, Vandooren, A., additional, Verhulst, A., additional, Mocuta, D., additional, Lin, D., additional, Simoen, E., additional, Claeys, C., additional, and Collaert, N., additional

Published
2018
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4. Fabrication and Analysis of a Si/Si0.55Ge0.45 Heterojunction Line Tunnel FET

Author

WALKE, AM, VANDOOREN, A, ROOYACKERS, R, LEONELLI, D, HIKAVYY, A, LOO, R, VERHULST, AS, KAO, KH, HUYGHEBAERT, C, GROESENEKEN, G, RAO, VR, BHUWALKA, KK, HEYNS, MM, COLLAERT, N, and THEAN, AVY

Subjects
Line Tunneling, Gate Length And Width Dependence, Tfet Variability, Performance, Tfet Simulations, Field-Induced Quantum Confinement (Fiqc), Fiqc Effect, Tfet Fabrication, Tunnel Field Effect Transistor (Tfet), Strain
Abstract

This paper presents a new integration scheme to fabricate a Si/Si0.55Ge0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. The 1-mu m gate length device shows ON current in excess of 20 mu A/mu m at V-GS = V-DS = 1.2 V. Low-temperature measurements, performed to suppress trap-assisted tunneling (TAT), reveal the point subthreshold swing as low as 22 mV/dec at 78 K. Field-induced quantum confinement effects are found to increase the tunneling onset voltage by similar to 0.35 V. Variation of the tunneling onset voltage measured experimentally is correlated to variation in the pocket thickness and its doping concentration. Small geometry devices were found to be more susceptible to microvariations in the pocket thickness and doping concentration.

Published
2014
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